KR100753785B1 - 반도체 디바이스 및 그 제조 방법 - Google Patents
반도체 디바이스 및 그 제조 방법 Download PDFInfo
- Publication number
- KR100753785B1 KR100753785B1 KR1020010012029A KR20010012029A KR100753785B1 KR 100753785 B1 KR100753785 B1 KR 100753785B1 KR 1020010012029 A KR1020010012029 A KR 1020010012029A KR 20010012029 A KR20010012029 A KR 20010012029A KR 100753785 B1 KR100753785 B1 KR 100753785B1
- Authority
- KR
- South Korea
- Prior art keywords
- film
- semiconductor film
- conductive film
- semiconductor
- forming
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims description 209
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 73
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 39
- 239000012535 impurity Substances 0.000 claims description 32
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 29
- 238000001312 dry etching Methods 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000009751 slip forming Methods 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 abstract description 21
- 239000003990 capacitor Substances 0.000 abstract description 20
- 238000003860 storage Methods 0.000 abstract description 13
- 239000010408 film Substances 0.000 description 331
- 239000010410 layer Substances 0.000 description 40
- 239000000463 material Substances 0.000 description 26
- 239000011159 matrix material Substances 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000005530 etching Methods 0.000 description 20
- 239000004020 conductor Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 16
- 230000008021 deposition Effects 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 12
- 239000002245 particle Substances 0.000 description 11
- 230000005611 electricity Effects 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000003068 static effect Effects 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000011651 chromium Substances 0.000 description 7
- 239000012495 reaction gas Substances 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004988 Nematic liquid crystal Substances 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PBZHKWVYRQRZQC-UHFFFAOYSA-N [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O Chemical compound [Si+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PBZHKWVYRQRZQC-UHFFFAOYSA-N 0.000 description 1
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67236—Apparatus for manufacturing or treating in a plurality of work-stations the substrates being processed being not semiconductor wafers, e.g. leadframes or chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/103—Materials and properties semiconductor a-Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/10—Materials and properties semiconductor
- G02F2202/105—Materials and properties semiconductor single crystal Si
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (69)
- 게이트 배선, 소스 배선, 및 화소 전극을 갖는 반도체 디바이스로서,절연 표면 상에 형성된 게이트 배선;상기 게이트 배선 상에 형성된 절연막;상기 절연막 상에 형성된 비정질 반도체막;상기 비정질 반도체막 상에 형성된 소스 영역 및 드레인 영역;상기 소스 영역 또는 상기 드레인 영역 상에 형성된 소스 배선 또는 전극; 및상기 전극 상에 형성된 화소 전극을 포함하고,리버스된(reversed) 상기 소스 영역 또는 상기 드레인 영역 중 하나의 끝면(end surface)은 상기 절연막의 끝면, 상기 비정질 반도체막의 끝면 및 상기 전극의 끝면에 대응하는, 반도체 디바이스.
- 게이트 배선, 소스 배선, 및 화소 전극을 갖는 반도체 디바이스로서,절연 표면 상에 형성된 게이트 배선;상기 게이트 배선 상에 형성된 절연막;상기 절연막 상에 형성된 비정질 반도체막;상기 비정질 반도체막 상에 형성된 소스 영역 및 드레인 영역;상기 소스 영역 또는 상기 드레인 영역 상에 형성된 소스 배선 또는 전극; 및상기 전극 상에 형성된 화소 전극을 포함하고,리버스된 상기 소스 영역 또는 상기 드레인 영역 중 하나의 끝면은 상기 절연막의 끝면, 상기 비정질 반도체막의 끝면 및 상기 전극의 끝면에 대응하며,리버스된 상기 소스 영역 또는 상기 드레인 영역 중 나머지 끝면은 상기 화소 전극의 끝면 및 상기 전극의 나머지 끝면에 대응하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 n형 도전성을 부여하는 불순물 원소를 포함하는 비정질 반도체막을 포함하는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 절연막, 상기 비정질 반도체막, 상기 소스 영역, 및 상기 드레인 영역은 상기 대기에 노출되지 않고 연속하여 형성되는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 절연막, 상기 비정질 반도체막, 상기 소스 영역, 또는 상기 드레인 영역은 스퍼터링 방법에 의해서 형성되는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 절연막, 상기 비정질 반도체막, 상기 소스 영역, 또는 상기 드레인 영역은 플라즈마 CVD 방법에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 게이트 배선은 Al, Ti, Mo, W, Ta, Nd 및 Cr로 구성되는 그룹으로부터 선택된 원소의 막, 상기 원소들의 합금 막, 또는 상기 원소들의 적층 막(lamination film)을 포함하는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 상기 절연막, 상기 비정질 반도체막 및 상기 전극과 동일한 마스크에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 상기 소스 배선과 동일한 마스크에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 소스 영역 및 상기 드레인 영역은 상기 소스 배선 및 상기 화소 전극과 동일한 마스크에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 비정질 반도체막에서, 상기 소스 영역 및 상기 드레인 영역과 접촉하는 영역에서의 상기 막 두께는 상기 소스 영역과 접촉하는 상기 영역과 상기 드레인 영역과 접촉하는 상기 영역 사이의 영역에서의 상기 막 두께보다 더 두껍게 형성되는 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체 디바이스는 상기 화소 전극이 투명 도전막을 포함하는 투과형 액정 디스플레이 디바이스인 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체 디바이스는 상기 화소 전극이 그 주성분으로서 Al 또는 Ag를 함유하는 막 또는 그들의 적층된 막을 포함하는 반사형 액정 디스플레이 디바이스인 것을 특징으로 하는, 반도체 디바이스.
- 제 1 항 또는 제 2 항에 있어서,상기 반도체 디바이스는 퍼스널 컴퓨터, 비디오 카메라, 휴대용 정보 단말기, 디지털 카메라, 디지털 비디오 디스크 플레이어, 또는 전자 오락기인 것을 특징으로 하는, 반도체 디바이스.
- 반도체 디바이스를 제조하는 방법에 있어서,제 1 마스크를 사용함으로써 게이트 배선 라인을 형성하는 단계;상기 게이트 배선 라인을 덮는 절연막을 형성하는 단계;상기 절연막 상에 제 1 비정질 반도체막을 형성하는 단계;상기 제 1 비정질 반도체막 상에 n형 도전성을 부여하기 위해 불순물 원소를 포함하는 제 2 비정질 반도체막을 형성하는 단계;상기 제 2 비정질 반도체막 상에 제 1 도전막을 형성하는 단계;제 2 마스크를 사용하여 상기 절연막, 상기 제 1 비정질 반도체막, 상기 제 2 비정질 반도체막, 및 상기 제 1 도전막을 선택적으로 제거함으로써 소스 배선 라인 및 전극을 형성하는 단계;상기 소스 배선 라인 및 상기 전극과 접촉하고 겹치는 제 2 도전막을 형성하는 단계; 및제 3 마스크를 사용하여 상기 제 1 비정질 반도체막, 상기 제 2 비정질 반도체막, 상기 제 1 도전막, 및 상기 제 2 도전막의 일부분을 선택적으로 제거함으로써 상기 제 2 비정질 반도체막을 포함하는 드레인 영역과 소스 영역, 및 상기 제 2 도전막으로 만들어지는 화소 전극을 형성하는 단계를 포함하는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항에 있어서,상기 절연막을 형성하는 단계 내지 상기 1 도전막을 형성하는 단계는 상기 대기에 노출되지 않고 연속하여 수행되는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항 또는 제 16 항에 있어서,상기 절연막은 스퍼터링 방법에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항 또는 제 16 항에 있어서,상기 제 1 비정질 반도체막은 스퍼터링 방법에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항 또는 제 16 항에 있어서,상기 제 2 비정질 반도체막은 스퍼터링 방법에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항 또는 제 16 항에 있어서,상기 절연막을 형성하는 단계 내지 상기 제 1 도전막을 형성하는 단계는 상기 동일 체임버(chamber) 내에서 연속하여 수행되는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항에 있어서,상기 절연막은 플라즈마 CVD 방법에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항 또는 제 21 항에 있어서,상기 제 1 비정질 반도체막은 플라즈마 CVD 방법에 의해 형성되는 것을 특징으로 하는, 반도체 디바이스 제조 방법.
- 제 15 항 또는 제 21 항에 있어서,상기 제 2 비정질 반도체막은 플라즈마 CVD 방법에 의해 형성되는 것을 특징으로 하는 반도체 디바이스 제조 방법.
- 제 15 항, 제 16 항 또는 제 21 항 중 어느 한 항에 있어서,상기 제 2 도전막은 투명 도전막인 것을 특징으로 하는 반도체 디바이스 제조 방법.
- 제 15 항, 제 16 항 또는 제 21 항 중 어느 한 항에 있어서,상기 제 2 도전막은 반사 특성들을 갖는 도전막인 것을 특징으로 하는 반도체 디바이스 제조 방법.
- 반도체 디바이스를 제조하는 방법으로서,기판 상에 게이트 전극을 형성하는 단계;상기 게이트 전극 상에 제 1 반도체막을 형성하는 단계로서, 절연막이 이들 사이에 개재된 상기 제 1 반도체 막을 형성하는 단계;상기 제 1 반도체막 상에 하나의 도전성을 부여하기 위하여 불순물 원소를 갖는 제 2 반도체막을 형성하는 단계;상기 제 2 반도체막 상에 제 1 도전막을 형성하는 단계;상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막을 패터닝하는 단계;상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막의 남아있는 적층(lamination)과 접촉하고 겹치는 제 2 도전막을 형성하는 단계; 및동일한 마스크를 사용함으로써 상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막, 및 상기 제 2 도전막의 일부분을 선택적으로 제거하는 단계를 포함하는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 제 1 및 제 2 반도체막은 각각 비정질의 실리콘을 포함하는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막은 대기에 노출되지 않고 연속하여 형성되는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막은 상기 동일한 체임버 내에서 연속하여 형성되는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 절연막은 스퍼터링 방법에 의해 형성되는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 절연막은 플라즈마 CVD 방법에 의해 형성되는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 제 2 반도체막은 n형 불순물을 가진, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 제 2 도전막은 투명 도전막인, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 제 2 도전막은 반사 특성들을 갖는 도전막인, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 제 1 및 제 2 도전막들은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되고, 상기 제 1 및 제 2 반도체막들은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 상기 부분은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 일부분은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 26 항에 있어서,상기 반도체 디바이스는 비디오 카메라, 디지털 카메라, 프로젝터, 헤드-장착 디스플레이(head-mounted display), 고글형 디스플레이, 자동차 항법 시스템, 카 스테레오, 개인용 컴퓨터, 휴대용 정보 단말기, 모바일 컴퓨터, 휴대전화, 전자책, 및 기록 매체를 사용하는 플레이어를 포함하는 그룹으로부터 선택되는 적어도 하나의 전자 기기들을 포함하는, 반도체 디바이스 제조 방법.
- 반도체 디바이스를 제조하는 방법으로서,제 1 마스크를 사용함으로써 게이트 배선 라인을 형성하는 단계;상기 게이트 배선 라인을 덮는 절연막을 형성하는 단계;상기 절연막 상에 제 1 반도체막을 형성하는 단계;상기 제 1 반도체막 상에 하나의 도전성을 부여하기 위해 불순물 원소를 포함하는 제 2 반도체막을 형성하는 단계;상기 제 2 반도체막 상에 제 1 도전막을 형성하는 단계;제 2 마스크를 사용하여 상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막을 패터닝하는 단계;적어도 남아있는 제 1 도전막 상에 제 2 도전막을 형성하는 단계; 및제 3 마스크를 사용하여 상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 일부분을 선택적으로 제거하는 단계를 포함하는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 제 1 및 제 2 반도체막은 각각 비정질 실리콘을 포함하는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막은 대기에 노출되지 않고 연속하여 형성되는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막은 상기 동일한 체임버 내에서 연속하여 형성되는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 절연막은 스퍼터링 방법에 의해 형성되는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 절연막은 플라즈마 CVD 방법에 의해 형성되는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 제 2 반도체막은 n형 불순물을 가진, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 제 2 도전막은 투명 도전막인, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 제 2 도전막은 반사 특성들을 갖는 도전막인, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 제 1 및 제 2 도전막들은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되고, 상기 제 1 및 제 2 반도체막들은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 상기 부분은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 상기 부분은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 39 항에 있어서,상기 반도체 디바이스는 비디오 카메라, 디지털 카메라, 프로젝터, 헤드-장착 디스플레이, 고글형 디스플레이, 자동차 항법 시스템, 카 스테레오, 개인용 컴퓨터, 휴대용 정보 단말기, 모바일 컴퓨터, 휴대전화, 전자책, 및 기록 매체를 사용하는 플레이어를 포함하는 그룹으로부터 선택되는 적어도 하나의 전자 기기들을 포함하는, 반도체 디바이스 제조 방법.
- 반도체 디바이스를 제조하는 방법으로서,제 1 마스크를 사용하여 게이트 전극을 형성하는 단계;상기 게이트 전극을 덮는 절연막을 형성하는 단계;상기 절연막 상에 제 1 반도체막을 형성하는 단계;상기 제 1 반도체막 상에 하나의 도전성을 부여하기 위해 불순물 원소를 포함하는 제 2 반도체막을 형성하는 단계;상기 제 2 반도체막 상에 제 1 도전막을 형성하는 단계;제 2 마스크를 사용하여 상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막을 패터닝하는 단계;적어도 남아있는 제 1 도전막 상에 제 2 도전막을 형성하는 단계; 및제 3 마스크를 사용함으로써 상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 일부분을 선택적으로 제거함으로써 상기 제 2 반도체막을 포함하는 소스 영역과 드레인 영역 및 상기 제 2 도전막을 포함하는 화소전극을 형성하는 단계를 포함하는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 제 1 및 제 2 반도체막은 각각 비정질 실리콘을 포함하는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막은 대기에 노출되지 않고 연속하여 형성되는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막은 상기 동일한 체임버 내에서 연속하여 형성되는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 절연막은 스퍼터링 방법에 의해 형성되는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 절연막은 플라즈마 CVD 방법에 의해 형성되는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 제 2 반도체막은 n형 불순물을 가진, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 제 2 도전막은 투명 도전막인, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 제 2 도전막은 반사 특성들을 갖는 도전막인, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 제 1 및 제 2 도전막들은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되고, 상기 제 1 및 제 2 반도체막들은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 상기 부분은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 상기 부분은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 52 항에 있어서,상기 반도체 디바이스는 비디오 카메라, 디지털 카메라, 프로젝터, 헤드-장착 디스플레이, 고글형 디스플레이, 자동차 항법 시스템, 카 스테레오, 개인용 컴퓨터, 휴대용 정보 단말기, 모바일 컴퓨터, 휴대전화, 전자책, 및 기록 매체를 사용하는 플레이어를 포함하는 그룹으로부터 선택되는 적어도 하나의 전자 기기들을 포함하는, 반도체 디바이스 제조 방법.
- 반도체 디바이스를 제조하는 방법으로서,제 1 마스크를 사용함으로써 기판 상에 게이트 배선 라인을 형성하는 단계;상기 게이트 배선 라인을 덮는 절연막을 형성하는 단계;상기 절연막 상에 제 1 반도체막을 형성하는 단계;상기 제 1 반도체막 상에 하나의 도전성을 부여하기 위해 불순물 원소를 포함하는 제 2 반도체막을 형성하는 단계;상기 제 2 반도체막 상에 제 1 도전막을 형성하는 단계;제 2 마스크를 사용하여 상기 절연막, 상기 제 1 반도체막, 상기 제 2 반도체막, 및 상기 제 1 도전막을 패터닝하는 단계;상기 기판을 덮는 제 2 도전막을 형성하는 단계; 및제 3 마스크를 사용함으로써 상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 일부분을 선택적으로 제거하는 단계로서, 상기 제 2 도전막을 포함하는 화소 전극, 상기 제 1 도전막을 포함하는 소스 및 드레인 전극들, 및 상기 제 2 도전막을 포함하는 입력 단자가 형성되는, 상기 선택적으로 제거하는 단계를 포함하는, 반도체 디바이스 제조 방법.
- 제 65 항에 있어서,상기 제 1 및 제 2 도전막들은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되고, 상기 제 1 및 제 2 반도체막들은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 65 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 상기 부분은 상기 제 3 마스크로 건식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 65 항에 있어서,상기 제 1 반도체막, 상기 제 2 반도체막, 상기 제 1 도전막 및 상기 제 2 도전막의 상기 부분은 상기 제 3 마스크로 습식 에칭을 함으로써 제거되는, 반도체 디바이스 제조 방법.
- 제 65 항에 있어서,상기 반도체 디바이스는 비디오 카메라, 디지털 카메라, 프로젝터, 헤드-장착 디스플레이, 고글형 디스플레이, 자동차 항법 시스템, 카 스테레오, 개인용 컴퓨터, 휴대용 정보 단말기, 모바일 컴퓨터, 휴대전화, 전자책, 및 기록 매체를 사용하는 플레이어를 포함하는 그룹으로부터 선택되는 적어도 하나의 전자 기기들을 포함하는, 반도체 디바이스 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000064227A JP2001257350A (ja) | 2000-03-08 | 2000-03-08 | 半導体装置およびその作製方法 |
JP2000-064227 | 2000-03-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010089222A KR20010089222A (ko) | 2001-09-29 |
KR100753785B1 true KR100753785B1 (ko) | 2007-08-31 |
Family
ID=18583955
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010012029A KR100753785B1 (ko) | 2000-03-08 | 2001-03-08 | 반도체 디바이스 및 그 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (11) | US6387737B1 (ko) |
JP (1) | JP2001257350A (ko) |
KR (1) | KR100753785B1 (ko) |
TW (1) | TW503444B (ko) |
Families Citing this family (94)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3126661B2 (ja) * | 1996-06-25 | 2001-01-22 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
US6218219B1 (en) * | 1997-09-29 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US7411211B1 (en) * | 1999-07-22 | 2008-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Contact structure and semiconductor device |
JP2001053283A (ja) | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
TW478014B (en) * | 1999-08-31 | 2002-03-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing thereof |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4118485B2 (ja) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
US6812493B2 (en) * | 2000-04-04 | 2004-11-02 | Matsushita Electric Industrial Co., Ltd. | Thin-film semiconductor element and method of producing same |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI220029B (en) * | 2000-10-12 | 2004-08-01 | Au Optronics Corp | Thin film transistor liquid crystal display and its manufacturing method |
US6724150B2 (en) * | 2001-02-01 | 2004-04-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7071037B2 (en) * | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR100799463B1 (ko) * | 2001-03-21 | 2008-02-01 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
KR20030016051A (ko) * | 2001-08-20 | 2003-02-26 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
KR20030045400A (ko) * | 2001-12-04 | 2003-06-11 | 삼성전자주식회사 | 액정 표시 장치용 기판 및 그 제조 방법 |
KR100436181B1 (ko) * | 2002-04-16 | 2004-06-12 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 어레이기판 제조방법 |
TW535296B (en) * | 2002-05-31 | 2003-06-01 | Chunghwa Picture Tubes Ltd | Method for producing thin film transistor |
JP2004212933A (ja) | 2002-12-31 | 2004-07-29 | Lg Phillips Lcd Co Ltd | 液晶表示装置及びアレイ基板の製造方法 |
JP4526771B2 (ja) | 2003-03-14 | 2010-08-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7374981B2 (en) * | 2003-04-11 | 2008-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, electronic device having the same, and method for manufacturing the same |
TWI336921B (en) * | 2003-07-18 | 2011-02-01 | Semiconductor Energy Lab | Method for manufacturing semiconductor device |
CN101452893B (zh) * | 2003-11-14 | 2011-04-13 | 株式会社半导体能源研究所 | 显示装置及其制造法 |
US7592207B2 (en) | 2003-11-14 | 2009-09-22 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method for manufacturing the same |
KR101110766B1 (ko) | 2003-11-14 | 2012-03-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정표시장치 및 액정표시장치의 제조 방법 |
US8742421B2 (en) * | 2003-12-02 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device, method for manufacturing the same, and television apparatus |
KR101111995B1 (ko) * | 2003-12-02 | 2012-03-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터, 디스플레이 장치 및 액정 디스플레이장치, 그리고 그 제조방법 |
EP1700342A2 (en) * | 2003-12-22 | 2006-09-13 | Koninklijke Philips Electronics N.V. | Non-volatile ferroelectric memory device and manufacturing method |
TWI382452B (zh) * | 2004-03-19 | 2013-01-11 | Samsung Display Co Ltd | 薄膜電晶體陣列面板及其製造方法 |
US7183147B2 (en) | 2004-03-25 | 2007-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method for manufacturing thereof and electronic appliance |
US7291522B2 (en) * | 2004-10-28 | 2007-11-06 | Hewlett-Packard Development Company, L.P. | Semiconductor devices and methods of making |
KR101078360B1 (ko) * | 2004-11-12 | 2011-10-31 | 엘지디스플레이 주식회사 | 폴리형 액정 표시 패널 및 그 제조 방법 |
KR101086487B1 (ko) * | 2004-12-24 | 2011-11-25 | 엘지디스플레이 주식회사 | 폴리 박막 트랜지스터 기판 및 그 제조 방법 |
KR100654569B1 (ko) * | 2004-12-30 | 2006-12-05 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR20060081470A (ko) * | 2005-01-07 | 2006-07-13 | 삼성전자주식회사 | 박막트랜지스터 기판과 그 제조방법 |
KR20060089526A (ko) * | 2005-02-04 | 2006-08-09 | 삼성전자주식회사 | 박막 트랜지스터 표시판과 그 제조 방법 |
US7737442B2 (en) * | 2005-06-28 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
EP1770788A3 (en) | 2005-09-29 | 2011-09-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR101158896B1 (ko) * | 2005-10-28 | 2012-06-25 | 삼성전자주식회사 | 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널 |
US7615495B2 (en) * | 2005-11-17 | 2009-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
KR20070071012A (ko) * | 2005-12-29 | 2007-07-04 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 이의 제조 방법 |
TWI617869B (zh) | 2006-05-16 | 2018-03-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置和半導體裝置 |
TW200814325A (en) * | 2006-09-05 | 2008-03-16 | Chunghwa Picture Tubes Ltd | Thim film transistor array substrate and manufacturing process therefor |
KR100785037B1 (ko) * | 2006-12-13 | 2007-12-12 | 삼성전자주식회사 | GaInZnO 다이오드 |
KR101319301B1 (ko) * | 2006-12-15 | 2013-10-16 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
US8207010B2 (en) * | 2007-06-05 | 2012-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing photoelectric conversion device |
JP5064124B2 (ja) * | 2007-06-14 | 2012-10-31 | 出光興産株式会社 | 表示装置用基板及びその製造方法、並びに、液晶表示装置及びその製造方法 |
US7897971B2 (en) * | 2007-07-26 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP5527966B2 (ja) * | 2007-12-28 | 2014-06-25 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ |
JP5584436B2 (ja) * | 2008-07-03 | 2014-09-03 | 株式会社神戸製鋼所 | 薄膜トランジスタ基板の製造方法 |
CN102165570A (zh) * | 2008-08-29 | 2011-08-24 | 株式会社爱发科 | 场效应晶体管的制造方法和制造装置 |
US8114720B2 (en) | 2008-12-25 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US20100224878A1 (en) | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8202769B2 (en) | 2009-03-11 | 2012-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR101906751B1 (ko) * | 2009-03-12 | 2018-10-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
TWI556323B (zh) * | 2009-03-13 | 2016-11-01 | 半導體能源研究所股份有限公司 | 半導體裝置及該半導體裝置的製造方法 |
TW201039034A (en) * | 2009-04-27 | 2010-11-01 | Chunghwa Picture Tubes Ltd | Pixel structure and the method of forming the same |
DE102009038709B4 (de) * | 2009-08-25 | 2017-05-11 | Infineon Technologies Austria Ag | Halbleiterbauelement mit dielektrischem Schichtstapel |
CN102667597B (zh) * | 2009-12-08 | 2015-01-21 | 夏普株式会社 | 有源矩阵基板和显示装置 |
TWI535028B (zh) * | 2009-12-21 | 2016-05-21 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
KR101836067B1 (ko) * | 2009-12-21 | 2018-03-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박막 트랜지스터와 그 제작 방법 |
US8476744B2 (en) | 2009-12-28 | 2013-07-02 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with channel including microcrystalline and amorphous semiconductor regions |
KR102129540B1 (ko) * | 2010-01-20 | 2020-07-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
JP2011164196A (ja) * | 2010-02-05 | 2011-08-25 | Seiko Epson Corp | 電気光学装置用基板、電気光学装置及び電子機器 |
KR20110092545A (ko) * | 2010-02-09 | 2011-08-18 | 삼성전자주식회사 | 촬상 장치 |
JP5638833B2 (ja) * | 2010-04-22 | 2014-12-10 | 株式会社ジャパンディスプレイ | 画像表示装置及びその製造方法 |
WO2011145537A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
KR20120021537A (ko) * | 2010-08-06 | 2012-03-09 | 삼성전자주식회사 | 액정 표시 장치 |
US8704230B2 (en) | 2010-08-26 | 2014-04-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9230826B2 (en) | 2010-08-26 | 2016-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Etching method using mixed gas and method for manufacturing semiconductor device |
CN102254917B (zh) * | 2011-07-07 | 2014-05-21 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制法 |
TW201308616A (zh) * | 2011-08-03 | 2013-02-16 | Motech Ind Inc | 於基板上形成導電性圖案之方法 |
TWI485846B (zh) * | 2011-11-16 | 2015-05-21 | Au Optronics Corp | 具可撓性基板之顯示裝置及其製造方法 |
KR20130066247A (ko) * | 2011-12-12 | 2013-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
US20130207111A1 (en) | 2012-02-09 | 2013-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including semiconductor device, electronic device including semiconductor device, and method for manufacturing semiconductor device |
JP2014240942A (ja) * | 2012-09-13 | 2014-12-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、パターン形成方法、並びに、これらを用いた電子デバイスの製造方法、及び、電子デバイス |
JP6124577B2 (ja) | 2012-12-12 | 2017-05-10 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法 |
TWI527505B (zh) | 2013-01-10 | 2016-03-21 | 元太科技工業股份有限公司 | 電路基板結構及其製造方法 |
TWI612689B (zh) | 2013-04-15 | 2018-01-21 | 半導體能源研究所股份有限公司 | 發光裝置 |
JP5732552B2 (ja) * | 2014-01-27 | 2015-06-10 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP6307022B2 (ja) * | 2014-03-05 | 2018-04-04 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記録媒体 |
JP2015200753A (ja) * | 2014-04-07 | 2015-11-12 | 株式会社ジャパンディスプレイ | 表示装置 |
JP6674764B2 (ja) * | 2014-12-01 | 2020-04-01 | 株式会社半導体エネルギー研究所 | 表示パネルの作製方法 |
CN104375347B (zh) * | 2014-12-04 | 2017-06-06 | 合肥鑫晟光电科技有限公司 | 阵列基板、修补片、显示面板和修复阵列基板的方法 |
CN104637949B (zh) * | 2015-01-24 | 2017-11-17 | 复旦大学 | 非破坏性读出铁电存储器及其制备方法和操作方法 |
WO2016115826A1 (zh) * | 2015-01-24 | 2016-07-28 | 复旦大学 | 非破坏性读出铁电存储器及其制备方法和操作方法 |
US10263114B2 (en) | 2016-03-04 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
CN105974704A (zh) * | 2016-07-22 | 2016-09-28 | 京东方科技集团股份有限公司 | 像素结构及其驱动方法、显示基板和显示面板 |
CN106909006A (zh) * | 2017-04-25 | 2017-06-30 | 昆山龙腾光电有限公司 | 黏贴结构及采用该黏贴结构的导电构造和液晶显示装置 |
CN111179780B (zh) * | 2020-03-13 | 2021-08-10 | 江西慧勤光电科技有限公司 | 一种高度防水的液晶显示屏组件 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5362660A (en) * | 1990-10-05 | 1994-11-08 | General Electric Company | Method of making a thin film transistor structure with improved source/drain contacts |
US5532180A (en) * | 1995-06-02 | 1996-07-02 | Ois Optical Imaging Systems, Inc. | Method of fabricating a TFT with reduced channel length |
US5668379A (en) * | 1994-07-27 | 1997-09-16 | Hitachi, Ltd. | Active matrix crystal display apparatus using thin film transistor |
US5706064A (en) * | 1995-03-31 | 1998-01-06 | Kabushiki Kaisha Toshiba | LCD having an organic-inorganic hybrid glass functional layer |
KR20000004404A (ko) * | 1998-06-30 | 2000-01-25 | 김영환 | Tft-lcd 제조방법 |
Family Cites Families (285)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3967981A (en) | 1971-01-14 | 1976-07-06 | Shumpei Yamazaki | Method for manufacturing a semiconductor field effort transistor |
JPS5724917A (en) | 1980-07-23 | 1982-02-09 | Hitachi Ltd | Multilayer liquid crystal panel |
JPS58188684A (ja) | 1982-04-30 | 1983-11-04 | Canon Inc | 記録装置 |
JPS58188684U (ja) | 1982-06-10 | 1983-12-15 | セイコーエプソン株式会社 | 電子表示装置 |
JPS6097386A (ja) | 1983-11-01 | 1985-05-31 | セイコーインスツルメンツ株式会社 | 液晶表示装置 |
JPH0682839B2 (ja) | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
US4730903A (en) | 1985-01-23 | 1988-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Ferroelectric crystal display panel and manufacturing method thereof |
JPH0797639B2 (ja) | 1985-02-15 | 1995-10-18 | シャープ株式会社 | 表示パネル基板 |
JPH0618215B2 (ja) | 1985-12-03 | 1994-03-09 | セイコー電子工業株式会社 | 薄膜トランジスタの製造方法 |
DE3689843T2 (de) | 1986-03-06 | 1994-09-01 | Toshiba Kawasaki Kk | Steuerschaltung einer Flüssigkristallanzeige. |
JPS62265756A (ja) | 1986-05-14 | 1987-11-18 | Oki Electric Ind Co Ltd | 薄膜トランジスタマトリクス |
JPS6344742A (ja) | 1986-08-12 | 1988-02-25 | Fujitsu Ltd | 半導体装置 |
JPS6382405A (ja) | 1986-09-27 | 1988-04-13 | Canon Inc | 強誘電性液晶素子 |
US4960719A (en) | 1988-02-04 | 1990-10-02 | Seikosha Co., Ltd. | Method for producing amorphous silicon thin film transistor array substrate |
JPH01210989A (ja) * | 1988-02-19 | 1989-08-24 | Hitachi Ltd | 液晶表示装置 |
US5231039A (en) | 1988-02-25 | 1993-07-27 | Sharp Kabushiki Kaisha | Method of fabricating a liquid crystal display device |
JPH01217423A (ja) | 1988-02-26 | 1989-08-31 | Seikosha Co Ltd | 非晶質シリコン薄膜トランジスタアレイ基板 |
JPH0242761A (ja) | 1988-04-20 | 1990-02-13 | Matsushita Electric Ind Co Ltd | アクティブマトリクス基板の製造方法 |
JP2653099B2 (ja) | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
JPH0268524A (ja) | 1988-09-05 | 1990-03-08 | Hitachi Ltd | 液晶表示装置 |
JPH0277019A (ja) | 1988-09-13 | 1990-03-16 | Optrex Corp | 電気光学装置及び導電接続方法 |
US5130833A (en) | 1989-09-01 | 1992-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal device and manufacturing method therefor |
DE69032893T2 (de) | 1989-11-30 | 1999-07-22 | Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa | Werkstoff für elektrische Leiter, Elektronikagerät welches diesen verwendet und Flüssig-Kristall-Anzeige |
JP2657429B2 (ja) | 1990-04-09 | 1997-09-24 | 株式会社ミクロ技術研究所 | 基板の回路実装方法及びその方法に使用する回路基板 |
US5151806A (en) | 1990-04-27 | 1992-09-29 | Mitsubishi Denki Kabushiki Kaisha | Liquid crystal display apparatus having a series combination of the storage capacitors |
EP0459832B1 (en) | 1990-05-31 | 1996-09-04 | Canon Kabushiki Kaisha | Liquid crystal colour display device and method for producing the same |
JP2875363B2 (ja) | 1990-08-08 | 1999-03-31 | 株式会社日立製作所 | 液晶表示装置 |
US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
KR950001360B1 (ko) | 1990-11-26 | 1995-02-17 | 가부시키가이샤 한도오따이 에네루기 겐큐쇼 | 전기 광학장치와 그 구동방법 |
JP3260770B2 (ja) | 1991-02-28 | 2002-02-25 | 京セラ株式会社 | 液晶表示装置 |
US5261156A (en) | 1991-02-28 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of electrically connecting an integrated circuit to an electric device |
JP3255942B2 (ja) | 1991-06-19 | 2002-02-12 | 株式会社半導体エネルギー研究所 | 逆スタガ薄膜トランジスタの作製方法 |
US5391920A (en) | 1991-07-09 | 1995-02-21 | Yamaha Corporation | Semiconductor device having peripheral metal wiring |
JPH0534717A (ja) | 1991-07-26 | 1993-02-12 | Sanyo Electric Co Ltd | 液晶表示装置およびその製造方法 |
JP2866516B2 (ja) | 1991-10-30 | 1999-03-08 | 京セラ株式会社 | アクティブマトリックス基板およびその製造方法 |
US5739882A (en) | 1991-11-18 | 1998-04-14 | Semiconductor Energy Laboratory Co., Ltd. | LCD polymerized column spacer formed on a modified substrate, from an acrylic resin, on a surface having hydrophilic and hydrophobic portions, or at regular spacings |
JPH05142558A (ja) * | 1991-11-26 | 1993-06-11 | Fujitsu Ltd | 液晶表示装置 |
JPH05175500A (ja) * | 1991-12-26 | 1993-07-13 | Kyocera Corp | アクティブマトリックス基板の製造方法 |
GB9200839D0 (en) | 1992-01-15 | 1992-03-11 | Emi Plc Thorn | Optical modulation device |
US5418635A (en) | 1992-02-19 | 1995-05-23 | Sharp Kabushiki Kaisha | Liquid crystal device with a reflective substrate with bumps of photosensitive resin which have 2 or more heights and random configuration |
JP3125411B2 (ja) | 1992-02-21 | 2001-01-15 | 株式会社日立製作所 | 液晶表示装置 |
JPH05265020A (ja) * | 1992-03-18 | 1993-10-15 | Hitachi Ltd | テープキャリアパッケージ |
GB9206086D0 (en) | 1992-03-20 | 1992-05-06 | Philips Electronics Uk Ltd | Manufacturing electronic devices comprising,e.g.tfts and mims |
JP2793076B2 (ja) | 1992-05-20 | 1998-09-03 | シャープ株式会社 | 反射型液晶表示装置およびその製造方法 |
JPH0682754A (ja) | 1992-07-16 | 1994-03-25 | Toshiba Corp | アクティブマトリクス型表示装置 |
JP3120200B2 (ja) | 1992-10-12 | 2000-12-25 | セイコーインスツルメンツ株式会社 | 光弁装置、立体画像表示装置および画像プロジェクタ |
US5418835A (en) * | 1992-10-26 | 1995-05-23 | Motorola Inc. | Method of delivering paging messages using voice mail |
JP2988159B2 (ja) * | 1992-11-13 | 1999-12-06 | 日本電気株式会社 | 液晶表示装置 |
JPH06194615A (ja) | 1992-12-24 | 1994-07-15 | Casio Comput Co Ltd | 強誘電性液晶素子の製造方法 |
JP2902534B2 (ja) | 1993-02-18 | 1999-06-07 | ローム株式会社 | 液晶表示装置 |
JPH06250210A (ja) | 1993-02-23 | 1994-09-09 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
US5821622A (en) | 1993-03-12 | 1998-10-13 | Kabushiki Kaisha Toshiba | Liquid crystal display device |
FR2702882B1 (fr) | 1993-03-16 | 1995-07-28 | Thomson Lcd | Procédé de fabrication de transistors à couches minces étagés directs. |
JPH06268222A (ja) | 1993-03-16 | 1994-09-22 | Hitachi Ltd | 液晶表示装置及びその製造方法 |
JP3512849B2 (ja) | 1993-04-23 | 2004-03-31 | 株式会社東芝 | 薄膜トランジスタおよびそれを用いた表示装置 |
US5346833A (en) | 1993-04-05 | 1994-09-13 | Industrial Technology Research Institute | Simplified method of making active matrix liquid crystal display |
JPH07152024A (ja) | 1993-05-17 | 1995-06-16 | Sharp Corp | 液晶表示素子 |
GB9311129D0 (en) | 1993-05-28 | 1993-07-14 | Philips Electronics Uk Ltd | Electronic devices with-film circuit elements forming a sampling circuit |
JPH0713196A (ja) | 1993-06-21 | 1995-01-17 | Toshiba Corp | アクティブマトリックス型液晶表示装置 |
US6190933B1 (en) | 1993-06-30 | 2001-02-20 | The United States Of America As Represented By The Secretary Of The Navy | Ultra-high resolution liquid crystal display on silicon-on-sapphire |
EP0636917B1 (en) | 1993-07-27 | 1998-09-30 | Sharp Kabushiki Kaisha | Liquid crystal display |
JPH07335904A (ja) | 1994-06-14 | 1995-12-22 | Semiconductor Energy Lab Co Ltd | 薄膜半導体集積回路 |
JPH07120789A (ja) | 1993-10-28 | 1995-05-12 | Hitachi Ltd | 液晶表示装置及びその製造方法 |
JPH07131030A (ja) * | 1993-11-05 | 1995-05-19 | Sony Corp | 表示用薄膜半導体装置及びその製造方法 |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
JPH07159776A (ja) | 1993-12-07 | 1995-06-23 | Casio Comput Co Ltd | 反射型液晶表示装置 |
JP3060806B2 (ja) | 1993-12-16 | 2000-07-10 | 松下電器産業株式会社 | 液晶表示装置及びその製造方法 |
JPH07191348A (ja) | 1993-12-27 | 1995-07-28 | Rohm Co Ltd | 液晶表示装置の製法 |
JP2738289B2 (ja) | 1993-12-30 | 1998-04-08 | 日本電気株式会社 | 液晶表示装置の製造方法 |
US5822026A (en) | 1994-02-17 | 1998-10-13 | Seiko Epson Corporation | Active matrix substrate and color liquid crystal display |
KR0139346B1 (ko) | 1994-03-03 | 1998-06-15 | 김광호 | 박막 트랜지스터 액정표시장치의 제조방법 |
JPH07263698A (ja) | 1994-03-17 | 1995-10-13 | Hitachi Ltd | 薄膜トランジスタ及びその製造方法 |
US5729312A (en) | 1994-03-18 | 1998-03-17 | Sharp Kabushiki Kaisha | LCD and method for producing the same in which a larger number of substrate gap control materials is larger in the polymer walls than in the liquid crystal regions |
US5668651A (en) | 1994-03-18 | 1997-09-16 | Sharp Kabushiki Kaisha | Polymer-wall LCD having liquid crystal molecules having a plane-symmetrical bend orientation |
US5561074A (en) | 1994-04-22 | 1996-10-01 | Nec Corporation | Method for fabricating reverse-staggered thin-film transistor |
JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
TW269743B (ko) | 1994-04-26 | 1996-02-01 | Toshiba Eng Co | |
JPH07318975A (ja) | 1994-05-25 | 1995-12-08 | Sanyo Electric Co Ltd | 液晶表示装置 |
KR960000262A (ko) | 1994-06-16 | 1996-01-25 | 차유성 | 실내구기 연습장 |
JP3253808B2 (ja) | 1994-07-07 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JPH0864829A (ja) | 1994-08-24 | 1996-03-08 | Hitachi Ltd | 半導体装置とこれを用いた液晶表示装置 |
JP3122003B2 (ja) | 1994-08-24 | 2001-01-09 | シャープ株式会社 | アクティブマトリクス基板 |
JPH0864828A (ja) | 1994-08-24 | 1996-03-08 | Oki Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
JP3238020B2 (ja) * | 1994-09-16 | 2001-12-10 | 株式会社東芝 | アクティブマトリクス表示装置の製造方法 |
JPH0887030A (ja) | 1994-09-16 | 1996-04-02 | Hitachi Ltd | 液晶表示装置の製造方法 |
JP3097945B2 (ja) | 1994-10-03 | 2000-10-10 | シャープ株式会社 | 反射型液晶表示装置の製造方法 |
JP3517458B2 (ja) * | 1994-10-21 | 2004-04-12 | 株式会社 日立ディスプレイズ | 液晶表示装置 |
TW344043B (en) | 1994-10-21 | 1998-11-01 | Hitachi Ltd | Liquid crystal display device with reduced frame portion surrounding display area |
KR100336554B1 (ko) | 1994-11-23 | 2002-11-23 | 주식회사 하이닉스반도체 | 반도체소자의배선층형성방법 |
JPH08201853A (ja) | 1994-11-24 | 1996-08-09 | Toshiba Electron Eng Corp | 電極基板および平面表示装置 |
JPH08228011A (ja) | 1994-12-14 | 1996-09-03 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH08220562A (ja) | 1994-12-14 | 1996-08-30 | Toshiba Corp | 表示装置用アレイ基板およびその製造方法 |
JP3364081B2 (ja) | 1995-02-16 | 2003-01-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JPH08227283A (ja) | 1995-02-21 | 1996-09-03 | Seiko Epson Corp | 液晶表示装置、その駆動方法及び表示システム |
US5757456A (en) | 1995-03-10 | 1998-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating involving peeling circuits from one substrate and mounting on other |
US5834327A (en) | 1995-03-18 | 1998-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for producing display device |
JP3499327B2 (ja) | 1995-03-27 | 2004-02-23 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
KR100303134B1 (ko) | 1995-05-09 | 2002-11-23 | 엘지.필립스 엘시디 주식회사 | 액정표시소자및그제조방법. |
US5539219A (en) * | 1995-05-19 | 1996-07-23 | Ois Optical Imaging Systems, Inc. | Thin film transistor with reduced channel length for liquid crystal displays |
US6124606A (en) | 1995-06-06 | 2000-09-26 | Ois Optical Imaging Systems, Inc. | Method of making a large area imager with improved signal-to-noise ratio |
US5994721A (en) | 1995-06-06 | 1999-11-30 | Ois Optical Imaging Systems, Inc. | High aperture LCD with insulating color filters overlapping bus lines on active substrate |
JPH095767A (ja) * | 1995-06-22 | 1997-01-10 | Sanyo Electric Co Ltd | 液晶パネルの入力端構造 |
JPH0915621A (ja) | 1995-06-29 | 1997-01-17 | Kyocera Corp | 液晶表示装置 |
JP3744980B2 (ja) | 1995-07-27 | 2006-02-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2990046B2 (ja) | 1995-08-16 | 1999-12-13 | 日本電気株式会社 | 反射型液晶表示装置及びその製造方法 |
KR100338480B1 (ko) | 1995-08-19 | 2003-01-24 | 엘지.필립스 엘시디 주식회사 | 액정표시장치및그제조방법 |
JPH0964366A (ja) | 1995-08-23 | 1997-03-07 | Toshiba Corp | 薄膜トランジスタ |
KR100204071B1 (ko) | 1995-08-29 | 1999-06-15 | 구자홍 | 박막트랜지스터-액정표시장치 및 제조방법 |
JPH0974257A (ja) | 1995-09-01 | 1997-03-18 | Dainippon Printing Co Ltd | 厚膜配線およびその製造方法 |
JP3474975B2 (ja) | 1995-09-06 | 2003-12-08 | 株式会社 日立ディスプレイズ | 液晶表示装置およびその製造方法 |
JP3199215B2 (ja) | 1995-09-14 | 2001-08-13 | シャープ株式会社 | 液晶表示素子およびその製造方法 |
WO1997010530A1 (fr) | 1995-09-14 | 1997-03-20 | Hitachi, Ltd. | Dispositif d'affichage a cristaux liquides et a matrice active |
JPH0990397A (ja) | 1995-09-28 | 1997-04-04 | Sharp Corp | アクティブマトリクス基板およびそれを用いた表示装置 |
JPH09127551A (ja) | 1995-10-31 | 1997-05-16 | Sharp Corp | 半導体装置およびアクティブマトリクス基板 |
US5959599A (en) | 1995-11-07 | 1999-09-28 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type liquid-crystal display unit and method of driving the same |
TW329500B (en) | 1995-11-14 | 1998-04-11 | Handotai Energy Kenkyusho Kk | Electro-optical device |
JPH09146108A (ja) | 1995-11-17 | 1997-06-06 | Semiconductor Energy Lab Co Ltd | 液晶表示装置およびその駆動方法 |
KR0175409B1 (ko) | 1995-11-20 | 1999-02-18 | 김광호 | 액정 표시 장치용 박막 트랜지스터 기판의 제조 방법 |
EP0775931B1 (en) | 1995-11-21 | 2005-10-05 | Samsung Electronics Co., Ltd. | Method of manufacturing a liquid crystal display |
KR0175410B1 (ko) | 1995-11-21 | 1999-02-01 | 김광호 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
KR100219118B1 (ko) | 1996-08-30 | 1999-09-01 | 구자홍 | 박막트랜지스터 액정표시장치 및 그 제조방법 |
KR0161466B1 (ko) | 1995-11-29 | 1999-01-15 | 김광호 | 액정표시장치의 제조방법 |
JPH09152626A (ja) | 1995-11-29 | 1997-06-10 | Kyocera Corp | 液晶表示装置およびその製造方法 |
JPH09153618A (ja) | 1995-11-30 | 1997-06-10 | Sanyo Electric Co Ltd | 液晶表示装置の製造方法 |
US5739880A (en) | 1995-12-01 | 1998-04-14 | Hitachi, Ltd. | Liquid crystal display device having a shielding film for shielding light from a light source |
KR100268069B1 (ko) | 1995-12-11 | 2000-10-16 | 마찌다 가쯔히꼬 | 반사판, 반사판이 결합된 반사형 액정 표시 장치 및 그 제조 방 법 |
JPH09160071A (ja) | 1995-12-12 | 1997-06-20 | Toshiba Corp | 液晶表示装置 |
JP3963974B2 (ja) | 1995-12-20 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 液晶電気光学装置 |
KR100190041B1 (ko) | 1995-12-28 | 1999-06-01 | 윤종용 | 액정표시장치의 제조방법 |
JPH09203890A (ja) | 1996-01-25 | 1997-08-05 | Sharp Corp | 入力機能付き液晶表示素子および反射型入力機能付き液晶表示素子、並びにそれらの製造方法 |
JP3133248B2 (ja) * | 1996-01-27 | 2001-02-05 | 株式会社半導体エネルギー研究所 | 電気光学装置 |
US6055028A (en) | 1996-02-14 | 2000-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal electro-optical device |
US6697129B1 (en) | 1996-02-14 | 2004-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Guest-host mode liquid crystal display device of lateral electric field driving type |
US5793072A (en) | 1996-02-28 | 1998-08-11 | International Business Machines Corporation | Non-photosensitive, vertically redundant 2-channel α-Si:H thin film transistor |
JP3708620B2 (ja) | 1996-03-01 | 2005-10-19 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型液晶電気光学装置 |
US5986724A (en) | 1996-03-01 | 1999-11-16 | Kabushiki Kaisha Toshiba | Liquid crystal display with liquid crystal layer and ferroelectric layer connected to drain of TFT |
JP3597305B2 (ja) | 1996-03-05 | 2004-12-08 | 株式会社半導体エネルギー研究所 | 液晶表示装置およびその作製方法 |
JPH09304757A (ja) | 1996-03-11 | 1997-11-28 | Sharp Corp | 液晶表示素子及びその製造方法 |
KR100213969B1 (ko) | 1996-03-15 | 1999-08-02 | 구자홍 | 액티브 매트릭스의 제조방법 및 구조 |
US5847687A (en) | 1996-03-26 | 1998-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of active matrix display device |
US6911962B1 (en) | 1996-03-26 | 2005-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of active matrix display device |
JPH09265113A (ja) | 1996-03-28 | 1997-10-07 | Nec Corp | アクティブマトリクス型液晶表示装置およびその製造方 法 |
JPH09274444A (ja) | 1996-04-04 | 1997-10-21 | Hitachi Ltd | 液晶表示装置 |
JPH1010583A (ja) | 1996-04-22 | 1998-01-16 | Sharp Corp | アクティブマトリクス基板の製造方法、およびそのアクティブマトリクス基板 |
KR100223158B1 (ko) * | 1996-06-07 | 1999-10-15 | 구자홍 | 액티브매트릭스기판 및 그 제조방법 |
US6188452B1 (en) | 1996-07-09 | 2001-02-13 | Lg Electronics, Inc | Active matrix liquid crystal display and method of manufacturing same |
JPH1170610A (ja) | 1996-07-26 | 1999-03-16 | Asahi Glass Co Ltd | 透明導電膜、および透明電極の形成方法 |
WO1998004406A1 (fr) | 1996-07-26 | 1998-02-05 | Asahi Glass Company Ltd. | Pellicule conductrice transparente et procede pour former une electrode transparente |
KR100196336B1 (en) | 1996-07-27 | 1999-06-15 | Lg Electronics Inc | Method of manufacturing thin film transistor |
JP3622934B2 (ja) | 1996-07-31 | 2005-02-23 | エルジー フィリップス エルシーディー カンパニー リミテッド | 薄膜トランジスタ型液晶表示装置 |
KR100240818B1 (ko) | 1996-08-01 | 2000-01-15 | 나시모토 류조 | 테이프캐리어패키지를 구비한 액정표시장치 |
JP2798066B2 (ja) | 1996-08-05 | 1998-09-17 | 日本電気株式会社 | 薄膜トランジスター、その製造方法および表示装置 |
JP3657702B2 (ja) | 1996-08-06 | 2005-06-08 | 株式会社東芝 | 液晶表示装置 |
JPH1068931A (ja) | 1996-08-28 | 1998-03-10 | Sharp Corp | アクティブマトリクス型液晶表示装置 |
US6437844B1 (en) | 1996-09-04 | 2002-08-20 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal display device and associated fabrication method |
JP3042417B2 (ja) | 1996-09-13 | 2000-05-15 | 日本電気株式会社 | 耐腐食性配線およびこれを用いる能動素子並びに表示装置 |
JPH1096944A (ja) | 1996-09-25 | 1998-04-14 | Toshiba Electron Eng Corp | 電気的接続構造および液晶表示装置 |
JPH10104663A (ja) | 1996-09-27 | 1998-04-24 | Semiconductor Energy Lab Co Ltd | 電気光学装置およびその作製方法 |
KR100268103B1 (ko) | 1996-10-11 | 2000-10-16 | 윤종용 | 질화크롬을사용한배선및그제조방법,이를이용한액정표시장치및그제조방법 |
TW451284B (en) | 1996-10-15 | 2001-08-21 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
JPH10123574A (ja) | 1996-10-17 | 1998-05-15 | Hitachi Ltd | アクティブマトリクス基板 |
EP1967899B1 (en) | 1996-10-22 | 2013-01-23 | Seiko Epson Corporation | Reflective liquid crystal panel substrate |
JP3043638B2 (ja) | 1996-11-05 | 2000-05-22 | 日本電気株式会社 | 反射型液晶表示装置およびその製造方法 |
JPH10144928A (ja) | 1996-11-08 | 1998-05-29 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
KR100212284B1 (ko) * | 1996-11-13 | 1999-08-02 | 윤종용 | 채널 보호형 박막 트랜지스터 기판 |
JP3788649B2 (ja) | 1996-11-22 | 2006-06-21 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR100450544B1 (ko) | 1996-11-27 | 2004-10-01 | 가부시키가이샤 히타치세이사쿠쇼 | 액티브 매트릭스형 액정 표시 장치 |
US6266121B1 (en) | 1996-11-28 | 2001-07-24 | Sharp Kabushiki Kaisha | Liquid crystal display element and method of manufacturing same |
KR100244182B1 (ko) | 1996-11-29 | 2000-02-01 | 구본준 | 액정표시장치 |
JPH10170959A (ja) | 1996-12-16 | 1998-06-26 | Casio Comput Co Ltd | 液晶表示装置 |
US6075257A (en) | 1996-12-23 | 2000-06-13 | Samsung Electronics Co., Ltd. | Thin film transistor substrate for a liquid crystal display having a silicide prevention insulating layer in the electrode structure |
JPH10241464A (ja) | 1996-12-26 | 1998-09-11 | Asahi Glass Co Ltd | 透明導電膜付き基体とその製造方法 |
JPH10198292A (ja) | 1996-12-30 | 1998-07-31 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP3883244B2 (ja) | 1997-01-23 | 2007-02-21 | エルジー フィリップス エルシーディー カンパニー リミテッド | 液晶表示装置 |
US5831710A (en) | 1997-02-06 | 1998-11-03 | International Business Machines Corporation | Liquid crystal display |
JPH10221704A (ja) | 1997-02-07 | 1998-08-21 | Sharp Corp | 反射型液晶表示装置およびその製造方法 |
KR100537020B1 (ko) | 1997-03-03 | 2006-03-03 | 삼성전자주식회사 | Ips모드박막트랜지스터용액정표시소자제조방법 |
KR100307385B1 (ko) * | 1997-03-05 | 2001-12-15 | 구본준, 론 위라하디락사 | 액정표시장치의구조및그제조방법 |
JPH10307288A (ja) | 1997-05-09 | 1998-11-17 | Minolta Co Ltd | 液晶素子及びその製造方法 |
KR100257370B1 (ko) | 1997-05-19 | 2000-05-15 | 구본준 | 횡전계방식액정표시장치 |
US6465268B2 (en) | 1997-05-22 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an electro-optical device |
KR100268006B1 (ko) | 1997-05-22 | 2000-10-16 | 구본준 | 액정표시소자용반사판의제조방법 |
KR100262953B1 (ko) | 1997-06-11 | 2000-08-01 | 구본준 | 액정 표시 장치 및 그 액정 표시 장치의 제조 방법 |
TWI271590B (en) | 1997-06-12 | 2007-01-21 | Sharp Kk | Liquid crystal display device |
JP3297372B2 (ja) | 1997-06-17 | 2002-07-02 | シャープ株式会社 | 反射型液晶表示装置の製造方法 |
US5943559A (en) | 1997-06-23 | 1999-08-24 | Nec Corporation | Method for manufacturing liquid crystal display apparatus with drain/source silicide electrodes made by sputtering process |
JP3847419B2 (ja) | 1997-07-02 | 2006-11-22 | 三菱電機株式会社 | 液晶表示装置 |
JPH1124063A (ja) | 1997-07-03 | 1999-01-29 | Seiko Instr Inc | 反射型液晶表示装置およびその製造方法 |
KR100257976B1 (ko) | 1997-07-22 | 2000-06-01 | 구본준, 론 위라하디락사 | 횡전계방식액정표시장치 |
KR100510439B1 (ko) | 1997-08-20 | 2005-10-21 | 삼성전자주식회사 | 더미돌출패드를 구비한 액정구동칩의 칩온글라스 패키지 구조 및 패키징 방법 |
US6177968B1 (en) | 1997-09-01 | 2001-01-23 | Canon Kabushiki Kaisha | Optical modulation device with pixels each having series connected electrode structure |
US6218219B1 (en) | 1997-09-29 | 2001-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method thereof |
US6265889B1 (en) | 1997-09-30 | 2001-07-24 | Kabushiki Kaisha Toshiba | Semiconductor test circuit and a method for testing a semiconductor liquid crystal display circuit |
JPH11109390A (ja) | 1997-09-30 | 1999-04-23 | Toshiba Corp | 液晶表示装置 |
JPH11109372A (ja) | 1997-09-30 | 1999-04-23 | Toshiba Electronic Engineering Corp | 液晶表示素子用基板の製造方法、液晶表示素子の製造方法、液晶表示素子用基板及び液晶表示素子 |
JP3907804B2 (ja) | 1997-10-06 | 2007-04-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
KR100476622B1 (ko) | 1997-10-13 | 2005-08-23 | 삼성전자주식회사 | 몰리브덴-텅스턴합금을사용한배선을이용한액정표시장치및그제조방법 |
US6359672B2 (en) | 1997-10-20 | 2002-03-19 | Guardian Industries Corp. | Method of making an LCD or X-ray imaging device with first and second insulating layers |
JP3111944B2 (ja) | 1997-10-20 | 2000-11-27 | 日本電気株式会社 | アクティブマトリクス液晶表示装置 |
US6133977A (en) | 1997-10-21 | 2000-10-17 | Samsung Electronics Co., Ltd. | Liquid crystal displays having common electrode overlap with one or more data lines |
JP4131297B2 (ja) * | 1997-10-24 | 2008-08-13 | エルジー ディスプレイ カンパニー リミテッド | 液晶表示装置の製造方法 |
US5907380A (en) | 1997-10-30 | 1999-05-25 | International Business Machines Corporation | Liquid crystal cell employing thin wall for pre-tilt control |
WO1999025906A1 (fr) | 1997-11-18 | 1999-05-27 | Mitsubishi Chemical Corporation | Fluide de conversion chimique destine a la formation d'une couche mince d'oxyde metallique |
US6215541B1 (en) | 1997-11-20 | 2001-04-10 | Samsung Electronics Co., Ltd. | Liquid crystal displays and manufacturing methods thereof |
JP3608958B2 (ja) | 1997-11-27 | 2005-01-12 | 三菱化学株式会社 | 金属酸化物皮膜形成用化成液 |
US7202497B2 (en) | 1997-11-27 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP4014710B2 (ja) | 1997-11-28 | 2007-11-28 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP4217287B2 (ja) | 1997-11-28 | 2009-01-28 | 三菱電機株式会社 | Tftアレイ基板およびこれを用いた液晶表示装置 |
JPH11160734A (ja) | 1997-11-28 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 液晶電気光学装置 |
JPH11183915A (ja) | 1997-12-22 | 1999-07-09 | Nec Corp | アクティブマトリクス型液晶表示装置 |
JP3361278B2 (ja) | 1997-12-26 | 2003-01-07 | シャープ株式会社 | 反射型液晶表示装置とその製造方法、ならびに回路基板の製造方法 |
JP3481843B2 (ja) | 1997-12-26 | 2003-12-22 | シャープ株式会社 | 液晶表示装置 |
KR100269518B1 (ko) | 1997-12-29 | 2000-10-16 | 구본준 | 박막트랜지스터 제조방법 |
JPH11264991A (ja) | 1998-01-13 | 1999-09-28 | Matsushita Electric Ind Co Ltd | 液晶表示素子の製造方法 |
TWI226470B (en) | 1998-01-19 | 2005-01-11 | Hitachi Ltd | LCD device |
JP3765194B2 (ja) | 1998-01-19 | 2006-04-12 | 株式会社日立製作所 | 液晶表示装置 |
US5998229A (en) | 1998-01-30 | 1999-12-07 | Samsung Electronics Co., Ltd. | Methods of manufacturing thin film transistors and liquid crystal displays by plasma treatment of undoped amorphous silicon |
JPH11307756A (ja) * | 1998-02-20 | 1999-11-05 | Canon Inc | 光電変換装置および放射線読取装置 |
US6617648B1 (en) | 1998-02-25 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Projection TV |
JP3019831B2 (ja) | 1998-03-11 | 2000-03-13 | 日本電気株式会社 | 反射型液晶表示装置及びその製造方法 |
KR100502805B1 (ko) | 1998-03-12 | 2005-11-21 | 삼성전자주식회사 | 액정 표시 장치 및 그 제조 방법 |
JPH11258625A (ja) | 1998-03-12 | 1999-09-24 | Toshiba Corp | 表示装置用アレイ基板及びその製造方法 |
KR100320007B1 (ko) | 1998-03-13 | 2002-01-10 | 니시무로 타이죠 | 표시장치용 어레이기판의 제조방법 |
JP3050199B2 (ja) | 1998-03-18 | 2000-06-12 | 日本電気株式会社 | 配線端子およびその形成方法 |
KR19990075407A (ko) | 1998-03-20 | 1999-10-15 | 윤종용 | 박막 트랜지스터 기판의 제조 방법 |
JP3396620B2 (ja) | 1998-03-20 | 2003-04-14 | シャープ株式会社 | アクティブマトリクス基板およびその検査方法 |
JPH11271718A (ja) | 1998-03-25 | 1999-10-08 | Sharp Corp | 液晶表示装置、プラズマアドレス型液晶表示装置及びその製造方法 |
JPH11337976A (ja) | 1998-03-26 | 1999-12-10 | Toshiba Corp | 表示装置用アレイ基板及びこのアレイ基板を備えた平面表示装置 |
JPH11352322A (ja) | 1998-04-07 | 1999-12-24 | Toray Ind Inc | カラ―フィルタ及びそれを用いたカラ―液晶表示装置 |
KR100320661B1 (ko) | 1998-04-17 | 2002-01-17 | 니시무로 타이죠 | 액정표시장치, 매트릭스 어레이기판 및 그 제조방법 |
JP2000002892A (ja) | 1998-04-17 | 2000-01-07 | Toshiba Corp | 液晶表示装置、マトリクスアレイ基板およびその製造方法 |
US6300926B1 (en) | 1998-04-27 | 2001-10-09 | Hitachi, Ltd. | Active matrix type liquid crystal display |
JPH11337961A (ja) | 1998-05-26 | 1999-12-10 | Sharp Corp | 反射型液晶表示装置およびその製造方法 |
JP3726495B2 (ja) | 1998-05-27 | 2005-12-14 | セイコーエプソン株式会社 | 2端子型非線形素子、その非線形素子を用いた液晶表示パネルおよび電子機器 |
US6317185B1 (en) | 1998-05-29 | 2001-11-13 | Hitachi, Ltd. | Liquid crystal display apparatus |
KR100301803B1 (ko) * | 1998-06-05 | 2001-09-22 | 김영환 | 박막트랜지스터 및 그의 제조방법 |
