KR920013780A - 고전압 용도에 적합한 직접 회로 장치 - Google Patents

고전압 용도에 적합한 직접 회로 장치 Download PDF

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KR920013780A
KR920013780A KR1019910022656A KR910022656A KR920013780A KR 920013780 A KR920013780 A KR 920013780A KR 1019910022656 A KR1019910022656 A KR 1019910022656A KR 910022656 A KR910022656 A KR 910022656A KR 920013780 A KR920013780 A KR 920013780A
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integrated circuit
circuit device
diffusion region
substrate
voltage
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아놀드 에밀
엘 머찬트 스티븐
더블유. 샤클 피터
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프레데릭 얀 스미트
엔. 브이. 필립스 글로아이람펜파브리켄
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material

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Abstract

내용 없음

Description

고전압 용도에 적합한 집적 회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 기판내에서 확산된 접점 영역, 고전압 상호접속 버스 및 소스 플로워 장치를 포함하는 고전압 실리콘-온-절연체(silicon-on insulator) 집적 회로의 일부를 도시하는 단면도. 제2도는 고전압 다이오드, 소스 플로워모드에서 동작하는 다이오드 및 고전압 상호 접속 버스를 포함하는 일부의 실리콘-온-절연체 회로의 평면도, 제3도는 소스 플로워 회로내에서 두개의 가로 방향으로 2중 확산된 금속-산화물-반도체-실리콘-온-절연체(LDMOSSOI) 트랜지스터를 포함하는 브릿지 회로의 구조를 도시하는 단면도

Claims (6)

  1. 개선된 전압 항복 특성을 나타내며, 고전압 용도에 특히 적합한 집적 회로 장치로서, 제1전도도 형태의 약1000Ω-㎝보다 큰 비저항을 가지는 반도체 기판과; 상기 기판상에 제공된 절연층과; 상기 절연 층상에 제공된 반도체 층과; 상기 반도체 층내에 제공된 서브회로 부분을 형성하는 다수의 가로방향으로 분리된 회로 요소와; 상기 기판내에 제공되고 가로면방향으로 상기 회로 요소와 분리된 상기 제1전도도 형태와 반대인 제2전도도 형태의 확산 영역과; 상기 집적 회로 장치내 어떠한 서브 회로의 최고 전위의 전압과 적어도 같은 전압으로 상기 확산 영역을 접촉시키고 유지시키는 수단을 포함하는 집적 회로 장치.
  2. 제1항에 있어서, 단일의 확산 영역이 다수의 회로 성분을 위해 제공되는 집적 회로 장치.
  3. 개선된 전압 항복 특성을 나타내며, 고전압 용도에 특히 적합한 집적 회로 장치로서, 제1전도도 형태의 큰비저항을 가지는 반도체 기판과; 상기 기판상에 제공된 절연층과, 상기 절연 층 상에 제공된 상기 제1전도도 형태와 반대인 제2전도도 형태의 반도체 층과; 상기 반도체 층내에 제공된 서브회로 부분을 형성하는 다수의 회로요소와; 상기 반도체층내에 제공되고 가로방향으로 상기 회로요소와 분리되며, 상기 회로 요소위에 놓여 있지 않은 제2전도도 형태의 확산 영역과; 상기 집적 회로 장치내 어떠한 서브회로의 최고 전위의 전압과 적어도 같은 전압으로 상기 확산 영역을 유지시키는 수단을 포함하는 접적회로 장치.
  4. 개선된 전압 항복 특성을 나타내는 반도체-온-절연체 가로방향MOS트랜지스터 소스 플로워 브릿지 구조를 가지며, 고전압 용도에 특히 적합한 집적 회로 장치로서, 제1전도도 형태의 반도체 기판과;상기 기판상에 제공된 절연층과; 상기 절연 층상에 제공된 반도체 층과; 상기 반도체 층내에 제공된 상기 트랜지스터의 드레인,게이트,소스 및 상호 접속부분들과; 상기 기판내에 제공되고, 상기 제1전도도 형태와 반대인 제2전도도 형태를 가지며, 상기 드레인, 게이트 및 소스부분들과 가로 방향으로 분리된 확산 영역과; 상기 드레인 또는 소스 부분들의 최고 전위와 적어도 동일한 전압으로 상기 확산 영역을 유지시키는 수단을 포함하는 집적 회로 장치.
  5. 제1항, 제2항, 제3항 또는 제4항 중의 어느 한 항에 있어서, 상기 기판은 P형 실리콘 기판이고, 상기 절연층은 산화 실리콘 층이며 상기 반도체 층은 실질적으로 n형의 단결정 실리콘층인 집적 회로 장치.
  6. 제5항에 있어서, 상기 확산 영역은 상기 집적 회로 장치내 어떠한 서브 회로의 최고 전위보다 높은 전압으로 유지되는 집적 회로 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910022656A 1990-12-14 1991-12-11 집적회로 장치 KR100257412B1 (ko)

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US07/628,307 US5113236A (en) 1990-12-14 1990-12-14 Integrated circuit device particularly adapted for high voltage applications
US628,307 1990-12-14

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KR100257412B1 (ko) 2000-05-15
EP0490437B1 (en) 1998-06-17
JP3423006B2 (ja) 2003-07-07
US5113236A (en) 1992-05-12
EP0490437A1 (en) 1992-06-17
JPH04275450A (ja) 1992-10-01
DE69129617D1 (de) 1998-07-23
DE69129617T2 (de) 1999-01-28

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