KR960035876A - Capacitor dielectric film formation method of semiconductor device - Google Patents

Capacitor dielectric film formation method of semiconductor device Download PDF

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Publication number
KR960035876A
KR960035876A KR1019950004959A KR19950004959A KR960035876A KR 960035876 A KR960035876 A KR 960035876A KR 1019950004959 A KR1019950004959 A KR 1019950004959A KR 19950004959 A KR19950004959 A KR 19950004959A KR 960035876 A KR960035876 A KR 960035876A
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KR
South Korea
Prior art keywords
dielectric film
lower electrode
forming
semiconductor device
capacitor dielectric
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Application number
KR1019950004959A
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Korean (ko)
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KR0161397B1 (en
Inventor
박인성
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김광호
삼성전자 주식회사
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Priority to KR1019950004959A priority Critical patent/KR0161397B1/en
Publication of KR960035876A publication Critical patent/KR960035876A/en
Application granted granted Critical
Publication of KR0161397B1 publication Critical patent/KR0161397B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

커패시터 유전체막 형성 방법이 개시되어 있다. 본 발명은 반도체기판 상에 하부전극 형성하는 단계와, 상에 하부전극을 p-NH3전처리하는 단계와, 상기 전처리된 하부전극 상에 유전체막을 형성하는 단계와, 상기 유전체막 상에 상부전극을 형성하는 단계를 구비한다. 본 발명에 의하면, 하부전극에 형성되는 유전막을 평판하고 균일하게 형성함으로써, 상부전극을 통해 가해지는 전류가 국부적으로 집중하여 누설전류가 증가되는 현상을 방지할 수 있다.A method of forming a capacitor dielectric film is disclosed. The present invention provides a method of forming a lower electrode on a semiconductor substrate, a p-NH 3 pretreatment of a lower electrode on a semiconductor substrate, forming a dielectric film on the pretreated lower electrode, and forming an upper electrode on the dielectric film. It is equipped with a step. According to the present invention, by forming the dielectric film formed on the lower electrode flat and uniform, it is possible to prevent the phenomenon that the leakage current increases by locally concentrating the current applied through the upper electrode.

Description

반도체 장치의 커패시터 유전체막 형성방법Capacitor dielectric film formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1A도 내지 제1C도는 본 발명에 의한 반도체 장치의 커패시터 유전체막 형성방법의 일예를 도시한 도면들이다.1A to 1C are diagrams showing an example of a method of forming a capacitor dielectric film in a semiconductor device according to the present invention.

Claims (6)

반도체 기판 상에 하부전극을 형성하는 단계; 상기 하부전극을 p-NH3 전처리하는 단계; 상기 전처리된 하부전극 상에 유전체막을 형성하는 단계; 및 상기 유전체막 상에 상부전극을 형성하는 단계를 구비하는 반도체 장치의 커패시터 유전체막 제조방법.Forming a lower electrode on the semiconductor substrate; P-NH 3 pretreatment of the lower electrode; Forming a dielectric film on the pretreated lower electrode; And forming an upper electrode on the dielectric film. 제1항에 있어서, 상기 하부전극은 TiN 또는 WN을 이용하여 형성하는 것을 특징으로 하는 반도체 장치의 커패시터 유전체막 제조방법.The method of claim 1, wherein the lower electrode is formed using TiN or WN. 제1항에 있어서, 상기 p-NH3 처리는 100~500℃의 온도, 50~1000W의 출력조건으로 수행하는 것을 특징으로 하는 반도체 장치의 커패시터 제조방법.The method of claim 1, wherein the p-NH 3 process is performed at a temperature of 100 to 500 ° C. and an output condition of 50 to 1000 W. 7. 제1항에 있어서, 상기 유전체막은 탄탈륨 산화막(Ta205)으로 형성하는 것을 특징으로 하는 반도체 장치의 커패시터 유전체막 제조방법.The method of manufacturing a capacitor dielectric film of a semiconductor device according to claim 1, wherein said dielectric film is formed of a tantalum oxide film (Ta205). 제1항에 있어서, 상기 하부전극은 TiN 또는 WN 및 폴리실리콘중에서 선택된 어느 하나로 형성하는 것을 특징으로 하는 반도체 장치의 커패시터 유전체막 제조방법.The method of claim 1, wherein the lower electrode is formed of one selected from TiN, WN, and polysilicon. 제1항에 있어서, 상기 하부전극은 TiN과 폴리실리콘 또는 WN과 폴리실리콘의 이중막으로 형성하는 것을 특징으로 하는 반도체 장치의 커패시터 유전체막 제조방법.The method of claim 1, wherein the lower electrode is formed of a double layer of TiN and polysilicon or WN and polysilicon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950004959A 1995-03-10 1995-03-10 Method of manufacturing capacitor in a semiconductor device KR0161397B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950004959A KR0161397B1 (en) 1995-03-10 1995-03-10 Method of manufacturing capacitor in a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950004959A KR0161397B1 (en) 1995-03-10 1995-03-10 Method of manufacturing capacitor in a semiconductor device

Publications (2)

Publication Number Publication Date
KR960035876A true KR960035876A (en) 1996-10-28
KR0161397B1 KR0161397B1 (en) 1999-02-01

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KR1019950004959A KR0161397B1 (en) 1995-03-10 1995-03-10 Method of manufacturing capacitor in a semiconductor device

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100384846B1 (en) * 2000-12-04 2003-05-22 주식회사 하이닉스반도체 Method for fabricating capacitor
KR100385952B1 (en) * 2001-01-19 2003-06-02 삼성전자주식회사 A semiconductor capacitor having tantalum oxide as dielctric film and formation method thereof
KR100492992B1 (en) * 1997-12-01 2006-04-21 삼성전자주식회사 The method for fabricating capacitor of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100492992B1 (en) * 1997-12-01 2006-04-21 삼성전자주식회사 The method for fabricating capacitor of semiconductor device
KR100384846B1 (en) * 2000-12-04 2003-05-22 주식회사 하이닉스반도체 Method for fabricating capacitor
KR100385952B1 (en) * 2001-01-19 2003-06-02 삼성전자주식회사 A semiconductor capacitor having tantalum oxide as dielctric film and formation method thereof
US6734480B2 (en) 2001-01-19 2004-05-11 Samsung Electronics Co., Ltd. Semiconductor capacitors having tantalum oxide layers
US6884675B2 (en) 2001-01-19 2005-04-26 Samsung Electronics Co., Ltd. Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the same

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Publication number Publication date
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