KR880004564A - 반도체 집적회로 - Google Patents
반도체 집적회로 Download PDFInfo
- Publication number
- KR880004564A KR880004564A KR1019870004172A KR870004172A KR880004564A KR 880004564 A KR880004564 A KR 880004564A KR 1019870004172 A KR1019870004172 A KR 1019870004172A KR 870004172 A KR870004172 A KR 870004172A KR 880004564 A KR880004564 A KR 880004564A
- Authority
- KR
- South Korea
- Prior art keywords
- power supply
- circuit
- semiconductor integrated
- voltage
- integrated circuit
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 5
- 230000005669 field effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
- G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Tests Of Electronic Circuits (AREA)
- Logic Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 일실시예를 표시한 회로도.
제 3 도 내지 제 5 도는 본 발명의 변형예를 표시한 회로도.
* 도면의 주요부분에 대한 부호의 설명
1 : 주회로 2, 3a : 내부전원단자
3, 4 : 외부전원단자 9 : 외부입력단자
30 : 전원회로 40 : 제어회로
Claims (4)
- 한 벌의 외부전원단자에 부여되는 외부전원전압보다 낮은 내부전원전압으로 통상 동작하도록 설정된 주회로와 상기 외부전원전압이 부여되어서 상기 내부전원전압을 상기 주회로의 한쌍의 내부전원단자에 부여하는 전원회로와 상기 주회로에 신호를 부여하는 외부입력단자의 전위를 검지하고 이 전위가 상기 통상 동작범위 밖의 소정구역내에 있을 경우에 상기 내부전원전압보다 높은 제 1의 전압을 상기 내부전원단자에 부여하도록 상기 전원회로를 제어하는 제어회로와를 구비한 반도체 집적회로.
- 제 1 항에 있어서 복수의 외부입력단자의 전위가 동시에 각각 소정구역내에 있는 경우에만 제 1의 전압을 부여하도록 한 것을 특징으로 하는 반도체 집적회로.
- 제 2 항에 있어서 상호 중합하지 않는 2개의 소정구역을 보유하는 것을 특징으로 하는 반도체 집적회로.
- 제 1 항 내지 제 3 항 중의 어느 한 항에 있어서 전원회로에 절연게이트 전계효과 트랜지스터를 사용하고 다시 상기 트랜지스터의 드레시 홀드값 전압강하에 의한 번인전압 저하분을 배제하도록 상기 전원회로를 구성한 것을 특징으로 하는 반도체 집적회로.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61216710A JPS6370451A (ja) | 1986-09-11 | 1986-09-11 | 半導体集積回路 |
JP60-216710 | 1986-09-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880004564A true KR880004564A (ko) | 1988-06-07 |
KR900003834B1 KR900003834B1 (ko) | 1990-06-02 |
Family
ID=16692706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870004172A KR900003834B1 (ko) | 1986-09-11 | 1987-04-29 | 반도체 집적회로 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4806788A (ko) |
JP (1) | JPS6370451A (ko) |
KR (1) | KR900003834B1 (ko) |
DE (1) | DE3722421A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2904276B2 (ja) * | 1987-02-24 | 1999-06-14 | 沖電気工業株式会社 | 半導体集積回路装置 |
JPH0777079B2 (ja) * | 1987-07-31 | 1995-08-16 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JPS6455857A (en) * | 1987-08-26 | 1989-03-02 | Nec Corp | Semiconductor integrated device |
JPH02197163A (ja) * | 1989-01-26 | 1990-08-03 | Nec Ic Microcomput Syst Ltd | 半導体記憶装置 |
JPH0346188A (ja) * | 1989-07-13 | 1991-02-27 | Mitsubishi Electric Corp | 半導体記憶回路 |
JP2809768B2 (ja) * | 1989-11-30 | 1998-10-15 | 株式会社東芝 | 基準電位発生回路 |
US5283762A (en) * | 1990-05-09 | 1994-02-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device containing voltage converting circuit and operating method thereof |
KR930009148B1 (ko) * | 1990-09-29 | 1993-09-23 | 삼성전자 주식회사 | 전원전압 조정회로 |
KR940008286B1 (ko) * | 1991-08-19 | 1994-09-09 | 삼성전자 주식회사 | 내부전원발생회로 |
JPH05314769A (ja) * | 1992-05-13 | 1993-11-26 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US5954832A (en) * | 1997-03-14 | 1999-09-21 | International Business Machines Corporation | Method and system for performing non-standard insitu burn-in testings |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5849885B2 (ja) * | 1976-03-16 | 1983-11-07 | 日本電気株式会社 | 定電圧回路 |
US4300061A (en) * | 1979-03-15 | 1981-11-10 | National Semiconductor Corporation | CMOS Voltage regulator circuit |
JPS5772429A (en) * | 1980-10-22 | 1982-05-06 | Toshiba Corp | Semiconductor integrated circuit device |
US4585955B1 (en) * | 1982-12-15 | 2000-11-21 | Tokyo Shibaura Electric Co | Internally regulated power voltage circuit for mis semiconductor integrated circuit |
JPS60103827A (ja) * | 1983-11-11 | 1985-06-08 | Fujitsu Ltd | 電圧変換回路 |
JPS60176121A (ja) * | 1984-02-22 | 1985-09-10 | Toshiba Corp | 電圧降下回路 |
-
1986
- 1986-09-11 JP JP61216710A patent/JPS6370451A/ja active Granted
-
1987
- 1987-04-29 KR KR1019870004172A patent/KR900003834B1/ko not_active IP Right Cessation
- 1987-07-06 US US07/070,254 patent/US4806788A/en not_active Expired - Lifetime
- 1987-07-07 DE DE19873722421 patent/DE3722421A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0482188B2 (ko) | 1992-12-25 |
DE3722421C2 (ko) | 1990-03-22 |
KR900003834B1 (ko) | 1990-06-02 |
DE3722421A1 (de) | 1988-03-24 |
US4806788A (en) | 1989-02-21 |
JPS6370451A (ja) | 1988-03-30 |
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G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060525 Year of fee payment: 17 |
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