KR100789337B1 - 웨이퍼 형상 물품의 액체 처리 장치 - Google Patents
웨이퍼 형상 물품의 액체 처리 장치 Download PDFInfo
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- KR100789337B1 KR100789337B1 KR1020070095382A KR20070095382A KR100789337B1 KR 100789337 B1 KR100789337 B1 KR 100789337B1 KR 1020070095382 A KR1020070095382 A KR 1020070095382A KR 20070095382 A KR20070095382 A KR 20070095382A KR 100789337 B1 KR100789337 B1 KR 100789337B1
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- 238000000034 method Methods 0.000 claims description 9
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- 239000012530 fluid Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 149
- 230000007246 mechanism Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011010 flushing procedure Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000000080 wetting agent Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Coating Apparatus (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- ing And Chemical Polishing (AREA)
- Photographic Processing Devices Using Wet Methods (AREA)
- Chemically Coating (AREA)
Abstract
Description
Claims (15)
- 웨이퍼 형상 물품의 한정된 부분을 액체로 처리하기 위한 장치로서,웨이퍼 형상 물품을 보유하기 위한 보유 수단(3, 53);액체로 처리될 상기 한정된 부분의 영역에 대응하는 형상 및 크기를 가지는 마스크(2); 및상기 액체가 모세관 작용력에 의해 상기 마스크와 상기 웨이퍼 형상 물품의 한정된 영역 사이에 보유될 수 있도록 상기 마스크와 상기 웨이퍼 형상 물품을 소정의 좁은 간격으로 유지하는 스페이서 수단(3, 31, 41)을 포함하고,상기 마스크와 상기 보유 수단은 상기 마스크에 수직인 축선(A)을 중심으로 한 회전에 대해서도 서로에 대하여 움직이지 않는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 마스크(2)는 링의 형상을 가지는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 2 항에 있어서, 상기 링은 상기 웨이퍼 형상 물품의 외경보다 작은 내경과, 상기 웨이퍼 형상 물품의 외경과 적어도 같은 외경을 가지는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 스페이서 수단은 상기 마스크와 상기 웨이퍼 형상 물품을 0.05 ㎜ 내지 1 ㎜의 간격(a1)으로 유지하는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 스페이서 수단은, 상기 웨이퍼 형상 물품에 직접 접촉하고 또한 상기 마스크(2)에 직접적으로 또는 간접적으로 결합된 그립퍼(gripper) 부재(3, 53)로 이루어진 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 스페이서 수단은, 상기 마스크(2)에 직접적으로 또는 간접적으로 결합되고, 또한 상기 웨이퍼 형상 물품으로 향하여 있어 상기 웨이퍼 형상 물품을 가스 쿠션상에 유지시킬 수 있게 하는 가스 공급 수단(45, 46)으로 이루어진 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 마스크와 상기 웨이퍼 형상 물품 사이에 위치한 액체가 더 이상 모세관 작용력에 의해 유지되지 않도록 상기 마스크와 상기 웨이퍼 형상 물품 사이의 간격(a1)을 증가시킬 수 있는 간격 변경 수단(5, 44, 49)을 더 포함하는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 7 항에 있어서, 상기 간격 변경 수단은, 액체 처리 중에 또는 액체 처리 직후에 상기 마스크와 상기 웨이퍼 형상 물품 사이의 간격을 변경할 수 있도록 된 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 7 항에 있어서, 상기 스페이서 수단의 요소들이 상기 간격 변경 수단의 요소들을 겸하는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 웨이퍼 형상 물품의 둘레측에 접하고, 또한 상기 웨이퍼 형상 물품의 주 표면에 대해 수직으로 위치된 안내 부재(3, 53)를 구비하는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 10 항에 있어서, 상기 보유 수단은 안내 부재(53)와 가스 공급 수단(45, 46)으로 이루어진 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 9 항에 있어서, 상기 간격 변경 수단은, 상기 마스크(2)에 직접적으로 또는 간접적으로 결합되고, 또한 상기 웨이퍼 형상 물품의 주 표면으로 향하여 있어 상기 웨이퍼 형상 물품을 가스 쿠션상에 유지시킬 수 있게 하는 가스 공급 수단(44, 49)으로 이루어진 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 스페이서 수단과 상기 간격 변경 수단이 동일한 가스 공급 수단(44, 45, 46, 49)으로 이루어지고, 또한, 상기 가스 공급 수단을 적어 도 두 가지 상이한 작동 상태로 이행시켜, 상기 웨이퍼 형상 물품과 상기 마스크 사이의 두 가지 상이한 간격을 조절할 수 있게 하는 수단이 제공되어 있는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 보유 수단이 회전 가능한 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
- 제 1 항에 있어서, 상기 마스크로 향한 상기 웨이퍼 형상 물품의 표면으로 향하여 있는 액체 라인(28)을 더 포함하는 것을 특징으로 하는 웨이퍼 형상 물품의 액체 처리 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00123714A EP1202326B1 (de) | 2000-10-31 | 2000-10-31 | Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen |
EP00123714.8 | 2000-10-31 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010065596A Division KR100796709B1 (ko) | 2000-10-31 | 2001-10-24 | 웨이퍼 형상 물품의 액체 처리 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20070100210A KR20070100210A (ko) | 2007-10-10 |
KR100789337B1 true KR100789337B1 (ko) | 2007-12-28 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020010065596A KR100796709B1 (ko) | 2000-10-31 | 2001-10-24 | 웨이퍼 형상 물품의 액체 처리 장치 |
KR1020070095382A KR100789337B1 (ko) | 2000-10-31 | 2007-09-19 | 웨이퍼 형상 물품의 액체 처리 장치 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020010065596A KR100796709B1 (ko) | 2000-10-31 | 2001-10-24 | 웨이퍼 형상 물품의 액체 처리 장치 |
Country Status (8)
Country | Link |
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US (3) | US7172674B2 (ko) |
EP (3) | EP1372186B1 (ko) |
JP (2) | JP4911849B2 (ko) |
KR (2) | KR100796709B1 (ko) |
CN (1) | CN1175476C (ko) |
AT (2) | ATE417356T1 (ko) |
DE (2) | DE50015481D1 (ko) |
SG (1) | SG128415A1 (ko) |
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Also Published As
Publication number | Publication date |
---|---|
SG128415A1 (en) | 2007-01-30 |
EP1369904B1 (de) | 2009-01-21 |
DE50004935D1 (de) | 2004-02-05 |
JP4911849B2 (ja) | 2012-04-04 |
US20020050244A1 (en) | 2002-05-02 |
EP1202326B1 (de) | 2004-01-02 |
JP2012080113A (ja) | 2012-04-19 |
US7799695B2 (en) | 2010-09-21 |
ATE257277T1 (de) | 2004-01-15 |
EP1202326A1 (de) | 2002-05-02 |
KR100796709B1 (ko) | 2008-01-21 |
JP2002246364A (ja) | 2002-08-30 |
EP1369904A3 (de) | 2005-10-26 |
US7172674B2 (en) | 2007-02-06 |
CN1175476C (zh) | 2004-11-10 |
EP1369904A2 (de) | 2003-12-10 |
JP5396456B2 (ja) | 2014-01-22 |
CN1351368A (zh) | 2002-05-29 |
KR20020033527A (ko) | 2002-05-07 |
US7988818B2 (en) | 2011-08-02 |
KR20070100210A (ko) | 2007-10-10 |
ATE417356T1 (de) | 2008-12-15 |
DE50015481D1 (de) | 2009-01-22 |
EP1372186B1 (de) | 2008-12-10 |
EP1372186A2 (de) | 2003-12-17 |
US20070084561A1 (en) | 2007-04-19 |
EP1372186A3 (de) | 2005-10-26 |
US20050026448A1 (en) | 2005-02-03 |
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