JP2018046088A - 固体撮像装置及び電子機器 - Google Patents
固体撮像装置及び電子機器 Download PDFInfo
- Publication number
- JP2018046088A JP2018046088A JP2016178287A JP2016178287A JP2018046088A JP 2018046088 A JP2018046088 A JP 2018046088A JP 2016178287 A JP2016178287 A JP 2016178287A JP 2016178287 A JP2016178287 A JP 2016178287A JP 2018046088 A JP2018046088 A JP 2018046088A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- signal
- solid
- state imaging
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012546 transfer Methods 0.000 claims abstract description 79
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 238000009792 diffusion process Methods 0.000 claims abstract description 42
- 238000007667 floating Methods 0.000 claims abstract description 42
- 239000010410 layer Substances 0.000 claims description 66
- 238000003384 imaging method Methods 0.000 claims description 39
- 239000011229 interlayer Substances 0.000 claims description 15
- 230000003071 parasitic effect Effects 0.000 abstract description 18
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 description 21
- 239000003990 capacitor Substances 0.000 description 20
- 238000010586 diagram Methods 0.000 description 12
- 230000008878 coupling Effects 0.000 description 8
- 238000010168 coupling process Methods 0.000 description 8
- 238000005859 coupling reaction Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 230000002596 correlated effect Effects 0.000 description 7
- 238000005070 sampling Methods 0.000 description 7
- 230000002411 adverse Effects 0.000 description 6
- 230000000875 corresponding effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000001444 catalytic combustion detection Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14678—Contact-type imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/617—Noise processing, e.g. detecting, correcting, reducing or removing noise for reducing electromagnetic interference, e.g. clocking noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/701—Line sensors
- H04N25/7013—Line sensors using abutted sensors forming a long line
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
<電子機器>
以下においては、本発明の一実施形態に係る電子機器として、本発明の一実施形態に係る固体撮像装置(イメージセンサーチップ)を含むコンタクトイメージセンサー(CIS)モジュールを用いたCIS方式のスキャナー装置について説明する。
図3は、本発明の一実施形態に係る固体撮像装置であるイメージセンサーチップの構成例を示すブロック図である。図3に示すように、イメージセンサーチップ20は、画素部30と、読み出し回路部40と、制御回路部50とを含み、さらに、キャパシター61〜64を含んでも良い。
図4は、1画素分の画素部及び読み出し回路部の等価回路を示す回路図である。図3に示す画素部30の1つの画素には、光電変換機能を有する受光素子として、例えば、フォトダイオードPDが配置されている。フォトダイオードPDは、入射した光の強度に応じた信号電荷を蓄積する。
図5は、画素部及び読み出し回路部の単位ブロックを示す回路図である。図5に示すように、主走査方向Aにおいて連続する4つのフォトダイオードPDa〜PDdと、それらのフォトダイオードPDa〜PDdから転送される信号電荷を信号電圧に変換して画素情報を読み出す読み出し回路部とが、1つの単位ブロック40Aを構成している。例えば、1つのイメージセンサーチップ20に設けられる単位ブロック40Aの数は、216個である。
図8は、図5に示す単位ブロックのレイアウト例を示す平面図である。なお、図8においては、上層の配線を通してゲート電極及び下層の配線の一部も示されている。図8に示す画素領域において、図5に示す2つの前段転送ゲートTG1a及びTG1bは、半導体層上にゲート絶縁膜を介して配置された共通ゲート電極151Aを有しており、2つの前段転送ゲートTG1c及びTG1dは、半導体層上にゲート絶縁膜を介して配置された共通ゲート電極151Bを有している。共通ゲート電極151A及び151Bは、制御信号配線171に接続されて、制御信号Tx1が供給される。
図8及び図9に示すレイアウトにおいて、浮遊拡散領域FDとバッファートランジスターQN1のゲート電極153とを電気的に接続する信号配線と、半導体層又は電源配線等の他の配線との間の寄生容量が大きいと、信号電荷を信号電圧に変換する際の変換ゲインが低下して、固体撮像装置の感度が低下してしまう。そこで、本実施形態に係る固体撮像装置は、最下層よりも上層の第N層の配線層に配置されて浮遊拡散領域FDとバッファートランジスターQN1とを電気的に接続する信号配線191を備えている。ここで、Nは2以上の整数である。
図8に示すように、後段転送ゲートTG2aのゲート電極152aに接続されたゲート配線152a1が信号配線191の近くに配置されている場合には、信号配線191とゲート配線152a1との容量結合が強いと、ゲート配線152a1の電位変化が信号配線191の電位に悪影響を与えてしまう。
Claims (7)
- 受光素子、転送ゲート、浮遊拡散領域、及び、バッファートランジスターを含む画素領域と、
第N層の配線層に配置されて(Nは2以上の整数)、前記浮遊拡散領域と前記バッファートランジスターとを電気的に接続する配線と、
を備える固体撮像装置。 - 第1層〜第N層の層間絶縁膜の開口内に平面視で重なるように配置されて、前記浮遊拡散領域と前記配線とを電気的に接続する第1群のコンタクトプラグと、
第1層〜第N層の層間絶縁膜の開口内に平面視で重なるように配置されて、前記バッファートランジスターと前記配線とを電気的に接続する第2群のコンタクトプラグと、
をさらに備える、請求項1記載の固体撮像装置。 - 前記配線が、前記画素領域に配置された複数の配線の内で最も細い幅を有する、請求項1又は2記載の固体撮像装置。
- 前記配線が、平面視で他の配線と交差していない、請求項1〜3のいずれか1項記載の固体撮像装置。
- 前記画素領域が設けられた半導体層の主面に平行な方向における前記配線と他の配線との間の距離が、前記半導体層の主面に垂直な方向における前記配線と前記半導体層との間の距離よりも大きい、請求項1〜4のいずれか1項記載の固体撮像装置。
- 平面視で前記配線と前記転送ゲートに接続された配線との間に配置されたガード配線をさらに備える、請求項1〜5のいずれか1項記載の固体撮像装置。
- 請求項1〜6のいずれか1項記載の固体撮像装置を備える電子機器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016178287A JP2018046088A (ja) | 2016-09-13 | 2016-09-13 | 固体撮像装置及び電子機器 |
CN201710805191.2A CN107819002A (zh) | 2016-09-13 | 2017-09-08 | 固体摄像装置和电子设备 |
US15/699,602 US20180076251A1 (en) | 2016-09-13 | 2017-09-08 | Solid-state image capturing device and electronic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016178287A JP2018046088A (ja) | 2016-09-13 | 2016-09-13 | 固体撮像装置及び電子機器 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018046088A true JP2018046088A (ja) | 2018-03-22 |
Family
ID=61560929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016178287A Pending JP2018046088A (ja) | 2016-09-13 | 2016-09-13 | 固体撮像装置及び電子機器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20180076251A1 (ja) |
JP (1) | JP2018046088A (ja) |
CN (1) | CN107819002A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102513483B1 (ko) * | 2017-11-30 | 2023-03-24 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006147816A (ja) * | 2004-11-19 | 2006-06-08 | Sony Corp | 物理量分布検知装置および物理情報取得装置 |
JP2006148513A (ja) * | 2004-11-19 | 2006-06-08 | Canon Inc | 固体撮像装置及び同固体撮像装置を用いたカメラ |
WO2013098952A1 (ja) * | 2011-12-27 | 2013-07-04 | キヤノン株式会社 | 撮像装置 |
JP2015185823A (ja) * | 2014-03-26 | 2015-10-22 | ソニー株式会社 | 固体撮像素子、及び、撮像装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100775058B1 (ko) * | 2005-09-29 | 2007-11-08 | 삼성전자주식회사 | 픽셀 및 이를 이용한 이미지 센서, 그리고 상기 이미지센서를 포함하는 이미지 처리 시스템 |
JP5019934B2 (ja) * | 2007-04-11 | 2012-09-05 | シャープ株式会社 | 固体撮像素子の製造方法 |
JP5029624B2 (ja) * | 2009-01-15 | 2012-09-19 | ソニー株式会社 | 固体撮像装置及び電子機器 |
US20110267505A1 (en) * | 2010-04-29 | 2011-11-03 | Bart Dierickx | Pixel with reduced 1/f noise |
JP5853389B2 (ja) * | 2011-03-28 | 2016-02-09 | ソニー株式会社 | 半導体装置及び半導体装置の製造方法。 |
JP2013197333A (ja) * | 2012-03-21 | 2013-09-30 | Sony Corp | 固体撮像装置、カメラ、および電子機器 |
JP6106382B2 (ja) * | 2012-08-24 | 2017-03-29 | シャープ株式会社 | 固体撮像素子およびその製造方法、電子情報機器 |
KR102268712B1 (ko) * | 2014-06-23 | 2021-06-28 | 삼성전자주식회사 | 자동 초점 이미지 센서 및 이를 포함하는 디지털 영상 처리 장치 |
JP6362694B2 (ja) * | 2014-07-09 | 2018-07-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR102268707B1 (ko) * | 2014-07-28 | 2021-06-28 | 삼성전자주식회사 | 이미지 센서 |
-
2016
- 2016-09-13 JP JP2016178287A patent/JP2018046088A/ja active Pending
-
2017
- 2017-09-08 US US15/699,602 patent/US20180076251A1/en not_active Abandoned
- 2017-09-08 CN CN201710805191.2A patent/CN107819002A/zh not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006147816A (ja) * | 2004-11-19 | 2006-06-08 | Sony Corp | 物理量分布検知装置および物理情報取得装置 |
JP2006148513A (ja) * | 2004-11-19 | 2006-06-08 | Canon Inc | 固体撮像装置及び同固体撮像装置を用いたカメラ |
WO2013098952A1 (ja) * | 2011-12-27 | 2013-07-04 | キヤノン株式会社 | 撮像装置 |
JP2015185823A (ja) * | 2014-03-26 | 2015-10-22 | ソニー株式会社 | 固体撮像素子、及び、撮像装置 |
Also Published As
Publication number | Publication date |
---|---|
CN107819002A (zh) | 2018-03-20 |
US20180076251A1 (en) | 2018-03-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107425025B (zh) | 固态成像装置和电子设备 | |
US9124833B2 (en) | Solid-state imaging apparatus | |
KR102383181B1 (ko) | 고체 촬상 소자, 고체 촬상 소자의 제조 방법, 및, 전자 기기 | |
US8541730B2 (en) | Solid-state imaging device, imaging apparatus, and method for manufacturing solid-state imaging device | |
US8139133B2 (en) | Photoelectric conversion device | |
US11050966B2 (en) | Solid-state imaging device, method for driving solid-state imaging device, and electronic apparatus | |
US9236406B2 (en) | Photoelectric conversion apparatus with gate control lines and wiring at same height | |
CN113658967A (zh) | 光检测设备 | |
JP2009295937A (ja) | 固体撮像装置、その駆動方法、及び電子機器 | |
KR20040064239A (ko) | 리셋 노이즈 억제 및 프로그램가능 비닝 능력을 갖춘aps 화소 | |
JP2013062789A (ja) | 固体撮像装置及び電子機器 | |
JP7354315B2 (ja) | 固体撮像素子及び電子機器 | |
JP2007142587A (ja) | 固体撮像装置 | |
JP2006135089A (ja) | 増幅型固体撮像装置 | |
CN105359274A (zh) | 成像元件 | |
JP2005167958A (ja) | 固体撮像装置、その駆動方法及びそれを用いたカメラ | |
JP2018050028A (ja) | 固体撮像装置及び電子機器 | |
US10347674B2 (en) | Solid-state image capturing device and electronic apparatus | |
JP2018046088A (ja) | 固体撮像装置及び電子機器 | |
KR20140015308A (ko) | 고체 촬상 소자의 제조 방법, 고체 촬상 소자, 촬상 장치 | |
JP6813971B2 (ja) | 光電変換装置及び撮像システム | |
JP2018067615A (ja) | 固体撮像装置及びその製造方法、並びに、電子機器 | |
US20060202235A1 (en) | Solid-state imaging apparatus in which a plurality of pixels each including a photoelectric converter and a signal scanning circuit are arranged two-dimensionally | |
JP5231179B2 (ja) | 撮像素子 | |
US20180076255A1 (en) | Solid-state image capturing device and electronic apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD05 | Notification of revocation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7425 Effective date: 20180910 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20190402 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190801 |
|
RD07 | Notification of extinguishment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7427 Effective date: 20200803 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20200826 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200901 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201020 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210330 |