KR940022755A - 반도체 장치 및 그 제조방법과 반도체장치용 리드프레임(Lead frame) - Google Patents
반도체 장치 및 그 제조방법과 반도체장치용 리드프레임(Lead frame) Download PDFInfo
- Publication number
- KR940022755A KR940022755A KR1019940005376A KR19940005376A KR940022755A KR 940022755 A KR940022755 A KR 940022755A KR 1019940005376 A KR1019940005376 A KR 1019940005376A KR 19940005376 A KR19940005376 A KR 19940005376A KR 940022755 A KR940022755 A KR 940022755A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- lead
- stage
- metal film
- regions
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002184 metal Substances 0.000 claims abstract 26
- 238000007789 sealing Methods 0.000 claims abstract 12
- 239000002245 particle Substances 0.000 claims abstract 3
- 239000011521 glass Substances 0.000 claims 12
- 238000000034 method Methods 0.000 claims 3
- 239000002390 adhesive tape Substances 0.000 claims 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 2
- 230000001681 protective effect Effects 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 238000007747 plating Methods 0.000 claims 1
- 239000011347 resin Substances 0.000 claims 1
- 229920005989 resin Polymers 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 claims 1
Classifications
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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Abstract
반도체 장치가 밀봉되는 패키지를 갖는 반도체 장치는 베이스를 포함하고 금속막이 베이스의 표면에 형성된다.
반도체 칩은 금속막상에 형성된다. 반도체 칩상에 형성된 패드는 배선에 의해 그속막에 접속된다. 밀봉층은 금속막상에 형성된다. 접속층은 금속막상에 형성되어 전기적 전도성 입자를 포함한다. 접속층은 전원 시스텝용 리드와 접촉하고 금속막을 리드에 접속한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 제1실시예에 따른 반도체 장치의 단면도.
제5도는 제4도에 도시된 반도체 장치의 일부 평면도.
제6도는 제4도에 도시된 구조의 제1변형물에 따른 반도체 장치의 단면도.
Claims (58)
- 반도체장치가 밀봉되는 패키지를 갖는 반도체 장치에 있어서, 베이스, 베이스 표면에 형성된 금속막, 반도체 칩은 금속막에 형성되고 반도체 칩상에 형성된 패드는 배선에 의해 금속막에 접속되며, 금속막상에 형성된 밀봉층, 유리층상에 형성된 리드, 및 금속막상에 형성되어 전기적 전도성 입자를 포함하고, 전원시스템용 리드와 접촉하여 상기 리드에 금속막을 접속하는 접속층으로 구성되는 반도체 장치.
- 제1항에 있어서, 밀봉층의 상부 표면이 접속층의 상부표면과 대략 동일한 레벨에서 위치되는 반도체 장치.
- 제1항에 있어서, 상기 전원시스템용 리드가 밀봉층 상부보다 낮은 레벨에서 위치된 구부러진 단부를 갖고 접속층이 상기 리드의 구부러진 단부와 접촉하여 있는 반도체 장치.
- 제1항에 있어서, 상기 베이스는 접속층이 금속막을 거쳐 위치되는 돌출부를 갖는 반도체 장치.
- 제1항에 있어서, 전원시스템용 리드가 접속층과 접촉하는 단부를 갖고, 상기 단부가 접속층과 접착을 용이하게 하는 조면을 갖는 반도체 장치.
- 제1항에 있어서, 전원시스템용 리드가 접속층과 접촉하는 단부를 갖고, 상기간부가 접속층과 접착을 용이하게 하는 다수의 딤플을 갖는 반도체 장치.
- 제1항에 있어서, 전원시스템용 리드가 접속층과 접촉하는 단부를 갖고, 상기 단부가 접속층과 접착을 용이하게 하는 다수의 통공을 갖는 반도체 장치.
- 제1항에 있어서, 접속층이 전기적 전도성입자를 포함하는 내화성유리층으로 구성되는 반도체 장치.
- 제1항에 있어서, 베이스가 세라믹물질로 구성되는 반도체 장치.
- 반도체 장치가 밀봉되는 패키지를 갖는 반도체 장치에 있어서, 베이스, 베이스 표면에 형성된 금속막, 상기 금속막은 다수의 분리된 영역을 갖고 반도체 칩은 다수의 분리된 영역중 한 영역에 형성되고, 금속막상에 형성된 밀봉층, 유리층상에 형성된 리드, 및 반도체 칩상에 형성된 패드를 리드와 다수의 분리된 영역에 접속하고 리드를 다수의 분리된 영역에 접촉하는 배선으로 접속층으로 구성되는 반도체 장치.
- 제10항에 있어서, 다수의 분리된 영역이 전원선과 접지선으로 구성되는 전원시스템을 형성하는 반도체 장치.
- 제10항에 있어서, 반도체 칩상에 형성된 패드중의 하나와 리드 또는 분리된 영역중 하나가 다수의 배선 또는 상기 다수의 배선의 직경의 합과 대략같은 직경을 갖는 단일 배선에 의해 접속되며, 분리된 영역중 하나와 리드중 하나가 다수의 배선 또는 상기 다수의 배선의 직경의 합과 대략 같은 직경을 갖는 단일 배선에 의해 접속되는 반도체 장치.
- 제10항에 있어서, 리드가 밀봉층과 접촉하는 첫 번째 부분과 배선이 접속되는 두 번째 부분에 형성된 금속막으로 구성되는 반도체 장치.
- 제10항에 있어서, 유리층이 밀봉층에서 분리되고 개구가 유리층과 밀봉층사이에 형성되도록 금속막상에 형성된 유리층과 상기 개구를 통하여 연장되는 금속막의 분리된 영역과 리드를 접속하는 배선으로 더 구성되는 반도체 장치.
- 제10항에 있어서, 상기 리드가 전원시스템 리드와 신호시스템 리드로 구성되고 전원 시스템 리드가 신호시스템 리드보다 넓고 짧은 반도체 장치.
- 제10항에 있어서, 금속막의 분리된 영역의 제1영역이 금속막의 분리된 영역의 제2영역에 의해 둘러싸여지도록 형성되는 반도체 장치.
- 제16항에 있어서, 상기 분리된 영역의 제1영역이 전원시스템의 제1전위를 갖고 상기 분리된 영역의 제2영역이 제2전위를 갖는 반도체 장치.
- 제10항에 있어서, 반도체 칩이 설치되는 금속막의 상기 분리된 영역 중 한 영역을 제외한 다수의 영역이 상기 분리된 영역중 한 영역을 둘러싸도록 위치되는 반도체 장치.
- 제10항에 있어서, 배선이 반도체 칩상에 형성된 패드를 신호 시스템 리드에 접속하기 위한 제1배선과 금속막의 분리된 영역을 반도체 칩 상에 형성된 패드에 접속하기 위한 제2배선으로 구성되며, 상기 제2배선이 제1배선보다 짧은 반도체 장치.
- 제10항에 있어서, 리드가 신호 시스템 리드와 전원 시스템 리드로 구성되고, 반도체 장치가 금속막상에 형성된 유리층으로 구성되며, 신호 시스템리드의 단부가 유리층상에 설치되는 반도체 장치.
- 제20항에 있어서, 상기 유리층이 다수의 분리된 영역으로 구성되는 반도체 장치.
- 제10항에 있어서, 리드가 신호 시스템 리드와 전원시스템 리드로 구성되고, 반도체 장치가 금속막상에 형성된 결정질 내화성 유리층으로 구성되고, 신호 시스템 리드의 단부가 결정질 내화성 유리층상에 설치되며, 밀봉층이 비정질 내화성 유리층으로 구성되는 반도체 장치.
- 제10항에 있어서, 베이스가 리세스부로 구성되며, 금속막이 리세스부와 베이스의 상부의 바닥면에 형성되는 반도체 장치.
- 제10항에 있어서, 베이스가 적어도 한 단계 부분을 갖는 리세스부로 구성되며, 금속막이 리세스부, 상기 적어도 한 단계 부분, 및 베이스의 상부의 바닥면에 형성되는 반도체 장치.
