KR930005253A - Manufacturing Method of Thin Film Transistor - Google Patents

Manufacturing Method of Thin Film Transistor Download PDF

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Publication number
KR930005253A
KR930005253A KR1019910014637A KR910014637A KR930005253A KR 930005253 A KR930005253 A KR 930005253A KR 1019910014637 A KR1019910014637 A KR 1019910014637A KR 910014637 A KR910014637 A KR 910014637A KR 930005253 A KR930005253 A KR 930005253A
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KR
South Korea
Prior art keywords
layer
metal
manufacturing
thin film
film transistor
Prior art date
Application number
KR1019910014637A
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Korean (ko)
Other versions
KR940008226B1 (en
Inventor
박원규
Original Assignee
이헌조
주식회사 금성사
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Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019910014637A priority Critical patent/KR940008226B1/en
Publication of KR930005253A publication Critical patent/KR930005253A/en
Application granted granted Critical
Publication of KR940008226B1 publication Critical patent/KR940008226B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

내용 없음.No content.

Description

박막 트랜지스터의 제조방법Manufacturing Method of Thin Film Transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 박막 트랜지스터의 단면도이다.2 is a cross-sectional view of a thin film transistor according to the present invention.

Claims (3)

기판상에 실리콘 산화막을 입히고, 상기 실리콘 산화막에 게이트 영역을 한정하여 홈을 형성하며, 형성된 홈에 화학 증착법에 의한 금속층을 증착하여 게이트전극을 형성하는 공정과, 그위에 절연층, 비정질실리콘층, n+형 비정실리콘층, 금속 전극층을 차례로 형성하는 공정으로 이루어진 박막 트랜지스터의 제조방법.Forming a gate electrode by coating a silicon oxide film on a substrate, forming a groove by defining a gate region in the silicon oxide film, and depositing a metal layer by a chemical vapor deposition method on the formed groove, an insulating layer, an amorphous silicon layer thereon, A method of manufacturing a thin film transistor comprising a step of sequentially forming an n + type amorphous silicon layer and a metal electrode layer. 제1항에 있어서, 상기 게이트 전극용 금속으로 알루미늄, 탄탈, 크롬, 몰리브덴, 텅스텐, 은, 구리 또는 이 금속들의 합금이 사용되는 것을 특징으로 하는 박막 트랜지스터의 제조방법.The method of claim 1, wherein aluminum, tantalum, chromium, molybdenum, tungsten, silver, copper, or an alloy of these metals is used as the gate electrode metal. 제1항에 있어서, 상기 게이트 전극용 금속으로 타이타늄 실리사이드, 텅스텐 실리사이드가 사용되는 것을 특징으로 하는 박막 트랜지스터의 제조방법.The method of claim 1, wherein titanium silicide and tungsten silicide are used as the gate electrode metal. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910014637A 1991-08-23 1991-08-23 Manufacturing method of thin film transistor KR940008226B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910014637A KR940008226B1 (en) 1991-08-23 1991-08-23 Manufacturing method of thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014637A KR940008226B1 (en) 1991-08-23 1991-08-23 Manufacturing method of thin film transistor

Publications (2)

Publication Number Publication Date
KR930005253A true KR930005253A (en) 1993-03-23
KR940008226B1 KR940008226B1 (en) 1994-09-08

Family

ID=19319014

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014637A KR940008226B1 (en) 1991-08-23 1991-08-23 Manufacturing method of thin film transistor

Country Status (1)

Country Link
KR (1) KR940008226B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210073874A (en) * 2019-12-11 2021-06-21 주식회사 포스코 Dust suppressants and dust suppressing method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210073874A (en) * 2019-12-11 2021-06-21 주식회사 포스코 Dust suppressants and dust suppressing method using the same

Also Published As

Publication number Publication date
KR940008226B1 (en) 1994-09-08

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