KR970072381A - 이에스디(esd) 보호회로의 구조 및 제조방법 - Google Patents
이에스디(esd) 보호회로의 구조 및 제조방법 Download PDFInfo
- Publication number
- KR970072381A KR970072381A KR1019960010068A KR19960010068A KR970072381A KR 970072381 A KR970072381 A KR 970072381A KR 1019960010068 A KR1019960010068 A KR 1019960010068A KR 19960010068 A KR19960010068 A KR 19960010068A KR 970072381 A KR970072381 A KR 970072381A
- Authority
- KR
- South Korea
- Prior art keywords
- esd protection
- protection circuit
- insulating film
- gate insulating
- radius
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract 7
- 239000000758 substrate Substances 0.000 claims abstract 4
- 238000000034 method Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 ESD 보호회로의 구조 및 제조방법에 관한 것으로, ESD(Electrostatic-Discharge) 특성을 개선하여 과잉전압으로 인한 내부회로의 파괴를 방지하도록 한 것이다.
본 발명에 따른 ESD 보호회로의 구조는 패드를 통해 내부회로쪽으로 인가되는 과잉 전압을 차단시켜 주는 반도체 소자의 ESD 보호회로에 있어서, 상기 ESD 보호회로로부터 약 1000 ㎛ 반경이내에 형성되는 ESD 보호회로 및 내부회로의 각 능동소자의 게이트 절연막 두께가 약 1000 ㎛ 반경이외에 형성되는 능동소자의 게이트 절연막 보다 두껍게 형성되어 있는 것을 특징으로 한다.
또한 본 발명에 따른 ESD 보호회로의 제조방법은 패드를 통해 내부회로쪽으로 인가되는 과잉전압을 차단시켜 주는 반도체소자의 ESD 보호회로에 있어서, 반도체기판상에 필드영역과 활성영역을 격리형성하여 ESD 보호회로부와 내부회로부를 정의하는 단계; 상기 ESD 보호회로로부터 1000 ㎛ 반경이내의 반도체기판상의 활성영역에 이 영역내에 형성되는 능동소자의 게이트 절연막을 상기 약 1000 ㎛ 반경이외에 형성되는 능동소자의 게이트 절연막 보다 두껍게 형성하는 단계를 포함하여 이루어진다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명의 제1실시예에 따른 ESD 보호회로의 구성도, 제7도는 본 발명의 제1실시예에 따른 ESD 보호회로의 레이아웃도, 제8도는 제7도의 Ⅷ-Ⅷ선에 따른 ESD 보호회로의 단면도.
Claims (2)
- 패드를 통해 내부회로쪽으로 인가되는 과잉전압을 차단시켜 주는 반도체소자의 ESD 보호회로에 있어서, 상기 ESD 보호회로로부터 약 1000 ㎛ 반경이내에 형성되는 ESD 보호회로 및 내부회로의 각 능동소자의 게이트 절연막 두께가 상기 약 1000 ㎛ 반경이외에 형성되는 능동소자의 게이트 절연막 보다 두껍게 형성되어 있는 것을 특징으로 하는 ESD 보호회로의 구조.
- 패드를 통해 내부회로쪽으로 인가되는 과잉전압을 차단시켜 주는 반도체소자의 ESD 보호회로에 있어서, 반도체기판상에 필드영역과 활성영역을 격리형성하여 ESD 보호회로부와 내부회로부를 정의하는 단계; 상기 ESD 보호회로부로부터 1000 ㎛ 반경이내의 반도체기판상의 활성영역에 이 영역내에 형성되는 능동소자의 게이트 절연막을 상기 약 1000 ㎛ 반경이외에 형성되는 능동소자의 게이트 절연막보다 두껍게 형성하는 단계를 포함하여 이루어지는 것을 특징으로 하는 ESD 보호회로의 제조방법.※ 참고사항: 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010068A KR100223833B1 (ko) | 1996-04-03 | 1996-04-03 | 이에스디 보호회로의 구조 및 제조방법 |
TW085105622A TW368743B (en) | 1996-04-03 | 1996-05-13 | Electrostatic-discharge protecting circuit and method the same |
JP8289015A JPH09270493A (ja) | 1996-04-03 | 1996-10-14 | 能動素子保護構造およびその構造の形成方法 |
US08/747,659 US5818087A (en) | 1996-04-03 | 1996-11-13 | Electrostatic-discharge protecting circuit and method |
US09/049,122 US5893733A (en) | 1996-04-03 | 1998-03-27 | Method of forming an electrostatic-discharge protecting circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960010068A KR100223833B1 (ko) | 1996-04-03 | 1996-04-03 | 이에스디 보호회로의 구조 및 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970072381A true KR970072381A (ko) | 1997-11-07 |
KR100223833B1 KR100223833B1 (ko) | 1999-10-15 |
Family
ID=19454990
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960010068A KR100223833B1 (ko) | 1996-04-03 | 1996-04-03 | 이에스디 보호회로의 구조 및 제조방법 |
Country Status (4)
Country | Link |
---|---|
US (2) | US5818087A (ko) |
JP (1) | JPH09270493A (ko) |
KR (1) | KR100223833B1 (ko) |
TW (1) | TW368743B (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6535034B1 (en) * | 1997-07-30 | 2003-03-18 | Programmable Silicon Solutions | High performance integrated circuit devices adaptable to use lower supply voltages with smaller device geometries |
US6426673B2 (en) | 1997-07-30 | 2002-07-30 | Programmable Silicon Solutions | High performance integrated radio frequency circuit devices |
US6100127A (en) * | 1997-12-12 | 2000-08-08 | Texas Instruments - Acer Incorporated | Self-aligned silicided MOS transistor with a lightly doped drain ballast resistor for ESD protection |
US6917095B1 (en) | 2000-05-30 | 2005-07-12 | Altera Corporation | Integrated radio frequency circuits |
US6784496B1 (en) * | 2000-09-25 | 2004-08-31 | Texas Instruments Incorporated | Circuit and method for an integrated charged device model clamp |
US6730968B1 (en) * | 2002-07-25 | 2004-05-04 | Taiwan Semiconductor Manufacturing Company | Whole chip ESD protection |
US8208233B2 (en) * | 2008-03-18 | 2012-06-26 | Mediatek Inc. | ESD protection circuit and method thereof |
CN105098743B (zh) * | 2014-05-04 | 2018-09-18 | 中芯国际集成电路制造(上海)有限公司 | 动态静电放电钳位电路 |
US10096587B1 (en) | 2017-10-26 | 2018-10-09 | Global Foundries Inc. | Fin-based diode structures with a realigned feature layout |
CN109979931B (zh) * | 2017-12-28 | 2020-11-10 | 无锡华润上华科技有限公司 | 一种双向静电放电保护器件 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2644342B2 (ja) * | 1989-09-01 | 1997-08-25 | 東芝マイクロエレクトロニクス株式会社 | 入力保護回路を備えた半導体装置 |
JPH03196677A (ja) * | 1989-12-26 | 1991-08-28 | Nec Corp | 半導体装置 |
US5672527A (en) * | 1996-03-08 | 1997-09-30 | United Microelectronics Corp. | Method for fabricating an electrostatic discharge protection circuit |
US5674761A (en) * | 1996-05-02 | 1997-10-07 | Etron Technology, Inc. | Method of making ESD protection device structure for low supply voltage applications |
US5663082A (en) * | 1996-05-28 | 1997-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostactic discharge protection structure for lightly doped CMOS integrated circuit process |
-
1996
- 1996-04-03 KR KR1019960010068A patent/KR100223833B1/ko not_active IP Right Cessation
- 1996-05-13 TW TW085105622A patent/TW368743B/zh not_active IP Right Cessation
- 1996-10-14 JP JP8289015A patent/JPH09270493A/ja active Pending
- 1996-11-13 US US08/747,659 patent/US5818087A/en not_active Expired - Fee Related
-
1998
- 1998-03-27 US US09/049,122 patent/US5893733A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5893733A (en) | 1999-04-13 |
JPH09270493A (ja) | 1997-10-14 |
KR100223833B1 (ko) | 1999-10-15 |
US5818087A (en) | 1998-10-06 |
TW368743B (en) | 1999-09-01 |
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