KR20110016506A - 형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을 이용한 발광 장치 - Google Patents
형광체 조성물과 그 제조 방법, 및 그 형광체 조성물을 이용한 발광 장치 Download PDFInfo
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- KR20110016506A KR20110016506A KR1020117001875A KR20117001875A KR20110016506A KR 20110016506 A KR20110016506 A KR 20110016506A KR 1020117001875 A KR1020117001875 A KR 1020117001875A KR 20117001875 A KR20117001875 A KR 20117001875A KR 20110016506 A KR20110016506 A KR 20110016506A
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Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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Applications Claiming Priority (10)
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JP2004131770 | 2004-04-27 | ||
JPJP-P-2004-131770 | 2004-04-27 | ||
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JPJP-P-2004-194196 | 2004-06-30 | ||
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JPJP-P-2004-250739 | 2004-08-30 | ||
JP2004250739A JP2005336450A (ja) | 2004-04-27 | 2004-08-30 | 蛍光体組成物とその製造方法、並びにその蛍光体組成物を用いた発光装置 |
JPJP-P-2004-363534 | 2004-12-15 | ||
JP2004363534A JP4128564B2 (ja) | 2004-04-27 | 2004-12-15 | 発光装置 |
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JP (8) | JP4128564B2 (de) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101157313B1 (ko) * | 2004-04-27 | 2012-06-18 | 파나소닉 주식회사 | 형광체 조성물과 그 제조방법, 및 그 형광체 조성물을 이용한 발광 장치 |
US9196800B2 (en) | 1996-06-26 | 2015-11-24 | Osram Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
Families Citing this family (135)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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JP2007049114A (ja) | 2005-05-30 | 2007-02-22 | Sharp Corp | 発光装置とその製造方法 |
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US7859182B2 (en) | 2005-08-31 | 2010-12-28 | Lumination Llc | Warm white LED-based lamp incoporating divalent EU-activated silicate yellow emitting phosphor |
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CN101351891B (zh) | 2005-12-22 | 2014-11-19 | 科锐公司 | 照明装置 |
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TW201011942A (en) * | 2008-09-11 | 2010-03-16 | Advanced Optoelectronic Tech | Method and system for configuring high CRI LED |
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JP2010177620A (ja) * | 2009-02-02 | 2010-08-12 | Showa Denko Kk | 発光装置の製造方法 |
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JP5129392B2 (ja) * | 2009-08-28 | 2013-01-30 | 株式会社東芝 | 蛍光体の製造方法およびそれにより製造された蛍光体 |
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US8643038B2 (en) | 2010-03-09 | 2014-02-04 | Cree, Inc. | Warm white LEDs having high color rendering index values and related luminophoric mediums |
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JP2011225696A (ja) * | 2010-04-19 | 2011-11-10 | Sharp Corp | 赤色系発光蛍光体、その製造方法および赤色系発光蛍光体を用いた発光装置 |
