KR910017608A - 수지밀봉형 반도체장치 - Google Patents

수지밀봉형 반도체장치 Download PDF

Info

Publication number
KR910017608A
KR910017608A KR1019910004845A KR910004845A KR910017608A KR 910017608 A KR910017608 A KR 910017608A KR 1019910004845 A KR1019910004845 A KR 1019910004845A KR 910004845 A KR910004845 A KR 910004845A KR 910017608 A KR910017608 A KR 910017608A
Authority
KR
South Korea
Prior art keywords
semiconductor device
sealed semiconductor
resin sealed
resin
inner lead
Prior art date
Application number
KR1019910004845A
Other languages
English (en)
Other versions
KR940007950B1 (ko
Inventor
이사오 바바
사토시 다케우치
카즈노리 하야시
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910017608A publication Critical patent/KR910017608A/ko
Application granted granted Critical
Publication of KR940007950B1 publication Critical patent/KR940007950B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582—Metallic layers on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)

Abstract

내용 없음

Description

수지밀봉형 반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 본 발명의 1실시예에 따른 반도체장치의 리드프레임의 평면도.

Claims (1)

  1. 반도체소자를 탑재한 리드프레임(1)을 구비한 수지밀봉형 반도체장치에 있어서, 상기 리드프레임상에 형성되는 도금영역(4)이, 고정핀부(3)을 포함하지 않고 내부리드부(5) 및 이 내부리드부(5)에 대향하는 베드프레임(2)의 선단부분인 것을 특징으로 하는 수지밀봉형 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910004845A 1990-03-28 1991-03-28 수지밀봉형 반도체장치 KR940007950B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02-076595 1990-03-28
JP2076595A JP2585830B2 (ja) 1990-03-28 1990-03-28 樹脂封止型半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR910017608A true KR910017608A (ko) 1991-11-05
KR940007950B1 KR940007950B1 (ko) 1994-08-29

Family

ID=13609668

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910004845A KR940007950B1 (ko) 1990-03-28 1991-03-28 수지밀봉형 반도체장치

Country Status (3)

Country Link
US (1) US5153706A (ko)
JP (1) JP2585830B2 (ko)
KR (1) KR940007950B1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5929511A (en) * 1996-07-15 1999-07-27 Matsushita Electronics Corporation Lead frame for resin sealed semiconductor device
US6265761B1 (en) 1999-05-07 2001-07-24 Maxim Integrated Products, Inc. Semiconductor devices with improved lead frame structures
JP2002076228A (ja) * 2000-09-04 2002-03-15 Dainippon Printing Co Ltd 樹脂封止型半導体装置
US6396129B1 (en) 2001-03-05 2002-05-28 Siliconware Precision Industries Co., Ltd. Leadframe with dot array of silver-plated regions on die pad for use in exposed-pad semiconductor package
US7164585B2 (en) * 2003-03-31 2007-01-16 Intel Corporation Thermal interface apparatus, systems, and methods
US7927923B2 (en) 2006-09-25 2011-04-19 Micron Technology, Inc. Method and apparatus for directing molding compound flow and resulting semiconductor device packages

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140444A (ja) * 1985-12-16 1987-06-24 Nec Kyushu Ltd 半導体装置用リ−ドフレ−ム
JPS6396947A (ja) * 1986-10-13 1988-04-27 Mitsubishi Electric Corp 半導体装置用リ−ドフレ−ム
US4855807A (en) * 1986-12-26 1989-08-08 Kabushiki Kaisha Toshiba Semiconductor device
US5072283A (en) * 1988-04-12 1991-12-10 Bolger Justin C Pre-formed chip carrier cavity package

Also Published As

Publication number Publication date
JP2585830B2 (ja) 1997-02-26
KR940007950B1 (ko) 1994-08-29
US5153706A (en) 1992-10-06
JPH03278451A (ja) 1991-12-10

Similar Documents

Publication Publication Date Title
KR880003427A (ko) 반도체 장치 및 그에 사용되는 리드프레임
KR890012380A (ko) 전자 소자 패키지 및 제조방법
KR900019207A (ko) 수지밀봉형 반도체장치
KR890017802A (ko) 반도체 장치용 리드프레임
KR900007094A (ko) 성형 반도체 팩케지
KR910017604A (ko) 반도체장치
KR910001956A (ko) 반도체장치
KR910017608A (ko) 수지밀봉형 반도체장치
DE69115058D1 (de) Epoxyharzzusammensetzung und damit verkapselte Halbleiteranordnung.
KR910015031A (ko) 반도체장치용부품
KR890015393A (ko) 테이프 본딩방법
KR910020875A (ko) Ic용 리드프레임
KR960002775A (ko) 수지-봉합(resin-sealed) 반도체 소자
KR940016723A (ko) 반도체 리이드 프레임
KR870009468A (ko) 반도체 장치
KR950015728A (ko) 표면 실장형 반도체 장치
KR910019321A (ko) 발진기
KR920020655A (ko) Ic 카드
KR900004040A (ko) 반도체 집적회로 디바이스
KR910010686A (ko) 수지밀봉형 반도체장치
KR920013684A (ko) 반도체 리드프레임
KR920008912A (ko) 반도체 ic용 리드프레임
KR890016660A (ko) 리드프레임
KR900015290A (ko) 반도체 소자 패키지
KR920013689A (ko) 반도체 장치의 리이드 프레임

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060731

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee