PT92740A - Protese de joelho modular - Google Patents

Protese de joelho modular

Info

Publication number
PT92740A
PT92740A PT92740A PT9274089A PT92740A PT 92740 A PT92740 A PT 92740A PT 92740 A PT92740 A PT 92740A PT 9274089 A PT9274089 A PT 9274089A PT 92740 A PT92740 A PT 92740A
Authority
PT
Portugal
Prior art keywords
protesis
modular knee
knee
modular
knee protesis
Prior art date
Application number
PT92740A
Other languages
English (en)
Other versions
PT92740B (pt
Inventor
John Edward Slamin
Original Assignee
Johnson & Johnson Orthopaedics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johnson & Johnson Orthopaedics filed Critical Johnson & Johnson Orthopaedics
Publication of PT92740A publication Critical patent/PT92740A/pt
Publication of PT92740B publication Critical patent/PT92740B/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/126—Power FETs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Prostheses (AREA)
PT92740A 1988-12-27 1989-12-27 Protese de joelho modular PT92740B (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/290,546 US5072266A (en) 1988-12-27 1988-12-27 Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry

Publications (2)

Publication Number Publication Date
PT92740A true PT92740A (pt) 1990-06-29
PT92740B PT92740B (pt) 1995-12-29

Family

ID=23116502

Family Applications (1)

Application Number Title Priority Date Filing Date
PT92740A PT92740B (pt) 1988-12-27 1989-12-27 Protese de joelho modular

Country Status (2)

Country Link
US (3) US5072266A (pt)
PT (1) PT92740B (pt)

