KR970077240A - Dry Etching Method Using Plasma - Google Patents
Dry Etching Method Using Plasma Download PDFInfo
- Publication number
- KR970077240A KR970077240A KR1019960016213A KR19960016213A KR970077240A KR 970077240 A KR970077240 A KR 970077240A KR 1019960016213 A KR1019960016213 A KR 1019960016213A KR 19960016213 A KR19960016213 A KR 19960016213A KR 970077240 A KR970077240 A KR 970077240A
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- KR
- South Korea
- Prior art keywords
- dry etching
- plasma
- wafer
- etching process
- etching method
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
플라즈마를 이용한 웨이퍼 건식식각 후 형성되는 폴리머(Polymer)를 제거하는 플라즈마를 이용한 건식식각방법에 관한 것이다.The present invention relates to a dry etching method using a plasma for removing a polymer formed after a wafer dry etching process using a plasma.
본 발명은, 건식식각공정 후 웨이퍼 상의 포토레지스트를 애싱(Ashing) 및 황산스트립공정을 수행하는 플라즈마를 이용한 건식식각공정에 있어서, 상기 웨이퍼 상에 잔존하는 폴리머(Polymer)를 제거하기 위하여 상기 웨이퍼를 플루오르화수소에 담그는 HF처리를 수행함을 구비하여 이루어진다.The present invention relates to a dry etching process using a plasma for performing ashing and sulfuric acid strip processes on a photoresist on a wafer after a dry etching process to remove the polymer remaining on the wafer, And performing an HF treatment immersed in hydrogen fluoride.
따라서, 폴리머가 절연체로 적용하는 문제점을 해결할 수 있다.Therefore, the problem that the polymer is applied as an insulator can be solved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제1도는 본 발명의 일 실시예에 따른 플라즈마를 이용한 건식식각방법을 설명하기 위한 공정도이다.FIG. 1 is a process diagram for explaining a dry etching method using plasma according to an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016213A KR970077240A (en) | 1996-05-15 | 1996-05-15 | Dry Etching Method Using Plasma |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016213A KR970077240A (en) | 1996-05-15 | 1996-05-15 | Dry Etching Method Using Plasma |
Publications (1)
Publication Number | Publication Date |
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KR970077240A true KR970077240A (en) | 1997-12-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019960016213A KR970077240A (en) | 1996-05-15 | 1996-05-15 | Dry Etching Method Using Plasma |
Country Status (1)
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KR (1) | KR970077240A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100368894B1 (en) * | 1999-12-30 | 2003-01-24 | 주식회사 하이닉스반도체 | Method for forming contact in semiconductor device |
-
1996
- 1996-05-15 KR KR1019960016213A patent/KR970077240A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100368894B1 (en) * | 1999-12-30 | 2003-01-24 | 주식회사 하이닉스반도체 | Method for forming contact in semiconductor device |
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