KR910013488A - Thin Film Transistor Driven by DIFET - Google Patents

Thin Film Transistor Driven by DIFET Download PDF

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Publication number
KR910013488A
KR910013488A KR1019890019109A KR890019109A KR910013488A KR 910013488 A KR910013488 A KR 910013488A KR 1019890019109 A KR1019890019109 A KR 1019890019109A KR 890019109 A KR890019109 A KR 890019109A KR 910013488 A KR910013488 A KR 910013488A
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KR
South Korea
Prior art keywords
difet
electrode
thin film
film transistor
amorphous silicon
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Application number
KR1019890019109A
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Korean (ko)
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KR960013506B1 (en
Inventor
안인호
Original Assignee
이헌조
주식회사 금성사
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Priority to KR1019890019109A priority Critical patent/KR960013506B1/en
Publication of KR910013488A publication Critical patent/KR910013488A/en
Application granted granted Critical
Publication of KR960013506B1 publication Critical patent/KR960013506B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming

Abstract

내용 없음.No content.

Description

DIFET에 의해 구동되는 박막 트랜지스터Thin Film Transistor Driven by DIFET

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 DIFET에 의해 구동되는 박막 트랜지스터의 단면도.3 is a cross-sectional view of a thin film transistor driven by the DIFET of the present invention.

Claims (1)

유리기판(1)상에 크롬 또는 탄탈늄(Ta)금속막을 증착하고 그위에 제1게이트전극 G1(2), 금속 Pad층(3), 제2게이트전극(4)을 형성하고 이와같이 형성된 제1게이트전극 G1(2)과 제2게이트전극(4) 위에 게이트 절연층(5)을 형성한후 계속해서 게이트 절연층(5)상에 비정질 실리콘층(6)을 적층하고 DIFET소자영역(13)의 일측 및 박막 트랜지스터소자영역(14)인 비정질 실리콘층(6)위에는 비정질 실리콘층(7)을 형성시키고 나머지 DIFET소자 영역의 일측인 비정질 실리콘층(6)위에는 P+비정질 실리콘층(8)을 형성시킨후, 이렇게 형성된 상기 층위에 알루미늄 또는 크롬금속을 증착하고 그위에 애노드전극A(9), 캐소드전극 K(10) 소오스전극 S(11), 드레인전극 D(12)을 형성하여 금속 Pad층(3)을 통하여 DIFET소자의 캐소드전극 K(10)과 박막트랜지스터(14)의 소오스전극 S(11)이 상호 전기적으로 접촉되도록 구성됨을 특징으로하는 DIFET에 의해 구동되는 박막트랜지스터.Depositing a chromium or tantalum (Ta) metal film on the glass substrate 1, and forming a first gate electrode G 1 (2), a metal pad layer (3), and a second gate electrode (4) thereon. After forming the gate insulating layer 5 on the one gate electrode G 1 (2) and the second gate electrode 4, the amorphous silicon layer 6 is subsequently laminated on the gate insulating layer 5, and the DIFET device region ( 13, an amorphous silicon layer 7 is formed on the amorphous silicon layer 6, which is one side and the thin film transistor element region 14, and a P + amorphous silicon layer 8 is formed on the amorphous silicon layer 6, which is one side of the remaining DIFET element region. ), And then aluminum or chromium metal is deposited on the layer thus formed, and the anode electrode A (9), the cathode electrode K (10), the source electrode S (11), and the drain electrode D (12) are formed thereon. The cathode electrode K (10) of the DIFET device and the source electrode S (11) of the thin film transistor 14 are electrically connected to each other through the pad layer 3. A thin film transistor driven by a DIFET, characterized in that it is configured to be in contact with each other. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890019109A 1989-12-21 1989-12-21 Thin film transistor drived by difet KR960013506B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890019109A KR960013506B1 (en) 1989-12-21 1989-12-21 Thin film transistor drived by difet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890019109A KR960013506B1 (en) 1989-12-21 1989-12-21 Thin film transistor drived by difet

Publications (2)

Publication Number Publication Date
KR910013488A true KR910013488A (en) 1991-08-08
KR960013506B1 KR960013506B1 (en) 1996-10-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890019109A KR960013506B1 (en) 1989-12-21 1989-12-21 Thin film transistor drived by difet

Country Status (1)

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KR (1) KR960013506B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101822012B1 (en) 2010-12-07 2018-01-26 삼성디스플레이 주식회사 Organic light emitting display device and method for manufacturing the same

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Publication number Publication date
KR960013506B1 (en) 1996-10-05

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