Families Citing this family (238)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5283201A (en) * 1988-05-17 1994-02-01 Advanced Power Technology, Inc. High density power device fabrication process
US5404040A (en) * 1990-12-21 1995-04-04 Siliconix Incorporated Structure and fabrication of power MOSFETs, including termination structures
US5304831A (en) * 1990-12-21 1994-04-19 Siliconix Incorporated Low on-resistance power MOS technology
US5168331A (en) * 1991-01-31 1992-12-01 Siliconix Incorporated Power metal-oxide-semiconductor field effect transistor
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
JP2837033B2 (ja) * 1992-07-21 1998-12-14 三菱電機株式会社 半導体装置及びその製造方法
US5430324A (en) * 1992-07-23 1995-07-04 Siliconix, Incorporated High voltage transistor having edge termination utilizing trench technology
GB9215653D0 (en) * 1992-07-23 1992-09-09 Philips Electronics Uk Ltd A method of manufacturing a semiconductor device comprising an insulated gate field effect device
US5558313A (en) * 1992-07-24 1996-09-24 Siliconix Inorporated Trench field effect transistor with reduced punch-through susceptibility and low RDSon
US5910669A (en) * 1992-07-24 1999-06-08 Siliconix Incorporated Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof
GB9216599D0 (en) * 1992-08-05 1992-09-16 Philips Electronics Uk Ltd A semiconductor device comprising a vertical insulated gate field effect device and a method of manufacturing such a device
GB9216953D0 (en) * 1992-08-11 1992-09-23 Philips Electronics Uk Ltd A semiconductor component
JP3167457B2 (ja) * 1992-10-22 2001-05-21 株式会社東芝 半導体装置
DE4300806C1 (de) * 1993-01-14 1993-12-23 Siemens Ag Verfahren zur Herstellung von vertikalen MOS-Transistoren
US5341011A (en) * 1993-03-15 1994-08-23 Siliconix Incorporated Short channel trenched DMOS transistor
US5410170A (en) * 1993-04-14 1995-04-25 Siliconix Incorporated DMOS power transistors with reduced number of contacts using integrated body-source connections
US5349224A (en) * 1993-06-30 1994-09-20 Purdue Research Foundation Integrable MOS and IGBT devices having trench gate structure
JP3396553B2 (ja) 1994-02-04 2003-04-14 三菱電機株式会社 半導体装置の製造方法及び半導体装置
JPH07235672A (ja) * 1994-02-21 1995-09-05 Mitsubishi Electric Corp 絶縁ゲート型半導体装置およびその製造方法
DE69534888T2 (de) * 1994-04-06 2006-11-02 Denso Corp., Kariya Herstellungsverfahren für Halbleiterbauelement mit Graben
US5468982A (en) * 1994-06-03 1995-11-21 Siliconix Incorporated Trenched DMOS transistor with channel block at cell trench corners
US5486772A (en) 1994-06-30 1996-01-23 Siliconix Incorporation Reliability test method for semiconductor trench devices
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
EP0698919B1 (en) * 1994-08-15 2002-01-16 Siliconix Incorporated Trenched DMOS transistor fabrication using seven masks
JP3307785B2 (ja) 1994-12-13 2002-07-24 三菱電機株式会社 絶縁ゲート型半導体装置
US5597765A (en) * 1995-01-10 1997-01-28 Siliconix Incorporated Method for making termination structure for power MOSFET
US6005264A (en) * 1995-03-01 1999-12-21 Lsi Logic Corporation Microelectronic integrated circuit including hexagonal CMOS "NAND" gate device
US5528033A (en) * 1995-03-29 1996-06-18 International Business Machines Corporation Automatic surface profiling for submicron device
US5592005A (en) * 1995-03-31 1997-01-07 Siliconix Incorporated Punch-through field effect transistor
US5998837A (en) * 1995-06-02 1999-12-07 Siliconix Incorporated Trench-gated power MOSFET with protective diode having adjustable breakdown voltage
JP2988871B2 (ja) * 1995-06-02 1999-12-13 シリコニックス・インコーポレイテッド トレンチゲートパワーｍｏｓｆｅｔ
US6140678A (en) * 1995-06-02 2000-10-31 Siliconix Incorporated Trench-gated power MOSFET with protective diode
US6049108A (en) * 1995-06-02 2000-04-11 Siliconix Incorporated Trench-gated MOSFET with bidirectional voltage clamping
EP0746042B1 (en) * 1995-06-02 2004-03-31 SILICONIX Incorporated Bidirectional blocking trench power MOSFET
US5641974A (en) * 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
US5629543A (en) * 1995-08-21 1997-05-13 Siliconix Incorporated Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
US6107661A (en) * 1995-09-29 2000-08-22 Nippondenso Co., Ltd. Semiconductor device and method of manufacturing same
FR2739493B1 (fr) * 1995-09-29 2000-07-28 Nippon Denso Co Mosfet de puissance et son procede de fabrication
EP0864178A4 (en) * 1995-10-02 2001-10-10 Siliconix Inc SLIDED GRID MOSFET HAVING AN INTEGRATED TEMPERATURE SENSING DIODE
US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US5668026A (en) * 1996-03-06 1997-09-16 Megamos Corporation DMOS fabrication process implemented with reduced number of masks
US5821583A (en) * 1996-03-06 1998-10-13 Siliconix Incorporated Trenched DMOS transistor with lightly doped tub
US6040599A (en) * 1996-03-12 2000-03-21 Mitsubishi Denki Kabushiki Kaisha Insulated trench semiconductor device with particular layer structure
JP3410286B2 (ja) * 1996-04-01 2003-05-26 三菱電機株式会社 絶縁ゲート型半導体装置
US6236099B1 (en) * 1996-04-22 2001-05-22 International Rectifier Corp. Trench MOS device and process for radhard device
US5877529A (en) * 1996-04-26 1999-03-02 Megamos Corporation Mosfet termination design and core cell configuration to increase breakdown voltage and to improve device ruggedness
US5904525A (en) * 1996-05-08 1999-05-18 Siliconix Incorporated Fabrication of high-density trench DMOS using sidewall spacers
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
US5719409A (en) * 1996-06-06 1998-02-17 Cree Research, Inc. Silicon carbide metal-insulator semiconductor field effect transistor
US5838050A (en) * 1996-06-19 1998-11-17 Winbond Electronics Corp. Hexagon CMOS device
DE69739206D1 (de) * 1996-07-19 2009-02-26 Siliconix Inc Hochdichte-graben-dmos-transistor mit grabenbodemimplantierung
US5879968A (en) 1996-11-18 1999-03-09 International Rectifier Corporation Process for manufacture of a P-channel MOS gated device with base implant through the contact window
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US6239463B1 (en) 1997-08-28 2001-05-29 Siliconix Incorporated Low resistance power MOSFET or other device containing silicon-germanium layer
DE19738324C1 (de) * 1997-09-02 1998-09-03 Siemens Ag DMOS mit großer Kanalweite und hoher Avalanche-Festigkeit
US5923979A (en) * 1997-09-03 1999-07-13 Siliconix Incorporated Planar DMOS transistor fabricated by a three mask process
JP3329707B2 (ja) * 1997-09-30 2002-09-30 株式会社東芝 半導体装置
US6031265A (en) * 1997-10-16 2000-02-29 Magepower Semiconductor Corp. Enhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination area
US6103635A (en) * 1997-10-28 2000-08-15 Fairchild Semiconductor Corp. Trench forming process and integrated circuit device including a trench
US6429481B1 (en) 1997-11-14 2002-08-06 Fairchild Semiconductor Corporation Field effect transistor and method of its manufacture
US6033997A (en) * 1997-12-29 2000-03-07 Siemens Aktiengesellschaft Reduction of black silicon in semiconductor fabrication
US6396102B1 (en) * 1998-01-27 2002-05-28 Fairchild Semiconductor Corporation Field coupled power MOSFET bus architecture using trench technology
US6362495B1 (en) 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
US6171969B1 (en) * 1998-03-13 2001-01-09 Texas Instruments Incorporated Uniform dopant distribution for mesas of semiconductors
JP3413569B2 (ja) 1998-09-16 2003-06-03 株式会社日立製作所 絶縁ゲート型半導体装置およびその製造方法
US5998833A (en) 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6621121B2 (en) * 1998-10-26 2003-09-16 Silicon Semiconductor Corporation Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
US6351009B1 (en) * 1999-03-01 2002-02-26 Fairchild Semiconductor Corporation MOS-gated device having a buried gate and process for forming same
JP2000269486A (ja) * 1999-03-15 2000-09-29 Toshiba Corp 半導体装置
US7084456B2 (en) * 1999-05-25 2006-08-01 Advanced Analogic Technologies, Inc. Trench MOSFET with recessed clamping diode using graded doping
EP1190447B1 (de) 1999-06-25 2009-09-16 Infineon Technologies AG Trench-mos-transistor
JP4244456B2 (ja) * 1999-08-04 2009-03-25 株式会社デンソー 半導体装置の製造方法、絶縁ゲート型バイポーラトランジスタの製造方法及び絶縁ゲート型バイポーラトランジスタ
KR100334577B1 (ko) * 1999-08-06 2002-05-03 윤종용 사진공정의 해상도를 능가하는 트렌치를 절연막내에 형성하는방법
US6518621B1 (en) * 1999-09-14 2003-02-11 General Semiconductor, Inc. Trench DMOS transistor having reduced punch-through
US6348712B1 (en) * 1999-10-27 2002-02-19 Siliconix Incorporated High density trench-gated power MOSFET
US6461918B1 (en) 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
US6285060B1 (en) 1999-12-30 2001-09-04 Siliconix Incorporated Barrier accumulation-mode MOSFET
US6548860B1 (en) 2000-02-29 2003-04-15 General Semiconductor, Inc. DMOS transistor structure having improved performance
US6312993B1 (en) * 2000-02-29 2001-11-06 General Semiconductor, Inc. High speed trench DMOS
US6812526B2 (en) 2000-03-01 2004-11-02 General Semiconductor, Inc. Trench DMOS transistor structure having a low resistance path to a drain contact located on an upper surface
US6642577B2 (en) * 2000-03-16 2003-11-04 Denso Corporation Semiconductor device including power MOSFET and peripheral device and method for manufacturing the same
CN1428007A (zh) * 2000-03-17 2003-07-02 通用半导体公司 具有双栅极结构的沟槽型双扩散金属氧化物半导体晶体管
US6376315B1 (en) * 2000-03-31 2002-04-23 General Semiconductor, Inc. Method of forming a trench DMOS having reduced threshold voltage
KR100327323B1 (ko) * 2000-05-30 2002-03-06 김덕중 래치 업이 억제된 트랜치 게이트 구조의 전력용반도체소자 및 그 제조방법
JP4696335B2 (ja) * 2000-05-30 2011-06-08 株式会社デンソー 半導体装置およびその製造方法
TW523816B (en) 2000-06-16 2003-03-11 Gen Semiconductor Inc Semiconductor trench device with enhanced gate oxide integrity structure
