DE3680829D1 - Festwertspeicheranordnung. - Google Patents

Festwertspeicheranordnung.

Info

Publication number: DE3680829D1
Authority: DE; Germany
Prior art keywords: fixed memory; memory arrangement; arrangement; fixed; memory
Prior art date: 1985-06-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8686108200T

Other languages

English (en)

Inventor

Yukinori Uchino

Hiroaki Suzuki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toshiba Corp

Original Assignee

Toshiba Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-06-17

Filing date

1986-06-16

Publication date

1991-09-19

1986-06-16 Application filed by Toshiba Corp filed Critical Toshiba Corp

1991-09-19 Application granted granted Critical

1991-09-19 Publication of DE3680829D1 publication Critical patent/DE3680829D1/de

2006-06-17 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

DE8686108200T 1985-06-17 1986-06-16 Festwertspeicheranordnung. Expired - Lifetime DE3680829D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP60131373A JPS61289598A (ja)	1985-06-17	1985-06-17	読出専用半導体記憶装置

Publications (1)

Publication Number	Publication Date
DE3680829D1 true DE3680829D1 (de)	1991-09-19

Family

ID=15056420

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8686108200T Expired - Lifetime DE3680829D1 (de)	1985-06-17	1986-06-16	Festwertspeicheranordnung.

Country Status (4)

Country	Link
US (1)	US4773047A (de)
EP (1)	EP0206205B1 (de)
JP (1)	JPS61289598A (de)
DE (1)	DE3680829D1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0783062B2 (ja) *	1985-06-18	1995-09-06	株式会社東芝	マスタ−スライス型半導体装置
NL8902820A (nl) *	1989-11-15	1991-06-03	Philips Nv	Geintegreerde halfgeleiderschakeling van het master slice type.
US5289406A (en) *	1990-08-28	1994-02-22	Mitsubishi Denki Kabushiki Kaisha	Read only memory for storing multi-data
DE4311358C2 (de) *	1992-04-07	1999-07-22	Mitsubishi Electric Corp	Nicht-flüchtige Halbleiterspeichereinrichtung und Betriebsverfahren für eine nicht-flüchtige Halbleiterspeichereinrichtung und Verfahren zum Programmieren von Information in eine nicht-flüchtige Halbleiterspeichereinrichtung
US5309389A (en) *	1993-08-27	1994-05-03	Honeywell Inc.	Read-only memory with complementary data lines
US5420818A (en) *	1994-01-03	1995-05-30	Texas Instruments Incorporated	Static read only memory (ROM)
US5422846A (en) *	1994-04-04	1995-06-06	Motorola Inc.	Nonvolatile memory having overerase protection
JPH09270197A (ja) *	1996-01-30	1997-10-14	Mitsubishi Electric Corp	半導体記憶装置及びレイアウト／回路情報生成装置
US6147893A (en) *	1999-01-27	2000-11-14	Vlsi Technology, Inc.	Programmable read only memory with high speed differential sensing at low operating voltage
JP2002100196A (ja) *	2000-09-26	2002-04-05	Matsushita Electric Ind Co Ltd	半導体記憶装置
JP2002170399A (ja) *	2000-12-05	2002-06-14	Fujitsu Ltd	半導体装置
JP3904499B2 (ja) *	2002-09-25	2007-04-11	松下電器産業株式会社	半導体記憶装置
US8222922B2 (en) *	2009-03-31	2012-07-17	Toshiba America Research, Inc.	ROM implementation for ROM based logic design
JP5368266B2 (ja) *	2009-11-11	2013-12-18	ローム株式会社	半導体不揮発記憶回路
US9799409B2 (en) *	2016-03-25	2017-10-24	Avago Technologies General Ip (Singapore) Pte. Ltd.	Read-only memory (ROM) architecture with selective encoding

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3550089A (en) *	1968-10-17	1970-12-22	Rca Corp	Complementary semiconductor matrix arrays for low power dissipation logic application
CH625075A5 (de) *	1978-02-22	1981-08-31	Centre Electron Horloger
JPS5949020A (ja) *	1982-09-13	1984-03-21	Toshiba Corp	論理回路
FR2563651B1 (fr) *	1984-04-27	1986-06-27	Thomson Csf Mat Tel	Memoire morte realisee en circuit integre prediffuse
JPS61168198A (ja) *	1985-01-18	1986-07-29	Matsushita Electric Ind Co Ltd	Ｍｏｓ記憶装置

1985
- 1985-06-17 JP JP60131373A patent/JPS61289598A/ja active Granted
1986
- 1986-06-16 EP EP86108200A patent/EP0206205B1/de not_active Expired
- 1986-06-16 DE DE8686108200T patent/DE3680829D1/de not_active Expired - Lifetime
- 1986-06-16 US US06/874,469 patent/US4773047A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
EP0206205B1 (de)	1991-08-14
EP0206205A2 (de)	1986-12-30
EP0206205A3 (en)	1988-04-06
JPH0355916B2 (de)	1991-08-26
US4773047A (en)	1988-09-20
JPS61289598A (ja)	1986-12-19

Legal Events

Date	Code	Title	Description
1992-09-10	8364	No opposition during term of opposition
1999-08-12	8339	Ceased/non-payment of the annual fee

Publication	Publication Date	Title
DE3680453D1 (de)	1991-08-29	Raeumer.
DE3677710D1 (de)	1991-04-04	Cefuroximaxetil-dragee.
DE3685179D1 (de)	1992-06-11	Speicherkarte.
DE3686994D1 (de)	1992-11-26	Halbleiterspeicher.
DE3687322D1 (de)	1993-02-04	Halbleiterspeicheranordnung.
DE3668381D1 (de)	1990-02-22	Contactlinse.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
ATE50243T1 (de)	1990-02-15	Fluorbenzylester.
DE3783100D1 (de)	1993-01-28	Festwertspeicheranordnung.
DE3678517D1 (de)	1991-05-08	Externum.
DE3680829D1 (de)	1991-09-19	Festwertspeicheranordnung.
DE3676026D1 (de)	1991-01-17	Terpolymerisate.
DE3682346D1 (de)	1991-12-12	Halbleiterspeicheranordnung.
DE3683783D1 (de)	1992-03-19	Halbleiterspeicheranordnung.
DE3687284D1 (de)	1993-01-28	Halbleiterspeicheranordnung.
DE3678182D1 (de)	1991-04-25	Perfluorpolycycloalkane.
DE3685889D1 (de)	1992-08-13	Halbleiterspeicheranordnung.
DE3677472D1 (de)	1991-03-14	Blockierverhinderer.
DE3688024D1 (de)	1993-04-22	Speicheranordnung.
FI861147A0 (fi)	1986-03-19	Maolningsfaerg.
DE3680574D1 (de)	1991-09-05	L-aminoacylasen.
DE3673520D1 (de)	1990-09-20	Perfluorpolyaether.
FI850335L (fi)	1986-07-26	Hydrostatiskt drivsystem.
FI861154A0 (fi)	1986-03-19	Kran.