- 제10항에 있어서, 밀봉층에 접속된 캡으로 더 구성되는 반도체 장치.
- 제25항에 있어서, 반도체 장치를 인해 인쇄 회로판에 설치할 때 베이스가 인쇄 회로판에 접하도록 리드가 구부려진 부분으로 구성되는 반도체 장치.
- 제25항에 있어서, 반도체 장치를 인쇄회로판에 설치할 때 캡이 인쇄회로판에 접하도록 리드가 구부려진 부분으로 구성되는 반도체 장치.
- 제10항에 있어서, 베이스가 세라믹 물질로 구성되는 반도체 장치.
- 제27항에 있어서, 금속부재가 형성되는 표면에 반대쪽 베이스의 표면에 설치된 열 방사부재로 더 구성되는 반도체 장치.
- 반도체 장치가 밀봉되는 패키지를 갖는 반도체 장치에 있어서, 다수의 분리된 영역을 갖는 스테이지, 반도체 칩이 다수의 분리된 영역중 한 영역에 형성되고, 분리된 영역이 패키지의 수지에 의해 지지되고, 반도체 칩이 설치되는 스테이지의 표면에 반대쪽 스테이지의 배면이 패키지로부터 노광되고, 스테이지가 전기적 전도성 물질을 포함하며, 패키지로부터 연장되는 리드, 및 반도체 칩상에 형성된 패드를 리드와 분리된 영역에 접속하는 배선으로 구성되는 반도체 장치.
- 제30항에 있어서, 분리된 영역이 동심적으로 배열되는 반도체 장치.
- 제30항에 있어서, 스테이지와 리드가 일체로 형성된 리드 프레임의 부분인 반도체 장치.
- 제30항에 있어서, 반도체 칩이 설치되는 분리된 영역 중 한 영역과 다른 분리된 영역중 적어도 한 영역이 다수의 분리된 영역으로 구성되는 반도체 장치.
- 제30항에 있어서, 리드가 스테이지를 겹치는 단부를 갖는 리드로 구성되는 반도체 장치.
- 제34항에 있어서, 스테이지상에 형성되고 상기 리드의 단부를 지지하는 절연 접착테이프로 더 구성되는 반도체 장치.
- 제30항에 있어서, 리드가 스테이지를 겹치고 스테이지와 직접 접촉하는 단부를 갖는 리드로 구성되는 반도체 장치.
- 제30항에 있어서, 스테이지의 분리된 영역에 리드를 접속하는 배선으로 더 구성되는 반도체 장치.
- 제30항에 있어서, 반도체 칩이 설치되는 분리된 영역 중 한 영역이 다수의 분리된 영역으로 구성되는 반도체 장치.
- 제30항에 있어서, 리드의 배면에 형성되고, 반도체 장치를 인쇄회로판에 설치할 때 인쇄회로판에 형성된 패턴에 전기적으로 접속되는 전극으로 더 구성되는 반도체 장치.
- 제39항에 있어서, 전극이 땜납범프로 구성되는 반도체 장치.
- 제30항에 있어서, 반도체 장치를 인쇄회로판상에 설치할 때 스테이지의 배면이 인쇄회로판에 접하도록 리드가 구부려진 부분으로 구성되는 반도체 장치.
- 제30항에 있어서, 반도체 장치를 인쇄회로판상에 설치할 때 스테이지의 배면이 위로 접하도록 리드가 구부려진 부분으로 구성되는 반도체 장치.
- 제42항에 있어서, 스테이지의 배면에 설치된 옆방사부재로 더 구성되는 반도체 장치.
- 제30항에 있어서, 스테이지의 분리된 영역이 접지를 포함하는 전원시스템에 사용되는 반도체 장치.
- 제30항에 있어서, 상기 패키지가 플라스틱 패키지로 구성되는 반도체 장치.
- 제30항에 있어서, 리드가 보호막으로 도포된 외부리드부로 구성되는 반도체 장치.