US6472678B1 (en) 2000-06-16 2002-10-29 General Semiconductor, Inc. Trench MOSFET with double-diffused body profile
US6555895B1 (en) 2000-07-17 2003-04-29 General Semiconductor, Inc. Devices and methods for addressing optical edge effects in connection with etched trenches
US7745289B2 (en) 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6472708B1 (en) * 2000-08-31 2002-10-29 General Semiconductor, Inc. Trench MOSFET with structure having low gate charge
US6445037B1 (en) 2000-09-28 2002-09-03 General Semiconductor, Inc. Trench DMOS transistor having lightly doped source structure
US6593620B1 (en) 2000-10-06 2003-07-15 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6713813B2 (en) 2001-01-30 2004-03-30 Fairchild Semiconductor Corporation Field effect transistor having a lateral depletion structure
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
US6677641B2 (en) 2001-10-17 2004-01-13 Fairchild Semiconductor Corporation Semiconductor structure with improved smaller forward voltage loss and higher blocking capability
US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7132712B2 (en) 2002-11-05 2006-11-07 Fairchild Semiconductor Corporation Trench structure having one or more diodes embedded therein adjacent a PN junction
US6713351B2 (en) * 2001-03-28 2004-03-30 General Semiconductor, Inc. Double diffused field effect transistor having reduced on-resistance
US6657256B2 (en) * 2001-05-22 2003-12-02 General Semiconductor, Inc. Trench DMOS transistor having a zener diode for protection from electro-static discharge
DE10125268C1 (de) * 2001-05-23 2002-08-29 Infineon Technologies Ag Vertikaler MOS-Transistor mit einer Druchbruchstruktur und Verfahren zu dessen Herstellung
US6764906B2 (en) * 2001-07-03 2004-07-20 Siliconix Incorporated Method for making trench mosfet having implanted drain-drift region
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US6621107B2 (en) * 2001-08-23 2003-09-16 General Semiconductor, Inc. Trench DMOS transistor with embedded trench schottky rectifier
US7045859B2 (en) * 2001-09-05 2006-05-16 International Rectifier Corporation Trench fet with self aligned source and contact
US7786533B2 (en) 2001-09-07 2010-08-31 Power Integrations, Inc. High-voltage vertical transistor with edge termination structure
US7221011B2 (en) * 2001-09-07 2007-05-22 Power Integrations, Inc. High-voltage vertical transistor with a multi-gradient drain doping profile
US6573558B2 (en) * 2001-09-07 2003-06-03 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
US6635544B2 (en) * 2001-09-07 2003-10-21 Power Intergrations, Inc. Method of fabricating a high-voltage transistor with a multi-layered extended drain structure
US7061066B2 (en) * 2001-10-17 2006-06-13 Fairchild Semiconductor Corporation Schottky diode using charge balance structure
US6657255B2 (en) * 2001-10-30 2003-12-02 General Semiconductor, Inc. Trench DMOS device with improved drain contact
US6674124B2 (en) 2001-11-15 2004-01-06 General Semiconductor, Inc. Trench MOSFET having low gate charge
US6645815B2 (en) 2001-11-20 2003-11-11 General Semiconductor, Inc. Method for forming trench MOSFET device with low parasitic resistance
US6977203B2 (en) 2001-11-20 2005-12-20 General Semiconductor, Inc. Method of forming narrow trenches in semiconductor substrates
US6822288B2 (en) * 2001-11-20 2004-11-23 General Semiconductor, Inc. Trench MOSFET device with polycrystalline silicon source contact structure
US6657254B2 (en) 2001-11-21 2003-12-02 General Semiconductor, Inc. Trench MOSFET device with improved on-resistance
US6630402B2 (en) 2001-11-21 2003-10-07 General Semiconductor, Inc. Integrated circuit resistant to the formation of cracks in a passivation layer
US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
DE10207309B4 (de) * 2002-02-21 2015-07-23 Infineon Technologies Ag MOS-Transistoreinrichtung
KR100859701B1 (ko) 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
JP3673231B2 (ja) 2002-03-07 2005-07-20 三菱電機株式会社 絶縁ゲート型半導体装置及びゲート配線構造の製造方法
US6781196B2 (en) 2002-03-11 2004-08-24 General Semiconductor, Inc. Trench DMOS transistor having improved trench structure
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
GB0208833D0 (en) * 2002-04-18 2002-05-29 Koninkl Philips Electronics Nv Trench-gate semiconductor devices
US6784505B2 (en) 2002-05-03 2004-08-31 Fairchild Semiconductor Corporation Low voltage high density trench-gated power device with uniformly doped channel and its edge termination technique
US7161208B2 (en) * 2002-05-14 2007-01-09 International Rectifier Corporation Trench mosfet with field relief feature
JP3979258B2 (ja) * 2002-05-21 2007-09-19 富士電機デバイステクノロジー株式会社 Ｍｉｓ半導体装置およびその製造方法
DE10223699B4 (de) * 2002-05-28 2007-11-22 Infineon Technologies Ag MOS-Transistoreinrichtung vom Trenchtyp
JP3677489B2 (ja) 2002-05-29 2005-08-03 Ｎｅｃエレクトロニクス株式会社 縦型電界効果トランジスタ
