KR20030038796A - 반도체 부품을 제조하는 방법 및 그 반도체 부품 - Google Patents
반도체 부품을 제조하는 방법 및 그 반도체 부품 Download PDFInfo
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- KR20030038796A KR20030038796A KR10-2003-7004848A KR20037004848A KR20030038796A KR 20030038796 A KR20030038796 A KR 20030038796A KR 20037004848 A KR20037004848 A KR 20037004848A KR 20030038796 A KR20030038796 A KR 20030038796A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000003990 capacitor Substances 0.000 claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims description 38
- 239000002184 metal Substances 0.000 claims description 38
- 238000000151 deposition Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 12
- 238000000059 patterning Methods 0.000 claims description 10
- 239000010410 layer Substances 0.000 description 297
- 238000000034 method Methods 0.000 description 45
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 239000002131 composite material Substances 0.000 description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 10
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- -1 gallium arsenide compound Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31616—Deposition of Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (5)
- 반도체 부품을 제조하는 방법으로서,알루미늄으로 구성된 제 1 유전층을 기판위에 형성하는 단계와,실질적으로 알루미늄이 없는 제 2 유전층을 상기 제 1 유전층위에 형성하는 단계와,제 1 전기 도전층을 상기 제 2 유전층위에 형성하는 단계와,상기 제 1 전기 도전층을 에칭하는 단계와,상기 제 1 전기 도전층을 형성한 후에, 상기 제 1 유전층의 적어도 일부분을 노출하도록 상기 제 2 유전층을 에칭하는 단계를 포함하는, 반도체 부품 제조 방법.
- 반도체 부품을 제조하는 방법으로서,제 1 커패시터 전극을 기판위에 형성하는 단계와,알루미늄으로 구성된 커패시터 유전층을 상기 제 1 커패시터 전극위에 형성하는 단계와,제 2 커패시터 전극을 상기 커패시터 유전층위에 형성하는 단계를 포함하는, 반도체 부품 제조 방법.
- 반도체 부품을 제조하는 방법으로서,반도체 기판을 제공하는 단계와,상기 반도체 기판위에 제 1 유전층을 증착하는 단계와,상기 제 1 유전층을 패터닝하는 단계와,상기 제 1 유전층을 패터닝한 후에, 상기 제 1 유전층위에 제 1 금속층을 증착하는 단계와,상기 제 1 금속층위에 제 2 금속층을 증착하는 단계와,상기 제 2 금속층을 증착한 후에, 상기 제 1 및 제 2 금속층들을 패터닝하는 단계와,상기 제 1 및 제 2 금속층들을 패터닝한 후에, 제 2 유전층을 상기 제 2 금속층위에 증착하는 단계와,제 3 유전층을 상기 제 2 유전층위에 증착하는 단계와,제 4 유전층을 상기 제 3 유전층위에 증착하는 단계와,제 3 금속층을 상기 제 4 유전층위에 증착하는 단계와,제 4 금속층을 상기 제 3 금속층위에 증착하는 단계와,상기 제 4 금속층을 증착한 후에, 상기 제 3 및 제 4 금속층들을 패터닝하는 단계와,상기 제 4 금속층을 패터닝한 후에, 상기 제 4 유전층을 패터닝하는 단계를 포함하는, 반도체 부품 제조 방법.
- 반도체 부품으로서,기판과,상기 기판위의 제 1 커패시터 전극과,상기 제 1 커패시터 전극위의 알루미늄으로 구성된 커패시터 유전층과,상기 커패시터 유전층위의 제 2 커패시터 전극을 포함하는, 반도체 부품.
