KR960001911A - Method of removing photoresist of semiconductor device - Google Patents

Method of removing photoresist of semiconductor device Download PDF

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Publication number
KR960001911A
KR960001911A KR1019940013497A KR19940013497A KR960001911A KR 960001911 A KR960001911 A KR 960001911A KR 1019940013497 A KR1019940013497 A KR 1019940013497A KR 19940013497 A KR19940013497 A KR 19940013497A KR 960001911 A KR960001911 A KR 960001911A
Authority
KR
South Korea
Prior art keywords
photoresist
semiconductor device
present
removing photoresist
relates
Prior art date
Application number
KR1019940013497A
Other languages
Korean (ko)
Inventor
강영수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940013497A priority Critical patent/KR960001911A/en
Publication of KR960001911A publication Critical patent/KR960001911A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C11D7/30—Halogenated hydrocarbons
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 폴리층 식각 또는 고농도 불순물 이온주입을 목적으로 형성된 감광막을 제거시키기 위한 방법에 관한 것으로, 폴리층 식각 후 생성되는 폴리머와 상기 폴리층 측벽 및 실리콘기판의 노출부분에 축적되는 가스응축물 및 감광막을 동시에 제거시키기 위하여 O2+CF4플라즈마(plasma)를 이용하여 감광막 제거공정을 실시한 후 H2SO4로 웨이퍼를 세정(cleaning) 시키므로써 상기 감광막, 폴리머 및 가스응축물을 동시에 효과적으로 제거시킬 수 있는 반도체 소자의 감광막 제거방법에 관한 것이다.The present invention relates to a method for removing a photoresist film formed for the purpose of poly-layer etching or high concentration impurity ion implantation of a semiconductor device. In order to remove the condensate and the photoresist at the same time, the photoresist removal process is performed using O 2 + CF 4 plasma, and the photoresist, polymer and gas condensate are simultaneously removed by cleaning the wafer with H 2 SO 4 . The present invention relates to a method for removing a photosensitive film of a semiconductor device that can be effectively removed.

Description

반도체 소자의 감광막 제거방법Method of removing photoresist of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A 내지 제1D도는 종래 반도체 소자의 감광막 제거방법을 설명하기 위한 소자의 단면도.1A to 1D are cross-sectional views of a device for explaining a method of removing a photosensitive film of a conventional semiconductor device.

제2A 내지 제2C도는 본 발명의 제1실시예를 설명하기 설명하기 위한 소자의 단면도.2A to 2C are cross-sectional views of elements for explaining the first embodiment of the present invention.

제3A 내지 제3C도는 본 발명의 제2실시예를 설명하기 위한 소자의 단면도.3A to 3C are cross-sectional views of devices for explaining the second embodiment of the present invention.

Claims (2)

반도체 소자의 감광막 제거방법에 있어서, 폴리층 식각 또는 고농도 불순물 이온주입을 목적으로 형성된 감광막을 제거시키기 위해 O2+CF4플라즈마를 사용하여 상기 감광막을 제거시키는 단계와, 상기 단계로부터 H2SO4를 사용하여 웨이퍼를 세척하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 감광막 제거방법.A method for removing a photoresist of a semiconductor device, comprising: removing the photoresist using an O 2 + CF 4 plasma to remove a photoresist formed for the purpose of poly-layer etching or high concentration impurity ion implantation, and from the step, H 2 SO 4 Method for removing a photosensitive film of a semiconductor device comprising the step of washing the wafer using. 제1항에 있어서, 상기 CF4가스량은 O2가스량의 6%±5% 정도인 것을 특징으로 하는 반도체 소자의 감광막 제거방법.The method of claim 1, wherein the amount of CF 4 gas is about 6% ± 5% of the amount of O 2 gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940013497A 1994-06-15 1994-06-15 Method of removing photoresist of semiconductor device KR960001911A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940013497A KR960001911A (en) 1994-06-15 1994-06-15 Method of removing photoresist of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940013497A KR960001911A (en) 1994-06-15 1994-06-15 Method of removing photoresist of semiconductor device

Publications (1)

Publication Number Publication Date
KR960001911A true KR960001911A (en) 1996-01-26

Family

ID=66685742

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940013497A KR960001911A (en) 1994-06-15 1994-06-15 Method of removing photoresist of semiconductor device

Country Status (1)

Country Link
KR (1) KR960001911A (en)

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