KR910021203A - 공통 데이타선 바이어스 구성을 갖는 기억장치 - Google Patents
공통 데이타선 바이어스 구성을 갖는 기억장치Info
- Publication number
- KR910021203A KR910021203A KR1019900006453A KR900006453A KR910021203A KR 910021203 A KR910021203 A KR 910021203A KR 1019900006453 A KR1019900006453 A KR 1019900006453A KR 900006453 A KR900006453 A KR 900006453A KR 910021203 A KR910021203 A KR 910021203A
- Authority
- KR
- South Korea
- Prior art keywords
- memory
- data line
- common data
- line bias
- bias configuration
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1069—I/O lines read out arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019900006453A KR930007284B1 (ko) | 1984-06-15 | 1990-05-08 | 공통 데이타선 바이어스 구성을 갖는 기억장치 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59-121820 | 1984-06-15 | ||
JP59121820A JPS613390A (ja) | 1984-06-15 | 1984-06-15 | 記憶装置 |
KR1019850003307A KR930007283B1 (ko) | 1984-06-15 | 1985-05-15 | 공통 데이타선 바이어스 구성을 갖는 기억장치 |
KR1019900006453A KR930007284B1 (ko) | 1984-06-15 | 1990-05-08 | 공통 데이타선 바이어스 구성을 갖는 기억장치 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850003307A Division KR930007283B1 (ko) | 1984-06-15 | 1985-05-15 | 공통 데이타선 바이어스 구성을 갖는 기억장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910021203A true KR910021203A (ko) | 1991-12-20 |
KR930007284B1 KR930007284B1 (ko) | 1993-08-04 |
Family
ID=14820737
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850003307A KR930007283B1 (ko) | 1984-06-15 | 1985-05-15 | 공통 데이타선 바이어스 구성을 갖는 기억장치 |
KR1019900006453A KR930007284B1 (ko) | 1984-06-15 | 1990-05-08 | 공통 데이타선 바이어스 구성을 갖는 기억장치 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019850003307A KR930007283B1 (ko) | 1984-06-15 | 1985-05-15 | 공통 데이타선 바이어스 구성을 갖는 기억장치 |
Country Status (7)
Country | Link |
---|---|
US (2) | US4829479A (ko) |
JP (1) | JPS613390A (ko) |
KR (2) | KR930007283B1 (ko) |
DE (1) | DE3521480A1 (ko) |
GB (1) | GB2160378B (ko) |
HK (1) | HK94590A (ko) |
SG (1) | SG81890G (ko) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
JP2514810B2 (ja) * | 1986-12-01 | 1996-07-10 | ヤマハ発動機株式会社 | Vベルト式自動変速機 |
JP2531671B2 (ja) * | 1987-03-31 | 1996-09-04 | 株式会社東芝 | 半導体記憶装置 |
JP2598412B2 (ja) * | 1987-07-10 | 1997-04-09 | 株式会社日立製作所 | 半導体記憶装置 |
JP2593894B2 (ja) * | 1987-11-16 | 1997-03-26 | 富士通株式会社 | 半導体記憶装置 |
JP2542022B2 (ja) * | 1987-12-18 | 1996-10-09 | 沖電気工業株式会社 | 電界効果トランジスタ負荷回路 |
US5027323A (en) * | 1988-01-14 | 1991-06-25 | Hitachi, Ltd. | Write pulse signal generating circuit for a semiconductor memory device |
US4967151A (en) * | 1988-08-17 | 1990-10-30 | International Business Machines Corporation | Method and apparatus for detecting faults in differential current switching logic circuits |
JPH0817034B2 (ja) * | 1988-10-24 | 1996-02-21 | 三菱電機株式会社 | 半導体記憶装置 |
KR0137768B1 (ko) * | 1988-11-23 | 1998-06-01 | 존 지. 웨브 | 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기 |
US5126974A (en) * | 1989-01-20 | 1992-06-30 | Hitachi, Ltd. | Sense amplifier for a memory device |
US5218567A (en) * | 1989-09-14 | 1993-06-08 | Hitachi, Ltd. | Match detection circuit for cache memory apparatus |
JP2759689B2 (ja) * | 1989-11-24 | 1998-05-28 | 松下電器産業株式会社 | Ramの読み出し回路 |
JP2701506B2 (ja) * | 1990-02-08 | 1998-01-21 | 日本電気株式会社 | 半導体メモリ回路 |
JP2501930B2 (ja) * | 1990-02-26 | 1996-05-29 | 株式会社東芝 | 半導体集積回路 |
JP2550743B2 (ja) * | 1990-03-27 | 1996-11-06 | 日本電気株式会社 | 半導体メモリ回路 |
JP2606403B2 (ja) * | 1990-03-30 | 1997-05-07 | 日本電気株式会社 | 半導体メモリ |
JP2789779B2 (ja) * | 1990-04-14 | 1998-08-20 | 日本電気株式会社 | メモリ装置 |
EP0528799B1 (en) * | 1990-05-17 | 1994-12-21 | International Business Machines Corporation | Read/write/restore circuit for memory arrays |
JPH0474382A (ja) * | 1990-07-17 | 1992-03-09 | Fujitsu Ltd | 半導体記憶装置 |
US5059829A (en) * | 1990-09-04 | 1991-10-22 | Motorola, Inc. | Logic level shifting circuit with minimal delay |
US5229967A (en) * | 1990-09-04 | 1993-07-20 | Nogle Scott G | BICMOS sense circuit for sensing data during a read cycle of a memory |
US5257227A (en) * | 1991-01-11 | 1993-10-26 | International Business Machines Corp. | Bipolar FET read-write circuit for memory |
US5235550A (en) * | 1991-05-16 | 1993-08-10 | Micron Technology, Inc. | Method for maintaining optimum biasing voltage and standby current levels in a DRAM array having repaired row-to-column shorts |
JP3385622B2 (ja) * | 1992-01-30 | 2003-03-10 | 富士通株式会社 | スタティックram |
JPH0636570A (ja) * | 1992-07-16 | 1994-02-10 | Mitsubishi Electric Corp | 半導体記憶装置のセンスアンプ回路 |
KR0137083B1 (ko) * | 1993-09-14 | 1998-04-29 | 세까자와 다다시 | 반도체 메모리 장치 및 데이타 판독방법 |
US5532969A (en) * | 1994-10-07 | 1996-07-02 | International Business Machines Corporation | Clocking circuit with increasing delay as supply voltage VDD |
US5521874A (en) * | 1994-12-14 | 1996-05-28 | Sun Microsystems, Inc. | High speed differential to single ended sense amplifier |
KR100196510B1 (ko) * | 1995-12-28 | 1999-06-15 | 김영환 | 센스 증폭기 |
US5757713A (en) * | 1996-09-18 | 1998-05-26 | Micron Technology, Inc. | Adjustable write voltage circuit for SRAMS |
US5907251A (en) * | 1996-11-22 | 1999-05-25 | International Business Machines Corp. | Low voltage swing capacitive bus driver device |
US6057704A (en) * | 1997-12-12 | 2000-05-02 | Xilinx, Inc. | Partially reconfigurable FPGA and method of operating same |
JP3317270B2 (ja) * | 1999-03-17 | 2002-08-26 | 日本電気株式会社 | Sram装置とその制御方法 |
FR2803142B1 (fr) * | 1999-12-23 | 2002-02-01 | St Microelectronics Sa | Circuit integre comprenant un transistor de sortie ayant un temps de passage a zero controle |
US7581998B2 (en) * | 2005-09-08 | 2009-09-01 | Ngk Spark Plug Co., Ltd. | Method for regulating aground electrode position in spark plug |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4836975B1 (ko) * | 1967-12-06 | 1973-11-08 | ||
US3956661A (en) * | 1973-11-20 | 1976-05-11 | Tokyo Sanyo Electric Co., Ltd. | D.C. power source with temperature compensation |
US4151611A (en) * | 1976-03-26 | 1979-04-24 | Tokyo Shibaura Electric Co., Ltd. | Power supply control system for memory systems |