- 반도체 칩이 설치되는 표면을 갖는 스테이지, 내부 리드부와 외부 리드부를 갖는 리드, 상기 스테이지는 스테이지의 상기 표면에 형성된 홈을 가지며, 홈은 리드 프레임이 패키지된 반도체 장치에 제공되는 상태에서 서로 분할된 영역으로 스테이지를 규정하는 패키지된 반도체 장치용 리드 프레임.
- 제47항에 있어서, 스테이지와 리드가 리드 프레임의 일체로 형성된 부분인 리드 프레임.
- 제47항에 있어서, 리드가 스테이지를 겹치는 단부를 갖는 리드 프레임.
- 제47항에 있어서, 반도체 칩이 설치되는 스테이지의 영역중 한 영역과 다른 스테이지의 영역중 적어도 한 영역이 패키지된 반도체 장치에 리드 프레임을 제공하는 상태에서 분할된 영역으로 스테이지의 영역중 상기 적어도 한 영역을 분할하는 제2홈을 갖는 리드 프레임.
- 제47항에 있어서, 리드가 스테이지를 겹치는단부를 갖고 절연 접착 테이프에 의해 단부에 고정되는 리드 프레임.
- 제49항에 있어서, 스테이지를 겹치는 리드의 단부가 스테이지와 직접 접촉하는 리드 프레임.
- 제47항에 있어서, 외부 리드부가 보호막으로 도포되는 리드 프레임.
- 제47항에 있어서, 반도체 칩이 스테이지의 영역중 한 영역에 설치되고, 스테이지의 영역중 상기 한 영역이 반도체 칩을 설치하는 표면에 제2홈을 가지며, 상기 제2홈이 패키지된 반도체 장치에 리드프레임을 제공하는 상태에서 서로 분리된 영역으로 스테이지의 영역중 상기 한 영역을 분할하는 리드 프레임.
- (a) 리드 프레임의 스테이지의 제1표면에 반도체 칩을 설치하고, 상기 스테이지는 스테이지의 제1표면에 형성된 홈을 가지고, (b) 반도체 칩, 스테이지와 리드사이에 전기적 접속을 행하고, (c) 반도체 칩을 밀봉하는 패키지를 형성하고, (d) 패키지의 표면을 제거하고, 제1표면에 반대쪽 스테이지의 제2표면이 나타나게 하여 스테이지의 영역을 서로 분리하는 단계로 구성되는 반도체 장치의 제조방법.
- 제55항에 있어서, 리드의 외부리드부를 금속막으로 도금하는 단계(e)로 더 구성되는 방법.
- 제55항에 있어서, 스테이지의 제2표면에 범프전극을 형성하는 단계(e)로 더 구성되는 방법.
- 제55항에 있어서, 스테이지의 제2표면에 열방사 부재를 부착하는 단계(e)로 더 구성되는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP93-56252 | 1993-03-17 | ||
JP5056252A JPH06268091A (ja) | 1993-03-17 | 1993-03-17 | 半導体装置 |
JP5057527A JPH06275761A (ja) | 1993-03-17 | 1993-03-17 | 半導体装置 |
JP94-20642 | 1994-02-17 | ||
JP6020642A JPH07231069A (ja) | 1994-02-17 | 1994-02-17 | 半導体装置及びその製造方法及びこれに使用されるリードフレーム |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940022755A true KR940022755A (ko) | 1994-10-21 |
KR0119464B1 KR0119464B1 (en) | 1997-10-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR19940005376A KR0119464B1 (en) | 1993-03-17 | 1994-03-17 | Semiconductor device and lead frame |
Country Status (2)
Country | Link |
---|---|
US (2) | US5497032A (ko) |
KR (1) | KR0119464B1 (ko) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5677566A (en) * | 1995-05-08 | 1997-10-14 | Micron Technology, Inc. | Semiconductor chip package |
JPH08316364A (ja) * | 1995-05-16 | 1996-11-29 | Toshiba Corp | 半導体装置 |
KR0177744B1 (ko) * | 1995-08-14 | 1999-03-20 | 김광호 | 전기적 특성이 향상된 반도체 장치 |
JP2842355B2 (ja) * | 1996-02-01 | 1999-01-06 | 日本電気株式会社 | パッケージ |
US5847458A (en) * | 1996-05-21 | 1998-12-08 | Shinko Electric Industries Co., Ltd. | Semiconductor package and device having heads coupled with insulating material |
WO1997045868A1 (en) * | 1996-05-27 | 1997-12-04 | Dai Nippon Printing Co., Ltd. | Circuit member for semiconductor device, semiconductor device using the same, and method for manufacturing them |
JPH1065085A (ja) * | 1996-06-28 | 1998-03-06 | Siemens Ag | パワーパッケージ内で使用するためのリードフレーム |
US5907184A (en) | 1998-03-25 | 1999-05-25 | Micron Technology, Inc. | Integrated circuit package electrical enhancement |
US5763945A (en) * | 1996-09-13 | 1998-06-09 | Micron Technology, Inc. | Integrated circuit package electrical enhancement with improved lead frame design |
US6068174A (en) | 1996-12-13 | 2000-05-30 | Micro)N Technology, Inc. | Device and method for clamping and wire-bonding the leads of a lead frame one set at a time |
DE19703639A1 (de) * | 1997-01-31 | 1998-08-06 | Bosch Gmbh Robert | Verfahren zur Herstellung von Bonddrahtverbindungen |
KR100230515B1 (ko) * | 1997-04-04 | 1999-11-15 | 윤종용 | 요철이 형성된 리드 프레임의 제조방법 |
DE69839597D1 (de) * | 1998-01-13 | 2008-07-24 | Lucent Technologies Inc | Hochfrequenzhalbleiteranordnung |
US6335225B1 (en) * | 1998-02-20 | 2002-01-01 | Micron Technology, Inc. | High density direct connect LOC assembly |
US6274927B1 (en) * | 1999-06-03 | 2001-08-14 | Amkor Technology, Inc. | Plastic package for an optical integrated circuit device and method of making |
US6198163B1 (en) * | 1999-10-18 | 2001-03-06 | Amkor Technology, Inc. | Thin leadframe-type semiconductor package having heat sink with recess and exposed surface |
JP2001358276A (ja) * | 2000-06-12 | 2001-12-26 | Mitsui High Tec Inc | 半導体装置およびリードフレーム |
JP4417541B2 (ja) * | 2000-10-23 | 2010-02-17 | ローム株式会社 | 半導体装置およびその製造方法 |
US6661083B2 (en) | 2001-02-27 | 2003-12-09 | Chippac, Inc | Plastic semiconductor package |
DE10124970B4 (de) * | 2001-05-21 | 2007-02-22 | Infineon Technologies Ag | Elektronisches Bauteil mit einem Halbleiterchip auf einer Halbleiterchip-Anschlußplatte, Systemträger und Verfahren zu deren Herstellung |
US6861720B1 (en) | 2001-08-29 | 2005-03-01 | Amkor Technology, Inc. | Placement template and method for placing optical dies |
US6396130B1 (en) | 2001-09-14 | 2002-05-28 | Amkor Technology, Inc. | Semiconductor package having multiple dies with independently biased back surfaces |
US6908843B2 (en) * | 2001-12-28 | 2005-06-21 | Texas Instruments Incorporated | Method and system of wire bonding using interposer pads |
US6784534B1 (en) | 2002-02-06 | 2004-08-31 | Amkor Technology, Inc. | Thin integrated circuit package having an optically transparent window |
DE10205563B4 (de) * | 2002-02-11 | 2009-06-10 | Advanced Micro Devices, Inc., Sunnyvale | Gehäustes Halbleiterbauelement mit zwei Die-Paddles sowie zugehöriges Herstellungsverfahren |
US6734044B1 (en) * | 2002-06-10 | 2004-05-11 | Asat Ltd. | Multiple leadframe laminated IC package |
US7067905B2 (en) * | 2002-08-08 | 2006-06-27 | Micron Technology, Inc. | Packaged microelectronic devices including first and second casings |
JP2005191147A (ja) * | 2003-12-24 | 2005-07-14 | Sanyo Electric Co Ltd | 混成集積回路装置の製造方法 |
JP2005191342A (ja) * | 2003-12-26 | 2005-07-14 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7323765B2 (en) * | 2004-10-13 | 2008-01-29 | Atmel Corporation | Die attach paddle for mounting integrated circuit die |
US7582951B2 (en) * | 2005-10-20 | 2009-09-01 | Broadcom Corporation | Methods and apparatus for improved thermal performance and electromagnetic interference (EMI) shielding in leadframe integrated circuit (IC) packages |
US7714453B2 (en) * | 2006-05-12 | 2010-05-11 | Broadcom Corporation | Interconnect structure and formation for package stacking of molded plastic area array package |
US8183680B2 (en) * | 2006-05-16 | 2012-05-22 | Broadcom Corporation | No-lead IC packages having integrated heat spreader for electromagnetic interference (EMI) shielding and thermal enhancement |
US7808087B2 (en) | 2006-06-01 | 2010-10-05 | Broadcom Corporation | Leadframe IC packages having top and bottom integrated heat spreaders |
US8581381B2 (en) | 2006-06-20 | 2013-11-12 | Broadcom Corporation | Integrated circuit (IC) package stacking and IC packages formed by same |
TWI310979B (en) * | 2006-07-11 | 2009-06-11 | Chipmos Technologies Shanghai Ltd | Chip package and manufacturing method threrof |
KR20080065153A (ko) * | 2007-01-08 | 2008-07-11 | 페어차일드코리아반도체 주식회사 | 메탈 태브 다이 접착 패들(dap)을 구비한 파워소자패키지 및 그 패키지 제조방법 |
US8183687B2 (en) * | 2007-02-16 | 2012-05-22 | Broadcom Corporation | Interposer for die stacking in semiconductor packages and the method of making the same |
CN100539054C (zh) * | 2007-03-13 | 2009-09-09 | 百慕达南茂科技股份有限公司 | 芯片封装结构及其制作方法 |
US7872335B2 (en) * | 2007-06-08 | 2011-01-18 | Broadcom Corporation | Lead frame-BGA package with enhanced thermal performance and I/O counts |
US8120152B2 (en) | 2008-03-14 | 2012-02-21 | Advanced Semiconductor Engineering, Inc. | Advanced quad flat no lead chip package having marking and corner lead features and manufacturing methods thereof |
US20100044850A1 (en) * | 2008-08-21 | 2010-02-25 | Advanced Semiconductor Engineering, Inc. | Advanced quad flat non-leaded package structure and manufacturing method thereof |
US8124447B2 (en) | 2009-04-10 | 2012-02-28 | Advanced Semiconductor Engineering, Inc. | Manufacturing method of advanced quad flat non-leaded package |
US8786063B2 (en) * | 2009-05-15 | 2014-07-22 | Stats Chippac Ltd. | Integrated circuit packaging system with leads and transposer and method of manufacture thereof |
JP5278166B2 (ja) * | 2009-05-28 | 2013-09-04 | セイコーエプソン株式会社 | 電子デバイスの製造方法及び電子デバイス |
JP5574667B2 (ja) * | 2009-10-21 | 2014-08-20 | キヤノン株式会社 | パッケージ、半導体装置、それらの製造方法及び機器 |
US8203201B2 (en) * | 2010-03-26 | 2012-06-19 | Stats Chippac Ltd. | Integrated circuit packaging system with leads and method of manufacture thereof |
US8138595B2 (en) * | 2010-03-26 | 2012-03-20 | Stats Chippac Ltd. | Integrated circuit packaging system with an intermediate pad and method of manufacture thereof |
JP4929382B2 (ja) * | 2010-07-13 | 2012-05-09 | 株式会社東芝 | 電子部品構造体及び電子機器 |
TWI453831B (zh) | 2010-09-09 | 2014-09-21 | 台灣捷康綜合有限公司 | 半導體封裝結構及其製造方法 |
EP2628183A4 (en) | 2010-10-12 | 2014-04-02 | Alliance Sustainable Energy | III-V BAND WEAPONS IMPORTANT FOR OPTOELECTRONIC COMPONENTS OF HIGH EFFICIENCY |
KR20120048875A (ko) * | 2010-11-08 | 2012-05-16 | 삼성전자주식회사 | 노출 패들을 갖는 쿼드 플랫 패키지 |
US9349628B2 (en) * | 2013-02-25 | 2016-05-24 | Advanced Micro Devices, Inc. | Method and an alignment plate for engaging a stiffener frame and a circuit board |
US9966330B2 (en) | 2013-03-14 | 2018-05-08 | Vishay-Siliconix | Stack die package |
US9589929B2 (en) | 2013-03-14 | 2017-03-07 | Vishay-Siliconix | Method for fabricating stack die package |
US9728510B2 (en) | 2015-04-10 | 2017-08-08 | Analog Devices, Inc. | Cavity package with composite substrate |
WO2017217328A1 (ja) | 2016-06-14 | 2017-12-21 | 三菱電機株式会社 | 半導体装置 |
US11145574B2 (en) | 2018-10-30 | 2021-10-12 | Microchip Technology Incorporated | Semiconductor device packages with electrical routing improvements and related methods |
WO2024041759A1 (en) * | 2022-08-24 | 2024-02-29 | Microchip Technology Caldicot Limited | Electronic device package including a gel |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58100447A (ja) * | 1981-12-11 | 1983-06-15 | Hitachi Ltd | 樹脂封止型半導体装置およびその製造方法 |
JP2582013B2 (ja) * | 1991-02-08 | 1997-02-19 | 株式会社東芝 | 樹脂封止型半導体装置及びその製造方法 |
FR2524707B1 (fr) * | 1982-04-01 | 1985-05-31 | Cit Alcatel | Procede d'encapsulation de composants semi-conducteurs, et composants encapsules obtenus |
JPS62276863A (ja) * | 1986-05-26 | 1987-12-01 | Hitachi Ltd | 電子装置 |
US4884124A (en) * | 1986-08-19 | 1989-11-28 | Mitsubishi Denki Kabushiki Kaisha | Resin-encapsulated semiconductor device |
JPS6352445A (ja) * | 1986-08-22 | 1988-03-05 | Hitachi Ltd | 半導体装置 |
JPS63293931A (ja) * | 1987-05-27 | 1988-11-30 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPH01251748A (ja) * | 1988-03-31 | 1989-10-06 | Toppan Printing Co Ltd | 半導体装置用リードフレーム |
US5032543A (en) * | 1988-06-17 | 1991-07-16 | Massachusetts Institute Of Technology | Coplanar packaging techniques for multichip circuits |
JP2602076B2 (ja) * | 1988-09-08 | 1997-04-23 | 三菱電機株式会社 | 半導体装置用リードフレーム |
JPH0732215B2 (ja) * | 1988-10-25 | 1995-04-10 | 三菱電機株式会社 | 半導体装置 |
US5175060A (en) * | 1989-07-01 | 1992-12-29 | Ibiden Co., Ltd. | Leadframe semiconductor-mounting substrate having a roughened adhesive conductor circuit substrate and method of producing the same |
US5200362A (en) * | 1989-09-06 | 1993-04-06 | Motorola, Inc. | Method of attaching conductive traces to an encapsulated semiconductor die using a removable transfer film |
US5139973A (en) * | 1990-12-17 | 1992-08-18 | Allegro Microsystems, Inc. | Method for making a semiconductor package with the distance between a lead frame die pad and heat spreader determined by the thickness of an intermediary insulating sheet |
US5172214A (en) * | 1991-02-06 | 1992-12-15 | Motorola, Inc. | Leadless semiconductor device and method for making the same |
-
1994
- 1994-03-16 US US08/213,720 patent/US5497032A/en not_active Expired - Fee Related
- 1994-03-17 KR KR19940005376A patent/KR0119464B1/ko not_active IP Right Cessation
-
1995
- 1995-11-21 US US08/561,421 patent/US5804468A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5497032A (en) | 1996-03-05 |
US5804468A (en) | 1998-09-08 |
KR0119464B1 (en) | 1997-10-27 |
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