KR900007079A - 경사진 게이트전극을 갖는 박막트랜지스터의 제조방법 - Google Patents
경사진 게이트전극을 갖는 박막트랜지스터의 제조방법 Download PDFInfo
- Publication number
- KR900007079A KR900007079A KR1019880014301A KR880014301A KR900007079A KR 900007079 A KR900007079 A KR 900007079A KR 1019880014301 A KR1019880014301 A KR 1019880014301A KR 880014301 A KR880014301 A KR 880014301A KR 900007079 A KR900007079 A KR 900007079A
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- gate electrode
- film transistor
- deposited
- manufacturing thin
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims description 5
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000000866 electrolytic etching Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910001369 Brass Inorganic materials 0.000 claims 1
- 229910000906 Bronze Inorganic materials 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000010951 brass Substances 0.000 claims 1
- 239000010974 bronze Substances 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 박막트랜지스터의 제조공정을 차례로 나타낸 단면도이고,
제2도는 본 발명에 따른 전해에칭 구조를 나타낸 개략도이다.
Claims (2)
- 유리기판상에 게이트전극, 절연막, 비정질실리콘막 및 n+형 비정질실리콘막이 차례로 적층되고, 그 위에 소스전극과 드레인전극이 형성되어 있는 박막트랜지스터에 있어서, 게이트전극이 먼저 알루미늄을 증착하고, 그 위에 크롬을 증착하여 전해에칭함으로써 경사지게 형성되는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제1항에 있어서, 게이트전극이 티타늄, 니켈, 황동, 청동, 코발트, 구리, 알루미늄 합금, 주석, 아연, 철 및 이들의 합금중에서 1종을 선택하여 증착하고, 그 위에 크롬을 증착하여 전해에칭하는 것을 특징으로 하는 박막트랜지스터의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880014301A KR970000461B1 (ko) | 1988-10-31 | 1988-10-31 | 경사진 게이트전극을 갖는 박막트랜지스터의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880014301A KR970000461B1 (ko) | 1988-10-31 | 1988-10-31 | 경사진 게이트전극을 갖는 박막트랜지스터의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR900007079A true KR900007079A (ko) | 1990-05-09 |
| KR970000461B1 KR970000461B1 (ko) | 1997-01-11 |
Family
ID=19278937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880014301A KR970000461B1 (ko) | 1988-10-31 | 1988-10-31 | 경사진 게이트전극을 갖는 박막트랜지스터의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970000461B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100459801B1 (ko) * | 1996-06-14 | 2005-01-17 | 엠비티홀딩에이.지 | 콘크리트 분사 첨가제 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501094B1 (en) * | 1997-06-11 | 2002-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising a bottom gate type thin film transistor |
-
1988
- 1988-10-31 KR KR1019880014301A patent/KR970000461B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100459801B1 (ko) * | 1996-06-14 | 2005-01-17 | 엠비티홀딩에이.지 | 콘크리트 분사 첨가제 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970000461B1 (ko) | 1997-01-11 |
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