KR910013436A - 반도체소자의 제조방법 - Google Patents
반도체소자의 제조방법 Download PDFInfo
- Publication number
- KR910013436A KR910013436A KR1019900020567A KR900020567A KR910013436A KR 910013436 A KR910013436 A KR 910013436A KR 1019900020567 A KR1019900020567 A KR 1019900020567A KR 900020567 A KR900020567 A KR 900020567A KR 910013436 A KR910013436 A KR 910013436A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide
- manufacturing
- semiconductor device
- conductivity type
- semiconductor substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 4
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000000758 substrate Substances 0.000 claims 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방법을 적용시키는 파워 MOS트랜지스터의 요부를 나타낸 단면도.
Claims (1)
- 어떤 도전형을 나타내는 고농도 반도체기판(1)의 표면에 불순물농도가 낮은 동일도전형의 기상성장층(2)을 퇴적시킨 후, 산화규소, 알루미나, 규소, 산화 베릴륨, 산화 마그네슘, 산화 게르마늄, 산화 지르코늄 및 산화 티타늄으로 이루어진 군(群)으로부터 선정하는 1종 또는 복수종의 미분말에 의해 노출된 반도체기판의 이면에 손상 혹은 왜층을 형성하는 공정을 포함하는 것을 특징으로 하는 반도체 소자의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1325627A JPH03185830A (ja) | 1989-12-15 | 1989-12-15 | 半導体素子の製造方法 |
| JP1-325627 | 1989-12-15 | ||
| JP89-325627 | 1989-12-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910013436A true KR910013436A (ko) | 1991-08-08 |
| KR940008377B1 KR940008377B1 (ko) | 1994-09-12 |
Family
ID=18178970
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900020567A KR940008377B1 (ko) | 1989-12-15 | 1990-12-14 | 반도체소자의 제조방법 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0432789A1 (ko) |
| JP (1) | JPH03185830A (ko) |
| KR (1) | KR940008377B1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3929557B2 (ja) * | 1997-07-30 | 2007-06-13 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| CN107973269A (zh) * | 2017-12-18 | 2018-05-01 | 中国电子科技集团公司第四十六研究所 | 一种mems器件用多层结构硅片的制作方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2827704C3 (de) * | 1978-06-23 | 1981-03-19 | Erwin Sick Gmbh Optik-Elektronik, 7808 Waldkirch | Optische Vorrichtung zur Bestimmung der Lichtaustrittswinkel |
| US4525239A (en) * | 1984-04-23 | 1985-06-25 | Hewlett-Packard Company | Extrinsic gettering of GaAs wafers for MESFETS and integrated circuits |
| EP0251280A3 (en) * | 1986-06-30 | 1989-11-23 | Nec Corporation | Method of gettering semiconductor wafers with a laser beam |
-
1989
- 1989-12-15 JP JP1325627A patent/JPH03185830A/ja active Pending
-
1990
- 1990-12-14 EP EP90124191A patent/EP0432789A1/en not_active Withdrawn
- 1990-12-14 KR KR1019900020567A patent/KR940008377B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH03185830A (ja) | 1991-08-13 |
| KR940008377B1 (ko) | 1994-09-12 |
| EP0432789A1 (en) | 1991-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR870003575A (ko) | 반도체장치의 형성방법 | |
| KR910013436A (ko) | 반도체소자의 제조방법 | |
| KR900017129A (ko) | 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법 | |
| KR880009426A (ko) | 반도체 메모리장치 및 그 제조방법 | |
| KR910013565A (ko) | 래터럴형 반도체장치 | |
| KR910008853A (ko) | 반도체장치와 그 제조방법 | |
| KR910013463A (ko) | 반도체 소자의 개구형성방법 | |
| KR910015005A (ko) | 반도체 디바이스 제조 방법 | |
| KR910003802A (ko) | 반도체장치 및 그 제조방법 | |
| KR920003546A (ko) | 반도체 제조방법 | |
| KR890005851A (ko) | 반도체 장치의 소자분리 방법 | |
| KR920007146A (ko) | 고전압 트랜지스터 | |
| KR920017213A (ko) | 반도체 장치의 소자격리 방법 | |
| KR920020636A (ko) | 반도체 장치의 제조공정 | |
| KR920013668A (ko) | 반도체 장치의 소자격리 방법 | |
| KR910008802A (ko) | 반도체장치의 제조방법 | |
| KR920003448A (ko) | 바이폴라 소자의 메몰층 형성방법 | |
| KR950021050A (ko) | 웨이퍼의 단차 완화 방법 | |
| KR920008962A (ko) | 반도체소자의 문턱전압 안정화방법 | |
| KR930003366A (ko) | 반도체 장치의 소자 분리방법 | |
| KR930015084A (ko) | 박막 트랜지스터의 구조와 그 제조방법 | |
| KR920022385A (ko) | 부가 산화막을 갖는 반도체 장치 및 그 제조 방법 | |
| KR920017203A (ko) | 반도체 장치 제조방법 | |
| KR910013575A (ko) | 열산화막중의 인성분 조절을 이용하는 실리콘 반도체 집적회로 제조방법 | |
| KR930001353A (ko) | 바이모스 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20030901 Year of fee payment: 10 |
|
| LAPS | Lapse due to unpaid annual fee |