CA2690697A1 - Selective etching and formation of xenon difluoride - Google Patents

Selective etching and formation of xenon difluoride Download PDF

Info

Publication number: CA2690697A1
Authority: CA; Canada
Prior art keywords: chamber; silicon; xef2; plasma generator; fluorine containing
Prior art date: 2009-01-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

CA2690697A

Other languages

English (en)

French (fr)

Inventor

Dingjun Wu

Eugene Joseph Karwacki, Jr.

Anupama Mallikarjunan

Andrew David Johnson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Air Products and Chemicals Inc

Original Assignee

Air Products and Chemicals Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2009-01-27

Filing date

2010-01-21

Publication date

2010-07-27

2009-01-27 Priority claimed from US12/360,588 external-priority patent/US8278222B2/en

2010-01-21 Application filed by Air Products and Chemicals Inc filed Critical Air Products and Chemicals Inc

2010-07-27 Publication of CA2690697A1 publication Critical patent/CA2690697A1/en

Status Abandoned legal-status Critical Current

Links

238000005530 etching Methods 0.000 title claims abstract description 52
BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 title claims description 100
230000015572 biosynthetic process Effects 0.000 title description 12
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 103
238000000034 method Methods 0.000 claims abstract description 98
230000008569 process Effects 0.000 claims abstract description 88
239000000463 material Substances 0.000 claims abstract description 44
229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 42
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 40
229910052731 fluorine Inorganic materials 0.000 claims abstract description 38
239000011737 fluorine Substances 0.000 claims abstract description 38
YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 34
235000012239 silicon dioxide Nutrition 0.000 claims abstract description 34
229910052710 silicon Inorganic materials 0.000 claims abstract description 26
239000000126 substance Substances 0.000 claims abstract description 26
239000000203 mixture Substances 0.000 claims abstract description 24
239000004065 semiconductor Substances 0.000 claims abstract description 24
239000000377 silicon dioxide Substances 0.000 claims abstract description 24
239000010703 silicon Substances 0.000 claims abstract description 23
125000001153 fluoro group Chemical group F* 0.000 claims abstract description 19
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
229910052750 molybdenum Inorganic materials 0.000 claims abstract description 17
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 15
239000011733 molybdenum Substances 0.000 claims abstract description 15
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 11
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 11
239000010936 titanium Substances 0.000 claims abstract description 11
229910052719 titanium Inorganic materials 0.000 claims abstract description 11
ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 10
229910052796 boron Inorganic materials 0.000 claims abstract description 10
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
239000010937 tungsten Substances 0.000 claims abstract description 10
238000011144 upstream manufacturing Methods 0.000 claims abstract description 10
WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 claims abstract description 9
BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 9
238000005468 ion implantation Methods 0.000 claims abstract description 8
239000005360 phosphosilicate glass Substances 0.000 claims abstract description 8
OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 6
229910052785 arsenic Inorganic materials 0.000 claims abstract description 6
RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 6
229910052732 germanium Inorganic materials 0.000 claims abstract description 6
GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 6
229910052735 hafnium Inorganic materials 0.000 claims abstract description 6
VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 6
229910052759 nickel Inorganic materials 0.000 claims abstract description 6
229910052758 niobium Inorganic materials 0.000 claims abstract description 6
239000010955 niobium Substances 0.000 claims abstract description 6
GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 6
QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 claims abstract description 6
229910052698 phosphorus Inorganic materials 0.000 claims abstract description 6
239000011574 phosphorus Substances 0.000 claims abstract description 6
229920002120 photoresistant polymer Polymers 0.000 claims abstract description 6
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 6
229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 6
229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 6
229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
229910052804 chromium Inorganic materials 0.000 claims abstract description 5
239000011651 chromium Substances 0.000 claims abstract description 5
229910052802 copper Inorganic materials 0.000 claims abstract description 5
239000010949 copper Substances 0.000 claims abstract description 5
229910052697 platinum Inorganic materials 0.000 claims abstract description 5
VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 4
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
239000004642 Polyimide Substances 0.000 claims abstract description 4
229910010380 TiNi Inorganic materials 0.000 claims abstract description 4
229910045601 alloy Inorganic materials 0.000 claims abstract description 4
239000000956 alloy Substances 0.000 claims abstract description 4
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 4
229910052737 gold Inorganic materials 0.000 claims abstract description 4
239000010931 gold Substances 0.000 claims abstract description 4
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 4
229920001721 polyimide Polymers 0.000 claims abstract description 4
LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract 2
239000007789 gas Substances 0.000 claims description 44
229910052724 xenon Inorganic materials 0.000 claims description 18
FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 15
150000002500 ions Chemical class 0.000 claims description 12
238000012545 processing Methods 0.000 claims description 8
239000011261 inert gas Substances 0.000 claims description 7
229910052734 helium Inorganic materials 0.000 claims description 4
QXYJCZRRLLQGCR-UHFFFAOYSA-N molybdenum(IV) oxide Inorganic materials O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 claims 1
230000008021 deposition Effects 0.000 abstract description 31
238000004140 cleaning Methods 0.000 abstract description 23
IGELFKKMDLGCJO-UHFFFAOYSA-N xenon difluoride Chemical compound F[Xe]F IGELFKKMDLGCJO-UHFFFAOYSA-N 0.000 abstract 1
GVGCUCJTUSOZKP-UHFFFAOYSA-N nitrogen trifluoride Chemical compound FN(F)F GVGCUCJTUSOZKP-UHFFFAOYSA-N 0.000 description 62
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 48
229910052681 coesite Inorganic materials 0.000 description 41
229910052906 cristobalite Inorganic materials 0.000 description 41
229910052682 stishovite Inorganic materials 0.000 description 41
229910052905 tridymite Inorganic materials 0.000 description 41
238000000151 deposition Methods 0.000 description 31
RPSSQXXJRBEGEE-UHFFFAOYSA-N xenon tetrafluoride Chemical compound F[Xe](F)(F)F RPSSQXXJRBEGEE-UHFFFAOYSA-N 0.000 description 26
239000010408 film Substances 0.000 description 20
238000001157 Fourier transform infrared spectrum Methods 0.000 description 19
239000000758 substrate Substances 0.000 description 18
238000004519 manufacturing process Methods 0.000 description 13
239000010410 layer Substances 0.000 description 12
238000011065 in-situ storage Methods 0.000 description 10
239000010453 quartz Substances 0.000 description 10
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
229910052786 argon Inorganic materials 0.000 description 8
230000000694 effects Effects 0.000 description 8
230000008901 benefit Effects 0.000 description 6
238000005229 chemical vapour deposition Methods 0.000 description 6
-1 F2 Chemical compound 0.000 description 5
229910018503 SF6 Inorganic materials 0.000 description 5
238000006243 chemical reaction Methods 0.000 description 5
238000002474 experimental method Methods 0.000 description 5
238000004377 microelectronic Methods 0.000 description 5
239000007787 solid Substances 0.000 description 5
238000001228 spectrum Methods 0.000 description 5
SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 5
TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 5
230000005284 excitation Effects 0.000 description 4
238000010952 in-situ formation Methods 0.000 description 4
GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 4
229910010342 TiF4 Inorganic materials 0.000 description 3
238000005137 deposition process Methods 0.000 description 3
238000010494 dissociation reaction Methods 0.000 description 3
230000005593 dissociations Effects 0.000 description 3
NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 3
235000012431 wafers Nutrition 0.000 description 3
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
230000009286 beneficial effect Effects 0.000 description 2
239000003795 chemical substances by application Substances 0.000 description 2
150000001875 compounds Chemical class 0.000 description 2
238000011109 contamination Methods 0.000 description 2
230000003247 decreasing effect Effects 0.000 description 2
230000007547 defect Effects 0.000 description 2
238000010894 electron beam technology Methods 0.000 description 2
239000002360 explosive Substances 0.000 description 2
150000004820 halides Chemical class 0.000 description 2
229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
238000002513 implantation Methods 0.000 description 2
229910003465 moissanite Inorganic materials 0.000 description 2
229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
230000001681 protective effect Effects 0.000 description 2
239000011241 protective layer Substances 0.000 description 2
239000003870 refractory metal Substances 0.000 description 2
229910021332 silicide Inorganic materials 0.000 description 2
239000010409 thin film Substances 0.000 description 2
ARUUTJKURHLAMI-UHFFFAOYSA-N xenon hexafluoride Chemical compound F[Xe](F)(F)(F)(F)F ARUUTJKURHLAMI-UHFFFAOYSA-N 0.000 description 2
ZWAWYSBJNBVQHP-UHFFFAOYSA-N xenon trioxide Chemical compound O=[Xe](=O)=O ZWAWYSBJNBVQHP-UHFFFAOYSA-N 0.000 description 2
229910000881 Cu alloy Inorganic materials 0.000 description 1
229910004014 SiF4 Inorganic materials 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
230000002411 adverse Effects 0.000 description 1
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
229910021417 amorphous silicon Inorganic materials 0.000 description 1
238000004458 analytical method Methods 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
230000008859 change Effects 0.000 description 1
238000003486 chemical etching Methods 0.000 description 1
239000012459 cleaning agent Substances 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
230000002596 correlated effect Effects 0.000 description 1
238000000354 decomposition reaction Methods 0.000 description 1
230000007423 decrease Effects 0.000 description 1
239000010432 diamond Substances 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
230000002708 enhancing effect Effects 0.000 description 1
150000002221 fluorine Chemical class 0.000 description 1
150000002222 fluorine compounds Chemical class 0.000 description 1
NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
VJVUOJVKEWVFBF-UHFFFAOYSA-N fluoroxenon Chemical class [Xe]F VJVUOJVKEWVFBF-UHFFFAOYSA-N 0.000 description 1
229910052736 halogen Inorganic materials 0.000 description 1
150000002367 halogens Chemical class 0.000 description 1
230000006872 improvement Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000002401 inhibitory effect Effects 0.000 description 1
239000012212 insulator Substances 0.000 description 1
238000010849 ion bombardment Methods 0.000 description 1
229910052743 krypton Inorganic materials 0.000 description 1
238000001459 lithography Methods 0.000 description 1
238000012423 maintenance Methods 0.000 description 1
238000005259 measurement Methods 0.000 description 1
230000000116 mitigating effect Effects 0.000 description 1
QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
229910052756 noble gas Inorganic materials 0.000 description 1
239000002245 particle Substances 0.000 description 1
239000011236 particulate material Substances 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
230000005855 radiation Effects 0.000 description 1
239000000376 reactant Substances 0.000 description 1
238000011084 recovery Methods 0.000 description 1
238000004064 recycling Methods 0.000 description 1
230000009467 reduction Effects 0.000 description 1
230000008439 repair process Effects 0.000 description 1
230000004044 response Effects 0.000 description 1
230000035939 shock Effects 0.000 description 1
ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
230000002269 spontaneous effect Effects 0.000 description 1
150000003463 sulfur Chemical class 0.000 description 1
229960000909 sulfur hexafluoride Drugs 0.000 description 1
MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
238000012360 testing method Methods 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1
JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
229910021342 tungsten silicide Inorganic materials 0.000 description 1
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Physics & Mathematics (AREA)
General Chemical & Material Sciences (AREA)
Chemical Kinetics & Catalysis (AREA)
Plasma & Fusion (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Drying Of Semiconductors (AREA)

CA2690697A 2009-01-27 2010-01-21 Selective etching and formation of xenon difluoride Abandoned CA2690697A1 (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US12/360,588 US8278222B2 (en)	2005-11-22	2009-01-27	Selective etching and formation of xenon difluoride
US12/360,588		2009-01-27

Publications (1)

Publication Number	Publication Date
CA2690697A1 true CA2690697A1 (en)	2010-07-27

Family

ID=42371448

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CA2690697A Abandoned CA2690697A1 (en)	2009-01-27	2010-01-21	Selective etching and formation of xenon difluoride

Country Status (5)

Country	Link
JP (1)	JP2010177666A (zh)
KR (1)	KR20100087678A (zh)
CN (2)	CN101847570B (zh)
CA (1)	CA2690697A1 (zh)
TW (1)	TWI475611B (zh)

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JP5627990B2 (ja) *	2010-10-25	2014-11-19	Hoya株式会社	インプリント用モールドの製造方法
JP6408396B2 (ja) *	2015-02-17	2018-10-17	三井化学株式会社	ペリクル膜の製造方法、ペリクルの製造方法、およびフォトマスクの製造方法
NL2014497B1 (en) *	2015-03-20	2017-01-19	Asm Int Nv	Method for cleaning deposition apparatus.
CN105537207B (zh) *	2015-12-11	2018-09-25	上海交通大学	一种高温用石英管的清洗方法
CN109463005B (zh) *	2016-06-03	2023-12-15	恩特格里斯公司	二氧化铪和二氧化锆的气相蚀刻
JP6957252B2 (ja) *	2017-07-20	2021-11-02	岩谷産業株式会社	切断加工方法
JP7066263B2 (ja) *	2018-01-23	2022-05-13	株式会社ディスコ	加工方法、エッチング装置、及びレーザ加工装置
CN110718459A (zh) *	2018-07-13	2020-01-21	北京北方华创微电子装备有限公司	非等离子体刻蚀方法及刻蚀设备

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2010
- 2010-01-21 CA CA2690697A patent/CA2690697A1/en not_active Abandoned
- 2010-01-22 TW TW099101850A patent/TWI475611B/zh active
- 2010-01-26 JP JP2010013751A patent/JP2010177666A/ja active Pending
- 2010-01-27 CN CN2010101044846A patent/CN101847570B/zh active Active
- 2010-01-27 CN CN2012100285454A patent/CN102592994A/zh active Pending
- 2010-01-27 KR KR1020100007532A patent/KR20100087678A/ko not_active Application Discontinuation

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JP2010177666A (ja)	2010-08-12
KR20100087678A (ko)	2010-08-05
TW201029065A (en)	2010-08-01
CN101847570A (zh)	2010-09-29
CN101847570B (zh)	2012-11-07
TWI475611B (zh)	2015-03-01
CN102592994A (zh)	2012-07-18

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