SE0500743L - Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbid - Google Patents
Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbidInfo
- Publication number
- SE0500743L SE0500743L SE0500743A SE0500743A SE0500743L SE 0500743 L SE0500743 L SE 0500743L SE 0500743 A SE0500743 A SE 0500743A SE 0500743 A SE0500743 A SE 0500743A SE 0500743 L SE0500743 L SE 0500743L
- Authority
- SE
- Sweden
- Prior art keywords
- channel
- manufacturing
- silicon carbide
- semiconductor device
- semiconductor substrates
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
- H01L29/8083—Vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004118890 | 2004-04-14 | ||
| JP2004193460A JP4487656B2 (ja) | 2004-04-14 | 2004-06-30 | 半導体装置の製造方法 |
| JP2004193459A JP4487655B2 (ja) | 2004-04-14 | 2004-06-30 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| SE0500743L true SE0500743L (sv) | 2005-10-15 |
| SE527205C2 SE527205C2 (sv) | 2006-01-17 |
Family
ID=35070673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0500743A SE527205C2 (sv) | 2004-04-14 | 2005-04-05 | Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbid |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7241694B2 (sv) |
| DE (1) | DE102005017288B8 (sv) |
| SE (1) | SE527205C2 (sv) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7820511B2 (en) * | 2004-07-08 | 2010-10-26 | Semisouth Laboratories, Inc. | Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making |
| KR100594327B1 (ko) * | 2005-03-24 | 2006-06-30 | 삼성전자주식회사 | 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 |
| US7314799B2 (en) | 2005-12-05 | 2008-01-01 | Semisouth Laboratories, Inc. | Self-aligned trench field effect transistors with regrown gates and bipolar junction transistors with regrown base contact regions and methods of making |
| EP2264741B1 (en) * | 2006-01-10 | 2021-03-10 | Cree, Inc. | Silicon carbide dimpled substrate |
| WO2007116420A1 (en) * | 2006-04-11 | 2007-10-18 | Stmicroelectronics S.R.L. | Process for manufacturing a semiconductor power device and respective device |
| US7682977B2 (en) * | 2006-05-11 | 2010-03-23 | Micron Technology, Inc. | Methods of forming trench isolation and methods of forming arrays of FLASH memory cells |
| JP4046140B1 (ja) * | 2006-11-29 | 2008-02-13 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP5509520B2 (ja) * | 2006-12-21 | 2014-06-04 | 富士電機株式会社 | 炭化珪素半導体装置の製造方法 |
| EP2133906A4 (en) * | 2007-04-05 | 2011-11-02 | Sumitomo Electric Industries | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| JP4483900B2 (ja) * | 2007-06-21 | 2010-06-16 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| US7989882B2 (en) * | 2007-12-07 | 2011-08-02 | Cree, Inc. | Transistor with A-face conductive channel and trench protecting well region |
| EP2091083A3 (en) * | 2008-02-13 | 2009-10-14 | Denso Corporation | Silicon carbide semiconductor device including a deep layer |
| JP5556053B2 (ja) * | 2009-04-27 | 2014-07-23 | 富士電機株式会社 | 炭化珪素半導体素子の製造方法 |
| AU2010262789A1 (en) * | 2009-06-19 | 2012-02-02 | Power Integrations, Inc. | Methods of making vertical junction field effect transistors and bipolar junction transistors without ion implantation and devices made therewith |
| JP2011119512A (ja) * | 2009-12-04 | 2011-06-16 | Denso Corp | 半導体装置およびその製造方法 |
| JP5170074B2 (ja) * | 2009-12-25 | 2013-03-27 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
| JP5310687B2 (ja) * | 2010-09-30 | 2013-10-09 | 株式会社デンソー | 接合型電界効果トランジスタを備えた半導体装置およびその製造方法 |
| US8536674B2 (en) | 2010-12-20 | 2013-09-17 | General Electric Company | Integrated circuit and method of fabricating same |
| JP5510309B2 (ja) * | 2010-12-22 | 2014-06-04 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5668576B2 (ja) * | 2011-04-01 | 2015-02-12 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
| JP5729331B2 (ja) | 2011-04-12 | 2015-06-03 | 株式会社デンソー | 半導体装置の製造方法及び半導体装置 |
| JP5582112B2 (ja) * | 2011-08-24 | 2014-09-03 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5209152B1 (ja) | 2011-09-22 | 2013-06-12 | パナソニック株式会社 | 炭化珪素半導体素子およびその製造方法 |
| JP5692145B2 (ja) | 2012-04-17 | 2015-04-01 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP5884617B2 (ja) * | 2012-04-19 | 2016-03-15 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP5920010B2 (ja) | 2012-05-18 | 2016-05-18 | 住友電気工業株式会社 | 半導体装置 |
| JP6064366B2 (ja) | 2012-05-18 | 2017-01-25 | 住友電気工業株式会社 | 半導体装置 |
| JP5724945B2 (ja) | 2012-05-18 | 2015-05-27 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| JP5751213B2 (ja) * | 2012-06-14 | 2015-07-22 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP6299102B2 (ja) | 2012-08-07 | 2018-03-28 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| DE112014000679B4 (de) * | 2013-02-05 | 2019-01-17 | Mitsubishi Electric Corporation | Isolierschichtsiliciumcarbidhalbleiterbauteil und Verfahren zu dessen Herstellung |
| JP6178106B2 (ja) * | 2013-04-25 | 2017-08-09 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| JP5649152B1 (ja) * | 2013-04-30 | 2015-01-07 | パナソニック株式会社 | 半導体装置及びその製造方法 |
| US9887283B2 (en) * | 2013-05-10 | 2018-02-06 | Alpha And Omega Semiconductor Incorporated | Process method and structure for high voltage MOSFETs |
| JP6107453B2 (ja) * | 2013-06-13 | 2017-04-05 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
| WO2016038833A1 (ja) | 2014-09-08 | 2016-03-17 | パナソニックＩｐマネジメント株式会社 | 半導体装置及びその製造方法 |
| CN104599952A (zh) * | 2015-01-22 | 2015-05-06 | 中国科学院半导体研究所 | 一种去除碳化硅等离子体刻蚀形成的刻蚀损伤层的方法 |
| JP6613610B2 (ja) * | 2015-05-14 | 2019-12-04 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP6409681B2 (ja) | 2015-05-29 | 2018-10-24 | 株式会社デンソー | 半導体装置およびその製造方法 |
| JP6485382B2 (ja) * | 2016-02-23 | 2019-03-20 | 株式会社デンソー | 化合物半導体装置の製造方法および化合物半導体装置 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3603725C2 (de) * | 1986-02-06 | 1994-08-18 | Siemens Ag | Verfahren zur Strukturierung von Siliciumcarbid |
| US5436174A (en) * | 1993-01-25 | 1995-07-25 | North Carolina State University | Method of forming trenches in monocrystalline silicon carbide |
| US5270244A (en) * | 1993-01-25 | 1993-12-14 | North Carolina State University At Raleigh | Method for forming an oxide-filled trench in silicon carbide |
| US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
| DE69534888T2 (de) * | 1994-04-06 | 2006-11-02 | Denso Corp., Kariya | Herstellungsverfahren für Halbleiterbauelement mit Graben |
| US6133587A (en) | 1996-01-23 | 2000-10-17 | Denso Corporation | Silicon carbide semiconductor device and process for manufacturing same |
| JP3471509B2 (ja) | 1996-01-23 | 2003-12-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| US5742076A (en) * | 1996-06-05 | 1998-04-21 | North Carolina State University | Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance |
| US5753938A (en) * | 1996-08-08 | 1998-05-19 | North Carolina State University | Static-induction transistors having heterojunction gates and methods of forming same |
| US6100132A (en) | 1997-06-30 | 2000-08-08 | Kabushiki Kaisha Toshiba | Method of deforming a trench by a thermal treatment |
| US6362495B1 (en) * | 1998-03-05 | 2002-03-26 | Purdue Research Foundation | Dual-metal-trench silicon carbide Schottky pinch rectifier |
| US6228720B1 (en) * | 1999-02-23 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Method for making insulated-gate semiconductor element |
| US6475889B1 (en) * | 2000-04-11 | 2002-11-05 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
| US7125786B2 (en) * | 2000-04-11 | 2006-10-24 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
| US6406982B2 (en) | 2000-06-05 | 2002-06-18 | Denso Corporation | Method of improving epitaxially-filled trench by smoothing trench prior to filling |
| JP3534056B2 (ja) * | 2000-08-31 | 2004-06-07 | 日産自動車株式会社 | 炭化珪素半導体装置の製造方法 |
| US6670278B2 (en) * | 2001-03-30 | 2003-12-30 | Lam Research Corporation | Method of plasma etching of silicon carbide |
| JP3932842B2 (ja) | 2001-08-29 | 2007-06-20 | 株式会社デンソー | 炭化珪素半導体装置及びその製造方法 |
| JP3918565B2 (ja) * | 2002-01-21 | 2007-05-23 | 株式会社デンソー | 半導体装置の製造方法 |
| JP4011347B2 (ja) | 2002-01-23 | 2007-11-21 | 日本碍子株式会社 | 電極装置 |
| JP4110875B2 (ja) * | 2002-08-09 | 2008-07-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| JP4899405B2 (ja) * | 2004-11-08 | 2012-03-21 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP2006351744A (ja) * | 2005-06-15 | 2006-12-28 | Fuji Electric Holdings Co Ltd | 炭化珪素半導体装置の製造方法 |
| JP2007036052A (ja) * | 2005-07-28 | 2007-02-08 | Toshiba Corp | 半導体整流素子 |
-
2005
- 2005-04-05 SE SE0500743A patent/SE527205C2/sv not_active IP Right Cessation
- 2005-04-14 DE DE102005017288A patent/DE102005017288B8/de not_active Expired - Fee Related
- 2005-04-14 US US11/105,587 patent/US7241694B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7241694B2 (en) | 2007-07-10 |
| SE527205C2 (sv) | 2006-01-17 |
| US20050233539A1 (en) | 2005-10-20 |
| DE102005017288B4 (de) | 2012-11-22 |
| DE102005017288B8 (de) | 2013-01-31 |
| DE102005017288A1 (de) | 2005-11-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |