KR910017608A - 수지밀봉형 반도체장치 - Google Patents
수지밀봉형 반도체장치 Download PDFInfo
- Publication number
- KR910017608A KR910017608A KR1019910004845A KR910004845A KR910017608A KR 910017608 A KR910017608 A KR 910017608A KR 1019910004845 A KR1019910004845 A KR 1019910004845A KR 910004845 A KR910004845 A KR 910004845A KR 910017608 A KR910017608 A KR 910017608A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- sealed semiconductor
- resin sealed
- resin
- inner lead
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Die Bonding (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 1실시예에 따른 반도체장치의 리드프레임의 평면도.
Claims (1)
- 반도체소자를 탑재한 리드프레임(1)을 구비한 수지밀봉형 반도체장치에 있어서, 상기 리드프레임상에 형성되는 도금영역(4)이, 고정핀부(3)을 포함하지 않고 내부리드부(5) 및 이 내부리드부(5)에 대향하는 베드프레임(2)의 선단부분인 것을 특징으로 하는 수지밀봉형 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP02-076595 | 1990-03-28 | ||
JP2076595A JP2585830B2 (ja) | 1990-03-28 | 1990-03-28 | 樹脂封止型半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910017608A true KR910017608A (ko) | 1991-11-05 |
KR940007950B1 KR940007950B1 (ko) | 1994-08-29 |
Family
ID=13609668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910004845A KR940007950B1 (ko) | 1990-03-28 | 1991-03-28 | 수지밀봉형 반도체장치 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5153706A (ko) |
JP (1) | JP2585830B2 (ko) |
KR (1) | KR940007950B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5929511A (en) * | 1996-07-15 | 1999-07-27 | Matsushita Electronics Corporation | Lead frame for resin sealed semiconductor device |
US6265761B1 (en) | 1999-05-07 | 2001-07-24 | Maxim Integrated Products, Inc. | Semiconductor devices with improved lead frame structures |
JP2002076228A (ja) * | 2000-09-04 | 2002-03-15 | Dainippon Printing Co Ltd | 樹脂封止型半導体装置 |
US6396129B1 (en) | 2001-03-05 | 2002-05-28 | Siliconware Precision Industries Co., Ltd. | Leadframe with dot array of silver-plated regions on die pad for use in exposed-pad semiconductor package |
US7164585B2 (en) * | 2003-03-31 | 2007-01-16 | Intel Corporation | Thermal interface apparatus, systems, and methods |
US7927923B2 (en) | 2006-09-25 | 2011-04-19 | Micron Technology, Inc. | Method and apparatus for directing molding compound flow and resulting semiconductor device packages |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62140444A (ja) * | 1985-12-16 | 1987-06-24 | Nec Kyushu Ltd | 半導体装置用リ−ドフレ−ム |
JPS6396947A (ja) * | 1986-10-13 | 1988-04-27 | Mitsubishi Electric Corp | 半導体装置用リ−ドフレ−ム |
US4855807A (en) * | 1986-12-26 | 1989-08-08 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5072283A (en) * | 1988-04-12 | 1991-12-10 | Bolger Justin C | Pre-formed chip carrier cavity package |
-
1990
- 1990-03-28 JP JP2076595A patent/JP2585830B2/ja not_active Expired - Fee Related
-
1991
- 1991-03-28 KR KR1019910004845A patent/KR940007950B1/ko not_active IP Right Cessation
- 1991-03-28 US US07/676,370 patent/US5153706A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2585830B2 (ja) | 1997-02-26 |
KR940007950B1 (ko) | 1994-08-29 |
US5153706A (en) | 1992-10-06 |
JPH03278451A (ja) | 1991-12-10 |
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A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060731 Year of fee payment: 13 |
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LAPS | Lapse due to unpaid annual fee |