KR20080053257A - 패턴 작성 방법 및 하전 입자빔 묘화 장치 - Google Patents
패턴 작성 방법 및 하전 입자빔 묘화 장치 Download PDFInfo
- Publication number
- KR20080053257A KR20080053257A KR1020080041281A KR20080041281A KR20080053257A KR 20080053257 A KR20080053257 A KR 20080053257A KR 1020080041281 A KR1020080041281 A KR 1020080041281A KR 20080041281 A KR20080041281 A KR 20080041281A KR 20080053257 A KR20080053257 A KR 20080053257A
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- South Korea
- Prior art keywords
- pattern
- dimension
- correction
- charged particle
- particle beam
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (4)
- 시료의 패턴 작성 영역으로부터 가상 분할된 복수의 메쉬 형상 영역의 메쉬 형상 영역마다 포함되는 패턴의 면적과,상기 패턴의 외주 변의 길이의 총합을 이용하여 상기 패턴 자체의 치수가 변경되도록 변경 하전 입자빔의 조사량을 보정하는 보정부와,상기 보정된 조사량으로 상기 하전 입자빔을 조사하여 상기 시료에 상기 패턴을 묘화하는 묘화부를 구비한 것을 특징으로 하는 하전 입자빔 묘화 장치.
- 제1항에 있어서, 상기 하전 입자빔 묘화 장치는,상기 패턴의 면적과 패턴의 외주 변의 길이의 총합을 이용하여, 로딩 효과에 의해 생기는 상기 패턴의 치수 오차가 소정의 범위 내로 될 때까지 상기 패턴 치수를 보정한 패턴 치수 보정량을 반복하여 계산하는 치수 보정량 계산부를 구비하고,상기 변경은, 계산된 패턴 치수 보정량을 기초로 하여 행해지는 것을 특징으로 하는 하전 입자빔 묘화 장치.
- 제1항에 있어서, 상기 하전 입자빔 묘화 장치는,로딩 효과에 의해 상기 패턴에서 생기는 패턴 치수 변동량을 상기 패턴의 변의 총합을 이용하여 변조한 패턴 치수 보정량을 구하는 치수 보정량 계산부를 구비하고,상기 변경은, 구한 패턴 치수 보정량을 기초로 하여 행해지는 것을 특징으로 하는 하전 입자빔 묘화 장치.
- 제3항에 있어서, 상기 패턴 치수 보정량은 상기 패턴 치수 보정량의 제곱을 곱함으로써 패턴의 정점의 면적이 구해지는 정점의 정수를 이용하여 변조되는 것을 특징으로 하는 하전 입자빔 묘화 장치.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2006-00036640 | 2006-02-14 | ||
JP2006036640 | 2006-02-14 | ||
JPJP-P-2006-00263817 | 2006-09-28 | ||
JP2006263817A JP5063071B2 (ja) | 2006-02-14 | 2006-09-28 | パタン作成方法及び荷電粒子ビーム描画装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070014622A Division KR100857959B1 (ko) | 2006-02-14 | 2007-02-13 | 패턴 작성 방법 및 하전 입자빔 묘화 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20080053257A true KR20080053257A (ko) | 2008-06-12 |
KR100878970B1 KR100878970B1 (ko) | 2009-01-19 |
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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KR1020070014622A KR100857959B1 (ko) | 2006-02-14 | 2007-02-13 | 패턴 작성 방법 및 하전 입자빔 묘화 장치 |
KR1020080041281A KR100878970B1 (ko) | 2006-02-14 | 2008-05-02 | 하전 입자빔 묘화 장치 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020070014622A KR100857959B1 (ko) | 2006-02-14 | 2007-02-13 | 패턴 작성 방법 및 하전 입자빔 묘화 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7669174B2 (ko) |
JP (1) | JP5063071B2 (ko) |
KR (2) | KR100857959B1 (ko) |
DE (1) | DE102007007080B4 (ko) |
TW (1) | TWI322330B (ko) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7542034B2 (en) | 2004-09-23 | 2009-06-02 | Conversion Works, Inc. | System and method for processing video images |
JP4476975B2 (ja) | 2005-10-25 | 2010-06-09 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置 |
US7619230B2 (en) * | 2005-10-26 | 2009-11-17 | Nuflare Technology, Inc. | Charged particle beam writing method and apparatus and readable storage medium |
JP5063071B2 (ja) | 2006-02-14 | 2012-10-31 | 株式会社ニューフレアテクノロジー | パタン作成方法及び荷電粒子ビーム描画装置 |
JP4976071B2 (ja) * | 2006-02-21 | 2012-07-18 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置 |
JP2008071928A (ja) | 2006-09-14 | 2008-03-27 | Nuflare Technology Inc | 描画パターンのリサイズ方法及び荷電粒子ビーム描画方法 |
JP4378648B2 (ja) * | 2006-10-06 | 2009-12-09 | エルピーダメモリ株式会社 | 照射パターンデータ作成方法、マスク製造方法、及び描画システム |
US8655052B2 (en) | 2007-01-26 | 2014-02-18 | Intellectual Discovery Co., Ltd. | Methodology for 3D scene reconstruction from 2D image sequences |
JP5133087B2 (ja) * | 2007-02-23 | 2013-01-30 | 株式会社ニューフレアテクノロジー | 半導体装置の製造方法 |
US8274530B2 (en) | 2007-03-12 | 2012-09-25 | Conversion Works, Inc. | Systems and methods for filling occluded information for 2-D to 3-D conversion |
JP5020849B2 (ja) | 2008-02-13 | 2012-09-05 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置、パターンの寸法誤差補正装置及びパターンの寸法誤差補正方法 |
JP2009295893A (ja) * | 2008-06-09 | 2009-12-17 | Dainippon Printing Co Ltd | 近接効果補正方法及びその方法を用いた電子線描画装置 |
US7799489B2 (en) * | 2008-09-01 | 2010-09-21 | D2S, Inc. | Method for design and manufacture of a reticle using variable shaped beam lithography |
US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
US9323140B2 (en) | 2008-09-01 | 2016-04-26 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
US7901850B2 (en) | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
US8057970B2 (en) | 2008-09-01 | 2011-11-15 | D2S, Inc. | Method and system for forming circular patterns on a surface |
US9448473B2 (en) | 2009-08-26 | 2016-09-20 | D2S, Inc. | Method for fracturing and forming a pattern using shaped beam charged particle beam lithography |
US9164372B2 (en) | 2009-08-26 | 2015-10-20 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
US9110384B2 (en) * | 2010-01-25 | 2015-08-18 | Hitachi High-Technologies Corporation | Scanning electron microscope |
KR101644640B1 (ko) * | 2010-07-22 | 2016-08-02 | 삼성전자주식회사 | 에피택셜 성장 공정 평가 방법 및 에피택셜막 형성 방법 |
JP5601989B2 (ja) * | 2010-11-19 | 2014-10-08 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
US8626328B2 (en) * | 2011-01-24 | 2014-01-07 | International Business Machines Corporation | Discrete sampling based nonlinear control system |
US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
JP5764364B2 (ja) | 2011-03-31 | 2015-08-19 | 株式会社ニューフレアテクノロジー | 半導体装置の製造方法、描画装置、プログラム及びパターン転写装置 |
US9034542B2 (en) | 2011-06-25 | 2015-05-19 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
US8719739B2 (en) | 2011-09-19 | 2014-05-06 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography |
JP5871558B2 (ja) * | 2011-10-20 | 2016-03-01 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP5841819B2 (ja) * | 2011-11-30 | 2016-01-13 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
JP6057635B2 (ja) * | 2012-09-14 | 2017-01-11 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP6076708B2 (ja) * | 2012-11-21 | 2017-02-08 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビームの照射量チェック方法 |
FR3005170B1 (fr) * | 2013-04-29 | 2017-02-17 | Aselta Nanographics | Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie applicable sur des formes complexes |
JP6167663B2 (ja) * | 2013-05-20 | 2017-07-26 | 大日本印刷株式会社 | 現像ローディング補正プログラム、計算機、描画システム、現像ローディング補正方法 |
JP5674866B2 (ja) * | 2013-06-26 | 2015-02-25 | 株式会社ニューフレアテクノロジー | パターンデータ作成方法、マスク作成方法、半導体装置の製造方法、パターン作成方法及びプログラム |
JP6283180B2 (ja) | 2013-08-08 | 2018-02-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP6456118B2 (ja) * | 2014-11-20 | 2019-01-23 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP6548982B2 (ja) | 2014-11-28 | 2019-07-24 | 株式会社ニューフレアテクノロジー | 描画データの作成方法 |
JP6720861B2 (ja) * | 2016-12-28 | 2020-07-08 | 株式会社ニューフレアテクノロジー | マルチビーム用アパーチャセット及びマルチ荷電粒子ビーム描画装置 |
WO2018235669A1 (ja) * | 2017-06-19 | 2018-12-27 | 大日本印刷株式会社 | 図形パターンの形状補正装置および形状補正方法 |
JP7026575B2 (ja) * | 2018-05-22 | 2022-02-28 | 株式会社ニューフレアテクノロジー | 電子ビーム照射方法、電子ビーム照射装置、及びプログラム |
CN109634053A (zh) * | 2018-12-21 | 2019-04-16 | 苏州苏纳光电有限公司 | 基于图形补偿的光刻版及其制作方法 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63238665A (ja) * | 1987-03-26 | 1988-10-04 | Toshiba Corp | 離散化用3角形メツシユの形成装置 |
IL97022A0 (en) | 1991-01-24 | 1992-03-29 | Ibm Israel | Partitioning method for e-beam lithography |
JP2614691B2 (ja) * | 1992-01-23 | 1997-05-28 | 旭化成工業株式会社 | 型紙の組立形状視覚化方法および装置 |
JPH06138643A (ja) * | 1992-10-30 | 1994-05-20 | Toshiba Corp | 半導体装置用ガラスマスクおよびその製造方法 |
JP3900296B2 (ja) * | 1994-09-16 | 2007-04-04 | 株式会社ルネサステクノロジ | パタン形成方法及び集積回路の製造方法 |
JP3743120B2 (ja) * | 1997-02-21 | 2006-02-08 | ソニー株式会社 | 露光用マスクのマスクパターン設計方法、並びに半導体集積回路の作製方法 |
JP2000075467A (ja) * | 1998-08-31 | 2000-03-14 | Matsushita Electronics Industry Corp | フォトマスク及びその製造方法、並びにそのフォトマスクを用いた半導体装置の製造方法 |
JP3360662B2 (ja) | 1999-10-05 | 2002-12-24 | 日本電気株式会社 | 電子線ビーム描画方法および電子線ビーム描画用マスク |
US6815693B2 (en) | 2000-02-18 | 2004-11-09 | Nikon Corporation | Charged-particle-beam microlithography apparatus and methods including proximity-effect correction |
JP4031752B2 (ja) * | 2000-10-02 | 2008-01-09 | 松下電器産業株式会社 | 半導体集積回路装置の製造方法 |
JP3593079B2 (ja) * | 2000-10-02 | 2004-11-24 | 松下電器産業株式会社 | 半導体集積回路装置及びその製造方法 |
US7499045B2 (en) * | 2001-08-01 | 2009-03-03 | International Business Machines Corporation | Graphics image generation |
JP4048752B2 (ja) * | 2001-10-04 | 2008-02-20 | 凸版印刷株式会社 | パターンデータ補正方法、パターンデータ補正装置およびそのプログラム |
JP3686367B2 (ja) * | 2001-11-15 | 2005-08-24 | 株式会社ルネサステクノロジ | パターン形成方法および半導体装置の製造方法 |
JP2003195478A (ja) * | 2001-12-26 | 2003-07-09 | Sony Corp | フォトマスクの作製方法 |
JP4189232B2 (ja) | 2002-02-08 | 2008-12-03 | 株式会社東芝 | パターン形成方法および描画方法 |
JP2004126486A (ja) * | 2002-07-31 | 2004-04-22 | Fujitsu Ltd | パターン寸法補正装置及びパターン寸法補正方法 |
JP4543614B2 (ja) * | 2003-03-18 | 2010-09-15 | 凸版印刷株式会社 | フォトマスクの製造方法および半導体集積回路の製造方法 |
JP2004333529A (ja) * | 2003-04-30 | 2004-11-25 | Sony Corp | 露光マスクの作製方法 |
JP2004048018A (ja) | 2003-07-22 | 2004-02-12 | Hitachi Ltd | 電子線描画装置および電子線を用いた描画方法 |
JP4461806B2 (ja) * | 2004-01-06 | 2010-05-12 | 凸版印刷株式会社 | パターン描画装置及びパターン描画方法ならびにそのプログラム、フォトマスクとその製造方法および半導体集積回路とその製造方法 |
US20050221200A1 (en) * | 2004-04-01 | 2005-10-06 | Matrix Semiconductor, Inc. | Photomask features with chromeless nonprinting phase shifting window |
US7038204B2 (en) * | 2004-05-26 | 2006-05-02 | International Business Machines Corporation | Method for reducing proximity effects in electron beam lithography |
JP4476975B2 (ja) * | 2005-10-25 | 2010-06-09 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム照射量演算方法、荷電粒子ビーム描画方法、プログラム及び荷電粒子ビーム描画装置 |
JP5063071B2 (ja) | 2006-02-14 | 2012-10-31 | 株式会社ニューフレアテクノロジー | パタン作成方法及び荷電粒子ビーム描画装置 |
JP5133087B2 (ja) | 2007-02-23 | 2013-01-30 | 株式会社ニューフレアテクノロジー | 半導体装置の製造方法 |
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2006
- 2006-09-28 JP JP2006263817A patent/JP5063071B2/ja active Active
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2007
- 2007-02-05 US US11/671,243 patent/US7669174B2/en active Active
- 2007-02-07 TW TW096104399A patent/TWI322330B/zh active
- 2007-02-13 DE DE102007007080.4A patent/DE102007007080B4/de active Active
- 2007-02-13 KR KR1020070014622A patent/KR100857959B1/ko active IP Right Grant
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- 2008-05-02 KR KR1020080041281A patent/KR100878970B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR100857959B1 (ko) | 2008-09-09 |
KR20070082031A (ko) | 2007-08-20 |
DE102007007080B4 (de) | 2016-02-11 |
TWI322330B (en) | 2010-03-21 |
TW200801790A (en) | 2008-01-01 |
US20070192757A1 (en) | 2007-08-16 |
US7669174B2 (en) | 2010-02-23 |
JP5063071B2 (ja) | 2012-10-31 |
JP2007249167A (ja) | 2007-09-27 |
KR100878970B1 (ko) | 2009-01-19 |
DE102007007080A1 (de) | 2007-11-22 |
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