KR20050115939A - 반도체 웨이퍼용 열처리 치구 - Google Patents
반도체 웨이퍼용 열처리 치구 Download PDFInfo
- Publication number
- KR20050115939A KR20050115939A KR1020057018427A KR20057018427A KR20050115939A KR 20050115939 A KR20050115939 A KR 20050115939A KR 1020057018427 A KR1020057018427 A KR 1020057018427A KR 20057018427 A KR20057018427 A KR 20057018427A KR 20050115939 A KR20050115939 A KR 20050115939A
- Authority
- KR
- South Korea
- Prior art keywords
- heat treatment
- semiconductor wafer
- diameter
- jig
- treatment jig
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 106
- 230000003746 surface roughness Effects 0.000 claims abstract description 49
- 238000010438 heat treatment Methods 0.000 claims description 186
- 235000012431 wafers Nutrition 0.000 claims description 178
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 239000010439 graphite Substances 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021426 porous silicon Inorganic materials 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 238000005259 measurement Methods 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 4
- 230000035882 stress Effects 0.000 description 17
- 238000005422 blasting Methods 0.000 description 13
- 230000001105 regulatory effect Effects 0.000 description 7
- 238000011282 treatment Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67309—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by the substrate support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (12)
- 반도체 웨이퍼를 그 상면에 탑재하여 열처리하는 원판형상의 열처리 치구(治具)에 있어서,원판형상의 직경은 탑재되는 반도체 웨이퍼의 직경의 60% 이상으로 되고,그 두께는 1.0mm 이상, 10mm 이하이고,상기 반도체 웨이퍼와 접촉하는 면의 표면조도(Ra값)는 0.1㎛ 이상, 100㎛ 이하이며,그 평탄도는, 동심원 방향의 평탄도로서 0.1mm 이하이고, 또한 직경 방향의 평탄도로서 0.2mm 이하인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제1항에 있어서,상기 반도체 웨이퍼와 접촉하는 면의 직경은 그 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제1항에 있어서,상기 반도체 웨이퍼와 접촉하는 면은 링(ring) 형상이며, 그 외경은 상기 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제1항 내지 제3항에 있어서,상기 반도체 웨이퍼와 접촉하는 면에 복수의 돌출부 영역을 설치하고, 중심에 대하여 점대칭으로 배치한 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제4항에 있어서,상기 복수의 돌출부 영역의 평면형상은, 직경이 5.Omm 이상, 30.Omm 이하의 원형인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제1항 내지 제4항에 있어서,기재재료(基材材料)가 실리콘 함침 실리콘 카바이드, 실리콘 카바이드, 다공질 실리콘 카바이드, 석영, 실리콘, 그래파이트 및 글래시 카본 중 어느 하나로 이루어지는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제6항에 있어서,상기 기재재료에 막 두께가 10㎛ 이상, 150㎛ 이하의 실리콘 카바이드(SiC)를 더 코팅하는 것을 특징으로 하는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 반도체 웨이퍼를 그 상면에 탑재하여 열처리하는 원판형상의 열처리 치구에 있어서,원판형상의 직경은 탑재되는 반도체 웨이퍼의 직경의 60% 이상이고,그 두께는 1.Omm 이상, 10mm 이하이고,상기 반도체 웨이퍼와 접촉하는 면의 표면조도(Ra값)는 0.05㎛ 이상, 100㎛ 이하이며,상기 반도체 웨이퍼와 접촉하는 표면을 다수영역으로 분할하고, 영역마다 최대 높이를 측정하고, 각 영역의 최대 높이와 상기 측정값으로부터 구해진 가상평균값 면과의 차이가 50㎛ 이하인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제8항에 있어서,상기 반도체 웨이퍼와 접촉하는 면의 직경은 그 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제8항에 있어서,상기 반도체 웨이퍼와 접촉하는 면은 링 형상이며, 그 외경은 상기 반도체 웨이퍼의 직경의 60% 이상인 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제8항 내지 제10항에 있어서,기재재료는 실리콘 함침 실리콘 카바이드, 실리콘 카바이드, 다공질 실리콘 카바이드, 석영, 실리콘, 그래파이트 및 글래시 카본 중 어느 하나로 이루어지는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
