KR870011700A - Thin film transistor - Google Patents

Thin film transistor Download PDF

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Publication number
KR870011700A
KR870011700A KR1019860004005A KR860004005A KR870011700A KR 870011700 A KR870011700 A KR 870011700A KR 1019860004005 A KR1019860004005 A KR 1019860004005A KR 860004005 A KR860004005 A KR 860004005A KR 870011700 A KR870011700 A KR 870011700A
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KR
South Korea
Prior art keywords
thin film
film transistor
semiconductor layer
amorphous semiconductor
insulating film
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KR1019860004005A
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Korean (ko)
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KR890003414B1 (en
Inventor
최광수
Original Assignee
삼성전관 주식회사
김정배
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Application filed by 삼성전관 주식회사, 김정배 filed Critical 삼성전관 주식회사
Priority to KR1019860004005A priority Critical patent/KR890003414B1/en
Publication of KR870011700A publication Critical patent/KR870011700A/en
Application granted granted Critical
Publication of KR890003414B1 publication Critical patent/KR890003414B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor

Abstract

내용 없음No content

Description

박막 트랜지스터Thin film transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 기술에 의한 박막트랜지스터의 구조를 나타낸 단면도.1 is a cross-sectional view showing the structure of a thin film transistor according to the prior art.

제2도는 (A)-(D)는 본 발명에 의한 박막트랜지스터의 제조공정을 설명하기 위한 도면.2 is a view for explaining the manufacturing process of the thin film transistor according to the present invention (A)-(D).

Claims (2)

유리기판(10)상에 게이트전극(20)이 형성되어 있으며, 그위에 쵬소한 a-SIN의 절연막(30), 소스 및 드레인전극(50,60), 투명도전막(70)과 보호막(80)이 형성되어 있는 박막트랜지스터에 있어서, a-Si의 비정질반도체층(40)이 상기한 절연막(30)과 전극 및 보호막(50,60,70,80) 사이에 위치한 상태로 표시패널전체에 걸쳐 증착형성되어 있는 것을 특징으로 하는 박막트랜지스터.The gate electrode 20 is formed on the glass substrate 10, and the a-SIN insulating film 30, the source and drain electrodes 50 and 60, the transparent conductive film 70 and the protective film 80 are formed thereon. In the formed thin film transistor, the a-Si amorphous semiconductor layer 40 is deposited on the entire display panel with the a-Si amorphous semiconductor layer 40 positioned between the insulating film 30, the electrode, and the protective films 50, 60, 70, and 80. A thin film transistor, characterized in that formed. 제1항에 있어서, 상기한 비정질 반도체층(40)의 두께가 300-1000A。인 것을 특징으로 하는 박막트랜지스터.The thin film transistor according to claim 1, wherein the amorphous semiconductor layer (40) has a thickness of 300-1000A. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860004005A 1986-05-22 1986-05-22 Thin film transister KR890003414B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019860004005A KR890003414B1 (en) 1986-05-22 1986-05-22 Thin film transister

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860004005A KR890003414B1 (en) 1986-05-22 1986-05-22 Thin film transister

Publications (2)

Publication Number Publication Date
KR870011700A true KR870011700A (en) 1987-12-26
KR890003414B1 KR890003414B1 (en) 1989-09-20

Family

ID=19250079

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860004005A KR890003414B1 (en) 1986-05-22 1986-05-22 Thin film transister

Country Status (1)

Country Link
KR (1) KR890003414B1 (en)

Also Published As

Publication number Publication date
KR890003414B1 (en) 1989-09-20

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