KR20060050562A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
- Publication number
- KR20060050562A KR20060050562A KR1020050077163A KR20050077163A KR20060050562A KR 20060050562 A KR20060050562 A KR 20060050562A KR 1020050077163 A KR1020050077163 A KR 1020050077163A KR 20050077163 A KR20050077163 A KR 20050077163A KR 20060050562 A KR20060050562 A KR 20060050562A
- Authority
- KR
- South Korea
- Prior art keywords
- switching element
- gate
- circuit
- igbt
- voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 230000001939 inductive effect Effects 0.000 claims abstract description 24
- 230000015556 catabolic process Effects 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 17
- 238000010891 electric arc Methods 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 5
- 238000002485 combustion reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P3/00—Other installations
- F02P3/02—Other installations having inductive energy storage, e.g. arrangements of induction coils
- F02P3/04—Layout of circuits
- F02P3/05—Layout of circuits for control of the magnitude of the current in the ignition coil
- F02P3/051—Opening or closing the primary coil circuit with semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F02—COMBUSTION ENGINES; HOT-GAS OR COMBUSTION-PRODUCT ENGINE PLANTS
- F02P—IGNITION, OTHER THAN COMPRESSION IGNITION, FOR INTERNAL-COMBUSTION ENGINES; TESTING OF IGNITION TIMING IN COMPRESSION-IGNITION ENGINES
- F02P9/00—Electric spark ignition control, not otherwise provided for
- F02P9/002—Control of spark intensity, intensifying, lengthening, suppression
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Electronic Switches (AREA)
- Ignition Installations For Internal Combustion Engines (AREA)
Abstract
Description
Claims (3)
- 전류입력 단자에 유도부하가 접속되는 스위칭 소자와,상기 스위칭 소자의 제어 단자·전류입력 단자 사이에 접속된 클램프 소자와,상기 스위칭 소자의 제어 단자·접지전위 사이에 접속된 방전 저항부를 구비하고,상기 스위칭 소자를 구동하는 것에 의해, 상기 유도부하에 유도 기전압을 발생시키는 반도체 장치에 있어서,상기 스위칭 소자를 온 상태로 구동하기 위한 온 신호가 소정시간 이상 입력되면, 상기 방전 저항부에 소정의 신호를 출력하는 타이머 회로를 더 구비하고,상기 방전 저항부는, 상기 소정의 신호에 응답하고, 그 저항값을 큰 값으로 변경하는 것을 특징으로 하는 반도체 장치.
- 전류입력 단자에 유도부하가 접속되는 스위칭 소자와,상기 스위칭 소자의 제어 단자·전류입력 단자 사이에 접속된 제1클램프 소자와,상기 스위칭 소자의 제어 단자·접지전위 사이에 접속된 방전 저항부를 구비하고,상기 스위칭 소자를 구동하는 것에 의해, 상기 유도부하에 유도 기전압을 발생시키는 반도체 장치에 있어서,상기 스위칭 소자를 온 상태로 구동하기 위한 온 신호가 소정시간 이상 입력되면, 소정의 신호를 출력하는 타이머 회로와,상기 소정의 신호에 응답하고, 상기 스위칭 소자의 제어 단자·전류입력단자 사이에 선택적으로 접속되는 제2클램프 소자를 더 구비하고,상기 제2클램프 소자는, 상기 제1클램프 소자의 항복 전압보다도 작은 항복 전압을 갖는 것을 특징으로 하는 반도체 장치.
- 전류입력 단자에 유도부하가 접속되는 스위칭 소자와,상기 스위칭 소자의 제어 단자·전류입력 단자 사이에 접속된 제1클램프 소자와,상기 스위칭 소자의 제어 단자·접지전위 사이에 접속된 방전 저항부를 구비하고,상기 스위칭 소자를 구동하는 것에 의해, 상기 유도부하에 유도 기전압을 발생시키는 반도체 장치에 있어서,상기 스위칭 소자의 전류입력 단자에 일단이 접속된 제2클램프 소자와,상기 제2클램프 소자의 타단에 전류입력 단자가 접속되고, 전류출력 단자가 상기 스위칭 소자의 제어 단자에 접속된 트랜지스터와,상기 트랜지스터의 상기 전류입력 단자에 일단이 접속되고, 접지전위에 타단이 접속된 제3클램프 소자와,상기 제3클램프 소자의 상기 일단에 접속된 과전압 검출회로를 더 구비하고,상기 과전압 검출회로는, 상기 제3클램프 소자에 항복 전압이 인가되면, 상기 스위칭 소자를 오프 상태로 구동하는 신호를 출력하는 것을 특징으로 하는 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004295676A JP4455972B2 (ja) | 2004-10-08 | 2004-10-08 | 半導体装置 |
JPJP-P-2004-00295676 | 2004-10-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060050562A true KR20060050562A (ko) | 2006-05-19 |
KR100748570B1 KR100748570B1 (ko) | 2007-08-10 |
Family
ID=36120718
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050077163A KR100748570B1 (ko) | 2004-10-08 | 2005-08-23 | 반도체 장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7176744B2 (ko) |
JP (1) | JP4455972B2 (ko) |
KR (1) | KR100748570B1 (ko) |
DE (1) | DE102005022309B4 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160001612A (ko) * | 2014-06-27 | 2016-01-06 | 파나소닉 디바이스 썬크스 주식회사 | 출력 회로 및 검출 센서 |
Families Citing this family (34)
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JP4337711B2 (ja) * | 2004-11-17 | 2009-09-30 | 株式会社デンソー | 半導体素子制御装置 |
DE102005045099B4 (de) * | 2005-09-21 | 2011-05-05 | Infineon Technologies Ag | Entsättigungsschaltung mit einem IGBT |
US7667526B2 (en) * | 2006-07-31 | 2010-02-23 | Infineon Technologies Austria Ag | Apparatus, system, and method for multifunctional pin in an integrated circuit |
JP4349398B2 (ja) | 2006-09-05 | 2009-10-21 | トヨタ自動車株式会社 | スイッチング素子駆動装置及びスイッチング素子駆動方法 |
JP2008278670A (ja) * | 2007-05-01 | 2008-11-13 | Funai Electric Co Ltd | 他励式インバータ回路及び液晶テレビジョン |
JP2008278291A (ja) * | 2007-05-01 | 2008-11-13 | Funai Electric Co Ltd | 他励式インバータ回路及び液晶テレビジョン |
JP4536108B2 (ja) * | 2007-12-12 | 2010-09-01 | Okiセミコンダクタ株式会社 | 負荷駆動回路 |
JP4911367B2 (ja) * | 2008-02-12 | 2012-04-04 | 株式会社デンソー | 内燃機関用点火装置 |
JP4911060B2 (ja) * | 2008-02-12 | 2012-04-04 | 株式会社デンソー | 内燃機関用点火装置 |
KR101014152B1 (ko) * | 2008-10-15 | 2011-02-14 | 기아자동차주식회사 | 차량 인버터 회로 및 그를 이용한 차량 |
JP5423378B2 (ja) * | 2009-12-15 | 2014-02-19 | 三菱電機株式会社 | イグナイタ用電力半導体装置 |
JP5485108B2 (ja) | 2010-10-28 | 2014-05-07 | 株式会社 日立パワーデバイス | 半導体装置、およびそれを用いた超音波診断装置 |
US8760218B2 (en) | 2012-05-07 | 2014-06-24 | General Electric Company | System and method for operating an electric power converter |
ITMI20120893A1 (it) | 2012-05-23 | 2013-11-24 | St Microelectronics Srl | Sistema di accensione elettronica per il motore di un veicolo in caso di guasto |
KR101707366B1 (ko) * | 2013-04-02 | 2017-02-15 | 미쓰비시덴키 가부시키가이샤 | 반도체 장치 |
JP5929817B2 (ja) * | 2013-04-16 | 2016-06-08 | 株式会社デンソー | 駆動制御回路および内燃機関点火装置 |
JP5983552B2 (ja) * | 2013-07-19 | 2016-08-31 | 株式会社デンソー | 定電流定電圧回路 |
DE102013217682B4 (de) * | 2013-09-04 | 2022-06-30 | Vitesco Technologies Germany Gmbh | Schaltungsanordnung zum sicheren Öffnen eines Leistungsschalters, Stromrichter und Antriebsanordnung mit einer Schaltungsanordnung |
JP6459917B2 (ja) * | 2015-11-17 | 2019-01-30 | 株式会社デンソー | 通電素子駆動装置 |
JP6690246B2 (ja) * | 2016-01-12 | 2020-04-28 | 富士電機株式会社 | 半導体装置 |
JP6805496B2 (ja) | 2016-01-15 | 2020-12-23 | 富士電機株式会社 | 半導体装置 |
JP6672816B2 (ja) * | 2016-01-15 | 2020-03-25 | 富士電機株式会社 | スイッチ装置 |
JP6707874B2 (ja) * | 2016-01-29 | 2020-06-10 | 富士電機株式会社 | 半導体装置 |
JP6805622B2 (ja) * | 2016-08-12 | 2020-12-23 | 富士電機株式会社 | 半導体装置 |
DE102017002573B4 (de) | 2017-03-16 | 2019-07-04 | Infineon Technologies Ag | Überspannungsschutz |
US10637469B2 (en) * | 2017-07-19 | 2020-04-28 | Hamilton Sunstrand Corporation | Solenoid fast shut-off circuit network |
FR3075276B1 (fr) * | 2017-12-19 | 2022-06-17 | Continental Automotive France | Circuit d'allumage d'une bougie d'un moteur de vehicule |
DE112018007049T5 (de) * | 2018-02-09 | 2020-10-22 | Mitsubishi Electric Corporation | Halbleitervorrichtung |
US11448178B2 (en) * | 2018-03-13 | 2022-09-20 | Rohm Co., Ltd. | Switch control circuit and igniter |
US11274645B2 (en) * | 2019-10-15 | 2022-03-15 | Semiconductor Components Industries, Llc | Circuit and method for a kickback-limited soft shutdown of a coil |
JP7356340B2 (ja) * | 2019-12-25 | 2023-10-04 | 株式会社タムラ製作所 | ゲート駆動回路 |
US11606086B2 (en) * | 2020-05-08 | 2023-03-14 | Hamilton Sundstrand Corporation | Desaturation circuit for MOSFET with high noise immunity and fast detection |
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JPH0828415A (ja) * | 1994-07-14 | 1996-01-30 | Hitachi Ltd | 内燃機関用点火装置 |
DE4428675A1 (de) * | 1994-08-12 | 1996-02-15 | Siemens Ag | Schaltungsanordnung zum Schutz eines abschaltbaren Leistungshalbleiter-Schalters vor Überspannungen |
US5569982A (en) * | 1995-05-17 | 1996-10-29 | International Rectifier Corporation | Clamping circuit for IGBT in spark plug ignition system |
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2004
- 2004-10-08 JP JP2004295676A patent/JP4455972B2/ja active Active
-
2005
- 2005-04-14 US US11/105,394 patent/US7176744B2/en active Active
- 2005-05-13 DE DE102005022309A patent/DE102005022309B4/de active Active
- 2005-08-23 KR KR1020050077163A patent/KR100748570B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160001612A (ko) * | 2014-06-27 | 2016-01-06 | 파나소닉 디바이스 썬크스 주식회사 | 출력 회로 및 검출 센서 |
Also Published As
Publication number | Publication date |
---|---|
US20060077000A1 (en) | 2006-04-13 |
DE102005022309B4 (de) | 2012-06-14 |
KR100748570B1 (ko) | 2007-08-10 |
JP4455972B2 (ja) | 2010-04-21 |
DE102005022309A1 (de) | 2006-04-20 |
US7176744B2 (en) | 2007-02-13 |
JP2006109286A (ja) | 2006-04-20 |
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