KR910005574A - 정 전압회로 - Google Patents

정 전압회로 Download PDF

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Publication number
KR910005574A
KR910005574A KR1019900011946A KR900011946A KR910005574A KR 910005574 A KR910005574 A KR 910005574A KR 1019900011946 A KR1019900011946 A KR 1019900011946A KR 900011946 A KR900011946 A KR 900011946A KR 910005574 A KR910005574 A KR 910005574A
Authority
KR
South Korea
Prior art keywords
power supply
constant voltage
voltage circuit
transistor
supply potential
Prior art date
Application number
KR1019900011946A
Other languages
English (en)
Other versions
KR930003927B1 (ko
Inventor
소조 니타
야스히로 스기모토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910005574A publication Critical patent/KR910005574A/ko
Application granted granted Critical
Publication of KR930003927B1 publication Critical patent/KR930003927B1/ko

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Classifications

    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Logic Circuits (AREA)

Abstract

내용 없음.

Description

정 전압회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 정전압회로의 1실시예를 나타낸 회로도.
제2도는 제1도중 전압원(VBB)를 구체화한 회로예를 나타낸 도면.

Claims (1)

  1. 접지전위(GND)와 전원전위(VEE)간에 접속된 밴드갭회로(30)와, 이 밴드갭회로(30)의 출력단자(Vref)에 일단측이 접속된 저항(R1)의 타단측에 그 베이스가 접속된 부귀환용 트랜지스터(Q4)의 콜렉터에 콜렉터가 접속되면서 상기 전원전위(VEE)의 변동에 영향을 받지 않는 전압원(VBB)에 베이스가 접속된 트랜지스터(Q5) 및, 이 트랜지스터(Q5)의 에미터와 상기 전원전위(VEE)간에 접속된 저항(R5)을 구비하여 구성된 것을 특징으로 하는 정전압회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900011946A 1989-08-03 1990-08-03 정 전압회로 KR930003927B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP01-201851 1989-08-03
JP1201851A JPH0680486B2 (ja) 1989-08-03 1989-08-03 定電圧回路
JP89-201851 1989-08-03

Publications (2)

Publication Number Publication Date
KR910005574A true KR910005574A (ko) 1991-03-30
KR930003927B1 KR930003927B1 (ko) 1993-05-15

Family

ID=16447938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900011946A KR930003927B1 (ko) 1989-08-03 1990-08-03 정 전압회로

Country Status (4)

Country Link
EP (1) EP0411657B1 (ko)
JP (1) JPH0680486B2 (ko)
KR (1) KR930003927B1 (ko)
DE (1) DE69015727T2 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5304918A (en) * 1992-01-22 1994-04-19 Samsung Semiconductor, Inc. Reference circuit for high speed integrated circuits
DE4312117C1 (de) * 1993-04-14 1994-04-14 Texas Instruments Deutschland Bandabstands-Referenzspannungsquelle
KR960002457B1 (ko) * 1994-02-07 1996-02-17 금성일렉트론주식회사 정전압회로
JP2867947B2 (ja) * 1996-03-28 1999-03-10 日本電気株式会社 参照電位発生回路
DE19618914C1 (de) * 1996-05-10 1997-08-14 Siemens Ag Schaltungsanordnung zur Erzeugung eines Referenzpotentials
DE19621110C1 (de) * 1996-05-24 1997-06-12 Siemens Ag Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials
DE19624676C1 (de) * 1996-06-20 1997-10-02 Siemens Ag Schaltungsanordnung zur Erzeugung eines Referenzpotentials
JP3638530B2 (ja) * 2001-02-13 2005-04-13 Necエレクトロニクス株式会社 基準電流回路及び基準電圧回路
JP5169468B2 (ja) * 2008-05-15 2013-03-27 オムロン株式会社 基準電圧発生回路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100477A (en) * 1976-11-29 1978-07-11 Burroughs Corporation Fully regulated temperature compensated voltage regulator
US4176308A (en) * 1977-09-21 1979-11-27 National Semiconductor Corporation Voltage regulator and current regulator
US4553083A (en) * 1983-12-01 1985-11-12 Advanced Micro Devices, Inc. Bandgap reference voltage generator with VCC compensation
JPS60175131A (ja) * 1984-02-20 1985-09-09 Matsushita Electric Ind Co Ltd 電圧安定化回路
JPS62191907A (ja) * 1986-02-19 1987-08-22 Hitachi Ltd 半導体回路
US4795918A (en) * 1987-05-01 1989-01-03 Fairchild Semiconductor Corporation Bandgap voltage reference circuit with an npn current bypass circuit

Also Published As

Publication number Publication date
DE69015727D1 (de) 1995-02-16
JPH0680486B2 (ja) 1994-10-12
EP0411657A1 (en) 1991-02-06
KR930003927B1 (ko) 1993-05-15
DE69015727T2 (de) 1995-06-01
EP0411657B1 (en) 1995-01-04
JPH0365716A (ja) 1991-03-20

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