KR20130133824A - Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 - Google Patents
Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 Download PDFInfo
- Publication number
- KR20130133824A KR20130133824A KR1020137020098A KR20137020098A KR20130133824A KR 20130133824 A KR20130133824 A KR 20130133824A KR 1020137020098 A KR1020137020098 A KR 1020137020098A KR 20137020098 A KR20137020098 A KR 20137020098A KR 20130133824 A KR20130133824 A KR 20130133824A
- Authority
- KR
- South Korea
- Prior art keywords
- pixel
- pixels
- column
- timing sequence
- image sensor
- Prior art date
Links
- 239000002184 metal Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims description 17
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 14
- 238000003491 array Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/779—Circuitry for scanning or addressing the pixel array
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110095448.2A CN102158663B (zh) | 2011-04-15 | 2011-04-15 | Cmos图像传感器像素及其控制时序 |
CN201110095448.2 | 2011-04-15 | ||
PCT/CN2011/075391 WO2012139322A1 (zh) | 2011-04-15 | 2011-06-07 | Cmos图像传感器像素及其控制时序 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20130133824A true KR20130133824A (ko) | 2013-12-09 |
Family
ID=44439815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020137020098A KR20130133824A (ko) | 2011-04-15 | 2011-06-07 | Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5650337B2 (zh) |
KR (1) | KR20130133824A (zh) |
CN (1) | CN102158663B (zh) |
WO (1) | WO2012139322A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102572320A (zh) * | 2011-11-28 | 2012-07-11 | 北京思比科微电子技术股份有限公司 | 降低cmos图像传感器模组高度的方法及cmos图像传感器模组 |
CN102447851B (zh) * | 2011-12-26 | 2014-07-30 | 深港产学研基地 | 高填充系数的双cmos图像传感器像素单元及工作方法 |
CN102595057B (zh) * | 2012-02-27 | 2014-09-24 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器像素及其控制时序 |
CN102856339B (zh) * | 2012-09-24 | 2015-09-02 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器列共享像素单元及像素阵列 |
CN102868866B (zh) * | 2012-09-24 | 2015-09-16 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器列共享2×2像素单元及像素阵列 |
CN103165636B (zh) * | 2013-03-21 | 2015-10-21 | 北京思比科微电子技术股份有限公司 | Cmos图像传感器的像素单元组及cmos图像传感器 |
CN103391407B (zh) * | 2013-07-31 | 2016-08-17 | 北京思比科微电子技术股份有限公司 | 一种cmos图像传感器的像素结构及该图像传感器 |
CN103391408B (zh) * | 2013-07-31 | 2017-02-15 | 北京思比科微电子技术股份有限公司 | 一种cmos图像传感器的像素结构及该图像传感器 |
CN104465690B (zh) * | 2014-12-26 | 2018-01-26 | 上海集成电路研发中心有限公司 | 版图、像素单元结构及其制备方法 |
KR102398025B1 (ko) * | 2017-03-15 | 2022-05-17 | 에스케이하이닉스 주식회사 | 이미지 센서 |
CN112563293A (zh) * | 2019-09-10 | 2021-03-26 | 格科微电子(上海)有限公司 | Cmos图像传感器的像素结构 |
CN115308757A (zh) * | 2021-05-08 | 2022-11-08 | 宁波飞芯电子科技有限公司 | 一种图像传感器及其驱动方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3031606B2 (ja) * | 1995-08-02 | 2000-04-10 | キヤノン株式会社 | 固体撮像装置と画像撮像装置 |
JP3792628B2 (ja) * | 2002-09-02 | 2006-07-05 | 富士通株式会社 | 固体撮像装置及び画像読み出し方法 |
US20040113151A1 (en) * | 2002-10-11 | 2004-06-17 | Kabushiki Kaisha Toshiba | CMOS image sensor |
US7369168B2 (en) * | 2003-07-29 | 2008-05-06 | Micron Technology, Inc. | Circuit for an active pixel sensor |
US7087883B2 (en) * | 2004-02-04 | 2006-08-08 | Omnivision Technologies, Inc. | CMOS image sensor using shared transistors between pixels with dual pinned photodiode |
JP4553612B2 (ja) * | 2004-03-18 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 撮像素子およびそれを備えた撮像装置 |
JP4230406B2 (ja) * | 2004-04-27 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
JP5089017B2 (ja) * | 2004-09-01 | 2012-12-05 | キヤノン株式会社 | 固体撮像装置及び固体撮像システム |
JP4768305B2 (ja) * | 2005-04-15 | 2011-09-07 | 岩手東芝エレクトロニクス株式会社 | 固体撮像装置 |
JP4479736B2 (ja) * | 2007-03-02 | 2010-06-09 | ソニー株式会社 | 撮像装置およびカメラ |
JP2009032953A (ja) * | 2007-07-27 | 2009-02-12 | Panasonic Corp | 固体撮像装置 |
US7989749B2 (en) * | 2007-10-05 | 2011-08-02 | Aptina Imaging Corporation | Method and apparatus providing shared pixel architecture |
JP4720813B2 (ja) * | 2007-10-19 | 2011-07-13 | ソニー株式会社 | 固体撮像装置 |
JP5173542B2 (ja) * | 2008-04-04 | 2013-04-03 | キヤノン株式会社 | 光電変換装置 |
CN101742131B (zh) * | 2008-11-25 | 2011-07-20 | 上海华虹Nec电子有限公司 | Cmos图像传感器的光电转换器 |
GB2466213B (en) * | 2008-12-12 | 2013-03-06 | Cmosis Nv | Pixel array with shared readout circuitry |
JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
JP5537172B2 (ja) * | 2010-01-28 | 2014-07-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
-
2011
- 2011-04-15 CN CN201110095448.2A patent/CN102158663B/zh not_active Expired - Fee Related
- 2011-06-07 KR KR1020137020098A patent/KR20130133824A/ko active Search and Examination
- 2011-06-07 WO PCT/CN2011/075391 patent/WO2012139322A1/zh active Application Filing
- 2011-06-07 JP JP2013554778A patent/JP5650337B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2014507905A (ja) | 2014-03-27 |
CN102158663B (zh) | 2013-09-11 |
JP5650337B2 (ja) | 2015-01-07 |
WO2012139322A1 (zh) | 2012-10-18 |
CN102158663A (zh) | 2011-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20130133824A (ko) | Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 | |
KR20130135293A (ko) | Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 | |
CN101854488B (zh) | 固体摄像装置、固体摄像装置的信号处理方法以及摄像装置 | |
US9661306B2 (en) | Solid-state imaging device and camera system | |
CN103858235B (zh) | 固态图像传感器和电子设备 | |
US20130049082A1 (en) | Solid-state imaging device and electronic apparatus | |
CN102917185A (zh) | 固态成像装置和成像装置 | |
CN103907133A (zh) | 堆叠芯片成像*** | |
US10818710B2 (en) | Image sensor including an extra transfer gate and an extra floating diffusion region | |
KR20110029217A (ko) | 내부 변환을 통하여 rgb베이어 신호를 출력하는 이미지 센서와 이를 포함하는 이미지 처리 장치 | |
JP2012019516A (ja) | イメージセンサのカラム回路およびピクセルビニング回路 | |
US20170302872A1 (en) | Solid-state imaging device, signal processing method, and electronic device | |
CN102856339B (zh) | Cmos图像传感器列共享像素单元及像素阵列 | |
KR102114343B1 (ko) | 센싱 픽셀 및 이를 포함하는 이미지 센서 | |
KR20150060675A (ko) | Cmos 이미지 센서 컬럼 공유 2x2 화소유닛 및 화소 어레이 | |
CN103137642B (zh) | Cmos图像传感器的像素单元及cmos图像传感器 | |
US8344312B2 (en) | Color filter array having plural filter layers, image sensor including the same, and electronic device including the color filter array | |
KR100674908B1 (ko) | 필 팩터가 개선된 cmos 이미지 소자 | |
CN103139498B (zh) | Cmos图像传感器的像素单元及cmos图像传感器 | |
TW202341717A (zh) | 影像感測器以及讀出影像感測器訊號之方法 | |
CN103391407A (zh) | 一种cmos图像传感器的像素结构及该图像传感器 | |
CN209658175U (zh) | 具有紧凑设计布局的图像传感器 | |
CN103165636B (zh) | Cmos图像传感器的像素单元组及cmos图像传感器 | |
CN109887947B (zh) | 具有紧凑设计布局的图像传感器 | |
CN103391408B (zh) | 一种cmos图像传感器的像素结构及该图像传感器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment |