JP5745394B2 - 基板支持体、プラズマ反応装置、および、サセプターを形成する方法 - Google Patents
基板支持体、プラズマ反応装置、および、サセプターを形成する方法 Download PDFInfo
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- JP5745394B2 JP5745394B2 JP2011500934A JP2011500934A JP5745394B2 JP 5745394 B2 JP5745394 B2 JP 5745394B2 JP 2011500934 A JP2011500934 A JP 2011500934A JP 2011500934 A JP2011500934 A JP 2011500934A JP 5745394 B2 JP5745394 B2 JP 5745394B2
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- 239000000758 substrate Substances 0.000 title claims description 133
- 238000000034 method Methods 0.000 title claims description 52
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 8
- 238000005096 rolling process Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 26
- 239000000463 material Substances 0.000 description 16
- 230000036961 partial effect Effects 0.000 description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 230000003014 reinforcing effect Effects 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009881 electrostatic interaction Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910000755 6061-T6 aluminium alloy Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (17)
- プラズマ反応装置内で使用する基板支持体であって:
前記プラズマ反応装置の電極となるように構成される導電性本体であって、前記導電性本体は、大面積基板を支持し、そして熱エネルギーを前記大面積基板に供給するように構成される上部表面を有し、前記上部表面はアレイ状のロール成形凹部群を有する、導電性本体と、
前記ロール成形凹部群が形成されるときに、前記導電性本体にすでに埋め込まれているヒータと、を備える基板支持体。 - 前記上部表面は、凹凸が付けられており、前記上部表面とその上に配置される前記大面積基板との間に空間を形成するように構成されている、請求項1に記載の基板支持体。
- 前記上部表面は、その上に配置される前記大面積基板と部分的に接触するように、非平坦である、請求項1に記載の基板支持体。
- 前記ロール成形凹部群は格子状パターンに配列される、請求項1に記載の基板支持体。
- 前記ロール成形凹部群は入れ子状パターンに配列される、請求項1に記載の基板支持体。
- 前記ロール成形凹部群は、10ミル〜20ミル(0.254〜0.508ミリメートル)の範囲の深さを有する、請求項1に記載の基板支持体。
- プロセス容積部を有するチャンバ本体と;
前記プロセス容積部内に配置され、かつプロセスガス流を前記容積部内に誘導するように構成されるシャワーヘッドと;
前記プロセス容積部内に、かつ前記シャワーヘッドの下方に配置される、基板支持体のアルミニウム本体であって、該アルミニウム本体が、格子状パターンに配列されるロール成形凹部群を含む上部表面を有する、前記アルミニウム本体と;
前記アルミニウム本体内に埋め込まれたヒータであって、当該ヒータが前記アルミニウム本体に埋め込まれているときに、前記アルミニウム本体の上部表面に前記ロール成形凹部群が形成される、ヒータと、を備える、プラズマ反応装置。 - 前記ロール成形凹部群は、10ミル〜20ミル(0.254〜0.508ミリメートル)の範囲の深さを有する、請求項7に記載のプラズマ反応装置。
- 更に:
前記シャワーヘッドに接続されるRF電源を備える、請求項7に記載のプラズマ反応装置。 - サセプターを形成する方法であって、前記方法は:
少なくとも1つの埋め込み加熱素子を有するアルミニウム本体を設ける工程であって、該アルミニウム本体が、少なくとも0.25平方メートルの平面視面積を有する上部表面を有する、前記設ける工程と;
格子状パターンを前記上部表面に食い込むようにロール成形する工程と、を含む、方法。 - 格子状パターンをロール成形する前記工程は更に:
正方形切頂ピラミッド形状を有する凹部群を形成する工程を含む、請求項10に記載の方法。 - 格子状パターンをロール成形する前記工程は更に:
切頂円錐形、円錐形、ピラミッド形、立方形、または半円形のうちの少なくとも1つを有する凹部群を形成する工程を含む、請求項10に記載の方法。 - 格子状パターンをロール成形する前記工程は更に:
0.016インチ(0.406ミリメートル)〜0.48インチ(1.219センチメートル)の範囲の幅を有する凹部群を形成する工程を含む、請求項10に記載の方法。 - 格子状パターンをロール成形する前記工程は更に:
前記凹部の幅の2倍である中心間ピッチを有する凹部群を形成する工程を含む、請求項10に記載の方法。 - 格子状パターンをロール成形する前記工程は更に:
0.016インチ(0.406ミリメートル)〜0.48インチ(1.219センチメートル)の範囲の距離だけ分離された凹部群を形成する工程を含む、請求項10に記載の方法。 - 格子状パターンをロール成形する前記工程は更に:
