KR940011990A - 티에프티 엘씨디(tft-lcd)용 신호선 제조방법 및 구조 - Google Patents

티에프티 엘씨디(tft-lcd)용 신호선 제조방법 및 구조 Download PDF

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KR940011990A
KR940011990A KR1019920020859A KR920020859A KR940011990A KR 940011990 A KR940011990 A KR 940011990A KR 1019920020859 A KR1019920020859 A KR 1019920020859A KR 920020859 A KR920020859 A KR 920020859A KR 940011990 A KR940011990 A KR 940011990A
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South Korea
Prior art keywords
metal
signal line
tft
lcd
width
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KR1019920020859A
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English (en)
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KR950010661B1 (ko
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안병철
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이헌조
주식회사 금성사
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Priority to KR1019920020859A priority Critical patent/KR950010661B1/ko
Priority to US08/145,772 priority patent/US5467882A/en
Priority to TW082109076A priority patent/TW246721B/zh
Priority to JP5274498A priority patent/JPH06235927A/ja
Priority to DE4337849A priority patent/DE4337849C2/de
Priority to FR9313197A priority patent/FR2697923B1/fr
Priority to CN93114476A priority patent/CN1040914C/zh
Publication of KR940011990A publication Critical patent/KR940011990A/ko
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Publication of KR950010661B1 publication Critical patent/KR950010661B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본발명은 TFT-LCD 신호선에 관한 것으로 신호선의 저항을 감소시키고 수율을 향상시키며 누설전류를 방지하기 위한 TFT-LCD 신호선의 제조방법 및 구조에 관한 것이다.
종래에는 신호선이 제1,제2,제3금속이 적층되어 이루어졌으나 공정시 제2금속의 측면이 식각되어지고, 신호선위의 절연막 형성시 제2금속이 산화되어 TFT의 게이트 전극과 소오스/드레인 전극간의 전류 누설 및 단락되는 문제가 발생한다.
반면 본 발명은, 제1,제2,제3금속이 적층되어 신호선이 구성되나 제2금속을 제1금속과 제3금속이 감싸도록 형성하고 제1금속과 제3금속을 양극 산화하여 절연막을 형성하였다.
따라서, 신호선의 저항이 감소되고 누설전류를 방지하며 수율을 향상시킬수 있다.

Description

티에프티 엘씨디(TFT-LCD)용 신호선 제조방법 및 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본 발명의 TFT-LCD 구조 단면도,
제5도는 본 발명의 TFT-LCD 공정 단면도,
제6도는 본 발명의 TFT-LCD 패드(PAD)부분 공정 단면도,
제7도는 본 발명의 패드구조에 반도체 소자의 칩을 접속시킬 경우의 구조단면도.

Claims (7)

  1. 유기기판(1)에 제1금속(2)과 제2금속(3)을 차례로 형성하는 제1공정과, 제2금속(3)의 폭(W1)을 정의한후 제2금속을 습식 식각하는 제2공정과, 전면에 제3금속(4)을 증착하고 신호선의 폭(W2)을 정의하여 상기 제1금속(2)과 제3금속(4)의 불필요한 부분을 제거하는 제3공정으로 이루어지는 TFT-LCD 신호선 제조방법.
  2. 제1항에 있어서, 상기 제1금속(2)과 제3금속(4)을 양극 산화하여 제1절연막(5a)을 형성하는 제4공정을 포함함을 특징으로 하는 TFT-LCD 신호선 제조방법.
  3. 제1항에 있어서, 제1금속과 제3금속은 탄탈(Ta) 또는 니오븀(Nb)중 하나를 선택하여 형성함을 특징으로 하는 TFT-LCD 신호선 제조방법.
  4. 제1항에 있어서, 제2금속(3)을 구리(Cu)로 형성함을 특징으로 하는 TFT-LCD 신호선 제조방법.
  5. 제1항에 있어서, 신호선의 폭(W2)은 제2금속(3)의 폭(W1)보다 적어도 1㎛더 크도록 형성함을 특징으로 하는 TFT-LCD 신호선 제조방법.
  6. 절연기판(1)과, 절연기판위에 형성되고 절연기판(1)과 접착력이 좋은 제1금속(2)과, 제1금속위에 형성되고 저항이 낮은 제2금속(3)과, 제2금속(3)을 제1금속(2)과 더불어 감싸도록 형성되고 제1금속(2)과 같은 물질로 구성된 제3금속(4)과, 제1금속(2)과 제3금속(4)을 양극 산화하여 형성되는 제1절연막(5a)으로 구성됨을 특징으로 하는 TFT-LCD 신호선 구조.
  7. 제6항에 있어서, 신호선중 주변회로의 접속되는 패드 신호선은 제2금속(3)의 일부가 노출되어 주변회로와 직접 부착할 수 있도록 구성됨을 특징으로 하는 TFT-LCD 신호선 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920020859A 1992-11-07 1992-11-07 티에프티 엘씨디(tft-lcd)용 신호선 제조방법 및 구조 KR950010661B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019920020859A KR950010661B1 (ko) 1992-11-07 1992-11-07 티에프티 엘씨디(tft-lcd)용 신호선 제조방법 및 구조
US08/145,772 US5467882A (en) 1992-11-07 1993-10-29 Signal line structure for a TFT-LCD and method for fabricating the same
TW082109076A TW246721B (ko) 1992-11-07 1993-10-30
JP5274498A JPH06235927A (ja) 1992-11-07 1993-11-02 Ｔｆｔ−ｌｃｄ用信号線の製造方法及びその構造
DE4337849A DE4337849C2 (de) 1992-11-07 1993-11-05 Signalleitungsstruktur für eine Dünnfilmtransistor-Flüssigkristallanzeige und Verfahren zur Herstellung derselben
FR9313197A FR2697923B1 (fr) 1992-11-07 1993-11-05 Structure de ligne de signaux pour un affichage a cristaux liquides a transistor a couches minces et procede pour sa fabrication.
CN93114476A CN1040914C (zh) 1992-11-07 1993-11-06 薄膜晶体管液晶显示器用的信号线装置及其制造的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920020859A KR950010661B1 (ko) 1992-11-07 1992-11-07 티에프티 엘씨디(tft-lcd)용 신호선 제조방법 및 구조

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KR940011990A true KR940011990A (ko) 1994-06-22
KR950010661B1 KR950010661B1 (ko) 1995-09-21

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US (1) US5467882A (ko)
JP (1) JPH06235927A (ko)
KR (1) KR950010661B1 (ko)
CN (1) CN1040914C (ko)
DE (1) DE4337849C2 (ko)
FR (1) FR2697923B1 (ko)
TW (1) TW246721B (ko)

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TWI354350B (en) * 2005-05-25 2011-12-11 Au Optronics Corp Copper gate electrode and fabricating method there
CN101819961B (zh) * 2009-02-27 2015-04-29 北京京东方光电科技有限公司 液晶显示器的阵列基板、信号线及其制造方法
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CN109100893B (zh) * 2018-06-29 2021-11-09 武汉华星光电技术有限公司 显示面板及其制备方法、阵列基板
CN110223990B (zh) * 2019-06-18 2022-03-08 京东方科技集团股份有限公司 顶栅结构及其制备方法、阵列基板、显示设备

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Also Published As

Publication number Publication date
FR2697923A1 (fr) 1994-05-13
US5467882A (en) 1995-11-21
TW246721B (ko) 1995-05-01
CN1040914C (zh) 1998-11-25
DE4337849C2 (de) 1996-08-08
FR2697923B1 (fr) 1995-08-18
DE4337849A1 (de) 1994-05-11
JPH06235927A (ja) 1994-08-23
KR950010661B1 (ko) 1995-09-21
CN1088315A (zh) 1994-06-22

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