US8329482B2 (en) | 2010-04-30 | 2012-12-11 | Cree, Inc. | White-emitting LED chips and method for making same |
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KR101243773B1 (ko) | 2010-08-17 | 2013-03-14 | 순천대학교 산학협력단 | 발광장치 및 태양전지용 파장변환조성물, 이 조성물을 포함하는 발광장치와 태양전지 및 이 파장변환조성물의 제조방법 |
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JP2012246462A (ja) * | 2011-05-31 | 2012-12-13 | Sharp Corp | 発光装置 |
US8747697B2 (en) * | 2011-06-07 | 2014-06-10 | Cree, Inc. | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
JP2013007610A (ja) * | 2011-06-23 | 2013-01-10 | Canon Inc | 測色器及び画像形成装置 |
MX2011007939A (es) * | 2011-07-13 | 2013-01-24 | William J Odom Jr | Aparato y metodo de iluminacion para casa de aves. |
CN103764788B (zh) * | 2011-08-04 | 2016-04-20 | 皇家飞利浦有限公司 | 光转换器和包括这样的光转换器的照明单元 |
DE202011106052U1 (de) * | 2011-09-23 | 2011-11-09 | Osram Ag | Lichtquelle mit Leuchtstoff und zugehörige Beleuchtungseinheit. |
JP5899470B2 (ja) * | 2011-12-16 | 2016-04-06 | パナソニックIpマネジメント株式会社 | 照明装置 |
JP2013163722A (ja) * | 2012-02-09 | 2013-08-22 | Denki Kagaku Kogyo Kk | 蛍光体及び発光装置 |
JP2013163725A (ja) * | 2012-02-09 | 2013-08-22 | Denki Kagaku Kogyo Kk | 蛍光体及び発光装置 |
JP2015083618A (ja) * | 2012-02-09 | 2015-04-30 | 電気化学工業株式会社 | 蛍光体及び発光装置 |
JP2013163723A (ja) * | 2012-02-09 | 2013-08-22 | Denki Kagaku Kogyo Kk | 蛍光体及び発光装置 |
JP2015083617A (ja) * | 2012-02-09 | 2015-04-30 | 電気化学工業株式会社 | 蛍光体及び発光装置 |
WO2013129854A1 (ko) | 2012-02-27 | 2013-09-06 | 경기대학교 산학협력단 | 실리콘 산질화물 형광체, 이의 제조 방법 및 이를 포함하는 광소자 |
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JP2013207241A (ja) * | 2012-03-29 | 2013-10-07 | Mitsubishi Chemicals Corp | 半導体発光装置、半導体発光システムおよび照明器具 |
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CN104241262B (zh) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | 发光装置以及显示装置 |
JP6266923B2 (ja) * | 2013-08-26 | 2018-01-24 | シチズン電子株式会社 | Led発光装置 |
US9142733B2 (en) * | 2013-09-03 | 2015-09-22 | Panasonic Intellectual Property Management Co., Ltd. | Light source device including a high energy light source and a wavelength conversion member, illuminating device comprising the same, and vehicle |
CN105814699B (zh) | 2013-10-02 | 2019-12-31 | Glbtech株式会社 | 具有高显色性的白光发光装置 |
JP2015082596A (ja) | 2013-10-23 | 2015-04-27 | 株式会社東芝 | 発光装置 |
US9837585B2 (en) * | 2013-11-08 | 2017-12-05 | Lumimicro Corp. Ltd. | Light emitting device |
KR101487961B1 (ko) | 2013-11-25 | 2015-01-30 | 율촌화학 주식회사 | 백색 발광소자 및 이를 포함하는 발광 장치 |
JP6195117B2 (ja) | 2013-12-03 | 2017-09-13 | パナソニックIpマネジメント株式会社 | 酸塩化物蛍光体、発光装置、照明装置、及び車両 |
JP6358457B2 (ja) * | 2014-01-20 | 2018-07-18 | パナソニックIpマネジメント株式会社 | 発光装置、照明用光源及び照明装置 |
JP6323177B2 (ja) * | 2014-05-30 | 2018-05-16 | 日亜化学工業株式会社 | 半導体発光装置 |
JP6405738B2 (ja) * | 2014-06-19 | 2018-10-17 | 三菱ケミカル株式会社 | 発光装置 |
JP6407654B2 (ja) * | 2014-10-08 | 2018-10-17 | 株式会社東芝 | Ledモジュールおよび照明装置 |
JP2016111267A (ja) * | 2014-12-09 | 2016-06-20 | パナソニックIpマネジメント株式会社 | 照明モジュール、照明装置及び液晶表示装置 |
JP6755090B2 (ja) * | 2014-12-11 | 2020-09-16 | シチズン電子株式会社 | 発光装置及び発光装置の製造方法 |
JP6428245B2 (ja) * | 2014-12-19 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
US9716212B2 (en) | 2014-12-19 | 2017-07-25 | Nichia Corporation | Light emitting device |
JP6506037B2 (ja) * | 2015-02-02 | 2019-04-24 | 富士フイルム株式会社 | 蛍光体分散組成物及びそれを用いて得られた蛍光成形体、波長変換膜、波長変換部材、バックライトユニット、液晶表示装置 |
DE102015202159B4 (de) * | 2015-02-06 | 2023-06-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiter-Beleuchtungsvorrichtung |
EP3316322B1 (de) * | 2015-06-24 | 2023-12-13 | Seoul Semiconductor Co., Ltd. | Weisslichtquellensystem |
JP6707728B2 (ja) * | 2015-06-24 | 2020-06-10 | 東芝マテリアル株式会社 | 医療施設照明用白色光源システム |
JP6856890B2 (ja) * | 2015-08-28 | 2021-04-14 | 株式会社小糸製作所 | 蛍光体 |
EP3135746B1 (de) | 2015-08-28 | 2019-05-29 | Nichia Corporation | Verfahren zur herstellung von fluoreszierendem nitridmaterial |
KR102514150B1 (ko) * | 2016-01-05 | 2023-04-04 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 및 이를 구비한 조명 장치 |
US10256374B2 (en) | 2016-03-04 | 2019-04-09 | Nichia Corporation | Light emitting device |
JP6460040B2 (ja) * | 2016-03-04 | 2019-01-30 | 日亜化学工業株式会社 | 発光装置 |
EP3241880B1 (de) * | 2016-05-03 | 2018-04-18 | Lumileds Holding B.V. | Wellenlängenkonvertierendes material für eine lichtemittierende vorrichtung |
JP6477779B2 (ja) * | 2016-05-26 | 2019-03-06 | 日亜化学工業株式会社 | 発光装置 |
JP2016189488A (ja) * | 2016-07-07 | 2016-11-04 | 日亜化学工業株式会社 | 発光装置 |
JP6848637B2 (ja) * | 2016-12-02 | 2021-03-24 | 豊田合成株式会社 | 発光装置 |
JP7004892B2 (ja) * | 2017-04-11 | 2022-01-21 | 日亜化学工業株式会社 | 発光装置 |
JP6934316B2 (ja) * | 2017-04-24 | 2021-09-15 | 日本特殊陶業株式会社 | 波長変換部材 |
JP6861389B2 (ja) * | 2017-07-26 | 2021-04-21 | パナソニックIpマネジメント株式会社 | 屋外用照明装置 |
JP7009879B2 (ja) * | 2017-09-26 | 2022-01-26 | 豊田合成株式会社 | 発光装置 |
US10837607B2 (en) * | 2017-09-26 | 2020-11-17 | Lumileds Llc | Light emitting device with improved warm-white color point |
JP2019062173A (ja) * | 2017-09-26 | 2019-04-18 | パナソニックIpマネジメント株式会社 | 照明装置、及び、発光装置 |
KR102130817B1 (ko) * | 2018-01-25 | 2020-07-08 | 지엘비텍 주식회사 | 고연색성 백색 발광 소자 |
JP2020053664A (ja) * | 2018-09-20 | 2020-04-02 | 豊田合成株式会社 | 発光装置 |
KR20210105894A (ko) | 2018-12-27 | 2021-08-27 | 덴카 주식회사 | 형광체 기판, 발광 기판 및 조명 장치 |
WO2020137760A1 (ja) * | 2018-12-27 | 2020-07-02 | デンカ株式会社 | 蛍光体基板、発光基板及び照明装置 |
US12027652B2 (en) | 2018-12-27 | 2024-07-02 | Denka Company Limited | Phosphor substrate, light emitting substrate, and lighting device |
JP7142145B2 (ja) * | 2019-02-28 | 2022-09-26 | 京セラ株式会社 | 照明装置 |
CN110364598B (zh) * | 2019-06-20 | 2020-10-09 | 华灿光电(苏州)有限公司 | 发光二极管外延片及其制作方法 |
