KR900015308A - 정전 보호회로 - Google Patents

정전 보호회로 Download PDF

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Publication number
KR900015308A
KR900015308A KR1019900003733A KR900003733A KR900015308A KR 900015308 A KR900015308 A KR 900015308A KR 1019900003733 A KR1019900003733 A KR 1019900003733A KR 900003733 A KR900003733 A KR 900003733A KR 900015308 A KR900015308 A KR 900015308A
Authority
KR
South Korea
Prior art keywords
protection circuit
npn transistor
circuit
input
power failure
Prior art date
Application number
KR1019900003733A
Other languages
English (en)
Other versions
KR930009026B1 (ko
Inventor
마사시 이토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900015308A publication Critical patent/KR900015308A/ko
Application granted granted Critical
Publication of KR930009026B1 publication Critical patent/KR930009026B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6242—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several inputs only and without selecting means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
    • H03K17/6271—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several outputs only and without selecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음.

Description

정전 보호회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 징전보호회로의 1실시예를 도시한 회로도,
제2도는 제1도에 도시된 정전보호회로의 패턴구성의 일례를 도시한 도면,
제3도 및 제4도는 각각 본 발명에 따른 정전보호회로의 다른 실시예를 도시한 회로도.

Claims (1)

  1. 반도체집적회로에 있는 입력단자(IN)에 베이스가 접속된 입력용 NPN트랜지스터(Q2)의 에미터와 접지전위 사이에 저항(R)이 접속된 입력회로나 반도체집적회로에 있는 입력단자(OUT)에 에미터가 접속된 출력용 NPN트랜지스터(Ql)의 에미터와 접지전위 사이에 저항(R)이 접속된 출력회로의 정전보호회로에 있어서, 상기 저항(R)은 반도체기판의 N형 섬영역(27) 내에 형성된 P형 저항영역(28)으로 구성되고, 또 상기 N형 섬영역(27)은 상기 입력용 NPN트랜지스터(Q2)나 상기 출력용 NPN트랜지스터(Ql)의 베이스영역(B)에 전기적으로 접속되어 있는 것을 특징으로 하는 정전보호회로.
    ※참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019900003733A 1989-03-20 1990-03-20 정전보호회로 KR930009026B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-065862 1989-03-20
JP1065862A JPH0766958B2 (ja) 1989-03-20 1989-03-20 静電保護回路
JP65862 1989-03-20

Publications (2)

Publication Number Publication Date
KR900015308A true KR900015308A (ko) 1990-10-26
KR930009026B1 KR930009026B1 (ko) 1993-09-18

Family

ID=13299242

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003733A KR930009026B1 (ko) 1989-03-20 1990-03-20 정전보호회로

Country Status (5)

Country Link
US (1) US5059831A (ko)
EP (1) EP0388896B1 (ko)
JP (1) JPH0766958B2 (ko)
KR (1) KR930009026B1 (ko)
DE (1) DE69030977T2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561373A (en) * 1990-10-09 1996-10-01 Fujitsu Limited Method and device for detecting electrostatic stress applied to a product semiconductor device during each production process
US5311391A (en) * 1993-05-04 1994-05-10 Hewlett-Packard Company Electrostatic discharge protection circuit with dynamic triggering
KR100337925B1 (ko) * 1997-06-28 2002-11-18 주식회사 하이닉스반도체 반도체 정전기 보호회로
US6693780B2 (en) 2001-08-02 2004-02-17 Koninklijke Philips Electronics N.V. ESD protection devices for a differential pair of transistors
TWI745540B (zh) * 2018-02-05 2021-11-11 力智電子股份有限公司 半導體裝置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3512009A (en) * 1967-05-22 1970-05-12 Nasa Exclusive-or digital logic module
US3742250A (en) * 1971-04-07 1973-06-26 Signetics Corp Active region logic circuit
US3699362A (en) * 1971-05-27 1972-10-17 Ibm Transistor logic circuit
US4028564A (en) * 1971-09-22 1977-06-07 Robert Bosch G.M.B.H. Compensated monolithic integrated current source
NL8006975A (nl) * 1980-12-22 1982-07-16 Delta Kabel Bv Elektronische schakelaar.
JPS58101311A (ja) * 1981-12-11 1983-06-16 Toshiba Corp 多相電圧電流変換回路
JPS59103567A (ja) * 1982-12-01 1984-06-15 Fuji Electric Co Ltd トランジスタの過電流保護回路
JPS6097659A (ja) * 1983-11-01 1985-05-31 Matsushita Electronics Corp 半導体集積回路
JPS60241252A (ja) * 1984-05-16 1985-11-30 Sanyo Electric Co Ltd 半導体集積回路装置
DE3420535C2 (de) * 1984-06-01 1986-04-30 Anton Piller GmbH & Co KG, 3360 Osterode Halbleiter-Modul für eine schnelle Schaltanordnung
JPS60263502A (ja) * 1984-06-08 1985-12-27 Mitsubishi Electric Corp 半導体集積回路装置
US4616142A (en) * 1984-12-31 1986-10-07 Sundstrand Corporation Method of operating parallel-connected semiconductor switch elements
US4761565A (en) * 1987-06-29 1988-08-02 Eastman Kodak Company CCD clock driver circuit
JPH01129451A (ja) * 1987-11-16 1989-05-22 Fujitsu Ltd 半導体装置
US4808461A (en) * 1987-12-14 1989-02-28 Foster-Miller, Inc. Composite structure reinforcement

Also Published As

Publication number Publication date
JPH0766958B2 (ja) 1995-07-19
DE69030977D1 (de) 1997-08-07
EP0388896A3 (en) 1991-10-09
EP0388896A2 (en) 1990-09-26
DE69030977T2 (de) 1997-11-27
JPH02246145A (ja) 1990-10-01
EP0388896B1 (en) 1997-07-02
KR930009026B1 (ko) 1993-09-18
US5059831A (en) 1991-10-22

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