KR20130133824A - Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 - Google Patents

Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 Download PDF

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KR20130133824A
KR20130133824A KR1020137020098A KR20137020098A KR20130133824A KR 20130133824 A KR20130133824 A KR 20130133824A KR 1020137020098 A KR1020137020098 A KR 1020137020098A KR 20137020098 A KR20137020098 A KR 20137020098A KR 20130133824 A KR20130133824 A KR 20130133824A
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South Korea
Prior art keywords
pixel
pixels
column
timing sequence
image sensor
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KR1020137020098A
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English (en)
Korean (ko)
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통후이 구오
장쿠 쿠앙
지에 첸
지비 리우
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수퍼픽스 마이크로 테크놀로지 컴퍼니 리미티드
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Publication of KR20130133824A publication Critical patent/KR20130133824A/ko

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020137020098A 2011-04-15 2011-06-07 Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스 KR20130133824A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN201110095448.2A CN102158663B (zh) 2011-04-15 2011-04-15 Cmos图像传感器像素及其控制时序
CN201110095448.2 2011-04-15
PCT/CN2011/075391 WO2012139322A1 (zh) 2011-04-15 2011-06-07 Cmos图像传感器像素及其控制时序

Publications (1)

Publication Number Publication Date
KR20130133824A true KR20130133824A (ko) 2013-12-09

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KR1020137020098A KR20130133824A (ko) 2011-04-15 2011-06-07 Cmos 이미지 센서 화소 및 그의 제어 타이밍시퀀스

Country Status (4)

Country Link
JP (1) JP5650337B2 (zh)
KR (1) KR20130133824A (zh)
CN (1) CN102158663B (zh)
WO (1) WO2012139322A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102572320A (zh) * 2011-11-28 2012-07-11 北京思比科微电子技术股份有限公司 降低cmos图像传感器模组高度的方法及cmos图像传感器模组
CN102447851B (zh) * 2011-12-26 2014-07-30 深港产学研基地 高填充系数的双cmos图像传感器像素单元及工作方法
CN102595057B (zh) * 2012-02-27 2014-09-24 北京思比科微电子技术股份有限公司 Cmos图像传感器像素及其控制时序
CN102856339B (zh) * 2012-09-24 2015-09-02 北京思比科微电子技术股份有限公司 Cmos图像传感器列共享像素单元及像素阵列
CN102868866B (zh) * 2012-09-24 2015-09-16 北京思比科微电子技术股份有限公司 Cmos图像传感器列共享2×2像素单元及像素阵列
CN103165636B (zh) * 2013-03-21 2015-10-21 北京思比科微电子技术股份有限公司 Cmos图像传感器的像素单元组及cmos图像传感器
CN103391407B (zh) * 2013-07-31 2016-08-17 北京思比科微电子技术股份有限公司 一种cmos图像传感器的像素结构及该图像传感器
CN103391408B (zh) * 2013-07-31 2017-02-15 北京思比科微电子技术股份有限公司 一种cmos图像传感器的像素结构及该图像传感器
CN104465690B (zh) * 2014-12-26 2018-01-26 上海集成电路研发中心有限公司 版图、像素单元结构及其制备方法
KR102398025B1 (ko) * 2017-03-15 2022-05-17 에스케이하이닉스 주식회사 이미지 센서
CN112563293A (zh) * 2019-09-10 2021-03-26 格科微电子（上海）有限公司 Cmos图像传感器的像素结构
CN115308757A (zh) * 2021-05-08 2022-11-08 宁波飞芯电子科技有限公司 一种图像传感器及其驱动方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3031606B2 (ja) * 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
JP3792628B2 (ja) * 2002-09-02 2006-07-05 富士通株式会社 固体撮像装置及び画像読み出し方法
US20040113151A1 (en) * 2002-10-11 2004-06-17 Kabushiki Kaisha Toshiba CMOS image sensor
US7369168B2 (en) * 2003-07-29 2008-05-06 Micron Technology, Inc. Circuit for an active pixel sensor
US7087883B2 (en) * 2004-02-04 2006-08-08 Omnivision Technologies, Inc. CMOS image sensor using shared transistors between pixels with dual pinned photodiode
JP4553612B2 (ja) * 2004-03-18 2010-09-29 ルネサスエレクトロニクス株式会社 撮像素子およびそれを備えた撮像装置
JP4230406B2 (ja) * 2004-04-27 2009-02-25 富士通マイクロエレクトロニクス株式会社 固体撮像装置
JP5089017B2 (ja) * 2004-09-01 2012-12-05 キヤノン株式会社 固体撮像装置及び固体撮像システム
JP4768305B2 (ja) * 2005-04-15 2011-09-07 岩手東芝エレクトロニクス株式会社 固体撮像装置
JP4479736B2 (ja) * 2007-03-02 2010-06-09 ソニー株式会社 撮像装置およびカメラ
JP2009032953A (ja) * 2007-07-27 2009-02-12 Panasonic Corp 固体撮像装置
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
JP4720813B2 (ja) * 2007-10-19 2011-07-13 ソニー株式会社 固体撮像装置
JP5173542B2 (ja) * 2008-04-04 2013-04-03 キヤノン株式会社 光電変換装置
CN101742131B (zh) * 2008-11-25 2011-07-20 上海华虹Nec电子有限公司 Cmos图像传感器的光电转换器
GB2466213B (en) * 2008-12-12 2013-03-06 Cmosis Nv Pixel array with shared readout circuitry
JP5029624B2 (ja) * 2009-01-15 2012-09-19 ソニー株式会社 固体撮像装置及び電子機器
JP5537172B2 (ja) * 2010-01-28 2014-07-02 ソニー株式会社 固体撮像装置及び電子機器

Also Published As

Publication number Publication date
JP2014507905A (ja) 2014-03-27
CN102158663B (zh) 2013-09-11
JP5650337B2 (ja) 2015-01-07
WO2012139322A1 (zh) 2012-10-18
CN102158663A (zh) 2011-08-17

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