KR900015308A - 정전 보호회로 - Google Patents
정전 보호회로 Download PDFInfo
- Publication number
- KR900015308A KR900015308A KR1019900003733A KR900003733A KR900015308A KR 900015308 A KR900015308 A KR 900015308A KR 1019900003733 A KR1019900003733 A KR 1019900003733A KR 900003733 A KR900003733 A KR 900003733A KR 900015308 A KR900015308 A KR 900015308A
- Authority
- KR
- South Korea
- Prior art keywords
- protection circuit
- npn transistor
- circuit
- input
- power failure
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/603—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors with coupled emitters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
- H03K17/6242—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several inputs only and without selecting means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
- H03K17/62—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors
- H03K17/6271—Switching arrangements with several input- output-terminals, e.g. multiplexers, distributors with several outputs only and without selecting means
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 징전보호회로의 1실시예를 도시한 회로도,
제2도는 제1도에 도시된 정전보호회로의 패턴구성의 일례를 도시한 도면,
제3도 및 제4도는 각각 본 발명에 따른 정전보호회로의 다른 실시예를 도시한 회로도.
Claims (1)
- 반도체집적회로에 있는 입력단자(IN)에 베이스가 접속된 입력용 NPN트랜지스터(Q2)의 에미터와 접지전위 사이에 저항(R)이 접속된 입력회로나 반도체집적회로에 있는 입력단자(OUT)에 에미터가 접속된 출력용 NPN트랜지스터(Ql)의 에미터와 접지전위 사이에 저항(R)이 접속된 출력회로의 정전보호회로에 있어서, 상기 저항(R)은 반도체기판의 N형 섬영역(27) 내에 형성된 P형 저항영역(28)으로 구성되고, 또 상기 N형 섬영역(27)은 상기 입력용 NPN트랜지스터(Q2)나 상기 출력용 NPN트랜지스터(Ql)의 베이스영역(B)에 전기적으로 접속되어 있는 것을 특징으로 하는 정전보호회로.※참고사항:최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-065862 | 1989-03-20 | ||
JP1065862A JPH0766958B2 (ja) | 1989-03-20 | 1989-03-20 | 静電保護回路 |
JP65862 | 1989-03-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900015308A true KR900015308A (ko) | 1990-10-26 |
KR930009026B1 KR930009026B1 (ko) | 1993-09-18 |
Family
ID=13299242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900003733A KR930009026B1 (ko) | 1989-03-20 | 1990-03-20 | 정전보호회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5059831A (ko) |
EP (1) | EP0388896B1 (ko) |
JP (1) | JPH0766958B2 (ko) |
KR (1) | KR930009026B1 (ko) |
DE (1) | DE69030977T2 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5561373A (en) * | 1990-10-09 | 1996-10-01 | Fujitsu Limited | Method and device for detecting electrostatic stress applied to a product semiconductor device during each production process |
US5311391A (en) * | 1993-05-04 | 1994-05-10 | Hewlett-Packard Company | Electrostatic discharge protection circuit with dynamic triggering |
KR100337925B1 (ko) * | 1997-06-28 | 2002-11-18 | 주식회사 하이닉스반도체 | 반도체 정전기 보호회로 |
US6693780B2 (en) | 2001-08-02 | 2004-02-17 | Koninklijke Philips Electronics N.V. | ESD protection devices for a differential pair of transistors |
TWI745540B (zh) * | 2018-02-05 | 2021-11-11 | 力智電子股份有限公司 | 半導體裝置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3512009A (en) * | 1967-05-22 | 1970-05-12 | Nasa | Exclusive-or digital logic module |
US3742250A (en) * | 1971-04-07 | 1973-06-26 | Signetics Corp | Active region logic circuit |
US3699362A (en) * | 1971-05-27 | 1972-10-17 | Ibm | Transistor logic circuit |
US4028564A (en) * | 1971-09-22 | 1977-06-07 | Robert Bosch G.M.B.H. | Compensated monolithic integrated current source |
NL8006975A (nl) * | 1980-12-22 | 1982-07-16 | Delta Kabel Bv | Elektronische schakelaar. |
JPS58101311A (ja) * | 1981-12-11 | 1983-06-16 | Toshiba Corp | 多相電圧電流変換回路 |
JPS59103567A (ja) * | 1982-12-01 | 1984-06-15 | Fuji Electric Co Ltd | トランジスタの過電流保護回路 |
JPS6097659A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体集積回路 |
JPS60241252A (ja) * | 1984-05-16 | 1985-11-30 | Sanyo Electric Co Ltd | 半導体集積回路装置 |
DE3420535C2 (de) * | 1984-06-01 | 1986-04-30 | Anton Piller GmbH & Co KG, 3360 Osterode | Halbleiter-Modul für eine schnelle Schaltanordnung |
JPS60263502A (ja) * | 1984-06-08 | 1985-12-27 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US4616142A (en) * | 1984-12-31 | 1986-10-07 | Sundstrand Corporation | Method of operating parallel-connected semiconductor switch elements |
US4761565A (en) * | 1987-06-29 | 1988-08-02 | Eastman Kodak Company | CCD clock driver circuit |
JPH01129451A (ja) * | 1987-11-16 | 1989-05-22 | Fujitsu Ltd | 半導体装置 |
US4808461A (en) * | 1987-12-14 | 1989-02-28 | Foster-Miller, Inc. | Composite structure reinforcement |
-
1989
- 1989-03-20 JP JP1065862A patent/JPH0766958B2/ja not_active Expired - Fee Related
-
1990
- 1990-03-16 US US07/494,315 patent/US5059831A/en not_active Expired - Lifetime
- 1990-03-20 DE DE69030977T patent/DE69030977T2/de not_active Expired - Fee Related
- 1990-03-20 EP EP90105250A patent/EP0388896B1/en not_active Expired - Lifetime
- 1990-03-20 KR KR1019900003733A patent/KR930009026B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0766958B2 (ja) | 1995-07-19 |
DE69030977D1 (de) | 1997-08-07 |
EP0388896A3 (en) | 1991-10-09 |
EP0388896A2 (en) | 1990-09-26 |
DE69030977T2 (de) | 1997-11-27 |
JPH02246145A (ja) | 1990-10-01 |
EP0388896B1 (en) | 1997-07-02 |
KR930009026B1 (ko) | 1993-09-18 |
US5059831A (en) | 1991-10-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20030901 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |