KR100898211B1 - 반도체 집적회로 - Google Patents
반도체 집적회로 Download PDFInfo
- Publication number
- KR100898211B1 KR100898211B1 KR1020020068753A KR20020068753A KR100898211B1 KR 100898211 B1 KR100898211 B1 KR 100898211B1 KR 1020020068753 A KR1020020068753 A KR 1020020068753A KR 20020068753 A KR20020068753 A KR 20020068753A KR 100898211 B1 KR100898211 B1 KR 100898211B1
- Authority
- KR
- South Korea
- Prior art keywords
- constant current
- terminal
- branched
- gate
- terminals
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000010586 diagram Methods 0.000 description 18
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (3)
- 반도체 집적회로에 있어서,다수로 분기한 드레인 단자와, 다수로 분기한 게이트 단자와, 다수로 분기한 소스 단자를 구비하고, 상기 게이트 단자 및 상기 소스 단자를 공통으로 하는 다수의 정전류 소자가 각각 평행하고 좌우대칭으로 배치된 정전류 회로를 갖고,상기 드레인 단자는 상기 게이트 단자 및 상기 소스 단자에 대응하여 각각 평행하게 짝수개 배치되어 있으며, 상기 드레인 단자는 좌우의 가장 외측에 위치하는 쌍에서부터 차례로 가장 내측의 이웃하는 위치에 배치된 쌍까지 각각 2개를 1조로 하여 접속되어 있는 것을 특징으로 하는 반도체 집적회로.
- 반도체 집적회로에 있어서,분기한 게이트 단자와, 상기 게이트 단자에 대응하도록 분기한 소스 단자와, 상기 게이트 단자 및 소스 단자를 공통으로 하고, 분기한 상기 게이트 단자와 상기 소스 단자에 대응하여 배치된 분기한 각각 2개의 드레인 단자를 갖는 N(2 ≤N)개의 정전류 소자로 구성되는 정전류 회로를 갖고,제n(1 ≤n ≤N)번째에 배치된 상기 정전류 소자의 상기 드레인 단자는, 다수의 드레인 단자가 배열된 양단으로부터 각각 제n번째의 위치에서 접속되어 있는 것을 특징으로 하는 반도체 집적회로.
- 반도체 집적회로에 있어서,분기한 게이트 단자와,상기 게이트 단자에 대응하도록 분기한 소스 단자와,상기 게이트 단자 및 소스 단자를 공통으로 하고, 분기한 상기 게이트 단자와 상기 소스 단자에 대응하여 배치된 분기한 각각이 M개의 드레인 단자를 갖는 N(2 ≤N)개의 정전류 소자를 갖고,제n(1 ≤n ≤N)번째에 배치된 상기 정전류 소자의 드레인 단자는,N개씩 묶어진 동일한 배열을 가지는 M개의 그룹 중에서, 각각 제n번째 위치에 배치되어 있는 것을 특징으로 하는 반도체 집적회로.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2001-00345241 | 2001-11-09 | ||
JP2001345241 | 2001-11-09 | ||
JP2002297691A JP4245124B2 (ja) | 2001-11-09 | 2002-10-10 | 半導体集積回路 |
JPJP-P-2002-00297691 | 2002-10-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030038492A KR20030038492A (ko) | 2003-05-16 |
KR100898211B1 true KR100898211B1 (ko) | 2009-05-18 |
Family
ID=26624454
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020020068753A KR100898211B1 (ko) | 2001-11-09 | 2002-11-07 | 반도체 집적회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6831336B2 (ko) |
JP (1) | JP4245124B2 (ko) |
KR (1) | KR100898211B1 (ko) |
CN (1) | CN100481450C (ko) |
TW (1) | TWI244752B (ko) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR870002591A (ko) * | 1985-08-16 | 1987-08-31 | 미다 가쓰시게 | 시리얼 데이터 기억 반도체 메모리 |
JPH0973331A (ja) * | 1995-06-30 | 1997-03-18 | Seiko Instr Inc | 半導体集積回路装置 |
US5828102A (en) * | 1996-08-27 | 1998-10-27 | National Semiconductor Corporation | Multiple finger polysilicon gate structure and method of making |
KR19990008196A (ko) * | 1995-05-04 | 1999-01-25 | 베라파이스트코른 | 전기도체용 연결단자 |
US5874764A (en) * | 1995-04-27 | 1999-02-23 | International Business Machines Corporation | Modular MOSFETS for high aspect ratio applications |
US5990504A (en) * | 1999-05-18 | 1999-11-23 | Kabushiki Kaisha Toshiba | Finger structured MOSFET |
US6002156A (en) * | 1997-09-16 | 1999-12-14 | Winbond Electronics Corp. | Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering |
-
2002
- 2002-10-10 JP JP2002297691A patent/JP4245124B2/ja not_active Expired - Fee Related
- 2002-11-04 US US10/287,072 patent/US6831336B2/en not_active Expired - Lifetime
- 2002-11-06 TW TW091132705A patent/TWI244752B/zh not_active IP Right Cessation
- 2002-11-07 KR KR1020020068753A patent/KR100898211B1/ko active IP Right Grant
- 2002-11-11 CN CNB021503877A patent/CN100481450C/zh not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR870002591A (ko) * | 1985-08-16 | 1987-08-31 | 미다 가쓰시게 | 시리얼 데이터 기억 반도체 메모리 |
US5874764A (en) * | 1995-04-27 | 1999-02-23 | International Business Machines Corporation | Modular MOSFETS for high aspect ratio applications |
KR19990008196A (ko) * | 1995-05-04 | 1999-01-25 | 베라파이스트코른 | 전기도체용 연결단자 |
JPH0973331A (ja) * | 1995-06-30 | 1997-03-18 | Seiko Instr Inc | 半導体集積回路装置 |
US5828102A (en) * | 1996-08-27 | 1998-10-27 | National Semiconductor Corporation | Multiple finger polysilicon gate structure and method of making |
US6002156A (en) * | 1997-09-16 | 1999-12-14 | Winbond Electronics Corp. | Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering |
US5990504A (en) * | 1999-05-18 | 1999-11-23 | Kabushiki Kaisha Toshiba | Finger structured MOSFET |
Non-Patent Citations (5)
Title |
---|
1019870002591 A |
1019990008196 A |
Cheon Soo Kim 외 "Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance" 2000 IEEE ELECTRON DEVICE LETTERS, Vol. 21, No. 12, 발표일 2000.12 * |
Cheon Soo Kim 외 "Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance" 2000 IEEE ELECTRON DEVICE LETTERS, Vol. 21, No. 12, 발표일 2000.12* |
Cheon Soo Kim 외 Gate layout and bonding pad structure of a RF n-MOSFET for low noise performance 2000 IEEE ELECTRON DEVICE LETTERS, Vol. 21, No. 12, (발표일 2000.12) * |
Also Published As
Publication number | Publication date |
---|---|
TWI244752B (en) | 2005-12-01 |
US6831336B2 (en) | 2004-12-14 |
JP2003209182A (ja) | 2003-07-25 |
JP4245124B2 (ja) | 2009-03-25 |
CN100481450C (zh) | 2009-04-22 |
US20030089955A1 (en) | 2003-05-15 |
CN1417860A (zh) | 2003-05-14 |
KR20030038492A (ko) | 2003-05-16 |
TW200300602A (en) | 2003-06-01 |
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