KR970013219A - 반도체 소자의 베리어 금속층 형성방법 - Google Patents

반도체 소자의 베리어 금속층 형성방법 Download PDF

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Publication number
KR970013219A
KR970013219A KR1019950025926A KR19950025926A KR970013219A KR 970013219 A KR970013219 A KR 970013219A KR 1019950025926 A KR1019950025926 A KR 1019950025926A KR 19950025926 A KR19950025926 A KR 19950025926A KR 970013219 A KR970013219 A KR 970013219A
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South Korea
Prior art keywords
semiconductor device
barrier metal
metal layer
heat treatment
titanium
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KR1019950025926A
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English (en)
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KR100342826B1 (ko
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김춘환
진성곤
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김주용
현대전자산업주식회사
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Priority to KR1019950025926A priority Critical patent/KR100342826B1/ko
Publication of KR970013219A publication Critical patent/KR970013219A/ko
Application granted granted Critical
Publication of KR100342826B1 publication Critical patent/KR100342826B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 소자의 베리어 금속층 형성방법에 관한 것으로, 공정의 단순화를 이루기 위하여 티타늄을 증착한 후 N2또는 NH3가스 분위기하에서 금속 열처리공정을 실시하므로써 소자의 수율을 향상시킬 수 있도록 한 반도체 소자의 베리어 금속층 형성방법에 관한 것이다.

Description

반도체 소자의 베리어 금속층 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a 및 제1b도는 본 발명에 따른 반도체 소자의 베리어 금속층 형성방법을 설명하기 위한 소자의 단면도.

Claims (3)

  1. 반도체 소자의 베리어 금속층 형성방법에 있어서, 접합영역이 형성된 실리콘기판상에 절연층을 형성하고, 상기 접합영역이 노출되도록 상기 절연층을 패터닝하여 콘택홀을 형성시킨 상태에서, 전체 상부면에 티타늄을 증착하는 단계와, 상기 단계로부터 상기 절연층상의 상기 티타늄을 티타늄나이트라이드로 변화시키며, 상기 접합영역의 실리콘기판상에는 티타늄실리콘층이 형성되도록 1차 금속 열처리공정으로 실시하는 단계와, 상기 단계로부터 상기 티타늄실리콘층의 비저항값을 감소시키기 위하여 온도를 상승시킨 후 2차 금속 열처리공정을 실시하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 베리어 금속층 형성방법.
  2. 제1항에 있어서, 상기 제1차 금속 열처리공정은 600 내지 700℃의 저온 및 N2또는 Nh3가스 분위기 상태에서 실시되는 것을 특징으로 하는 반도체 소자의 베리어 금속층 형성방법.
  3. 제1항에 있어서, 상기 2차 금속 열처리공정은 800 내지 1000℃의 고온에서 실시되는 것을 특징으로 하는 반도체 소자의 베리어 금속층 형성방법.
KR1019950025926A 1995-08-22 1995-08-22 반도체소자의베리어금속층형성방법 KR100342826B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950025926A KR100342826B1 (ko) 1995-08-22 1995-08-22 반도체소자의베리어금속층형성방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950025926A KR100342826B1 (ko) 1995-08-22 1995-08-22 반도체소자의베리어금속층형성방법

Publications (2)

Publication Number Publication Date
KR970013219A true KR970013219A (ko) 1997-03-29
KR100342826B1 KR100342826B1 (ko) 2002-10-31

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Application Number Title Priority Date Filing Date
KR1019950025926A KR100342826B1 (ko) 1995-08-22 1995-08-22 반도체소자의베리어금속층형성방법

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Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2785482B2 (ja) * 1990-11-20 1998-08-13 日本電気株式会社 半導体装置の製造方法

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KR100342826B1 (ko) 2002-10-31

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