KR970077202A - Method of forming a contact of a semiconductor device - Google Patents

Method of forming a contact of a semiconductor device Download PDF

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Publication number
KR970077202A
KR970077202A KR1019960016222A KR19960016222A KR970077202A KR 970077202 A KR970077202 A KR 970077202A KR 1019960016222 A KR1019960016222 A KR 1019960016222A KR 19960016222 A KR19960016222 A KR 19960016222A KR 970077202 A KR970077202 A KR 970077202A
Authority
KR
South Korea
Prior art keywords
contact
semiconductor device
forming
dry etching
present
Prior art date
Application number
KR1019960016222A
Other languages
Korean (ko)
Inventor
한준호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960016222A priority Critical patent/KR970077202A/en
Publication of KR970077202A publication Critical patent/KR970077202A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체소자의 콘택 형성 공정에 있어서, 콘택 건식식각공정시 발생하는 패턴 임계치수의 오차를 보정하기 위한 콘택 형성 방법에 관한 것이다.The present invention relates to a contact forming method for correcting an error of a pattern critical number generated in a contact dry etching process in a contact forming process of a semiconductor device.

본 발명은 콘택 건식식각공정 전에 PR 마스크를 필요한 양만큼 추가적으로 제거하는 공정을 진행함으로써 이루어진다.The present invention is achieved by carrying out a process of additionally removing a PR mask by a necessary amount before the contact dry etching process.

따라서, 본 발명의 반도체소자의 콘택 형성 방법은 콘택 패턴의 정확도 및 정밀도를 향상시켜 반도체소자의 신뢰성을 확보할 수 있는 효과가 있다.Therefore, the method of forming a contact of a semiconductor device of the present invention has the effect of improving the accuracy and precision of a contact pattern and securing the reliability of the semiconductor device.

Description

반도체 소자의 콘택 형성 방법Method of forming a contact of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명에 따라 Pr 추가제거공정을 진행한 후의 콘택 영역을 나타내는 단면도이다.FIG. 3 is a cross-sectional view showing the contact region after the Pr addition / removal process is performed according to the present invention. FIG.

Claims (3)

PR 마스크를 형성하기 위한 콘택 포토공정 단계 및 중간절연막을 제거하기 위한 건식식각공정 단계를 포함하는 반도체소자의 콘택 형성 방법에 있어서, 상기 건식식각공정 전에 PR 마스크를 필요한 만큼 추가적으로 제거하는 PR 추가제거공정을 진행함을 특징으로 하는 반도체소자의 콘택 형성 방법.A method of forming a contact of a semiconductor device, the method comprising: a contact photolithography process for forming a PR mask; and a dry etching process for removing the intermediate insulation layer, the contact formation process comprising: a PR addition mask removal step Wherein the step of forming a contact of the semiconductor device comprises the steps of: 제1항에 있어서, 상기 Pr 추가제거공정이 상기 건식식각공정을 진행하는 건식식각장치에서 이루어지는 것을 특징으로 하는 반도체소자의 콘택 형성 방법.The method of forming a contact of a semiconductor device according to claim 1, wherein the Pr addition / removal process is performed in a dry etching apparatus in which the dry etching process is performed. 제1항 또는 제2항에 있어서, 상기 PR 추가제거공정이 O2플라즈마에 의해 이루어지는 것을 특징으로 하는 상기 반도체소자의 콘택 형성 방법.The method of claim 1 or 2, wherein the PR additional removal process is performed by O 2 plasma. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960016222A 1996-05-15 1996-05-15 Method of forming a contact of a semiconductor device KR970077202A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960016222A KR970077202A (en) 1996-05-15 1996-05-15 Method of forming a contact of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960016222A KR970077202A (en) 1996-05-15 1996-05-15 Method of forming a contact of a semiconductor device

Publications (1)

Publication Number Publication Date
KR970077202A true KR970077202A (en) 1997-12-12

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ID=66219477

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016222A KR970077202A (en) 1996-05-15 1996-05-15 Method of forming a contact of a semiconductor device

Country Status (1)

Country Link
KR (1) KR970077202A (en)

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