JPS5375828A (en) * | 1976-12-17 | 1978-07-05 | Hitachi Ltd | Semiconductor circuit |
JPS5545207A (en) * | 1978-09-26 | 1980-03-29 | Oki Electric Ind Co Ltd | Complementary mos inverter circuit unit and its production |
JPS5596158A (en) * | 1979-01-16 | 1980-07-22 | Olympus Optical Co | Medicating tube |
JPS5833635B2 (ja) * | 1979-12-25 | 1983-07-21 | 富士通株式会社 | 半導体記憶装置 |
DE3002646C2 (de) * | 1980-01-25 | 1984-05-03 | Schoppe & Faeser Gmbh, 4950 Minden | Schaltungsanordnung zur Versorgung eines in CMOS-Technik ausgeführten elektronischen digitalen Geräts |
JPS57127989A (en) * | 1981-02-02 | 1982-08-09 | Hitachi Ltd | Mos static type ram |
US4430582A (en) * | 1981-11-16 | 1984-02-07 | National Semiconductor Corporation | Fast CMOS buffer for TTL input levels |
JPH0783252B2 (ja) * | 1982-07-12 | 1995-09-06 | 株式会社日立製作所 | 半導体集積回路装置 |
JPH0648595B2 (ja) * | 1982-08-20 | 1994-06-22 | 株式会社東芝 | 半導体記憶装置のセンスアンプ |
JPS5940393A (ja) * | 1982-08-31 | 1984-03-06 | Nec Corp | メモリ回路 |
JPS5968889A (ja) * | 1982-10-08 | 1984-04-18 | Toshiba Corp | 半導体記憶装置 |
US4604533A (en) * | 1982-12-28 | 1986-08-05 | Tokyo Shibaura Denki Kabushiki Kaisha | Sense amplifier |
JPS60103587A (ja) * | 1983-11-09 | 1985-06-07 | Toshiba Corp | 半導体記憶装置のメモリセルキヤパシタ電圧印加回路 |
US4638464A (en) * | 1983-11-14 | 1987-01-20 | International Business Machines Corp. | Charge pump system for non-volatile ram |
JPS60136084A (ja) * | 1983-12-26 | 1985-07-19 | Hitachi Ltd | 半導体集積回路装置 |
JPS60136989A (ja) * | 1983-12-26 | 1985-07-20 | Hitachi Ltd | 半導体記憶装置の書き込み回路 |
JPH0795395B2 (ja) * | 1984-02-13 | 1995-10-11 | 株式会社日立製作所 | 半導体集積回路 |
JPS613390A (ja) * | 1984-06-15 | 1986-01-09 | Hitachi Ltd | 記憶装置 |
-
1984
- 1984-06-15 JP JP59121820A patent/JPS613390A/ja active Pending
-
1985
- 1985-05-15 KR KR1019850003307A patent/KR930007283B1/ko not_active IP Right Cessation
- 1985-06-13 GB GB08515011A patent/GB2160378B/en not_active Expired
- 1985-06-14 DE DE19853521480 patent/DE3521480A1/de not_active Withdrawn
-
1987
- 1987-10-15 US US07/108,623 patent/US4829479A/en not_active Expired - Fee Related
-
1989
- 1989-10-19 US US07/423,947 patent/US5050127A/en not_active Expired - Fee Related
-
1990
- 1990-05-08 KR KR1019900006453A patent/KR930007284B1/ko not_active IP Right Cessation
- 1990-10-09 SG SG818/90A patent/SG81890G/en unknown
- 1990-11-15 HK HK945/90A patent/HK94590A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS613390A (ja) | 1986-01-09 |
KR930007283B1 (ko) | 1993-08-04 |
GB8515011D0 (en) | 1985-07-17 |
HK94590A (en) | 1990-11-23 |
GB2160378B (en) | 1989-02-15 |
US4829479A (en) | 1989-05-09 |
GB2160378A (en) | 1985-12-18 |
SG81890G (en) | 1990-11-23 |
KR930007284B1 (ko) | 1993-08-04 |
DE3521480A1 (de) | 1985-12-19 |
KR860000658A (ko) | 1986-01-30 |
US5050127A (en) | 1991-09-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19960729 Year of fee payment: 4 |
|
LAPS | Lapse due to unpaid annual fee |