TW200611963A - Phosphor composition and method for producing the same, and light-emitting device using the same - Google Patents

Phosphor composition and method for producing the same, and light-emitting device using the same

Info

Publication number
TW200611963A
TW200611963A TW094113213A TW94113213A TW200611963A TW 200611963 A TW200611963 A TW 200611963A TW 094113213 A TW094113213 A TW 094113213A TW 94113213 A TW94113213 A TW 94113213A TW 200611963 A TW200611963 A TW 200611963A
Authority
TW
Taiwan
Prior art keywords
same
light
emitting device
producing
phosphor composition
Prior art date
Application number
TW094113213A
Other languages
English (en)
Inventor
Shozo Oshio
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39697774&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW200611963(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP2004250739A external-priority patent/JP2005336450A/ja
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200611963A publication Critical patent/TW200611963A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)
TW094113213A 2004-04-27 2005-04-26 Phosphor composition and method for producing the same, and light-emitting device using the same TW200611963A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2004131770 2004-04-27
JP2004182797 2004-06-21
JP2004194196 2004-06-30
JP2004250739A JP2005336450A (ja) 2004-04-27 2004-08-30 蛍光体組成物とその製造方法、並びにその蛍光体組成物を用いた発光装置
JP2004363534A JP4128564B2 (ja) 2004-04-27 2004-12-15 発光装置

Publications (1)

Publication Number Publication Date
TW200611963A true TW200611963A (en) 2006-04-16

Family

ID=39697774

Family Applications (2)

Application Number Title Priority Date Filing Date
TW098119010A TWI394815B (zh) 2004-04-27 2005-04-26 螢光體組成物及其製造方法、使用該螢光體組成物之發光裝置
TW094113213A TW200611963A (en) 2004-04-27 2005-04-26 Phosphor composition and method for producing the same, and light-emitting device using the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW098119010A TWI394815B (zh) 2004-04-27 2005-04-26 螢光體組成物及其製造方法、使用該螢光體組成物之發光裝置

Country Status (4)

Country Link
JP (8) JP4128564B2 (zh)
KR (1) KR20110016506A (zh)
AT (2) ATE546506T1 (zh)
TW (2) TWI394815B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
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CN101220272B (zh) * 2006-12-20 2012-08-29 Nec照明株式会社 发红光的氮化物荧光材料及使用其的白光发光装置
TWI458805B (zh) * 2006-09-29 2014-11-01 Dowa Electronics Materials Co 氮化物螢光體或氧氮化物螢光體之製造方法
CN110364598A (zh) * 2019-06-20 2019-10-22 华灿光电(苏州）有限公司 发光二极管外延片及其制作方法
CN116462497A (zh) * 2023-03-16 2023-07-21 河北光兴半导体技术有限公司 一种Tb3+掺杂的铝酸盐绿色荧光陶瓷及其制备方法和应用

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KR100643442B1 (ko) 1996-06-26 2006-11-10 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 발광 변환 소자를 포함하는 발광 반도체 소자
EP2270887B1 (en) 2003-04-30 2020-01-22 Cree, Inc. High powered light emitter packages with compact optics
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JP3837588B2 (ja) 2003-11-26 2006-10-25 独立行政法人物質・材料研究機構 蛍光体と蛍光体を用いた発光器具
WO2005103199A1 (en) 2004-04-27 2005-11-03 Matsushita Electric Industrial Co., Ltd. Phosphor composition and method for producing the same, and light-emitting device using the same
JP4128564B2 (ja) * 2004-04-27 2008-07-30 松下電器産業株式会社 発光装置
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