KR880012008A - 전원절환회로 - Google Patents

전원절환회로 Download PDF

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Publication number
KR880012008A
KR880012008A KR1019880003528A KR880003528A KR880012008A KR 880012008 A KR880012008 A KR 880012008A KR 1019880003528 A KR1019880003528 A KR 1019880003528A KR 880003528 A KR880003528 A KR 880003528A KR 880012008 A KR880012008 A KR 880012008A
Authority
KR
South Korea
Prior art keywords
input terminal
potential
power supply
mosfet
power
Prior art date
Application number
KR1019880003528A
Other languages
English (en)
Other versions
KR910001380B1 (ko
Inventor
가즈히사 사키하마
다쿠야 후지모토
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR880012008A publication Critical patent/KR880012008A/ko
Application granted granted Critical
Publication of KR910001380B1 publication Critical patent/KR910001380B1/ko

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/141—Battery and back-up supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Stand-By Power Supply Arrangements (AREA)
  • Power Conversion In General (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

내용 없음

Description

전원절환회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 일실시예의 회로도.
제3도는 제1도의 MOSFET중에 존재하는 기생 다이오드의 작용설명도.
제4도는 본 발명에 따른 다른 실시예의 회로도.

Claims (1)

  1. 반도체 집적회로로 되어 있는 전자장치의 전원절환회로에 있어서, 소오스가 제1전원입력단자(1)에 접속되고 드레인 및 기판이 전원출력단자(18)에 접속된 제1MOSFET(7)와, 소스가 제2전원입력단자(2)에 접속되고 드레인 및 기판이 전원출력단자(3)에 접속 된 제2MOSFET(8), 제1전원입력단자(1)와 접지전위 사이에 접속된 저항(9), 제1전원 입력단자(1)와 제2전원입력단자(2)의 전위를 비교해서 그것에 따라 출력값을 결정하는 전압비교부(10) 및, 상기 제1전원입력단자(1)와 접지단자의 전위차가 상기 제2전원입력단자(2)와 접지단자의 전위차보다 큰 경우에는 상기 제1MOSFET(7)를 도통 상태로 해주고, 그 반대의 경우에는 제2MOSFET(8)를 도통 상태로 해주기 위해 상기 전원비교부(10)는 출력값에 따라 게이트 신호를 발생시키는 신호 발생부(11,12)로 이루어지면서, 상기 전압비교부(10)는 상기 제1전원입력단자(1)의 전위가 접지전위로 될 경우에 상기 전압비교부(10)에 있어서의 정상 전류를 저지시켜 주기 위한 제3MOSFET(32)와, 상기 제1전원 입력단자(1)의 전위가 접지전위로 될 경우에 상기 전압비교부(10)의 출력을 안정화시켜 주는 제4MOSFET(31)로 구성된 것을 특징으로 하는 전원절환회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880003528A 1987-03-31 1988-03-30 전원절환회로 KR910001380B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-78611 1987-03-31
JP62078611A JPS63245236A (ja) 1987-03-31 1987-03-31 電源切替回路

Publications (2)

Publication Number Publication Date
KR880012008A true KR880012008A (ko) 1988-10-31
KR910001380B1 KR910001380B1 (ko) 1991-03-04

Family

ID=13666676

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880003528A KR910001380B1 (ko) 1987-03-31 1988-03-30 전원절환회로

Country Status (5)

Country Link
US (1) US4806789A (ko)
EP (1) EP0287863B1 (ko)
JP (1) JPS63245236A (ko)
KR (1) KR910001380B1 (ko)
DE (1) DE3866929D1 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE40132E1 (en) * 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US5309040A (en) * 1989-11-07 1994-05-03 Fujitsu Limited Voltage reducing circuit
JP3147395B2 (ja) * 1990-05-07 2001-03-19 セイコーエプソン株式会社 集積回路及び電子機器
JP3379761B2 (ja) * 1991-07-02 2003-02-24 株式会社日立製作所 不揮発性記憶装置
JP2925422B2 (ja) * 1993-03-12 1999-07-28 株式会社東芝 半導体集積回路
JPH0778481A (ja) * 1993-04-30 1995-03-20 Sgs Thomson Microelectron Inc ダイレクトカレント和バンドギャップ電圧比較器
US5491443A (en) * 1994-01-21 1996-02-13 Delco Electronics Corporation Very low-input capacitance self-biased CMOS buffer amplifier
US5537077A (en) * 1994-12-23 1996-07-16 Advanced Micro Devices, Inc. Power supply dependent method of controlling a charge pump
KR0179845B1 (ko) * 1995-10-12 1999-04-15 문정환 메모리의 기판전압 공급제어회로
US5712590A (en) * 1995-12-21 1998-01-27 Dries; Michael F. Temperature stabilized bandgap voltage reference circuit
JP3169205B2 (ja) * 1996-01-19 2001-05-21 キヤノン株式会社 ピーク検出回路
US5748033A (en) * 1996-03-26 1998-05-05 Intel Corporation Differential power bus comparator
US5796274A (en) * 1996-10-16 1998-08-18 Lockheed Martin Corporation Fault tolerant MOSFET driver
FR2755316B1 (fr) * 1996-10-25 1999-01-15 Sgs Thomson Microelectronics Regulateur de tension a selection automatique d'une tension d'alimentation la plus elevee
US5886561A (en) * 1996-11-18 1999-03-23 Waferscale Integration, Inc. Backup battery switch
US6137192A (en) 1998-05-15 2000-10-24 Energenius, Inc. Embedded backup energy storage unit
EP1047193B1 (en) * 1999-04-21 2007-07-11 STMicroelectronics S.r.l. Multiplexer using a comparator
WO2002071612A2 (en) * 2001-01-09 2002-09-12 Broadcom Corporation Sub-micron high input voltage tolerant input output (i/o) circuit which accommodates large power supply variations
ATE337638T1 (de) * 2003-01-08 2006-09-15 Infineon Technologies Ag Stromversorgungsauswahlschaltung
FR2868220B1 (fr) * 2004-03-23 2008-02-15 Thales Sa Procede et dispositif d'alimentation electrique d'un equipement
US7508686B2 (en) 2005-06-29 2009-03-24 Sigmatel, Inc. System and method for configuring direct current converter
JP4850553B2 (ja) * 2006-03-28 2012-01-11 新日本無線株式会社 スイッチ回路
JP4902323B2 (ja) * 2006-11-20 2012-03-21 パナソニック株式会社 半導体スイッチ回路
JP5954091B2 (ja) * 2011-10-20 2016-07-20 ヤマハ株式会社 電源切換装置
CN104092451B (zh) * 2014-06-18 2017-01-25 无锡芯响电子科技有限公司 一种功耗切换控制电路

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4384350A (en) * 1980-11-03 1983-05-17 Fairchild Camera & Instrument Corp. MOS Battery backup controller for microcomputer random access memory
JPS5884522A (ja) * 1981-11-16 1983-05-20 Toshiba Corp レベル比較器
US4617473A (en) * 1984-01-03 1986-10-14 Intersil, Inc. CMOS backup power switching circuit

Also Published As

Publication number Publication date
KR910001380B1 (ko) 1991-03-04
JPH057931B2 (ko) 1993-01-29
US4806789A (en) 1989-02-21
DE3866929D1 (de) 1992-01-30
EP0287863A2 (en) 1988-10-26
EP0287863A3 (en) 1989-08-30
EP0287863B1 (en) 1991-12-18
JPS63245236A (ja) 1988-10-12

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