KR20060041997A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20060041997A KR20060041997A KR1020050012781A KR20050012781A KR20060041997A KR 20060041997 A KR20060041997 A KR 20060041997A KR 1020050012781 A KR1020050012781 A KR 1020050012781A KR 20050012781 A KR20050012781 A KR 20050012781A KR 20060041997 A KR20060041997 A KR 20060041997A
- Authority
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- South Korea
- Prior art keywords
- via hole
- pad electrode
- semiconductor substrate
- main surface
- forming
- Prior art date
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Abstract
Description
Claims (9)
- 패드 전극이 형성된 반도체 기판을 준비하고, 상기 반도체 기판의 제1 주면에 지지체를 접착하는 공정과,상기 반도체 기판의 제2 주면으로부터 상기 패드 전극의 표면에 도달하는 비아홀을 형성함과 동시에, 다이싱 라인을 따라 연장되고, 또한 상기 반도체 기판의 제2 주면으로부터 상기 반도체 기판을 관통하는 홈을 형성하는 공정을 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제1항에 있어서,상기 홈을 형성하는 공정 후에, 상기 지지체가 접착된 상기 반도체 기판을 가열하는 공정을 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 패드 전극이 형성된 반도체 기판을 준비하고, 상기 반도체 기판의 제1 주면에 지지체를 접착하는 공정과,상기 반도체 기판의 제2 주면으로부터 상기 패드 전극의 표면에 도달하는 비아홀을 형성함과 동시에, 다이싱 라인을 따라 연장되고, 또한 상기 반도체 기판의 제2 주면으로부터 상기 반도체 기판을 관통하는 홈을 형성하는 공정과,상기 비아홀 내를 포함하는 상기 반도체 기판의 제2 주면의 전면에 제1 절연막을 형성하는 공정과,상기 제1 절연막을 이방성 에칭하여, 상기 비아홀의 바닥부에 위치하는 제1 절연막을 제거하여, 상기 비아홀 및 상기 홈의 측벽에 측벽 절연막을 형성하는 공정과,상기 비아홀을 통해서, 상기 패드 전극과 전기적으로 접속되고, 또한 상기 비아홀로부터 상기 홈 내에 연장되는 배선층을 형성하는 공정을 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항에 있어서,상기 배선층을 형성하는 공정은, 도금법 또는 스퍼터법에 의해 행해지는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 제3항에 있어서,상기 배선층 위를 피복하는 보호층을 형성하는 공정과,상기 배선층 위에 도전 단자를 형성하는 공정을 구비하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 반도체 칩의 제1 주면 위에 형성된 패드 전극과,상기 반도체 칩의 제1 주면에 접착된 지지체와,상기 반도체 칩의 제2 주면으로부터 상기 패드 전극의 표면으로 관통하는 비아홀과,상기 비아홀의 측벽 및 상기 반도체 칩의 측면에 형성된 측벽 절연막과,상기 비아홀을 통해서, 상기 패드 전극과 전기적으로 접속된 배선층을 구비하는 것을 특징으로 하는 반도체 장치.
- 제6항에 있어서,상기 배선층은 도금법 또는 스퍼터법에 의해 형성되어 있는 것을 특징으로 하는 반도체 장치.
- 제6항에 있어서,상기 배선층 위를 피복하도록 형성된 보호층과,상기 배선층 위에 형성된 도전 단자를 구비하는 것을 특징으로 하는 반도체 장치.
- 패드 전극이 형성된 반도체 기판의 제1 주면에 접착된 지지체와, 상기 반도체 기판의 제2 주면으로부터 상기 패드 전극의 표면에 도달하도록 형성된 비아홀과, 다이싱 라인을 따라 다이싱된 측단부에 에칭된 면을 갖는 것을 특징으로 하는 반도체 장치.
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JP2004040408A JP4307284B2 (ja) | 2004-02-17 | 2004-02-17 | 半導体装置の製造方法 |
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- 2005-02-17 EP EP05003397.6A patent/EP1564807B1/en active Active
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KR20230015714A (ko) * | 2021-07-23 | 2023-01-31 | 주식회사 네패스라웨 | 반도체 패키지 |
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CN1658372A (zh) | 2005-08-24 |
KR100671921B1 (ko) | 2007-01-24 |
US8278213B2 (en) | 2012-10-02 |
US20050194670A1 (en) | 2005-09-08 |
EP1564807A2 (en) | 2005-08-17 |
JP4307284B2 (ja) | 2009-08-05 |
EP1564807A3 (en) | 2008-10-01 |
JP2005235859A (ja) | 2005-09-02 |
EP1564807B1 (en) | 2013-04-10 |
CN100385621C (zh) | 2008-04-30 |
TWI346995B (en) | 2011-08-11 |
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