KR970077240A - Dry Etching Method Using Plasma - Google Patents

Dry Etching Method Using Plasma Download PDF

Info

Publication number
KR970077240A
KR970077240A KR1019960016213A KR19960016213A KR970077240A KR 970077240 A KR970077240 A KR 970077240A KR 1019960016213 A KR1019960016213 A KR 1019960016213A KR 19960016213 A KR19960016213 A KR 19960016213A KR 970077240 A KR970077240 A KR 970077240A
Authority
KR
South Korea
Prior art keywords
dry etching
plasma
wafer
etching process
etching method
Prior art date
Application number
KR1019960016213A
Other languages
Korean (ko)
Inventor
장재선
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960016213A priority Critical patent/KR970077240A/en
Publication of KR970077240A publication Critical patent/KR970077240A/en

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

플라즈마를 이용한 웨이퍼 건식식각 후 형성되는 폴리머(Polymer)를 제거하는 플라즈마를 이용한 건식식각방법에 관한 것이다.The present invention relates to a dry etching method using a plasma for removing a polymer formed after a wafer dry etching process using a plasma.

본 발명은, 건식식각공정 후 웨이퍼 상의 포토레지스트를 애싱(Ashing) 및 황산스트립공정을 수행하는 플라즈마를 이용한 건식식각공정에 있어서, 상기 웨이퍼 상에 잔존하는 폴리머(Polymer)를 제거하기 위하여 상기 웨이퍼를 플루오르화수소에 담그는 HF처리를 수행함을 구비하여 이루어진다.The present invention relates to a dry etching process using a plasma for performing ashing and sulfuric acid strip processes on a photoresist on a wafer after a dry etching process to remove the polymer remaining on the wafer, And performing an HF treatment immersed in hydrogen fluoride.

따라서, 폴리머가 절연체로 적용하는 문제점을 해결할 수 있다.Therefore, the problem that the polymer is applied as an insulator can be solved.

Description

플라즈마를 이용한 건식식각방법Dry Etching Method Using Plasma

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명의 일 실시예에 따른 플라즈마를 이용한 건식식각방법을 설명하기 위한 공정도이다.FIG. 1 is a process diagram for explaining a dry etching method using plasma according to an embodiment of the present invention.

Claims (4)

건식식각공정 후 웨이퍼 상의 포토레지스트를 애싱(Ashing) 및 황산스트립공정을 수행하는 플라즈마를 이용한 건식식각공정에 있어서, 상기 웨이퍼 상에 잔존하는 폴리머(Polymer)를 제거하기 위하여 상기 웨이퍼를 플루오르화수소에 담그는 HF처리를 수행함을 특징으로 하는 반도체 건식각방법.In a dry etching process using a plasma for performing an ashing and a sulfuric acid strip process on a photoresist on a wafer after a dry etching process, the wafer is immersed in hydrogen fluoride to remove the polymer remaining on the wafer HF treatment is carried out. 제1항에 있어서, 상기 HF처리를 건식식각 후에 수행함을 특징으로 하는 상기 반도체 건식식각방법.The method as claimed in claim 1, wherein the HF treatment is performed after dry etching. 제1항에 있어서, 상기 HF처리를 애싱후에 수행함을 특징으로 하는 상기 반도체 건식식각방법.The method of claim 1, wherein the HF treatment is performed after ashing. 제1항에 있어서, 상기 HF처리를 황산스트립 후에 수행함을 특징으로 하는 상기 반도체 건식식각방법.The method of claim 1, wherein the HF treatment is performed after the sulfuric acid strip. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960016213A 1996-05-15 1996-05-15 Dry Etching Method Using Plasma KR970077240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960016213A KR970077240A (en) 1996-05-15 1996-05-15 Dry Etching Method Using Plasma

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960016213A KR970077240A (en) 1996-05-15 1996-05-15 Dry Etching Method Using Plasma

Publications (1)

Publication Number Publication Date
KR970077240A true KR970077240A (en) 1997-12-12

Family

ID=66220063

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016213A KR970077240A (en) 1996-05-15 1996-05-15 Dry Etching Method Using Plasma

Country Status (1)

Country Link
KR (1) KR970077240A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100368894B1 (en) * 1999-12-30 2003-01-24 주식회사 하이닉스반도체 Method for forming contact in semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100368894B1 (en) * 1999-12-30 2003-01-24 주식회사 하이닉스반도체 Method for forming contact in semiconductor device

Similar Documents

Publication Publication Date Title
KR970066727A (en) Photoresist removal method
KR970077240A (en) Dry Etching Method Using Plasma
KR970072144A (en) Semiconductor dry etching method
KR980005550A (en) Method of forming a contact hole in a semiconductor device
KR970063441A (en) Semiconductor wafer regeneration method
KR960001911A (en) Method of removing photoresist of semiconductor device
KR970003584A (en) Cleaning Method of Semiconductor Substrate
KR970049078A (en) Polymer removal method of semiconductor device
KR950025492A (en) Polymer removal method during polysilicon etching
KR980005899A (en) Stripping method of photoresist
KR970067667A (en) Polymer removal method
KR950014503B1 (en) Method of removing polymer after dryetching polysilicone
KR950021188A (en) Rinsing and drying method after wafer hydrofluoric acid treatment
KR950007004A (en) Method of removing nitride film of semiconductor device
KR970063538A (en) Semiconductor device manufacturing method
KR980006390A (en) Semiconductor device manufacturing method
KR940016540A (en) Cleaning Method of Semiconductor Devices
KR970077213A (en) Contact etching method of semiconductor device
KR950021187A (en) Wafer cleaning method
KR930005124A (en) How to remove the sidewall polymer during contact etch
KR970023813A (en) Semiconductor device manufacturing method
KR970077245A (en) Method for etching a metal film of a semiconductor device
KR970072146A (en) Cleaning method of semiconductor device
KR950030233A (en) How to remove photoresist
KR970022585A (en) Ring wet etching processing method of semiconductor wafer

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination