KR920013780A - 고전압 용도에 적합한 직접 회로 장치 - Google Patents
고전압 용도에 적합한 직접 회로 장치 Download PDFInfo
- Publication number
- KR920013780A KR920013780A KR1019910022656A KR910022656A KR920013780A KR 920013780 A KR920013780 A KR 920013780A KR 1019910022656 A KR1019910022656 A KR 1019910022656A KR 910022656 A KR910022656 A KR 910022656A KR 920013780 A KR920013780 A KR 920013780A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- circuit device
- diffusion region
- substrate
- voltage
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000009792 diffusion process Methods 0.000 claims 9
- 230000015556 catabolic process Effects 0.000 claims 3
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76267—Vertical isolation by silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 기판내에서 확산된 접점 영역, 고전압 상호접속 버스 및 소스 플로워 장치를 포함하는 고전압 실리콘-온-절연체(silicon-on insulator) 집적 회로의 일부를 도시하는 단면도. 제2도는 고전압 다이오드, 소스 플로워모드에서 동작하는 다이오드 및 고전압 상호 접속 버스를 포함하는 일부의 실리콘-온-절연체 회로의 평면도, 제3도는 소스 플로워 회로내에서 두개의 가로 방향으로 2중 확산된 금속-산화물-반도체-실리콘-온-절연체(LDMOSSOI) 트랜지스터를 포함하는 브릿지 회로의 구조를 도시하는 단면도
Claims (6)
- 개선된 전압 항복 특성을 나타내며, 고전압 용도에 특히 적합한 집적 회로 장치로서, 제1전도도 형태의 약1000Ω-㎝보다 큰 비저항을 가지는 반도체 기판과; 상기 기판상에 제공된 절연층과; 상기 절연 층상에 제공된 반도체 층과; 상기 반도체 층내에 제공된 서브회로 부분을 형성하는 다수의 가로방향으로 분리된 회로 요소와; 상기 기판내에 제공되고 가로면방향으로 상기 회로 요소와 분리된 상기 제1전도도 형태와 반대인 제2전도도 형태의 확산 영역과; 상기 집적 회로 장치내 어떠한 서브 회로의 최고 전위의 전압과 적어도 같은 전압으로 상기 확산 영역을 접촉시키고 유지시키는 수단을 포함하는 집적 회로 장치.
- 제1항에 있어서, 단일의 확산 영역이 다수의 회로 성분을 위해 제공되는 집적 회로 장치.
- 개선된 전압 항복 특성을 나타내며, 고전압 용도에 특히 적합한 집적 회로 장치로서, 제1전도도 형태의 큰비저항을 가지는 반도체 기판과; 상기 기판상에 제공된 절연층과, 상기 절연 층 상에 제공된 상기 제1전도도 형태와 반대인 제2전도도 형태의 반도체 층과; 상기 반도체 층내에 제공된 서브회로 부분을 형성하는 다수의 회로요소와; 상기 반도체층내에 제공되고 가로방향으로 상기 회로요소와 분리되며, 상기 회로 요소위에 놓여 있지 않은 제2전도도 형태의 확산 영역과; 상기 집적 회로 장치내 어떠한 서브회로의 최고 전위의 전압과 적어도 같은 전압으로 상기 확산 영역을 유지시키는 수단을 포함하는 접적회로 장치.
- 개선된 전압 항복 특성을 나타내는 반도체-온-절연체 가로방향MOS트랜지스터 소스 플로워 브릿지 구조를 가지며, 고전압 용도에 특히 적합한 집적 회로 장치로서, 제1전도도 형태의 반도체 기판과;상기 기판상에 제공된 절연층과; 상기 절연 층상에 제공된 반도체 층과; 상기 반도체 층내에 제공된 상기 트랜지스터의 드레인,게이트,소스 및 상호 접속부분들과; 상기 기판내에 제공되고, 상기 제1전도도 형태와 반대인 제2전도도 형태를 가지며, 상기 드레인, 게이트 및 소스부분들과 가로 방향으로 분리된 확산 영역과; 상기 드레인 또는 소스 부분들의 최고 전위와 적어도 동일한 전압으로 상기 확산 영역을 유지시키는 수단을 포함하는 집적 회로 장치.
- 제1항, 제2항, 제3항 또는 제4항 중의 어느 한 항에 있어서, 상기 기판은 P형 실리콘 기판이고, 상기 절연층은 산화 실리콘 층이며 상기 반도체 층은 실질적으로 n형의 단결정 실리콘층인 집적 회로 장치.
- 제5항에 있어서, 상기 확산 영역은 상기 집적 회로 장치내 어떠한 서브 회로의 최고 전위보다 높은 전압으로 유지되는 집적 회로 장치.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/628,307 US5113236A (en) | 1990-12-14 | 1990-12-14 | Integrated circuit device particularly adapted for high voltage applications |
US628,307 | 1990-12-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920013780A true KR920013780A (ko) | 1992-07-29 |
KR100257412B1 KR100257412B1 (ko) | 2000-05-15 |
Family
ID=24518339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910022656A KR100257412B1 (ko) | 1990-12-14 | 1991-12-11 | 집적회로 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5113236A (ko) |
EP (1) | EP0490437B1 (ko) |
JP (1) | JP3423006B2 (ko) |
KR (1) | KR100257412B1 (ko) |
DE (1) | DE69129617T2 (ko) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5621239A (en) * | 1990-11-05 | 1997-04-15 | Fujitsu Limited | SOI device having a buried layer of reduced resistivity |
DE69209678T2 (de) * | 1991-02-01 | 1996-10-10 | Philips Electronics Nv | Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung |
US5246870A (en) * | 1991-02-01 | 1993-09-21 | North American Philips Corporation | Method for making an improved high voltage thin film transistor having a linear doping profile |
JP2654268B2 (ja) * | 1991-05-13 | 1997-09-17 | 株式会社東芝 | 半導体装置の使用方法 |
EP0562271B1 (en) * | 1992-03-26 | 1998-01-14 | Texas Instruments Incorporated | High voltage structure with oxide isolated source and resurf drift region in bulk silicon |
WO1993026041A1 (en) * | 1992-06-17 | 1993-12-23 | Harris Corporation | Bonded wafer processing |
DE4233773C2 (de) * | 1992-10-07 | 1996-09-19 | Daimler Benz Ag | Halbleiterstruktur für Halbleiterbauelemente mit hoher Durchbruchspannung |
EP0610599A1 (en) * | 1993-01-04 | 1994-08-17 | Texas Instruments Incorporated | High voltage transistor with drift region |
US5548150A (en) * | 1993-03-10 | 1996-08-20 | Kabushiki Kaisha Toshiba | Field effect transistor |
US5373183A (en) * | 1993-04-28 | 1994-12-13 | Harris Corporation | Integrated circuit with improved reverse bias breakdown |
EP0622850B1 (en) * | 1993-04-30 | 1999-04-21 | International Business Machines Corporation | Process for making an electrostatic discharge protect diode for silicon-on-insulator technology |
US5378912A (en) * | 1993-11-10 | 1995-01-03 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region |
US5382818A (en) * | 1993-12-08 | 1995-01-17 | Philips Electronics North America Corporation | Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode |
JPH0923017A (ja) * | 1995-07-06 | 1997-01-21 | Mitsubishi Electric Corp | Soi入力保護回路 |
US5648671A (en) * | 1995-12-13 | 1997-07-15 | U S Philips Corporation | Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile |
JP2822961B2 (ja) * | 1995-12-14 | 1998-11-11 | 日本電気株式会社 | 半導体装置 |
JP3575908B2 (ja) * | 1996-03-28 | 2004-10-13 | 株式会社東芝 | 半導体装置 |
US6121661A (en) * | 1996-12-11 | 2000-09-19 | International Business Machines Corporation | Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation |
US6034399A (en) * | 1997-03-06 | 2000-03-07 | Lockheed Martin Corporation | Electrostatic discharge protection for silicon-on-insulator |
US6160292A (en) * | 1997-04-23 | 2000-12-12 | International Business Machines Corporation | Circuit and methods to improve the operation of SOI devices |
DE19741928C1 (de) * | 1997-09-10 | 1998-09-24 | Siemens Ag | Halbleiterbauelement |
JP3061020B2 (ja) | 1997-11-12 | 2000-07-10 | 日本電気株式会社 | 誘電体分離型半導体装置 |
JPH11261010A (ja) * | 1998-03-13 | 1999-09-24 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US5877048A (en) * | 1998-03-23 | 1999-03-02 | Texas Instruments--Acer Incorporated | 3-D CMOS transistors with high ESD reliability |
JPH11354631A (ja) * | 1998-06-11 | 1999-12-24 | Nec Kansai Ltd | 半導体装置 |
US6545316B1 (en) | 2000-06-23 | 2003-04-08 | Silicon Wireless Corporation | MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same |
US6621121B2 (en) | 1998-10-26 | 2003-09-16 | Silicon Semiconductor Corporation | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
US6521947B1 (en) | 1999-01-28 | 2003-02-18 | International Business Machines Corporation | Method of integrating substrate contact on SOI wafers with STI process |
US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
US6784486B2 (en) * | 2000-06-23 | 2004-08-31 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions therein |
US6512269B1 (en) | 2000-09-07 | 2003-01-28 | International Business Machines Corporation | High-voltage high-speed SOI MOSFET |
WO2002084745A2 (en) * | 2001-04-11 | 2002-10-24 | Silicon Wireless Corporation | Power semiconductor devices and methods of forming same |
JP5151087B2 (ja) * | 2005-11-01 | 2013-02-27 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2009060064A (ja) * | 2007-09-04 | 2009-03-19 | New Japan Radio Co Ltd | 半導体装置及びその製造方法 |
WO2010014281A1 (en) * | 2008-07-30 | 2010-02-04 | Maxpower Semiconductor Inc. | Semiconductor on insulator devices containing permanent charge |
JP5132481B2 (ja) * | 2008-08-27 | 2013-01-30 | 株式会社日立製作所 | 半導体集積回路装置 |
US7829947B2 (en) * | 2009-03-17 | 2010-11-09 | Alpha & Omega Semiconductor Incorporated | Bottom-drain LDMOS power MOSFET structure having a top drain strap |
US10529866B2 (en) * | 2012-05-30 | 2020-01-07 | X-Fab Semiconductor Foundries Gmbh | Semiconductor device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3701198A (en) * | 1970-08-14 | 1972-10-31 | Bell Telephone Labor Inc | Monolithic integrated circuit structures and methods of making same |
US4883543A (en) * | 1980-06-05 | 1989-11-28 | Texas Instruments Incroporated | Shielding for implant in manufacture of dynamic memory |
JPS6271275A (ja) * | 1985-09-25 | 1987-04-01 | Toshiba Corp | 半導体集積回路 |
JPS63157475A (ja) * | 1986-12-20 | 1988-06-30 | Toshiba Corp | 半導体装置及びその製造方法 |
JPS6446979A (en) * | 1987-08-14 | 1989-02-21 | Oki Electric Ind Co Ltd | Analogue switch and sample-and-hold circuit with analogue switch |
JPH01238066A (ja) * | 1988-03-18 | 1989-09-22 | Fujitsu Ltd | 高耐圧トランジスタ |
-
1990
- 1990-12-14 US US07/628,307 patent/US5113236A/en not_active Expired - Lifetime
-
1991
- 1991-12-06 DE DE69129617T patent/DE69129617T2/de not_active Expired - Fee Related
- 1991-12-06 EP EP91203189A patent/EP0490437B1/en not_active Expired - Lifetime
- 1991-12-11 KR KR1019910022656A patent/KR100257412B1/ko not_active IP Right Cessation
- 1991-12-13 JP JP33071191A patent/JP3423006B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100257412B1 (ko) | 2000-05-15 |
EP0490437B1 (en) | 1998-06-17 |
JP3423006B2 (ja) | 2003-07-07 |
US5113236A (en) | 1992-05-12 |
EP0490437A1 (en) | 1992-06-17 |
JPH04275450A (ja) | 1992-10-01 |
DE69129617D1 (de) | 1998-07-23 |
DE69129617T2 (de) | 1999-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920013780A (ko) | 고전압 용도에 적합한 직접 회로 장치 | |
KR870005464A (ko) | 반도체장치 | |
KR910017676A (ko) | 박막트랜지스터 | |
KR910017674A (ko) | 박막 트랜지스터 | |
KR880700468A (ko) | 반도체 장치 | |
KR970067835A (ko) | 반도체 장치 및 그 제조방법 | |
KR960026941A (ko) | 반도체장치 | |
KR850007718A (ko) | 반도체 장치 | |
KR960019497A (ko) | Soi 구조를 가지는 반도체장치 및 그의 제조방법 | |
KR960015960A (ko) | 반도체 장치 | |
KR880004589A (ko) | 기판바이어스 전압발생기를 구비한 상보형 집적회로 배열 | |
KR920022534A (ko) | 스태틱(static)형 반도체 기억 장치, 전계 효과 트랜지스터 및 그의 제조 방법 | |
KR930018718A (ko) | Cmos 집적회로 | |
KR950021714A (ko) | 박막트랜지스터를 갖는 반도체장치와 그의 제조방법 | |
KR890017769A (ko) | 반도체 장치 및 제조방법 | |
KR920005280A (ko) | Mos형 반도체장치 | |
KR940022833A (ko) | 반도체장치 | |
KR890011116A (ko) | 분리 능력이 증가된 mos 트랜지스터 및 이의 제조 방법 | |
KR920018982A (ko) | 반도체 장치 및 반도체 기억장치 | |
KR850000805A (ko) | 받도체장치 | |
KR970077629A (ko) | 마스터 슬라이스 반도체 집적 회로 | |
KR970030788A (ko) | Cmos 반도체 장치 | |
SE8903761D0 (sv) | Halvledarkomponent | |
KR910019247A (ko) | Mos형 반도체장치 | |
KR930005184A (ko) | 정전기 전압 방지용 반도체 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040205 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |