KR910008872A - 반도체 소자와 그 제조방법 - Google Patents

반도체 소자와 그 제조방법 Download PDF

Info

Publication number
KR910008872A
KR910008872A KR1019900015372A KR900015372A KR910008872A KR 910008872 A KR910008872 A KR 910008872A KR 1019900015372 A KR1019900015372 A KR 1019900015372A KR 900015372 A KR900015372 A KR 900015372A KR 910008872 A KR910008872 A KR 910008872A
Authority
KR
South Korea
Prior art keywords
regions
semiconductor device
exposed
adjacent
different
Prior art date
Application number
KR1019900015372A
Other languages
English (en)
Other versions
KR940005740B1 (ko
Inventor
히데아키 기노시타
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910008872A publication Critical patent/KR910008872A/ko
Application granted granted Critical
Publication of KR940005740B1 publication Critical patent/KR940005740B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02469—Group 12/16 materials
    • H01L21/02477—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 소자와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명의 제1실시예에 따른 광도파로 및 그 제조공정을 나타낸 단면도.

Claims (2)

  1. 반도체기판(11)의 주표면에 노출되며, 서로 인접함과 동시에 조성 또는 전기전도율이 다른 제1(11a,31a,51a)및 제2영역(14,34,54)과, 이 제1(11a,31a,51a)및 제2영역(14,34,54)의 각각의 노출상면부에 인접하여 형성됨과 동시에 조성 또는 밴드갭에너지가 서로 다른 제1(12,32,52) 및 제2화합물반도체에피셜층(13,33,53)이 구비된 것을 특징으로 하는 반도체 소자.
  2. 반도체기판(11)의 주표면에 노출되며, 서로 인접함과 동시에 조성 또는 전기전도율이 다른 제1(11a,31a,51a)및 제2영역(14,34,54)을 형성하는 공정과, 이 제1(11a,31a,51a)및 제2영역(14,34,54)의 노출면상부에 양영역과 격자정합하는 화합물반도체층(12,32,13,33,53)을 에피텍셜성장기술에 의해 동시에 퇴적시키는 공정이 구비된 것을 특징으로 하는 반도체 소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900015372A 1989-10-02 1990-09-27 반도체소자와 그 제조방법 KR940005740B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1257233A JPH0828498B2 (ja) 1989-10-02 1989-10-02 半導体素子とその製造方法
JP01-257233 1989-10-02

Publications (2)

Publication Number Publication Date
KR910008872A true KR910008872A (ko) 1991-05-31
KR940005740B1 KR940005740B1 (ko) 1994-06-23

Family

ID=17303530

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900015372A KR940005740B1 (ko) 1989-10-02 1990-09-27 반도체소자와 그 제조방법

Country Status (5)

Country Link
US (1) US5093696A (ko)
EP (1) EP0423535B1 (ko)
JP (1) JPH0828498B2 (ko)
KR (1) KR940005740B1 (ko)
DE (1) DE69029453T2 (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101075771B1 (ko) * 2003-05-09 2011-10-24 미츠비시 가스 가가쿠 가부시키가이샤 금속박 부착형 적층체
KR102268708B1 (ko) * 2020-09-10 2021-06-25 (주)상아프론테크 동박적층판(ccl)용 저유전 복합필름 및 이를 포함하는 저유전 동박적층판(ccl)
KR102374542B1 (ko) * 2021-06-02 2022-03-15 (주)상아프론테크 고속통신용 저유전 복합필름, 이의 제조방법 및 이를 포함하는 동박적층판
KR102374540B1 (ko) * 2021-06-02 2022-03-16 (주)상아프론테크 고속통신용 저유전 복합필름, 이의 제조방법 및 이를 포함하는 동박적층판
KR102374543B1 (ko) * 2021-06-02 2022-03-17 (주)상아프론테크 고속통신용 저유전 복합필름, 이의 제조방법 및 이를 포함하는 동박적층판

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2624881B2 (ja) * 1990-08-23 1997-06-25 株式会社東芝 半導体レーザ素子およびその製造方法
US5311055A (en) * 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
KR950007490B1 (ko) * 1991-12-28 1995-07-11 엘지전자주식회사 반도체 레이저
JPH06104533A (ja) * 1992-09-22 1994-04-15 Matsushita Electric Ind Co Ltd 青色発光素子およびその製造方法
US5629232A (en) * 1994-11-14 1997-05-13 The Whitaker Corporation Method of fabricating semiconductor light emitting devices
US5608234A (en) * 1994-11-14 1997-03-04 The Whitaker Corporation Semi-insulating edge emitting light emitting diode
JP3115775B2 (ja) * 1994-11-16 2000-12-11 三菱電機株式会社 半導体レーザの製造方法
JP3755090B2 (ja) * 1995-06-14 2006-03-15 三菱電機株式会社 半導体装置の製造方法，及び半導体装置
JPH098344A (ja) * 1995-06-14 1997-01-10 Hitachi Cable Ltd 発光ダイオード及びその製造方法
KR100374345B1 (ko) * 1995-12-30 2003-05-17 삼성전자주식회사 매립형광도파로제작방법
US6043509A (en) * 1996-12-13 2000-03-28 Hitachi Cable, Ltd. Light-emitting diode having moisture-proof characteristics and high output power
KR100265859B1 (ko) * 1996-12-21 2000-09-15 정선종 전계방출 디스플레이용 발광입자
CN203787451U (zh) * 2012-08-28 2014-08-20 璨圆光电股份有限公司 一种化合物半导体元件
US9045275B2 (en) 2013-10-30 2015-06-02 Le Papillon Bioplan Container for dispensing a combination product
DE102017108949B4 (de) 2016-05-13 2021-08-26 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
DE102017109809B4 (de) * 2016-05-13 2024-01-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Halbleiterchips
DE102017109812A1 (de) 2016-05-13 2017-11-16 Osram Opto Semiconductors Gmbh Licht emittierender Halbleiterchip und Verfahren zur Herstellung eines Licht emittierenden Halbleiterchips

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786951A (en) * 1985-02-12 1988-11-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor optical element and a process for producing the same
GB8516984D0 (en) * 1985-07-04 1985-08-07 British Telecomm Etching method
JPS62173792A (ja) * 1986-01-21 1987-07-30 ゼロツクス　コ−ポレ−シヨン 半導体構造体及びその半導体領域変換方法
US4818722A (en) * 1986-09-29 1989-04-04 Siemens Aktiengesellschaft Method for generating a strip waveguide
JPH073908B2 (ja) * 1987-07-16 1995-01-18 三菱電機株式会社 半導体発光装置の製造方法
CA1315865C (en) * 1988-02-09 1993-04-06 Elyahou Kapon Semiconductor super lattice heterostructure fabrication methods, structures and devices
JP2831667B2 (ja) * 1988-12-14 1998-12-02 株式会社東芝 半導体レーザ装置及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101075771B1 (ko) * 2003-05-09 2011-10-24 미츠비시 가스 가가쿠 가부시키가이샤 금속박 부착형 적층체
KR102268708B1 (ko) * 2020-09-10 2021-06-25 (주)상아프론테크 동박적층판(ccl)용 저유전 복합필름 및 이를 포함하는 저유전 동박적층판(ccl)
WO2022055028A1 (ko) * 2020-09-10 2022-03-17 (주)상아프론테크 동박적층판(ccl)용 저유전 복합필름 및 이를 포함하는 저유전 동박적층판(ccl)
KR102374542B1 (ko) * 2021-06-02 2022-03-15 (주)상아프론테크 고속통신용 저유전 복합필름, 이의 제조방법 및 이를 포함하는 동박적층판
KR102374540B1 (ko) * 2021-06-02 2022-03-16 (주)상아프론테크 고속통신용 저유전 복합필름, 이의 제조방법 및 이를 포함하는 동박적층판
KR102374543B1 (ko) * 2021-06-02 2022-03-17 (주)상아프론테크 고속통신용 저유전 복합필름, 이의 제조방법 및 이를 포함하는 동박적층판

Also Published As

Publication number Publication date
EP0423535A3 (en) 1991-12-04
EP0423535B1 (en) 1996-12-18
JPH0828498B2 (ja) 1996-03-21
JPH03119760A (ja) 1991-05-22
DE69029453T2 (de) 1997-05-15
DE69029453D1 (de) 1997-01-30
US5093696A (en) 1992-03-03
KR940005740B1 (ko) 1994-06-23
EP0423535A2 (en) 1991-04-24

Similar Documents

Publication Publication Date Title
KR910008872A (ko) 반도체 소자와 그 제조방법
TW350135B (en) Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same
ATE279799T1 (de) Verbindungshalbleiterstruktur für optoelektronische bauelemente
CA2058513A1 (en) Soi-type thin film transistor and manufacturing method therefor
JPS5710992A (en) Semiconductor device and manufacture therefor
KR940022934A (ko) 반도체 발광 소자 및 그 제조 방법
KR850005164A (ko) 반도체 장치
KR920007254A (ko) 반도체장치
IE822570L (en) Semiconductor device and method of manufacturing the same
KR890001168A (ko) 반도체 장치에서의 절연산화물 형성방법 및 그 방법에 따라 제조된 반도체 장치
KR920013788A (ko) 단일의 폴리(poly) 바이폴라 공정중에 쇼트키 장벽 다이오드를 제조하는 개선된 방법
KR910010761A (ko) 에피택셜 웨이퍼 및 그 제조방법
KR920015650A (ko) 반도체 발광소자 및 그 제조방법
KR910013565A (ko) 래터럴형 반도체장치
KR880003401A (ko) 고속 반도체장치 및 그 제조방법
JPS56150862A (en) Semiconductor device
KR900019222A (ko) 필드플레이트를 갖춘 반도체장치 및 그 제조방법
TW344108B (en) A bipolar transistor and method of manufacturing thereof
KR880009444A (ko) 반도체 장치의 제조방법
KR910001889A (ko) 반도체장치
KR930017203A (ko) 화합물 반도체 장치 및 그 제조방법
JPS56144533A (en) Manufacture of semiconductor device
KR940016958A (ko) 계면 상층 재성장을 통한 다이오드 제조방법
KR910013436A (ko) 반도체소자의 제조방법
KR930003473A (ko) 반도체 레이저의 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20070531

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee