KR20100087678A - 선택적 에칭 및 이플루오르화 크세논의 형성 - Google Patents

선택적 에칭 및 이플루오르화 크세논의 형성 Download PDF

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Publication number: KR20100087678A
Authority: KR; South Korea
Prior art keywords: chamber; silicon; xef; plasma; fluorine
Prior art date: 2009-01-27

Application number

KR1020100007532A

Other languages

English (en)

Korean (ko)

Inventor

딩준 우

유진 죠셉 주니어 칼왁키

아누파마 말리칼주난

앤드류 데이비드 존슨

Original Assignee

에어 프로덕츠 앤드 케미칼스, 인코오포레이티드

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-01-27

Filing date

2010-01-27

Publication date

2010-08-05

2009-01-27 Priority claimed from US12/360,588 external-priority patent/US8278222B2/en

2010-01-27 Application filed by 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 filed Critical 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드

2010-08-05 Publication of KR20100087678A publication Critical patent/KR20100087678A/ko

Links

238000005530 etching Methods 0.000 title claims abstract description 57
BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 title claims abstract description 22
230000015572 biosynthetic process Effects 0.000 title abstract description 11
238000000034 method Methods 0.000 claims abstract description 87
239000000463 material Substances 0.000 claims abstract description 63
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 51
229910052719 titanium Inorganic materials 0.000 claims abstract description 50
239000010936 titanium Substances 0.000 claims abstract description 50
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HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 36
229910052710 silicon Inorganic materials 0.000 claims abstract description 31
235000012239 silicon dioxide Nutrition 0.000 claims abstract description 31
239000010703 silicon Substances 0.000 claims abstract description 28
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
239000000203 mixture Substances 0.000 claims abstract description 23
239000000377 silicon dioxide Substances 0.000 claims abstract description 21
229910052750 molybdenum Inorganic materials 0.000 claims abstract description 18
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 15
239000011733 molybdenum Substances 0.000 claims abstract description 15
238000012545 processing Methods 0.000 claims abstract description 15
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 11
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 11
229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
239000010937 tungsten Substances 0.000 claims abstract description 11
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
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BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 9
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
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GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 7
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QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 6
229910052785 arsenic Inorganic materials 0.000 claims abstract description 6
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 6
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239000010949 copper Substances 0.000 claims abstract description 6
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GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 6
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239000011574 phosphorus Substances 0.000 claims abstract description 6
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VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 5
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PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
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239000007789 gas Substances 0.000 claims description 46
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239000011737 fluorine Substances 0.000 claims description 35
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 34
239000000126 substance Substances 0.000 claims description 24
239000004065 semiconductor Substances 0.000 claims description 22
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125000001153 fluoro group Chemical group F* 0.000 claims description 18
FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 15
150000002500 ions Chemical class 0.000 claims description 12
238000011144 upstream manufacturing Methods 0.000 claims description 9
239000011261 inert gas Substances 0.000 claims description 7
238000005468 ion implantation Methods 0.000 claims description 7
229910052804 chromium Inorganic materials 0.000 claims description 5
239000011651 chromium Substances 0.000 claims description 5
229910052734 helium Inorganic materials 0.000 claims description 4
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
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230000008021 deposition Effects 0.000 abstract description 29
238000004140 cleaning Methods 0.000 abstract description 23
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BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
239000005368 silicate glass Substances 0.000 abstract 1
229910004298 SiO 2 Inorganic materials 0.000 description 48
238000000151 deposition Methods 0.000 description 29
239000010408 film Substances 0.000 description 22
238000001157 Fourier transform infrared spectrum Methods 0.000 description 19
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XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
229910052786 argon Inorganic materials 0.000 description 8
238000005229 chemical vapour deposition Methods 0.000 description 6
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
238000006243 chemical reaction Methods 0.000 description 5
238000002474 experimental method Methods 0.000 description 5
238000004377 microelectronic Methods 0.000 description 5
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238000005137 deposition process Methods 0.000 description 3
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
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238000001228 spectrum Methods 0.000 description 3
235000012431 wafers Nutrition 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
230000009286 beneficial effect Effects 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
239000000356 contaminant Substances 0.000 description 2
238000000354 decomposition reaction Methods 0.000 description 2
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238000010494 dissociation reaction Methods 0.000 description 2
230000005593 dissociations Effects 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
239000002360 explosive Substances 0.000 description 2
150000004820 halides Chemical class 0.000 description 2
229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
230000003993 interaction Effects 0.000 description 2
-1 perfluoro Chemical group 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
239000011241 protective layer Substances 0.000 description 2
230000009467 reduction Effects 0.000 description 2
239000003870 refractory metal Substances 0.000 description 2
229910021332 silicide Inorganic materials 0.000 description 2
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
ZWAWYSBJNBVQHP-UHFFFAOYSA-N xenon trioxide Chemical compound O=[Xe](=O)=O ZWAWYSBJNBVQHP-UHFFFAOYSA-N 0.000 description 2
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238000003486 chemical etching Methods 0.000 description 1
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239000010432 diamond Substances 0.000 description 1
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239000003989 dielectric material Substances 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000004880 explosion Methods 0.000 description 1
150000002222 fluorine compounds Chemical class 0.000 description 1
NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
VJVUOJVKEWVFBF-UHFFFAOYSA-N fluoroxenon Chemical class [Xe]F VJVUOJVKEWVFBF-UHFFFAOYSA-N 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
150000002367 halogens Chemical class 0.000 description 1
238000002513 implantation Methods 0.000 description 1
239000012535 impurity Substances 0.000 description 1
238000001802 infusion Methods 0.000 description 1
230000005764 inhibitory process Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
229910052743 krypton Inorganic materials 0.000 description 1
238000001459 lithography Methods 0.000 description 1
238000011068 loading method Methods 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
229910052751 metal Inorganic materials 0.000 description 1
239000002184 metal Substances 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
238000005459 micromachining Methods 0.000 description 1
229910003465 moissanite Inorganic materials 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
230000002969 morbid Effects 0.000 description 1
QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
229910052756 noble gas Inorganic materials 0.000 description 1
NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
230000036961 partial effect Effects 0.000 description 1
239000002245 particle Substances 0.000 description 1
239000011236 particulate material Substances 0.000 description 1
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229920005591 polysilicon Polymers 0.000 description 1
230000003389 potentiating effect Effects 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000000376 reactant Substances 0.000 description 1
238000011084 recovery Methods 0.000 description 1
238000004064 recycling Methods 0.000 description 1
230000002829 reductive effect Effects 0.000 description 1
230000008439 repair process Effects 0.000 description 1
230000004044 response Effects 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1
150000003463 sulfur Chemical class 0.000 description 1
SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
229960000909 sulfur hexafluoride Drugs 0.000 description 1
ISXSCDLOGDJUNJ-UHFFFAOYSA-N tert-butyl prop-2-enoate Chemical compound CC(C)(C)OC(=O)C=C ISXSCDLOGDJUNJ-UHFFFAOYSA-N 0.000 description 1
238000012360 testing method Methods 0.000 description 1
TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
239000010409 thin film Substances 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1
JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
229910021342 tungsten silicide Inorganic materials 0.000 description 1

Images

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching

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Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Physics & Mathematics (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Plasma & Fusion (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Drying Of Semiconductors (AREA)

KR1020100007532A 2009-01-27 2010-01-27 선택적 에칭 및 이플루오르화 크세논의 형성 KR20100087678A (ko)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US12/360,588 US8278222B2 (en)	2005-11-22	2009-01-27	Selective etching and formation of xenon difluoride
US12/360,588		2009-01-27

Publications (1)

Publication Number	Publication Date
KR20100087678A true KR20100087678A (ko)	2010-08-05

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Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1020100007532A KR20100087678A (ko)	2009-01-27	2010-01-27	선택적 에칭 및 이플루오르화 크세논의 형성

Country Status (5)

Country	Link
JP (1)	JP2010177666A (zh)
KR (1)	KR20100087678A (zh)
CN (2)	CN101847570B (zh)
CA (1)	CA2690697A1 (zh)
TW (1)	TWI475611B (zh)

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JP5627990B2 (ja) *	2010-10-25	2014-11-19	Hoya株式会社	インプリント用モールドの製造方法
JP6408396B2 (ja) *	2015-02-17	2018-10-17	三井化学株式会社	ペリクル膜の製造方法、ペリクルの製造方法、およびフォトマスクの製造方法
NL2014497B1 (en) *	2015-03-20	2017-01-19	Asm Int Nv	Method for cleaning deposition apparatus.
CN105537207B (zh) *	2015-12-11	2018-09-25	上海交通大学	一种高温用石英管的清洗方法
CN109463005B (zh) *	2016-06-03	2023-12-15	恩特格里斯公司	二氧化铪和二氧化锆的气相蚀刻
JP6957252B2 (ja) *	2017-07-20	2021-11-02	岩谷産業株式会社	切断加工方法
JP7066263B2 (ja) *	2018-01-23	2022-05-13	株式会社ディスコ	加工方法、エッチング装置、及びレーザ加工装置
CN110718459A (zh) *	2018-07-13	2020-01-21	北京北方华创微电子装备有限公司	非等离子体刻蚀方法及刻蚀设备

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2010
- 2010-01-21 CA CA2690697A patent/CA2690697A1/en not_active Abandoned
- 2010-01-22 TW TW099101850A patent/TWI475611B/zh active
- 2010-01-26 JP JP2010013751A patent/JP2010177666A/ja active Pending
- 2010-01-27 CN CN2010101044846A patent/CN101847570B/zh active Active
- 2010-01-27 CN CN2012100285454A patent/CN102592994A/zh active Pending
- 2010-01-27 KR KR1020100007532A patent/KR20100087678A/ko not_active Application Discontinuation

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JP2010177666A (ja)	2010-08-12
TW201029065A (en)	2010-08-01
CN101847570A (zh)	2010-09-29
CA2690697A1 (en)	2010-07-27
CN101847570B (zh)	2012-11-07
TWI475611B (zh)	2015-03-01
CN102592994A (zh)	2012-07-18

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