KR20040011016A (ko) * 2002-07-26 2004-02-05 동부전자 주식회사 알에프 반도체소자 제조방법
US8629019B2 (en) * 2002-09-24 2014-01-14 Vishay-Siliconix Method of forming self aligned contacts for a power MOSFET
US8080459B2 (en) * 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
US7557395B2 (en) * 2002-09-30 2009-07-07 International Rectifier Corporation Trench MOSFET technology for DC-DC converter applications
US6921699B2 (en) * 2002-09-30 2005-07-26 International Rectifier Corporation Method for manufacturing a semiconductor device with a trench termination
US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US7033891B2 (en) 2002-10-03 2006-04-25 Fairchild Semiconductor Corporation Trench gate laterally diffused MOSFET devices and methods for making such devices
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
JP3931138B2 (ja) * 2002-12-25 2007-06-13 三菱電機株式会社 電力用半導体装置及び電力用半導体装置の製造方法
JP3742400B2 (ja) * 2003-04-23 2006-02-01 株式会社東芝 半導体装置及びその製造方法
US7638841B2 (en) 2003-05-20 2009-12-29 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
GB0313857D0 (en) * 2003-06-14 2003-07-23 Koninkl Philips Electronics Nv Trench-gate semiconductor devices
CN100334740C (zh) * 2003-08-26 2007-08-29 茂德科技股份有限公司 功率金属氧化物半导体场效应晶体管的制造方法
JP4746262B2 (ja) * 2003-09-17 2011-08-10 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
JP4567969B2 (ja) * 2003-10-28 2010-10-27 東部エレクトロニクス株式会社 半導体素子のトランジスタ製造方法
KR100994719B1 (ko) 2003-11-28 2010-11-16 페어차일드코리아반도체 주식회사 슈퍼정션 반도체장치
US7279743B2 (en) * 2003-12-02 2007-10-09 Vishay-Siliconix Closed cell trench metal-oxide-semiconductor field effect transistor
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
GB0404747D0 (en) * 2004-03-03 2004-04-07 Koninkl Philips Electronics Nv Trench field effect transistor and method of making it
US7234122B2 (en) * 2004-04-19 2007-06-19 Lsi Corporation Three-dimensional interconnect resistance extraction using variational method
US7183610B2 (en) * 2004-04-30 2007-02-27 Siliconix Incorporated Super trench MOSFET including buried source electrode and method of fabricating the same
US8183629B2 (en) * 2004-05-13 2012-05-22 Vishay-Siliconix Stacked trench metal-oxide-semiconductor field effect transistor device
EP1761953A4 (en) * 2004-06-30 2009-02-25 Advanced Analogic Tech Inc MOS SLUG TRANSISTOR COMPRISING A BLOCKING DIODE
KR100615570B1 (ko) * 2004-07-05 2006-08-25 삼성전자주식회사 둥근 활성코너를 갖는 리세스 채널 모스 트랜지스터의제조방법
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
US7265415B2 (en) 2004-10-08 2007-09-04 Fairchild Semiconductor Corporation MOS-gated transistor with reduced miller capacitance
US7241649B2 (en) * 2004-10-29 2007-07-10 International Business Machines Corporation FinFET body contact structure
CN101185169B (zh) 2005-04-06 2010-08-18 飞兆半导体公司 沟栅场效应晶体管及其形成方法
JP4955958B2 (ja) * 2005-08-04 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置
US7385248B2 (en) 2005-08-09 2008-06-10 Fairchild Semiconductor Corporation Shielded gate field effect transistor with improved inter-poly dielectric
JP4939012B2 (ja) * 2005-08-26 2012-05-23 ルネサスエレクトロニクス株式会社 半導体装置
DE102005059034B4 (de) * 2005-12-10 2007-10-11 X-Fab Semiconductor Foundries Ag SOI-Isolationsgrabenstrukturen
DE102005059035B4 (de) * 2005-12-10 2007-11-08 X-Fab Semiconductor Foundries Ag Isolationsgrabenstrukturen für hohe Spannungen
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
CN101361193B (zh) * 2006-01-18 2013-07-10 维西埃-硅化物公司 具有高静电放电性能的浮动栅极结构
US7667265B2 (en) * 2006-01-30 2010-02-23 Fairchild Semiconductor Corporation Varying mesa dimensions in high cell density trench MOSFET
US7446375B2 (en) * 2006-03-14 2008-11-04 Ciclon Semiconductor Device Corp. Quasi-vertical LDMOS device having closed cell layout
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US8471390B2 (en) 2006-05-12 2013-06-25 Vishay-Siliconix Power MOSFET contact metallization
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
JP5431638B2 (ja) * 2006-10-27 2014-03-05 ローム株式会社 半導体集積回路
US9437729B2 (en) * 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US7468536B2 (en) 2007-02-16 2008-12-23 Power Integrations, Inc. Gate metal routing for transistor with checkerboarded layout
US7595523B2 (en) 2007-02-16 2009-09-29 Power Integrations, Inc. Gate pullback at ends of high-voltage vertical transistor structure
US7557406B2 (en) 2007-02-16 2009-07-07 Power Integrations, Inc. Segmented pillar layout for a high-voltage vertical transistor
US8653583B2 (en) 2007-02-16 2014-02-18 Power Integrations, Inc. Sensing FET integrated with a high-voltage transistor
US7859037B2 (en) 2007-02-16 2010-12-28 Power Integrations, Inc. Checkerboarded high-voltage vertical transistor layout
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US8368126B2 (en) 2007-04-19 2013-02-05 Vishay-Siliconix Trench metal oxide semiconductor with recessed trench material and remote contacts
JP2008300420A (ja) * 2007-05-29 2008-12-11 Nec Electronics Corp 半導体装置及び半導体装置の製造方法
US20090020813A1 (en) * 2007-07-16 2009-01-22 Steven Howard Voldman Formation of lateral trench fets (field effect transistors) using steps of ldmos (lateral double-diffused metal oxide semiconductor) technology
CN103762243B (zh) 2007-09-21 2017-07-28 飞兆半导体公司 功率器件
US9484451B2 (en) * 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US7994005B2 (en) * 2007-11-01 2011-08-09 Alpha & Omega Semiconductor, Ltd High-mobility trench MOSFETs
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
KR20090126849A (ko) * 2008-06-05 2009-12-09 주식회사 동부하이텍 반도체 소자 및 이를 위한 ｓｔｉ 형성 방법
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
US7910983B2 (en) * 2008-09-30 2011-03-22 Infineon Technologies Austria Ag MOS transistor having an increased gate-drain capacitance
US8304829B2 (en) 2008-12-08 2012-11-06 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US8174067B2 (en) 2008-12-08 2012-05-08 Fairchild Semiconductor Corporation Trench-based power semiconductor devices with increased breakdown voltage characteristics
US7943989B2 (en) * 2008-12-31 2011-05-17 Alpha And Omega Semiconductor Incorporated Nano-tube MOSFET technology and devices
US7911260B2 (en) * 2009-02-02 2011-03-22 Infineon Technologies Ag Current control circuits
US8227855B2 (en) 2009-02-09 2012-07-24 Fairchild Semiconductor Corporation Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same
US8148749B2 (en) 2009-02-19 2012-04-03 Fairchild Semiconductor Corporation Trench-shielded semiconductor device
US8072027B2 (en) * 2009-06-08 2011-12-06 Fairchild Semiconductor Corporation 3D channel architecture for semiconductor devices
US8049276B2 (en) 2009-06-12 2011-11-01 Fairchild Semiconductor Corporation Reduced process sensitivity of electrode-semiconductor rectifiers
JP2011044513A (ja) * 2009-08-20 2011-03-03 National Institute Of Advanced Industrial Science & Technology 炭化珪素半導体装置
US9443974B2 (en) * 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9230810B2 (en) 2009-09-03 2016-01-05 Vishay-Siliconix System and method for substrate wafer back side and edge cross section seals
US9431530B2 (en) * 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
US9306056B2 (en) * 2009-10-30 2016-04-05 Vishay-Siliconix Semiconductor device with trench-like feed-throughs
US8604525B2 (en) 2009-11-02 2013-12-10 Vishay-Siliconix Transistor structure with feed-through source-to-substrate contact
JP2011198993A (ja) * 2010-03-19 2011-10-06 Toshiba Corp 半導体装置およびｄｃ−ｄｃコンバータ
JP5531787B2 (ja) * 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
US20120068222A1 (en) * 2010-09-21 2012-03-22 Kabushiki Kaisha Toshiba Semiconductor Device and Method for Manufacturing the Same
US8794151B2 (en) * 2010-11-19 2014-08-05 Wafertech, Llc Silicided MOS capacitor explosive device initiator
JP5738653B2 (ja) * 2011-03-31 2015-06-24 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 絶縁ゲート型半導体装置
US8587059B2 (en) * 2011-04-22 2013-11-19 Infineon Technologies Austria Ag Transistor arrangement with a MOSFET
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
JP2013232533A (ja) * 2012-04-27 2013-11-14 Rohm Co Ltd 半導体装置および半導体装置の製造方法
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device
JP6107453B2 (ja) * 2013-06-13 2017-04-05 住友電気工業株式会社 炭化珪素半導体装置の製造方法
DE102013111966B4 (de) * 2013-10-30 2017-11-02 Infineon Technologies Ag Feldeffekthalbleiterbauelement und Verfahren zu dessen Herstellung
US10325988B2 (en) 2013-12-13 2019-06-18 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped field plates
US9543396B2 (en) 2013-12-13 2017-01-10 Power Integrations, Inc. Vertical transistor device structure with cylindrically-shaped regions
US9419116B2 (en) 2014-01-22 2016-08-16 Alexei Ankoudinov Diodes and methods of manufacturing diodes
US9252293B2 (en) 2014-01-22 2016-02-02 Alexei Ankoudinov Trench field effect diodes and methods of manufacturing those diodes
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
US9847233B2 (en) * 2014-07-29 2017-12-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and formation thereof
JP6421487B2 (ja) * 2014-07-31 2018-11-14 富士電機株式会社 半導体装置および半導体装置の製造方法
US10234486B2 (en) 2014-08-19 2019-03-19 Vishay/Siliconix Vertical sense devices in vertical trench MOSFET
WO2016028944A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Super-junction metal oxide semiconductor field effect transistor
US9425304B2 (en) 2014-08-21 2016-08-23 Vishay-Siliconix Transistor structure with improved unclamped inductive switching immunity
JP6267102B2 (ja) * 2014-12-10 2018-01-24 トヨタ自動車株式会社 半導体装置および半導体装置の製造方法
JP6584857B2 (ja) * 2015-08-11 2019-10-02 株式会社東芝 半導体装置
TW202226592A (zh) * 2020-08-31 2022-07-01 美商ＧｅｎｅＳｉＣ 半導體股份有限公司 經改良之功率器件之設計及製法
JP2023136403A (ja) * 2022-03-17 2023-09-29 株式会社東芝 半導体装置

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412297A (en) 1965-12-16 1968-11-19 United Aircraft Corp Mos field-effect transistor with a onemicron vertical channel
US3924265A (en) 1973-08-29 1975-12-02 American Micro Syst Low capacitance V groove MOS NOR gate and method of manufacture
US4055884A (en) * 1976-12-13 1977-11-01 International Business Machines Corporation Fabrication of power field effect transistors and the resulting structures
US4398339A (en) * 1977-04-15 1983-08-16 Supertex, Inc. Fabrication method for high power MOS device
JPS605228B2 (ja) 1977-10-17 1985-02-08 株式会社日立製作所 半導体装置
US4148047A (en) * 1978-01-16 1979-04-03 Honeywell Inc. Semiconductor apparatus
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPS55146976A (en) 1979-05-02 1980-11-15 Nec Corp Insulating gate field effect transistor
FR2466101A1 (fr) * 1979-09-18 1981-03-27 Thomson Csf Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne
US4374455A (en) 1979-10-30 1983-02-22 Rca Corporation Method for manufacturing a vertical, grooved MOSFET
US4345265A (en) * 1980-04-14 1982-08-17 Supertex, Inc. MOS Power transistor with improved high-voltage capability
US4364074A (en) 1980-06-12 1982-12-14 International Business Machines Corporation V-MOS Device with self-aligned multiple electrodes
JPS5718365A (en) 1980-07-08 1982-01-30 Matsushita Electronics Corp Semiconductor device and manufacture thereof
DE3028561A1 (de) * 1980-07-28 1982-02-18 Siemens AG, 1000 Berlin und 8000 München Hochintegrierter baustein in v-mos-technologie
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
US4680853A (en) * 1980-08-18 1987-07-21 International Rectifier Corporation Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide
EP0047392B1 (de) 1980-08-25 1986-11-20 Deutsche ITT Industries GmbH Hochvolt-Halbleiterschalter
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4983535A (en) * 1981-10-15 1991-01-08 Siliconix Incorporated Vertical DMOS transistor fabrication process
JPS58137254A (ja) 1982-02-10 1983-08-15 Hitachi Ltd 絶縁ゲ−ト半導体装置
US4443931A (en) 1982-06-28 1984-04-24 General Electric Company Method of fabricating a semiconductor device with a base region having a deep portion
US4532534A (en) 1982-09-07 1985-07-30 Rca Corporation MOSFET with perimeter channel
JPS5980970A (ja) 1982-11-01 1984-05-10 Mitsubishi Electric Corp Ｖ溝ｍｏｓ形電界効果トランジスタ
JPS59181668A (ja) 1983-03-31 1984-10-16 Fujitsu Ltd 半導体装置
JPS59193064A (ja) 1983-04-15 1984-11-01 Matsushita Electric Works Ltd 高耐圧縦型トランジスタ装置
JPS6028271A (ja) 1983-07-26 1985-02-13 Nissan Motor Co Ltd 縦型ｍｏｓｆｅｔ
JPS60136378A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体装置およびその製造方法
US4783694A (en) 1984-03-16 1988-11-08 Motorola Inc. Integrated bipolar-MOS semiconductor device with common collector and drain
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4631564A (en) * 1984-10-23 1986-12-23 Rca Corporation Gate shield structure for power MOS device
JPS6212167A (ja) * 1985-07-10 1987-01-21 Tdk Corp 溝部を有する縦形半導体装置の製造方法
JPS6216572A (ja) 1985-07-15 1987-01-24 Tdk Corp 縦形半導体装置およびその製造方法
JPS6237965A (ja) * 1985-08-13 1987-02-18 Tdk Corp 縦形半導体装置およびその製造方法
US5019522A (en) * 1986-03-21 1991-05-28 Advanced Power Technology, Inc. Method of making topographic pattern delineated power MOSFET with profile tailored recessed source
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US5034785A (en) * 1986-03-24 1991-07-23 Siliconix Incorporated Planar vertical channel DMOS structure
US4808543A (en) * 1986-05-07 1989-02-28 Motorola, Inc. Well Extensions for trench devices
US5160491A (en) * 1986-10-21 1992-11-03 Texas Instruments Incorporated Method of making a vertical MOS transistor
JPS63114173A (ja) 1986-10-31 1988-05-19 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS63124762A (ja) 1986-11-13 1988-05-28 Tokyo Electric Co Ltd ステツピングモ−タ
JP2590863B2 (ja) 1987-03-12 1997-03-12 日本電装株式会社 導電変調型ｍｏｓｆｅｔ
US4794561A (en) * 1987-07-02 1988-12-27 Integrated Device Technology, Inc. Static ram cell with trench pull-down transistors and buried-layer ground plate
US4764481A (en) * 1987-08-24 1988-08-16 Delco Electronics Corporation Grown side-wall silicided source/drain self-align CMOS fabrication process
US4893160A (en) * 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
US4914058A (en) * 1987-12-29 1990-04-03 Siliconix Incorporated Grooved DMOS process with varying gate dielectric thickness
US5016068A (en) * 1988-04-15 1991-05-14 Texas Instruments Incorporated Vertical floating-gate transistor

Also Published As

Publication number Publication date
US5298442A (en) 1994-03-29
US6627950B1 (en) 2003-09-30
US5072266A (en) 1991-12-10
PT92740B (pt) 1995-12-29

Similar Documents

Publication Publication Date Title
PT92740A (pt) Protese de joelho modular
PT90953A (pt) Protese de joelho
DE68903859D1 (de) Modulare kniegelenksprothese.
DK69191A (da) Knaeprotese
DE69009509D1 (de) Modulares Knieprothesensystem.
DE69125239D1 (de) Modulares Handstück
DE69226268T2 (de) Kniegelenkprothese
DK0410711T3 (da) Protese
DK237890D0 (da) Incinerator
FR2625907B1 (fr) Appareillage modulaire de musculation
BR8905292A (pt) Derivados de piranobenzoxadiazois
FR2626168B3 (fr) Prothese de hanche modulaire
FI91488B (fi) Seula
DE69226786D1 (de) Kniegelenksorthese
DE68907714D1 (de) Kniegelenksprothese.
FR2629338B1 (fr) Implant femoro-rotulien
FR2575920B1 (fr) Prothese de genou
FR2650489B1 (fr) Bague modulable
FR2645893B1 (fr) Construction modulaire antisismique
FR2628315B1 (fr) Implant cotyloidien
FR2627081B1 (fr) Chevillere de maintien
IT1219194B (it) Turboreattore leggero modulare
BR6802226U (pt) Gondula modular
FR2629708B1 (fr) Prothese de hanche
IT8916308A0 (it) Moletto componibile autoinsabbiante

Legal Events

Date Code Title Description
FG3A Patent granted, date of granting

Effective date: 19950904

MM3A Annulment or lapse

Free format text: LAPSE DUE TO NON-PAYMENT OF FEES

Effective date: 19970331

NF3A Restitutio in integrum

Effective date: 19971113

MM4A Annulment/lapse due to non-payment of fees, searched and examined patent

Free format text: LAPSE DUE TO NON-PAYMENT OF FEES

Effective date: 20100304

MM4A Annulment/lapse due to non-payment of fees, searched and examined patent

Free format text: MAXIMUM VALIDITY LIMIT REACHED

Effective date: 20100906