HK94590A - A memory device - Google Patents

A memory device

Info

Publication number
HK94590A
HK94590A HK945/90A HK94590A HK94590A HK 94590 A HK94590 A HK 94590A HK 945/90 A HK945/90 A HK 945/90A HK 94590 A HK94590 A HK 94590A HK 94590 A HK94590 A HK 94590A
Authority
HK
Hong Kong
Prior art keywords
memory device
memory
Prior art date
Application number
HK945/90A
Other languages
English (en)
Inventor
Kinya Mitsumoto
Shinji Nakazato
Yoshiaki Yazawa
Masanori Odaka
Hideaki Uchida
Nobuaki Miyakawa
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK94590A publication Critical patent/HK94590A/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
HK945/90A 1984-06-15 1990-11-15 A memory device HK94590A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59121820A JPS613390A (ja) 1984-06-15 1984-06-15 記憶装置

Publications (1)

Publication Number Publication Date
HK94590A true HK94590A (en) 1990-11-23

Family

ID=14820737

Family Applications (1)

Application Number Title Priority Date Filing Date
HK945/90A HK94590A (en) 1984-06-15 1990-11-15 A memory device

Country Status (7)

Country Link
US (2) US4829479A (ko)
JP (1) JPS613390A (ko)
KR (2) KR930007283B1 (ko)
DE (1) DE3521480A1 (ko)
GB (1) GB2160378B (ko)
HK (1) HK94590A (ko)
SG (1) SG81890G (ko)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置
JP2514810B2 (ja) * 1986-12-01 1996-07-10 ヤマハ発動機株式会社 Ｖベルト式自動変速機
JP2531671B2 (ja) * 1987-03-31 1996-09-04 株式会社東芝 半導体記憶装置
JP2598412B2 (ja) * 1987-07-10 1997-04-09 株式会社日立製作所 半導体記憶装置
JP2593894B2 (ja) * 1987-11-16 1997-03-26 富士通株式会社 半導体記憶装置
JP2542022B2 (ja) * 1987-12-18 1996-10-09 沖電気工業株式会社 電界効果トランジスタ負荷回路
US5027323A (en) * 1988-01-14 1991-06-25 Hitachi, Ltd. Write pulse signal generating circuit for a semiconductor memory device
US4967151A (en) * 1988-08-17 1990-10-30 International Business Machines Corporation Method and apparatus for detecting faults in differential current switching logic circuits
JPH0817034B2 (ja) * 1988-10-24 1996-02-21 三菱電機株式会社 半導体記憶装置
KR0137768B1 (ko) * 1988-11-23 1998-06-01 존 지. 웨브 단일 트랜지스터 메모리 셀과 함께 사용하는 고속 자동 센스 증폭기
US5126974A (en) * 1989-01-20 1992-06-30 Hitachi, Ltd. Sense amplifier for a memory device
US5218567A (en) * 1989-09-14 1993-06-08 Hitachi, Ltd. Match detection circuit for cache memory apparatus
JP2759689B2 (ja) * 1989-11-24 1998-05-28 松下電器産業株式会社 Ｒａｍの読み出し回路
JP2701506B2 (ja) * 1990-02-08 1998-01-21 日本電気株式会社 半導体メモリ回路
JP2501930B2 (ja) * 1990-02-26 1996-05-29 株式会社東芝 半導体集積回路
JP2550743B2 (ja) * 1990-03-27 1996-11-06 日本電気株式会社 半導体メモリ回路
JP2606403B2 (ja) * 1990-03-30 1997-05-07 日本電気株式会社 半導体メモリ
JP2789779B2 (ja) * 1990-04-14 1998-08-20 日本電気株式会社 メモリ装置
WO1991018394A1 (en) * 1990-05-17 1991-11-28 International Business Machines Corporation Read/write/restore circuit for memory arrays
JPH0474382A (ja) * 1990-07-17 1992-03-09 Fujitsu Ltd 半導体記憶装置
US5229967A (en) * 1990-09-04 1993-07-20 Nogle Scott G BICMOS sense circuit for sensing data during a read cycle of a memory
US5059829A (en) * 1990-09-04 1991-10-22 Motorola, Inc. Logic level shifting circuit with minimal delay
US5257227A (en) * 1991-01-11 1993-10-26 International Business Machines Corp. Bipolar FET read-write circuit for memory
US5235550A (en) * 1991-05-16 1993-08-10 Micron Technology, Inc. Method for maintaining optimum biasing voltage and standby current levels in a DRAM array having repaired row-to-column shorts
JP3385622B2 (ja) * 1992-01-30 2003-03-10 富士通株式会社 スタティックｒａｍ
JPH0636570A (ja) * 1992-07-16 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置のセンスアンプ回路
KR0137083B1 (ko) * 1993-09-14 1998-04-29 세까자와 다다시 반도체 메모리 장치 및 데이타 판독방법
US5532969A (en) * 1994-10-07 1996-07-02 International Business Machines Corporation Clocking circuit with increasing delay as supply voltage VDD
US5521874A (en) * 1994-12-14 1996-05-28 Sun Microsystems, Inc. High speed differential to single ended sense amplifier
KR100196510B1 (ko) * 1995-12-28 1999-06-15 김영환 센스 증폭기
US5757713A (en) * 1996-09-18 1998-05-26 Micron Technology, Inc. Adjustable write voltage circuit for SRAMS
US5907251A (en) * 1996-11-22 1999-05-25 International Business Machines Corp. Low voltage swing capacitive bus driver device
US6057704A (en) * 1997-12-12 2000-05-02 Xilinx, Inc. Partially reconfigurable FPGA and method of operating same
JP3317270B2 (ja) * 1999-03-17 2002-08-26 日本電気株式会社 Ｓｒａｍ装置とその制御方法
FR2803142B1 (fr) * 1999-12-23 2002-02-01 St Microelectronics Sa Circuit integre comprenant un transistor de sortie ayant un temps de passage a zero controle
US7581998B2 (en) * 2005-09-08 2009-09-01 Ngk Spark Plug Co., Ltd. Method for regulating aground electrode position in spark plug

