KR970077314A - Semiconductor dry etching method - Google Patents

Semiconductor dry etching method Download PDF

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Publication number
KR970077314A
KR970077314A KR1019960017917A KR19960017917A KR970077314A KR 970077314 A KR970077314 A KR 970077314A KR 1019960017917 A KR1019960017917 A KR 1019960017917A KR 19960017917 A KR19960017917 A KR 19960017917A KR 970077314 A KR970077314 A KR 970077314A
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KR
South Korea
Prior art keywords
etching
etching step
dry etching
wafer
helium
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Application number
KR1019960017917A
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Korean (ko)
Inventor
이선훈
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960017917A priority Critical patent/KR970077314A/en
Publication of KR970077314A publication Critical patent/KR970077314A/en

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Abstract

웨이퍼 상에 사다리꼴형상의 프로파일(Profile)을 형성할 수 있는 반도체 건식식각방법에 관한 것이다.To a semiconductor dry etching method capable of forming a trapezoidal profile on a wafer.

본 발명은, 통상의 사진공정이 진행된 웨이퍼를 헬륨(He)과 설퍼 헥사플루오라이드(SF6)가 혼합된 가스를 이용하여 식각하는 제1식각단계, 및 상기 제1단계를 수행한 웨이퍼를 헬륨(He)과 설퍼 헥사플루오라이드(SF6) 그리고 산소(O2)가 혼합된 가스를 이용하여 식각하는 제2식각단계를 구비하여 이루어진다.The present invention relates to a method of manufacturing a semiconductor device, comprising: a first etching step of etching a wafer on which a normal photolithography step has been performed using a gas in which helium (He) and sulfur hexafluoride (SF 6 ) And a second etching step of performing etching using a mixed gas of helium (He), sulfur hexafluoride (SF 6 ), and oxygen (O 2 ).

따라서, 건식식각시 산소가스를 이용하여 웨이퍼 상에 사다리꼴 형상의 프로파일을 형성할 수 있는 효과가 있다.Accordingly, it is possible to form a trapezoidal profile on the wafer by using oxygen gas during dry etching.

Description

반도체 건식식각방법Semiconductor dry etching method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명에 따른 반도체 건식식각방법의 일 실시예를 나타내는 공정도이다.FIG. 1 is a process diagram showing an embodiment of a semiconductor dry etching method according to the present invention.

Claims (4)

통상의 사진공정이 진행된 웨이퍼를 헬륨(He)과 설퍼 헥사플루오라이드(SF6)가 혼합된 가스를 이용하여 식각하는 제1식각단계; 및 상기 제1식각단계를 수행한 웨이퍼를 헬륨(He)과 설퍼 헥사플루오라이드(SF6) 그리고 산소(O2)가 혼합된 가스를 이용하여 식각하는 제2식각단계를 구비하여 이루어지는 반도체 건식식각방법.A first etching step of etching the wafer on which a normal photolithography process has been performed by using a gas in which helium (He) and sulfur hexafluoride (SF 6 ) are mixed; And a second etching step of etching the wafer having been subjected to the first etching step using a gas in which helium (He), sulfur hexafluoride (SF 6 ) and oxygen (O 2 ) are mixed, Way. 제1항에 있어서, 상기 제1식각단계 및 제2식각단계에서 사용되는 헬륨의 양은 25∼35 SCCM 정도로 사용함을 특징으로 하는 상기 반도체 건식식각방법.The method as claimed in claim 1, wherein the amount of helium used in the first etching step and the second etching step is about 25 to 35 SCCM. 제1항에 있어서, 상기 제1식각단계 및 제2식각단계에서 사용되는 설퍼 헥사플루오라이드의 양은 60∼80 SCCM 정도로 사용함을 특징으로 하는 상기 반도체 건식식각방법.The method of claim 1, wherein the amount of sulfur hexafluoride used in the first etching step and the second etching step is about 60 to 80 SCCM. 제1항에 있어서, 상기 제2식각단계에서 사용되는 산소의 양은 5∼20 SCCM 정도로 사용함을 특징으로 하는 상기 반도체 건식식각방법.The method according to claim 1, wherein the amount of oxygen used in the second etching step is about 5 to 20 SCCM. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017917A 1996-05-25 1996-05-25 Semiconductor dry etching method KR970077314A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017917A KR970077314A (en) 1996-05-25 1996-05-25 Semiconductor dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017917A KR970077314A (en) 1996-05-25 1996-05-25 Semiconductor dry etching method

Publications (1)

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KR970077314A true KR970077314A (en) 1997-12-12

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KR1019960017917A KR970077314A (en) 1996-05-25 1996-05-25 Semiconductor dry etching method

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