PL2584075T3 - Osadzanie dużopowierzchniowe i domieszkowanie grafenu oraz produkty go zawierające - Google Patents
Osadzanie dużopowierzchniowe i domieszkowanie grafenu oraz produkty go zawierająceInfo
- Publication number
- PL2584075T3 PL2584075T3 PL13151839T PL13151839T PL2584075T3 PL 2584075 T3 PL2584075 T3 PL 2584075T3 PL 13151839 T PL13151839 T PL 13151839T PL 13151839 T PL13151839 T PL 13151839T PL 2584075 T3 PL2584075 T3 PL 2584075T3
- Authority
- PL
- Poland
- Prior art keywords
- graphene
- doping
- same
- large area
- products including
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/188—Preparation by epitaxial growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Catalysts (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/461,343 US8507797B2 (en) | 2009-08-07 | 2009-08-07 | Large area deposition and doping of graphene, and products including the same |
EP10739729.1A EP2462264B1 (en) | 2009-08-07 | 2010-07-22 | Large area deposition and doping of graphene |
EP13151839.1A EP2584075B1 (en) | 2009-08-07 | 2010-07-22 | Large area deposition and doping of graphene, and products including the same |
Publications (1)
Publication Number | Publication Date |
---|---|
PL2584075T3 true PL2584075T3 (pl) | 2018-11-30 |
Family
ID=42829044
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL10739729T PL2462264T3 (pl) | 2009-08-07 | 2010-07-22 | OSADZANIE DUŻOPOWIERZCHNIOWE i DOMIESZKOWANIE GRAFENU |
PL13151838T PL2584074T3 (pl) | 2009-08-07 | 2010-07-22 | Osadzanie na dużych powierzchniach i domieszkowanie grafenu oraz wyroby zawierające grafen |
PL13151839T PL2584075T3 (pl) | 2009-08-07 | 2010-07-22 | Osadzanie dużopowierzchniowe i domieszkowanie grafenu oraz produkty go zawierające |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PL10739729T PL2462264T3 (pl) | 2009-08-07 | 2010-07-22 | OSADZANIE DUŻOPOWIERZCHNIOWE i DOMIESZKOWANIE GRAFENU |
PL13151838T PL2584074T3 (pl) | 2009-08-07 | 2010-07-22 | Osadzanie na dużych powierzchniach i domieszkowanie grafenu oraz wyroby zawierające grafen |
Country Status (12)
Country | Link |
---|---|
US (2) | US8507797B2 (pl) |
EP (4) | EP2462264B1 (pl) |
JP (1) | JP5667188B2 (pl) |
KR (1) | KR101698228B1 (pl) |
CN (1) | CN102597336B (pl) |
BR (1) | BR112012002814A2 (pl) |
IN (1) | IN2012DN00996A (pl) |
MX (1) | MX2012001605A (pl) |
PL (3) | PL2462264T3 (pl) |
RU (1) | RU2567949C2 (pl) |
TW (1) | TW201111278A (pl) |
WO (1) | WO2011016837A1 (pl) |
Families Citing this family (108)
Publication number | Priority date | Publication date | Assignee | Title |
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US8507797B2 (en) | 2009-08-07 | 2013-08-13 | Guardian Industries Corp. | Large area deposition and doping of graphene, and products including the same |
US8269931B2 (en) * | 2009-09-14 | 2012-09-18 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
KR101652787B1 (ko) * | 2009-11-12 | 2016-09-01 | 삼성전자주식회사 | 대면적 그라핀의 제조방법 및 전사방법 |
US9306099B2 (en) * | 2009-12-01 | 2016-04-05 | Samsung Electronics Co., Ltd. | Material including graphene and an inorganic material and method of manufacturing the material |
US8563965B2 (en) | 2010-02-02 | 2013-10-22 | The Invention Science Fund I, Llc | Doped graphene electronic materials |
US8354323B2 (en) | 2010-02-02 | 2013-01-15 | Searete Llc | Doped graphene electronic materials |
US8426842B2 (en) * | 2010-02-02 | 2013-04-23 | The Invention Science Fund I, Llc | Doped graphene electronic materials |
US11071241B2 (en) * | 2010-03-05 | 2021-07-20 | Graphene Square Inc. | Electromagnetic shielding method using graphene and electromagnetic shielding material |
US8890277B2 (en) * | 2010-03-15 | 2014-11-18 | University Of Florida Research Foundation Inc. | Graphite and/or graphene semiconductor devices |
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US9257509B2 (en) | 2010-12-21 | 2016-02-09 | The Trustees Of Columbia University In The City Of New York | Electrical devices with graphene on boron nitride |
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US8739728B2 (en) * | 2011-04-07 | 2014-06-03 | Dynamic Micro Systems, Semiconductor Equipment Gmbh | Methods and apparatuses for roll-on coating |
CN102191476B (zh) * | 2011-04-11 | 2014-12-10 | 兰州大学 | 硫掺杂石墨烯薄膜的制备方法 |
US8388924B2 (en) | 2011-04-21 | 2013-03-05 | The Aerospace Corporation | Method for growth of high quality graphene films |
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US8872159B2 (en) * | 2011-09-29 | 2014-10-28 | The United States Of America, As Represented By The Secretary Of The Navy | Graphene on semiconductor detector |
JP5856423B2 (ja) | 2011-09-30 | 2016-02-09 | 株式会社東芝 | 導電材料およびこれを用いた電気素子 |
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EP2462264B1 (en) | 2018-03-14 |
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EP2584074B1 (en) | 2018-04-04 |
WO2011016837A1 (en) | 2011-02-10 |
KR20120080168A (ko) | 2012-07-16 |
CN102597336B (zh) | 2017-09-22 |
CN102597336A (zh) | 2012-07-18 |
PL2462264T3 (pl) | 2018-07-31 |
BR112012002814A2 (pt) | 2020-08-11 |
US8507797B2 (en) | 2013-08-13 |
MX2012001605A (es) | 2012-06-08 |
EP2584073A3 (en) | 2013-07-10 |
EP2462264A1 (en) | 2012-06-13 |
RU2567949C2 (ru) | 2015-11-10 |
US9418770B2 (en) | 2016-08-16 |
EP2584073B1 (en) | 2020-05-06 |
JP5667188B2 (ja) | 2015-02-12 |
RU2012108604A (ru) | 2013-09-27 |
IN2012DN00996A (pl) | 2015-04-10 |
PL2584074T3 (pl) | 2018-10-31 |
US20130309475A1 (en) | 2013-11-21 |
JP2013501696A (ja) | 2013-01-17 |
EP2584075A2 (en) | 2013-04-24 |
TW201111278A (en) | 2011-04-01 |
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