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836975B1 (ko) * 1967-12-06 1973-11-08
US3956661A (en) * 1973-11-20 1976-05-11 Tokyo Sanyo Electric Co., Ltd. D.C. power source with temperature compensation
DE2713648A1 (de) * 1976-03-26 1977-10-06 Tokyo Shibaura Electric Co Stromzufuhr-steuervorrichtung fuer speichervorrichtungen
JPS5375828A (en) * 1976-12-17 1978-07-05 Hitachi Ltd Semiconductor circuit
JPS5545207A (en) * 1978-09-26 1980-03-29 Oki Electric Ind Co Ltd Complementary mos inverter circuit unit and its production
JPS5596158A (en) * 1979-01-16 1980-07-22 Olympus Optical Co Medicating tube
JPS5833635B2 (ja) * 1979-12-25 1983-07-21 富士通株式会社 半導体記憶装置
DE3002646C2 (de) * 1980-01-25 1984-05-03 Schoppe & Faeser Gmbh, 4950 Minden Schaltungsanordnung zur Versorgung eines in CMOS-Technik ausgeführten elektronischen digitalen Geräts
JPS57127989A (en) * 1981-02-02 1982-08-09 Hitachi Ltd Mos static type ram
US4430582A (en) * 1981-11-16 1984-02-07 National Semiconductor Corporation Fast CMOS buffer for TTL input levels
JPH0783252B2 (ja) * 1982-07-12 1995-09-06 株式会社日立製作所 半導体集積回路装置
JPH0648595B2 (ja) * 1982-08-20 1994-06-22 株式会社東芝 半導体記憶装置のセンスアンプ
JPS5940393A (ja) * 1982-08-31 1984-03-06 Nec Corp メモリ回路
JPS5968889A (ja) * 1982-10-08 1984-04-18 Toshiba Corp 半導体記憶装置
US4604533A (en) * 1982-12-28 1986-08-05 Tokyo Shibaura Denki Kabushiki Kaisha Sense amplifier
JPS60103587A (ja) * 1983-11-09 1985-06-07 Toshiba Corp 半導体記憶装置のメモリセルキヤパシタ電圧印加回路
US4638464A (en) * 1983-11-14 1987-01-20 International Business Machines Corp. Charge pump system for non-volatile ram
JPS60136084A (ja) * 1983-12-26 1985-07-19 Hitachi Ltd 半導体集積回路装置
JPS60136989A (ja) * 1983-12-26 1985-07-20 Hitachi Ltd 半導体記憶装置の書き込み回路
JPH0795395B2 (ja) * 1984-02-13 1995-10-11 株式会社日立製作所 半導体集積回路
JPS613390A (ja) * 1984-06-15 1986-01-09 Hitachi Ltd 記憶装置

Also Published As

Publication number Publication date
KR930007284B1 (ko) 1993-08-04
GB8515011D0 (en) 1985-07-17
KR930007283B1 (ko) 1993-08-04
US5050127A (en) 1991-09-17
GB2160378B (en) 1989-02-15
DE3521480A1 (de) 1985-12-19
KR910021203A (ko) 1991-12-20
SG81890G (en) 1990-11-23
GB2160378A (en) 1985-12-18
JPS613390A (ja) 1986-01-09
KR860000658A (ko) 1986-01-30
US4829479A (en) 1989-05-09

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)