- 반도체 부품으로서,반도체 기판과,상기 반도체 기판위의 제 1 유전층과,상기 제 1 유전층위의 제 1 금속층과,상기 제 1 금속층위의 실질적으로 알루미늄 없이 구성된 제 2 유전층과,상기 제 2 유전층위의 알루미늄으로 구성된 제 3 유전층과,상기 제 3 유전층위의 실질적으로 알루미늄 없이 구성된 제 4 유전층과,상기 제 4 유전층위의 제 2 금속층을 포함하는, 반도체 부품.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/679,861 US6465297B1 (en) | 2000-10-05 | 2000-10-05 | Method of manufacturing a semiconductor component having a capacitor |
US09/679,861 | 2000-10-05 | ||
PCT/US2001/031035 WO2002029865A2 (en) | 2000-10-05 | 2001-10-04 | Method of manufacturing a semiconductor component and semiconductor component thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030038796A true KR20030038796A (ko) | 2003-05-16 |
KR100890716B1 KR100890716B1 (ko) | 2009-03-27 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020037004848A KR100890716B1 (ko) | 2000-10-05 | 2001-10-04 | 반도체 부품을 제조하는 방법 및 그 반도체 부품 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6465297B1 (ko) |
JP (1) | JP4216588B2 (ko) |
KR (1) | KR100890716B1 (ko) |
CN (1) | CN1251302C (ko) |
AU (1) | AU2002213012A1 (ko) |
WO (1) | WO2002029865A2 (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7622322B2 (en) * | 2001-03-23 | 2009-11-24 | Cornell Research Foundation, Inc. | Method of forming an AlN coated heterojunction field effect transistor |
US6693017B1 (en) * | 2003-04-04 | 2004-02-17 | Infineon Technologies Ag | MIMcap top plate pull-back |
US6847273B2 (en) * | 2003-04-25 | 2005-01-25 | Cyntec Co., Ltd. | Miniaturized multi-layer coplanar wave guide low pass filter |
KR100549951B1 (ko) * | 2004-01-09 | 2006-02-07 | 삼성전자주식회사 | 반도체 메모리에서의 식각정지막을 이용한 커패시터형성방법 |
WO2008010028A1 (en) * | 2006-06-15 | 2008-01-24 | Freescale Semiconductor, Inc. | Mim capacitor integration |
KR100968800B1 (ko) * | 2006-07-12 | 2010-07-08 | 가부시끼가이샤 도시바 | 고주파용 반도체 장치 |
CN102148186B (zh) * | 2010-02-09 | 2013-05-01 | 中芯国际集成电路制造(上海)有限公司 | 一种制作半导体器件的方法 |
CN102148185B (zh) * | 2010-02-09 | 2013-05-01 | 中芯国际集成电路制造(上海)有限公司 | 形成互连结构的方法 |
CN102148188B (zh) * | 2010-02-09 | 2016-02-03 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法 |
US8962443B2 (en) * | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
CN106298655A (zh) * | 2015-05-11 | 2017-01-04 | 北大方正集团有限公司 | 金属氧化物功率器件的制备方法及功率器件 |
US10658455B2 (en) | 2017-09-28 | 2020-05-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal insulator metal capacitor structure having high capacitance |
US10707180B2 (en) * | 2018-04-23 | 2020-07-07 | Nxp Usa, Inc. | Impedance matching circuit for RF devices and method therefor |
JP7389429B2 (ja) * | 2019-10-21 | 2023-11-30 | 株式会社テクノ菱和 | プラズマ殺菌水生成装置 |
US20220208755A1 (en) * | 2020-12-30 | 2022-06-30 | Texas Instruments Incorporated | Fring capacitor, integrated circuit and manufacturing process for the fringe capacitor |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1920684A1 (de) * | 1969-04-23 | 1970-11-05 | Siemens Ag | Verfahren zum Herstellen von Aluminium-Aluminiumoxid-Metall-Kondensatoren in integrierten Schaltungen |
JPS5745968A (en) * | 1980-08-29 | 1982-03-16 | Ibm | Capacitor with double dielectric unit |
JPS6441262A (en) * | 1987-08-07 | 1989-02-13 | Hitachi Ltd | Memory cell |
JPH0354828A (ja) * | 1989-07-24 | 1991-03-08 | Oki Electric Ind Co Ltd | 半導体装置の複合導電層、複合導電層を用いたキャパシタおよび複合導電層の穴開け方法 |
JP3120867B2 (ja) * | 1990-05-31 | 2000-12-25 | キヤノン株式会社 | 静電容量素子を含む半導体装置およびその製造方法 |
JPH04250626A (ja) * | 1991-01-28 | 1992-09-07 | Matsushita Electric Ind Co Ltd | 多層配線装置 |
JPH04294575A (ja) * | 1991-03-23 | 1992-10-19 | Nec Eng Ltd | 高周波半導体集積回路 |
US5240871A (en) * | 1991-09-06 | 1993-08-31 | Micron Technology, Inc. | Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor |
JP3180404B2 (ja) * | 1992-01-10 | 2001-06-25 | ソニー株式会社 | 容量素子の形成方法 |
US5674771A (en) * | 1992-04-20 | 1997-10-07 | Nippon Telegraph And Telephone Corporation | Capacitor and method of manufacturing the same |
JPH05304251A (ja) * | 1992-04-27 | 1993-11-16 | Fujitsu Ltd | 半導体装置 |
US5471364A (en) * | 1993-03-31 | 1995-11-28 | Texas Instruments Incorporated | Electrode interface for high-dielectric-constant materials |
JP2842770B2 (ja) * | 1993-09-29 | 1999-01-06 | 日鉄セミコンダクター株式会社 | 半導体集積回路およびその製造方法 |
US5652176A (en) | 1995-02-24 | 1997-07-29 | Motorola, Inc. | Method for providing trench isolation and borderless contact |
US5525542A (en) | 1995-02-24 | 1996-06-11 | Motorola, Inc. | Method for making a semiconductor device having anti-reflective coating |
US5534462A (en) | 1995-02-24 | 1996-07-09 | Motorola, Inc. | Method for forming a plug and semiconductor device having the same |
JP2828135B2 (ja) * | 1995-10-05 | 1998-11-25 | 日本電気株式会社 | Mimキャパシタとその製造方法 |
JPH09127551A (ja) * | 1995-10-31 | 1997-05-16 | Sharp Corp | 半導体装置およびアクティブマトリクス基板 |
JPH09232517A (ja) * | 1996-02-21 | 1997-09-05 | Sanyo Electric Co Ltd | 誘電体素子及び誘電体素子の製造方法 |
JPH1022457A (ja) | 1996-07-03 | 1998-01-23 | Mitsubishi Electric Corp | 容量装置及び半導体装置並びにそれらの製造方法 |
JP3731277B2 (ja) * | 1997-03-04 | 2006-01-05 | ソニー株式会社 | 半導体集積回路装置 |
KR100269306B1 (ko) * | 1997-07-31 | 2000-10-16 | 윤종용 | 저온처리로안정화되는금속산화막으로구성된완충막을구비하는집적회로장치및그제조방법 |
US6184074B1 (en) * | 1997-12-17 | 2001-02-06 | Texas Instruments Incorporated | Method of fabrication a self-aligned polysilicon/diffusion barrier/oxygen stable sidewall bottom electrode structure for high-K DRAMS |
KR100275727B1 (ko) * | 1998-01-06 | 2001-01-15 | 윤종용 | 반도체 장치의 커패시터 형성방법 |
KR19990080413A (ko) * | 1998-04-16 | 1999-11-05 | 윤종용 | 배리어층 측벽에 산소 차단 스페이서가 형성된고유전율 커패시터 및 그 제조방법 |
KR20000001619A (ko) * | 1998-06-12 | 2000-01-15 | 윤종용 | 굴곡형 컨테이너 형상의 하부전극을 갖는 반도체장치의 커패시터 및 그 제조방법 |
JP2000003991A (ja) * | 1998-06-15 | 2000-01-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR20000007467A (ko) * | 1998-07-03 | 2000-02-07 | 윤종용 | 반도체장치의 커패시터 제조방법 |
KR100269332B1 (ko) * | 1998-07-07 | 2000-10-16 | 윤종용 | 반도체장치의 커패시터 및 그 제조방법 |
JP2000031387A (ja) * | 1998-07-14 | 2000-01-28 | Fuji Electric Co Ltd | 誘電体薄膜コンデンサの製造方法 |
KR100324591B1 (ko) * | 1998-12-24 | 2002-04-17 | 박종섭 | 티타늄 알루미늄 질소 합금막을 상부전극의 확산방지막으로서 이용하는 캐패시터 제조 방법 |
KR100281904B1 (ko) * | 1999-01-18 | 2001-02-15 | 윤종용 | 전극의 경사가 개선된 커패시터 형성방법 |
KR100280288B1 (ko) * | 1999-02-04 | 2001-01-15 | 윤종용 | 반도체 집적회로의 커패시터 제조방법 |
KR100289739B1 (ko) * | 1999-04-21 | 2001-05-15 | 윤종용 | 전기 도금 방법을 이용한 샐프얼라인 스택 커패시터의 제조방법 |
US6329234B1 (en) * | 2000-07-24 | 2001-12-11 | Taiwan Semiconductor Manufactuirng Company | Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow |
-
2000
- 2000-10-05 US US09/679,861 patent/US6465297B1/en not_active Expired - Lifetime
-
2001
- 2001-10-04 KR KR1020037004848A patent/KR100890716B1/ko active IP Right Grant
- 2001-10-04 WO PCT/US2001/031035 patent/WO2002029865A2/en active Application Filing
- 2001-10-04 AU AU2002213012A patent/AU2002213012A1/en not_active Abandoned
- 2001-10-04 CN CNB018168876A patent/CN1251302C/zh not_active Expired - Lifetime
- 2001-10-04 JP JP2002533350A patent/JP4216588B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
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JP4216588B2 (ja) | 2009-01-28 |
JP2004533106A (ja) | 2004-10-28 |
US6465297B1 (en) | 2002-10-15 |
WO2002029865A3 (en) | 2003-04-10 |
CN1251302C (zh) | 2006-04-12 |
KR100890716B1 (ko) | 2009-03-27 |
AU2002213012A1 (en) | 2002-04-15 |
CN1468443A (zh) | 2004-01-14 |
WO2002029865A2 (en) | 2002-04-11 |
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