- 제11항에 있어서,상기 기재재료에 막 두께가 10㎛ 이상, 150㎛ 이하의 실리콘 카바이드(SiC)를 더 코팅하는 것을 특징으로 하는 반도체 웨이퍼용 열처리 치구.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003099709 | 2003-04-02 | ||
JPJP-P-2003-00099709 | 2003-04-02 | ||
PCT/JP2004/003442 WO2004090967A1 (ja) | 2003-04-02 | 2004-03-15 | 半導体ウェーハ用熱処理治具 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050115939A true KR20050115939A (ko) | 2005-12-08 |
KR100758965B1 KR100758965B1 (ko) | 2007-09-14 |
Family
ID=33156706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057018427A KR100758965B1 (ko) | 2003-04-02 | 2004-03-15 | 반도체 웨이퍼용 열처리 치구 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7331780B2 (ko) |
EP (1) | EP1615261B8 (ko) |
JP (1) | JPWO2004090967A1 (ko) |
KR (1) | KR100758965B1 (ko) |
CN (1) | CN100517612C (ko) |
TW (1) | TWI242831B (ko) |
WO (1) | WO2004090967A1 (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829279B1 (ko) * | 2005-08-12 | 2008-05-13 | 가부시키가이샤 섬코 | 반도체 실리콘 기판용 열처리 지그 및 그 제작 방법 |
KR20140118905A (ko) * | 2013-03-28 | 2014-10-08 | 미쓰비시 마테리알 가부시키가이샤 | 실리콘 부재 및 실리콘 부재의 제조 방법 |
KR20170085960A (ko) * | 2016-01-15 | 2017-07-25 | 도쿄엘렉트론가부시키가이샤 | 적재대의 표면 처리 방법, 적재대 및 플라즈마 처리 장치 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4534619B2 (ja) * | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
KR100852975B1 (ko) * | 2004-08-06 | 2008-08-19 | 가부시키가이샤 히다치 고쿠사이 덴키 | 열처리 장치 및 기판의 제조 방법 |
KR100875464B1 (ko) * | 2004-09-30 | 2008-12-22 | 가부시키가이샤 히다치 고쿠사이 덴키 | 열처리 장치 및 기판의 제조방법 |
CN101061578A (zh) * | 2004-10-19 | 2007-10-24 | 佳能安内华股份有限公司 | 基板支撑·运送用托盘 |
US20060144337A1 (en) * | 2005-01-06 | 2006-07-06 | Hsien-Che Teng | Heater for heating a wafer and method for preventing contamination of the heater |
DE102005013831B4 (de) * | 2005-03-24 | 2008-10-16 | Siltronic Ag | Siliciumscheibe und Verfahren zur thermischen Behandlung einer Siliciumscheibe |
US7622803B2 (en) * | 2005-08-30 | 2009-11-24 | Cree, Inc. | Heat sink assembly and related methods for semiconductor vacuum processing systems |
EP1772901B1 (en) * | 2005-10-07 | 2012-07-25 | Rohm and Haas Electronic Materials, L.L.C. | Wafer holding article and method for semiconductor processing |
JP2007201417A (ja) * | 2005-12-28 | 2007-08-09 | Tokyo Electron Ltd | 熱処理用ボート及び縦型熱処理装置 |
JP2007281030A (ja) * | 2006-04-03 | 2007-10-25 | Sumco Corp | シリコンウェーハの保持方法 |
JP2008021888A (ja) * | 2006-07-14 | 2008-01-31 | Nec Electronics Corp | 治具装置 |
JP2008108926A (ja) * | 2006-10-26 | 2008-05-08 | Bridgestone Corp | ウェハ熱処理用治具 |
JP4864757B2 (ja) * | 2007-02-14 | 2012-02-01 | 東京エレクトロン株式会社 | 基板載置台及びその表面処理方法 |
JP5745394B2 (ja) * | 2008-03-20 | 2015-07-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板支持体、プラズマ反応装置、および、サセプターを形成する方法 |
US8042697B2 (en) * | 2008-06-30 | 2011-10-25 | Memc Electronic Materials, Inc. | Low thermal mass semiconductor wafer support |
JP5000597B2 (ja) * | 2008-07-22 | 2012-08-15 | Sumco Techxiv株式会社 | 半導体ウェーハの支持具 |
US20100055318A1 (en) * | 2008-08-29 | 2010-03-04 | Veeco Instruments Inc. | Wafer carrier with varying thermal resistance |
JP5498678B2 (ja) * | 2008-09-25 | 2014-05-21 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの製造方法 |
US8486726B2 (en) | 2009-12-02 | 2013-07-16 | Veeco Instruments Inc. | Method for improving performance of a substrate carrier |
US8420554B2 (en) | 2010-05-03 | 2013-04-16 | Memc Electronic Materials, Inc. | Wafer support ring |
US9227295B2 (en) | 2011-05-27 | 2016-01-05 | Corning Incorporated | Non-polished glass wafer, thinning system and method for using the non-polished glass wafer to thin a semiconductor wafer |
US9464362B2 (en) | 2012-07-18 | 2016-10-11 | Deca Technologies Inc. | Magnetically sealed wafer plating jig system and method |
US10316412B2 (en) | 2012-04-18 | 2019-06-11 | Veeco Instruments Inc. | Wafter carrier for chemical vapor deposition systems |
US10167571B2 (en) | 2013-03-15 | 2019-01-01 | Veeco Instruments Inc. | Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems |
JP5991284B2 (ja) * | 2013-08-23 | 2016-09-14 | 信越半導体株式会社 | シリコンウェーハの熱処理方法 |
CN105684133B (zh) * | 2013-11-06 | 2020-05-15 | 应用材料公司 | 溶胶凝胶涂布的支撑环 |
CN103743239B (zh) * | 2013-12-27 | 2015-05-20 | 深圳市华星光电技术有限公司 | 石英卡夹装置及其制作方法与带该石英卡夹装置的oled高温炉 |
JP6335587B2 (ja) * | 2014-03-31 | 2018-05-30 | 株式会社荏原製作所 | 基板保持機構、基板搬送装置、半導体製造装置 |
KR102651767B1 (ko) * | 2015-05-28 | 2024-03-28 | 에이지씨 가부시키가이샤 | 유리 기판 및 적층 기판 |
JP7030604B2 (ja) * | 2018-04-19 | 2022-03-07 | 三菱電機株式会社 | ウエハボートおよびその製造方法 |
CN111942882B (zh) * | 2020-08-13 | 2022-06-10 | 长春中科长光时空光电技术有限公司 | 一种晶圆卸取设备 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5242501A (en) * | 1982-09-10 | 1993-09-07 | Lam Research Corporation | Susceptor in chemical vapor deposition reactors |
DE8321679U1 (de) * | 1983-07-27 | 1983-12-01 | Norton Co., 01606 Worcester, Mass. | Platte aus feuerfestem material |
NL9300389A (nl) * | 1993-03-04 | 1994-10-03 | Xycarb Bv | Substraatdrager. |
US5514439A (en) * | 1994-10-14 | 1996-05-07 | Sibley; Thomas | Wafer support fixtures for rapid thermal processing |
US5761023A (en) * | 1996-04-25 | 1998-06-02 | Applied Materials, Inc. | Substrate support with pressure zones having reduced contact area and temperature feedback |
US6001183A (en) * | 1996-06-10 | 1999-12-14 | Emcore Corporation | Wafer carriers for epitaxial growth processes |
JP3692697B2 (ja) * | 1997-03-25 | 2005-09-07 | 三菱住友シリコン株式会社 | ウェハ支持体及び縦型ボート |
JPH113865A (ja) | 1997-04-15 | 1999-01-06 | Sumitomo Metal Ind Ltd | ウエハー積載用ボート及びその製造方法 |
JPH10321543A (ja) * | 1997-05-20 | 1998-12-04 | Sumitomo Metal Ind Ltd | ウェハ支持体及び縦型ボート |
US6264467B1 (en) * | 1999-04-14 | 2001-07-24 | Applied Materials, Inc. | Micro grooved support surface for reducing substrate wear and slip formation |
WO2001018856A1 (fr) * | 1999-09-03 | 2001-03-15 | Mitsubishi Materials Silicon Corporation | Support de tranche |
JP2001284275A (ja) * | 2000-03-29 | 2001-10-12 | Toshiba Ceramics Co Ltd | CVD−SiC膜被覆半導体熱処理用部材 |
US6634882B2 (en) * | 2000-12-22 | 2003-10-21 | Asm America, Inc. | Susceptor pocket profile to improve process performance |
US6896738B2 (en) * | 2001-10-30 | 2005-05-24 | Cree, Inc. | Induction heating devices and methods for controllably heating an article |
JP2003197722A (ja) | 2001-12-26 | 2003-07-11 | Toshiba Ceramics Co Ltd | 半導体ウェーハ熱処理用治具及びこれを用いた熱処理用装置並びに半導体ウェーハ熱処理用治具の製造方法 |
US7256375B2 (en) * | 2002-08-30 | 2007-08-14 | Asm International N.V. | Susceptor plate for high temperature heat treatment |
US6709267B1 (en) * | 2002-12-27 | 2004-03-23 | Asm America, Inc. | Substrate holder with deep annular groove to prevent edge heat loss |
JP4534619B2 (ja) * | 2004-06-21 | 2010-09-01 | 株式会社Sumco | 半導体シリコン基板用熱処理治具 |
-
2004
- 2004-03-15 CN CNB2004800093087A patent/CN100517612C/zh not_active Expired - Lifetime
- 2004-03-15 EP EP04720720.4A patent/EP1615261B8/en not_active Expired - Lifetime
- 2004-03-15 JP JP2005505180A patent/JPWO2004090967A1/ja active Pending
- 2004-03-15 WO PCT/JP2004/003442 patent/WO2004090967A1/ja active Application Filing
- 2004-03-15 KR KR1020057018427A patent/KR100758965B1/ko active IP Right Grant
- 2004-03-24 TW TW093107988A patent/TWI242831B/zh not_active IP Right Cessation
-
2005
- 2005-09-30 US US11/239,096 patent/US7331780B2/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829279B1 (ko) * | 2005-08-12 | 2008-05-13 | 가부시키가이샤 섬코 | 반도체 실리콘 기판용 열처리 지그 및 그 제작 방법 |
KR20140118905A (ko) * | 2013-03-28 | 2014-10-08 | 미쓰비시 마테리알 가부시키가이샤 | 실리콘 부재 및 실리콘 부재의 제조 방법 |
KR20170085960A (ko) * | 2016-01-15 | 2017-07-25 | 도쿄엘렉트론가부시키가이샤 | 적재대의 표면 처리 방법, 적재대 및 플라즈마 처리 장치 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2004090967A1 (ja) | 2006-07-06 |
EP1615261B8 (en) | 2019-09-18 |
EP1615261B1 (en) | 2019-05-08 |
EP1615261A1 (en) | 2006-01-11 |
CN100517612C (zh) | 2009-07-22 |
EP1615261A4 (en) | 2010-05-19 |
KR100758965B1 (ko) | 2007-09-14 |
US7331780B2 (en) | 2008-02-19 |
US20060078839A1 (en) | 2006-04-13 |
TWI242831B (en) | 2005-11-01 |
TW200426969A (en) | 2004-12-01 |
WO2004090967A1 (ja) | 2004-10-21 |
CN1771588A (zh) | 2006-05-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100758965B1 (ko) | 반도체 웨이퍼용 열처리 치구 | |
JP4534619B2 (ja) | 半導体シリコン基板用熱処理治具 | |
KR100816180B1 (ko) | 반도체 기판용 열처리 치구 및 반도체 기판의 열처리 방법 | |
US7163393B2 (en) | Heat treatment jig for semiconductor silicon substrate | |
US7256375B2 (en) | Susceptor plate for high temperature heat treatment | |
KR101347696B1 (ko) | 종형 열처리용 보트 및 이것을 이용한 반도체 웨이퍼의 열처리 방법 | |
TWI471970B (zh) | A wafer-supporting jig and a method for manufacturing a crystal tube for a vertical type heat treatment and a wafer support | |
US8003918B2 (en) | Vertical heat treatment boat and heat treatment method for semiconductor wafer | |
KR100607890B1 (ko) | 막두께 측정용 모니터 웨이퍼 | |
KR20010062144A (ko) | 열처리용 기판 보유 지지구, 기판 열처리 장치 및 기판의열처리 방법 | |
KR100841196B1 (ko) | 반도체 실리콘 기판용 열처리 지그 | |
JP3909720B2 (ja) | 半導体熱処理用ガラス状カーボン製ダミーウエハ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
G170 | Publication of correction | ||
FPAY | Annual fee payment |
Payment date: 20120831 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130830 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140901 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150828 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160902 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170901 Year of fee payment: 11 |