CN116462497A (zh) * | 2023-03-16 | 2023-07-21 | 河北光兴半导体技术有限公司 | 一种Tb3+掺杂的铝酸盐绿色荧光陶瓷及其制备方法和应用 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1328959A1 (de) * | 2000-07-28 | 2003-07-23 | Osram Opto Semiconductors GmbH & Co. OHG | Auf lumineszenzumsetzung basierende leuchtdiode und leuchtstoffe für die wellenlängenumsetzung |
JP4619509B2 (ja) * | 2000-09-28 | 2011-01-26 | 株式会社東芝 | 発光装置 |
DE10133352A1 (de) * | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
WO2003021691A1 (en) * | 2001-09-03 | 2003-03-13 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting device |
DE10147040A1 (de) * | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
JP4221950B2 (ja) * | 2002-05-23 | 2009-02-12 | 日亜化学工業株式会社 | 蛍光体 |
JP2003321675A (ja) * | 2002-04-26 | 2003-11-14 | Nichia Chem Ind Ltd | 窒化物蛍光体及びその製造方法 |
EP1490453B1 (de) * | 2002-03-25 | 2012-08-15 | Philips Intellectual Property & Standards GmbH | Dreifarben-weisslicht-led-lampe |
FR2840748B1 (fr) * | 2002-06-05 | 2004-08-27 | France Telecom | Procede et systeme de verification de signatures electroniques et carte a microcircuit pour la mise en oeuvre du procede |
ES2292979T3 (es) * | 2002-06-06 | 2008-03-16 | Ilight Technologies, Inc. | Dispositivo de iluminacion para imitar el alumbrado de neon mediante el uso de fluorocromos. |
JP4207489B2 (ja) * | 2002-08-06 | 2009-01-14 | 株式会社豊田中央研究所 | α−サイアロン蛍光体 |
EP1413619A1 (de) * | 2002-09-24 | 2004-04-28 | Osram Opto Semiconductors GmbH | Lumineszentes Material, insbesondere zur Anwendung in Leuchtdioden |
JP3837588B2 (ja) * | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | 蛍光体と蛍光体を用いた発光器具 |
JP4362625B2 (ja) * | 2004-02-18 | 2009-11-11 | 独立行政法人物質・材料研究機構 | 蛍光体の製造方法 |
JP3921545B2 (ja) * | 2004-03-12 | 2007-05-30 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法 |
JP4128564B2 (ja) * | 2004-04-27 | 2008-07-30 | 松下電器産業株式会社 | 発光装置 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9196800B2 (en) | 1996-06-26 | 2015-11-24 | Osram Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
KR101157313B1 (ko) * | 2004-04-27 | 2012-06-18 | 파나소닉 주식회사 | 형광체 조성물과 그 제조방법, 및 그 형광체 조성물을 이용한 발광 장치 |
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JP2011155297A (ja) | 2011-08-11 |
JP4559496B2 (ja) | 2010-10-06 |
JP2008016861A (ja) | 2008-01-24 |
JP5604482B2 (ja) | 2014-10-08 |
JP4128564B2 (ja) | 2008-07-30 |
JP2006049799A (ja) | 2006-02-16 |
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TW200611963A (en) | 2006-04-16 |
JP4558808B2 (ja) | 2010-10-06 |
ATE539135T1 (de) | 2012-01-15 |
JP3940162B2 (ja) | 2007-07-04 |
JP2008187188A (ja) | 2008-08-14 |
JP2013021339A (ja) | 2013-01-31 |
JP2008169395A (ja) | 2008-07-24 |
ATE546506T1 (de) | 2012-03-15 |
JP2008177592A (ja) | 2008-07-31 |
JP5171981B2 (ja) | 2013-03-27 |
TWI394815B (zh) | 2013-05-01 |
TW200944577A (en) | 2009-11-01 |
JP4094047B2 (ja) | 2008-06-04 |
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