凹部を、10ミル〜20ミル(0.254ミリメートル〜0.508ミリメートル)の範囲の深さに形成する工程を含み、前記凹部の下側側壁及び底部は、90度超の角度で交差する、請求項10に記載の方法。 - 格子状パターンをロール成形する前記工程は更に:
凹部群を、10ミル〜20ミル(0.254ミリメートル〜0.508ミリメートル)の範囲の深さに形成する工程を含み、前記凹部の底部は、全体を円弧形状としている、請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US3805008P | 2008-03-20 | 2008-03-20 | |
US61/038,050 | 2008-03-20 | ||
PCT/US2009/037557 WO2009117514A1 (en) | 2008-03-20 | 2009-03-18 | Susceptor with roll-formed surface and method for making same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011515854A JP2011515854A (ja) | 2011-05-19 |
JP2011515854A5 JP2011515854A5 (ja) | 2012-05-10 |
JP5745394B2 true JP5745394B2 (ja) | 2015-07-08 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011500934A Active JP5745394B2 (ja) | 2008-03-20 | 2009-03-18 | 基板支持体、プラズマ反応装置、および、サセプターを形成する方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9243328B2 (ja) |
JP (1) | JP5745394B2 (ja) |
KR (1) | KR101588566B1 (ja) |
CN (1) | CN101978473B (ja) |
TW (1) | TWI527929B (ja) |
WO (1) | WO2009117514A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
GB201709446D0 (en) * | 2017-06-14 | 2017-07-26 | Semblant Ltd | Plasma processing apparatus |
CN109881184B (zh) * | 2019-03-29 | 2022-03-25 | 拓荆科技股份有限公司 | 具有静电力抑制的基板承载装置 |
CN112387798B (zh) * | 2019-08-13 | 2024-05-14 | 青岛海尔多媒体有限公司 | 用于制作电子设备外壳的方法及*** |
KR20210089079A (ko) | 2020-01-06 | 2021-07-15 | 에이에스엠 아이피 홀딩 비.브이. | 채널형 리프트 핀 |
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KR100203780B1 (ko) * | 1996-09-23 | 1999-06-15 | 윤종용 | 반도체 웨이퍼 열처리 장치 |
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JP2002113536A (ja) * | 2000-10-04 | 2002-04-16 | Toyota Motor Corp | 成形素材の成形性向上方法およびその装置 |
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-
2009
- 2009-03-18 CN CN200980109686.5A patent/CN101978473B/zh active Active
- 2009-03-18 WO PCT/US2009/037557 patent/WO2009117514A1/en active Application Filing
- 2009-03-18 KR KR1020107023428A patent/KR101588566B1/ko active IP Right Grant
- 2009-03-18 JP JP2011500934A patent/JP5745394B2/ja active Active
- 2009-03-19 US US12/407,766 patent/US9243328B2/en not_active Expired - Fee Related
- 2009-03-20 TW TW098109276A patent/TWI527929B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
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CN101978473B (zh) | 2015-11-25 |
US9243328B2 (en) | 2016-01-26 |
JP2011515854A (ja) | 2011-05-19 |
KR101588566B1 (ko) | 2016-01-26 |
TWI527929B (zh) | 2016-04-01 |
WO2009117514A1 (en) | 2009-09-24 |
CN101978473A (zh) | 2011-02-16 |
TW200951244A (en) | 2009-12-16 |
KR20100126533A (ko) | 2010-12-01 |
US20090238734A1 (en) | 2009-09-24 |
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