KR920010648A - 불휘발성 반도체 메모리 - Google Patents

불휘발성 반도체 메모리 Download PDF

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Publication number
KR920010648A
KR920010648A KR1019910020946A KR910020946A KR920010648A KR 920010648 A KR920010648 A KR 920010648A KR 1019910020946 A KR1019910020946 A KR 1019910020946A KR 910020946 A KR910020946 A KR 910020946A KR 920010648 A KR920010648 A KR 920010648A
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KR
South Korea
Prior art keywords
region
semiconductor memory
nonvolatile semiconductor
semiconductor
drain region
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KR1019910020946A
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English (en)
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KR100262393B1 (ko
Inventor
마사노리 노다
Original Assignee
오오가 노리오
소니 가부시끼가이샤
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Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR920010648A publication Critical patent/KR920010648A/ko
Application granted granted Critical
Publication of KR100262393B1 publication Critical patent/KR100262393B1/ko

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음

Description

불휘발성 반도체 메모리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 일실시예에 의한 EPROM의 구성을 나타낸 개략선도,
제2도는 본 발명의 일실시예에 의한 EPROM에 있어서 사용되는 소오스 영역 및 드레인 영역이 비대칭적인 구조를 갖는 메모리 트랜지스터를 나타낸 표시도.

Claims (1)

  1. 메모리 셀을 구성하는 트랜지스터가 소오스영역 또는 드레인영역을 공통으로 하여 X자 형으로 배치된 구조를 갖고, 상기 소오스영역 및 상기 드레인영역을 구성하는 한쌍의 반도체영역의 한쪽이 고불순물 농도영역과 저불순물 농도영역으로 이루어지고, 상기 소오스영역 및 상기 드레인영역을 구성하는 한쌍의 반도체영역의 다른쪽이 고불순물 농도영역으로 이루어지고, 데이타 기입시에는 상기 한쪽의 반도체영역이 소오스영역으로 되고, 데이타 독출시에는 상기 한쪽의 반도체영역이 드레인영역으로 되는 것을 특징으로 하는 불휘발성 반도체 메모리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910020946A 1990-11-30 1991-11-22 불휘발성반도체메모리 KR100262393B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2338491A JPH04206965A (ja) 1990-11-30 1990-11-30 不揮発性半導体メモリ
JP90-338491 1990-11-30

Publications (2)

Publication Number Publication Date
KR920010648A true KR920010648A (ko) 1992-06-27
KR100262393B1 KR100262393B1 (ko) 2000-08-01

Family

ID=18318659

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020946A KR100262393B1 (ko) 1990-11-30 1991-11-22 불휘발성반도체메모리

Country Status (3)

Country Link
US (1) US5303184A (ko)
JP (1) JPH04206965A (ko)
KR (1) KR100262393B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557569A (en) * 1993-10-12 1996-09-17 Texas Instruments Incorporated Low voltage flash EEPROM C-cell using fowler-nordheim tunneling
EP0676816B1 (en) * 1994-03-28 2001-10-04 STMicroelectronics S.r.l. Flash - EEPROM memory array and biasing method thereof
KR100277888B1 (ko) * 1997-12-31 2001-02-01 김영환 플래쉬메모리및그의제조방법
US6327178B1 (en) * 2000-07-18 2001-12-04 Micron Technology, Inc. Programmable circuit and its method of operation
JP3831615B2 (ja) 2001-01-16 2006-10-11 三洋電機株式会社 半導体装置とその製造方法
JP4114607B2 (ja) * 2001-09-25 2008-07-09 ソニー株式会社 不揮発性半導体メモリ装置及びその動作方法
JP2004095048A (ja) * 2002-08-30 2004-03-25 Toshiba Corp 不揮発性半導体メモリ
US6954376B2 (en) * 2003-12-15 2005-10-11 Solid State System Co., Ltd. Non-volatile semiconductor memory array structure and operations
KR100734317B1 (ko) * 2006-05-16 2007-07-02 삼성전자주식회사 2-비트 동작을 위한 비휘발성 메모리 소자 및 그 제조 방법
US7773412B2 (en) * 2006-05-22 2010-08-10 Micron Technology, Inc. Method and apparatus for providing a non-volatile memory with reduced cell capacitive coupling

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
US4636979A (en) * 1984-11-02 1987-01-13 Motorola, Inc. Orientation of reference cells in a memory
DE3586718T2 (de) * 1984-12-26 1993-03-11 Sgs Thomson Microelectronics Festwertspeicher mit interdigitalen bitzeilen.
US4901285A (en) * 1985-12-24 1990-02-13 Raytheon Company High density read-only memory
JP2555027B2 (ja) * 1986-05-26 1996-11-20 株式会社日立製作所 半導体記憶装置
US4788663A (en) * 1987-04-24 1988-11-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with a lightly-doped drain structure
US4839705A (en) * 1987-12-16 1989-06-13 Texas Instruments Incorporated X-cell EEPROM array
JP2513795B2 (ja) * 1988-07-22 1996-07-03 沖電気工業株式会社 Ｍｏｓ型半導体記憶装置
JP2580752B2 (ja) * 1988-12-27 1997-02-12 日本電気株式会社 不揮発性半導体記憶装置
JP2772020B2 (ja) * 1989-02-22 1998-07-02 株式会社東芝 Ｍｏｓ型半導体装置

Also Published As

Publication number Publication date
US5303184A (en) 1994-04-12
KR100262393B1 (ko) 2000-08-01
JPH04206965A (ja) 1992-07-28

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