KR880004564A - 반도체 집적회로 - Google Patents

반도체 집적회로 Download PDF

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Publication number
KR880004564A
KR880004564A KR1019870004172A KR870004172A KR880004564A KR 880004564 A KR880004564 A KR 880004564A KR 1019870004172 A KR1019870004172 A KR 1019870004172A KR 870004172 A KR870004172 A KR 870004172A KR 880004564 A KR880004564 A KR 880004564A
Authority
KR
South Korea
Prior art keywords
power supply
circuit
semiconductor integrated
voltage
integrated circuit
Prior art date
Application number
KR1019870004172A
Other languages
English (en)
Other versions
KR900003834B1 (ko
Inventor
요오이찌 도비다
Original Assignee
미쓰비시 뎅끼 가부시끼가이샤
시기모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅끼 가부시끼가이샤, 시기모리야 filed Critical 미쓰비시 뎅끼 가부시끼가이샤
Publication of KR880004564A publication Critical patent/KR880004564A/ko
Application granted granted Critical
Publication of KR900003834B1 publication Critical patent/KR900003834B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

내용 없음

Description

반도체 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 일실시예를 표시한 회로도.
제 3 도 내지 제 5 도는 본 발명의 변형예를 표시한 회로도.
* 도면의 주요부분에 대한 부호의 설명
1 : 주회로 2, 3a : 내부전원단자
3, 4 : 외부전원단자 9 : 외부입력단자
30 : 전원회로 40 : 제어회로

Claims (4)

  1. 한 벌의 외부전원단자에 부여되는 외부전원전압보다 낮은 내부전원전압으로 통상 동작하도록 설정된 주회로와 상기 외부전원전압이 부여되어서 상기 내부전원전압을 상기 주회로의 한쌍의 내부전원단자에 부여하는 전원회로와 상기 주회로에 신호를 부여하는 외부입력단자의 전위를 검지하고 이 전위가 상기 통상 동작범위 밖의 소정구역내에 있을 경우에 상기 내부전원전압보다 높은 제 1의 전압을 상기 내부전원단자에 부여하도록 상기 전원회로를 제어하는 제어회로와를 구비한 반도체 집적회로.
  2. 제 1 항에 있어서 복수의 외부입력단자의 전위가 동시에 각각 소정구역내에 있는 경우에만 제 1의 전압을 부여하도록 한 것을 특징으로 하는 반도체 집적회로.
  3. 제 2 항에 있어서 상호 중합하지 않는 2개의 소정구역을 보유하는 것을 특징으로 하는 반도체 집적회로.
  4. 제 1 항 내지 제 3 항 중의 어느 한 항에 있어서 전원회로에 절연게이트 전계효과 트랜지스터를 사용하고 다시 상기 트랜지스터의 드레시 홀드값 전압강하에 의한 번인전압 저하분을 배제하도록 상기 전원회로를 구성한 것을 특징으로 하는 반도체 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870004172A 1986-09-11 1987-04-29 반도체 집적회로 KR900003834B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61216710A JPS6370451A (ja) 1986-09-11 1986-09-11 半導体集積回路
JP60-216710 1986-09-11

Publications (2)

Publication Number Publication Date
KR880004564A true KR880004564A (ko) 1988-06-07
KR900003834B1 KR900003834B1 (ko) 1990-06-02

Family

ID=16692706

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870004172A KR900003834B1 (ko) 1986-09-11 1987-04-29 반도체 집적회로

Country Status (4)

Country Link
US (1) US4806788A (ko)
JP (1) JPS6370451A (ko)
KR (1) KR900003834B1 (ko)
DE (1) DE3722421A1 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2904276B2 (ja) * 1987-02-24 1999-06-14 沖電気工業株式会社 半導体集積回路装置
JPH0777079B2 (ja) * 1987-07-31 1995-08-16 株式会社東芝 不揮発性半導体記憶装置
JPS6455857A (en) * 1987-08-26 1989-03-02 Nec Corp Semiconductor integrated device
JPH02197163A (ja) * 1989-01-26 1990-08-03 Nec Ic Microcomput Syst Ltd 半導体記憶装置
JPH0346188A (ja) * 1989-07-13 1991-02-27 Mitsubishi Electric Corp 半導体記憶回路
JP2809768B2 (ja) * 1989-11-30 1998-10-15 株式会社東芝 基準電位発生回路
US5283762A (en) * 1990-05-09 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device containing voltage converting circuit and operating method thereof
KR930009148B1 (ko) * 1990-09-29 1993-09-23 삼성전자 주식회사 전원전압 조정회로
KR940008286B1 (ko) * 1991-08-19 1994-09-09 삼성전자 주식회사 내부전원발생회로
JPH05314769A (ja) * 1992-05-13 1993-11-26 Mitsubishi Electric Corp 半導体集積回路装置
US5954832A (en) * 1997-03-14 1999-09-21 International Business Machines Corporation Method and system for performing non-standard insitu burn-in testings

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5849885B2 (ja) * 1976-03-16 1983-11-07 日本電気株式会社 定電圧回路
US4300061A (en) * 1979-03-15 1981-11-10 National Semiconductor Corporation CMOS Voltage regulator circuit
JPS5772429A (en) * 1980-10-22 1982-05-06 Toshiba Corp Semiconductor integrated circuit device
US4585955B1 (en) * 1982-12-15 2000-11-21 Tokyo Shibaura Electric Co Internally regulated power voltage circuit for mis semiconductor integrated circuit
JPS60103827A (ja) * 1983-11-11 1985-06-08 Fujitsu Ltd 電圧変換回路
JPS60176121A (ja) * 1984-02-22 1985-09-10 Toshiba Corp 電圧降下回路

Also Published As

Publication number Publication date
JPH0482188B2 (ko) 1992-12-25
DE3722421C2 (ko) 1990-03-22
KR900003834B1 (ko) 1990-06-02
DE3722421A1 (de) 1988-03-24
US4806788A (en) 1989-02-21
JPS6370451A (ja) 1988-03-30

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