KR900007079A - Method of manufacturing thin film transistor with inclined gate electrode - Google Patents

Method of manufacturing thin film transistor with inclined gate electrode Download PDF

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Publication number
KR900007079A
KR900007079A KR1019880014301A KR880014301A KR900007079A KR 900007079 A KR900007079 A KR 900007079A KR 1019880014301 A KR1019880014301 A KR 1019880014301A KR 880014301 A KR880014301 A KR 880014301A KR 900007079 A KR900007079 A KR 900007079A
Authority
KR
South Korea
Prior art keywords
thin film
gate electrode
film transistor
deposited
manufacturing thin
Prior art date
Application number
KR1019880014301A
Other languages
Korean (ko)
Other versions
KR970000461B1 (en
Inventor
박원규
소회섭
Original Assignee
최근선
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 최근선, 주식회사 금성사 filed Critical 최근선
Priority to KR1019880014301A priority Critical patent/KR970000461B1/en
Publication of KR900007079A publication Critical patent/KR900007079A/en
Application granted granted Critical
Publication of KR970000461B1 publication Critical patent/KR970000461B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

내용 없음No content

Description

경사진 게이트전극을 갖는 박막트랜지스터의 제조방법Method of manufacturing thin film transistor with inclined gate electrode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 박막트랜지스터의 제조공정을 차례로 나타낸 단면도이고,1 is a cross-sectional view sequentially showing a manufacturing process of a thin film transistor according to the present invention,

제2도는 본 발명에 따른 전해에칭 구조를 나타낸 개략도이다.2 is a schematic view showing an electrolytic etching structure according to the present invention.

Claims (2)

유리기판상에 게이트전극, 절연막, 비정질실리콘막 및 n+형 비정질실리콘막이 차례로 적층되고, 그 위에 소스전극과 드레인전극이 형성되어 있는 박막트랜지스터에 있어서, 게이트전극이 먼저 알루미늄을 증착하고, 그 위에 크롬을 증착하여 전해에칭함으로써 경사지게 형성되는 것을 특징으로 하는 박막트랜지스터의 제조방법.In a thin film transistor in which a gate electrode, an insulating film, an amorphous silicon film, and an n + type amorphous silicon film are sequentially stacked on a glass substrate, and a source electrode and a drain electrode are formed thereon, the gate electrode first deposits aluminum, and then chromium is deposited thereon. Method of manufacturing a thin film transistor, characterized in that formed by inclining by depositing electrolytic etching. 제1항에 있어서, 게이트전극이 티타늄, 니켈, 황동, 청동, 코발트, 구리, 알루미늄 합금, 주석, 아연, 철 및 이들의 합금중에서 1종을 선택하여 증착하고, 그 위에 크롬을 증착하여 전해에칭하는 것을 특징으로 하는 박막트랜지스터의 제조방법.The method of claim 1, wherein the gate electrode is selected from one of titanium, nickel, brass, bronze, cobalt, copper, aluminum alloys, tin, zinc, iron, and alloys thereof, and deposited thereon, and chromium is deposited thereon. Method for manufacturing a thin film transistor, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880014301A 1988-10-31 1988-10-31 Thin film transistor & method of manufacturing the same KR970000461B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880014301A KR970000461B1 (en) 1988-10-31 1988-10-31 Thin film transistor & method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880014301A KR970000461B1 (en) 1988-10-31 1988-10-31 Thin film transistor & method of manufacturing the same

Publications (2)

Publication Number Publication Date
KR900007079A true KR900007079A (en) 1990-05-09
KR970000461B1 KR970000461B1 (en) 1997-01-11

Family

ID=19278937

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880014301A KR970000461B1 (en) 1988-10-31 1988-10-31 Thin film transistor & method of manufacturing the same

Country Status (1)

Country Link
KR (1) KR970000461B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459801B1 (en) * 1996-06-14 2005-01-17 엠비티홀딩에이.지 Concrete spraying additives

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459801B1 (en) * 1996-06-14 2005-01-17 엠비티홀딩에이.지 Concrete spraying additives

Also Published As

Publication number Publication date
KR970000461B1 (en) 1997-01-11

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