JP2000002886A (ja) | 1998-06-16 | 2000-01-07 | Mitsubishi Electric Corp | 液晶表示装置の製造方法 |
JP4190089B2 (ja) | 1998-06-30 | 2008-12-03 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
JP3335578B2 (ja) | 1998-06-30 | 2002-10-21 | シャープ株式会社 | 液晶表示装置およびその製造方法 |
JP3565547B2 (ja) | 1998-07-31 | 2004-09-15 | シャープ株式会社 | カラー液晶表示装置およびその製造方法 |
KR200201138Y1 (ko) | 1998-08-06 | 2000-11-01 | 김경환 | 방진필심대가 구비된 필기구 |
JP3526532B2 (ja) | 1998-08-26 | 2004-05-17 | シャープ株式会社 | 液晶表示装置 |
JP3104687B2 (ja) | 1998-08-28 | 2000-10-30 | 日本電気株式会社 | 液晶表示装置 |
US6297519B1 (en) | 1998-08-28 | 2001-10-02 | Fujitsu Limited | TFT substrate with low contact resistance and damage resistant terminals |
JP3955156B2 (ja) | 1998-08-31 | 2007-08-08 | エルジー フィリップス エルシーディー カンパニー リミテッド | 電子機器用構成基板と電子機器 |
CN1139837C (zh) | 1998-10-01 | 2004-02-25 | 三星电子株式会社 | 液晶显示器用薄膜晶体管阵列基板及其制造方法 |
JP3775071B2 (ja) | 1998-10-08 | 2006-05-17 | セイコーエプソン株式会社 | 電気光学装置用基板、電気光学装置及び電気光学装置の製造方法、ならびに電気光学装置を用いた電子機器 |
JP3406242B2 (ja) | 1998-10-15 | 2003-05-12 | シャープ株式会社 | 液晶表示装置 |
US5998230A (en) | 1998-10-22 | 1999-12-07 | Frontec Incorporated | Method for making liquid crystal display device with reduced mask steps |
EP2309482A3 (en) | 1998-10-30 | 2013-04-24 | Semiconductor Energy Laboratory Co, Ltd. | Field sequantial liquid crystal display device and driving method thereof, and head mounted display |
US6519018B1 (en) | 1998-11-03 | 2003-02-11 | International Business Machines Corporation | Vertically aligned liquid crystal displays and methods for their production |
US6617644B1 (en) | 1998-11-09 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4583529B2 (ja) | 1998-11-09 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
KR100556345B1 (ko) | 1998-11-24 | 2006-04-21 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시소자의 제조방법 |
JP4531175B2 (ja) | 1998-12-03 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7235810B1 (en) | 1998-12-03 | 2007-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
JP2000180891A (ja) | 1998-12-11 | 2000-06-30 | Hitachi Ltd | 液晶表示装置 |
TW413949B (en) * | 1998-12-12 | 2000-12-01 | Samsung Electronics Co Ltd | Thin film transistor array panels for liquid crystal displays and methods of manufacturing the same |
JP2000193984A (ja) | 1998-12-25 | 2000-07-14 | Sony Corp | 液晶ライトバルブ装置 |
US6287899B1 (en) | 1998-12-31 | 2001-09-11 | Samsung Electronics Co., Ltd. | Thin film transistor array panels for a liquid crystal display and a method for manufacturing the same |
JP4215905B2 (ja) | 1999-02-15 | 2009-01-28 | シャープ株式会社 | 液晶表示装置 |
KR100723599B1 (ko) | 1999-02-25 | 2007-06-04 | 가부시키가이샤 아드반스트 디스프레이 | 반사형 액정표시장치 및 그 제조방법과 반사형액정표시장치의 제조용 마스크 |
JP3763381B2 (ja) | 1999-03-10 | 2006-04-05 | シャープ株式会社 | 液晶表示装置の製造方法 |
JP3683463B2 (ja) * | 1999-03-11 | 2005-08-17 | シャープ株式会社 | アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ |
TWI255957B (en) | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
US6861670B1 (en) | 1999-04-01 | 2005-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having multi-layer wiring |
JP2000349301A (ja) | 1999-04-01 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
US6630977B1 (en) | 1999-05-20 | 2003-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with capacitor formed around contact hole |
US6218221B1 (en) | 1999-05-27 | 2001-04-17 | Chi Mei Optoelectronics Corp. | Thin film transistor with a multi-metal structure and a method of manufacturing the same |
JP3787041B2 (ja) | 1999-06-01 | 2006-06-21 | 日本放送協会 | 回り込みキャンセラ |
US6583065B1 (en) | 1999-08-03 | 2003-06-24 | Applied Materials Inc. | Sidewall polymer forming gas additives for etching processes |
JP2001085698A (ja) | 1999-09-16 | 2001-03-30 | Toshiba Corp | 半導体装置の製造方法 |
US6493050B1 (en) | 1999-10-26 | 2002-12-10 | International Business Machines Corporation | Wide viewing angle liquid crystal with ridge/slit pretilt, post spacer and dam structures and method for fabricating same |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4118485B2 (ja) | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7115913B2 (en) | 2002-03-27 | 2006-10-03 | Tfpd Corporation | Array substrate used for a display device and a method of making the same |
JP4488688B2 (ja) | 2002-03-27 | 2010-06-23 | 東芝モバイルディスプレイ株式会社 | 表示装置用配線基板及びその製造方法 |
JP4558752B2 (ja) | 2007-02-22 | 2010-10-06 | 三菱電機株式会社 | 液晶表示装置の製造方法 |
JP4850168B2 (ja) | 2007-12-06 | 2012-01-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2000
- 2000-03-08 JP JP2000064227A patent/JP2001257350A/ja not_active Withdrawn
- 2000-05-09 US US09/566,735 patent/US6387737B1/en not_active Expired - Lifetime
-
2001
- 2001-03-07 TW TW090105330A patent/TW503444B/zh not_active IP Right Cessation
- 2001-03-08 KR KR1020010012029A patent/KR100753785B1/ko not_active IP Right Cessation
-
2002
- 2002-05-14 US US10/144,067 patent/US6747288B2/en not_active Expired - Fee Related
-
2004
- 2004-05-25 US US10/852,260 patent/US7019329B2/en not_active Expired - Fee Related
-
2006
- 2006-03-24 US US11/387,800 patent/US7414266B2/en not_active Expired - Fee Related
-
2008
- 2008-08-14 US US12/222,687 patent/US7728334B2/en not_active Expired - Fee Related
- 2008-09-15 US US12/232,310 patent/US7652294B2/en not_active Expired - Fee Related
-
2010
- 2010-05-27 US US12/789,382 patent/US8198630B2/en not_active Expired - Fee Related
-
2012
- 2012-06-05 US US13/488,926 patent/US8586988B2/en not_active Expired - Fee Related
-
2013
- 2013-11-18 US US14/082,659 patent/US9059045B2/en not_active Expired - Fee Related
-
2015
- 2015-06-12 US US14/737,672 patent/US9368514B2/en not_active Expired - Fee Related
-
2016
- 2016-06-10 US US15/178,919 patent/US9786687B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5362660A (en) * | 1990-10-05 | 1994-11-08 | General Electric Company | Method of making a thin film transistor structure with improved source/drain contacts |
US5668379A (en) * | 1994-07-27 | 1997-09-16 | Hitachi, Ltd. | Active matrix crystal display apparatus using thin film transistor |
US5706064A (en) * | 1995-03-31 | 1998-01-06 | Kabushiki Kaisha Toshiba | LCD having an organic-inorganic hybrid glass functional layer |
US5532180A (en) * | 1995-06-02 | 1996-07-02 | Ois Optical Imaging Systems, Inc. | Method of fabricating a TFT with reduced channel length |
KR20000004404A (ko) * | 1998-06-30 | 2000-01-25 | 김영환 | Tft-lcd 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
US20090026464A1 (en) | 2009-01-29 |
US7414266B2 (en) | 2008-08-19 |
US7652294B2 (en) | 2010-01-26 |
US20080315208A1 (en) | 2008-12-25 |
US20140218652A1 (en) | 2014-08-07 |
JP2001257350A (ja) | 2001-09-21 |
US20150357352A1 (en) | 2015-12-10 |
US8198630B2 (en) | 2012-06-12 |
US20060163574A1 (en) | 2006-07-27 |
TW503444B (en) | 2002-09-21 |
US9786687B2 (en) | 2017-10-10 |
US20050059199A1 (en) | 2005-03-17 |
US20120299001A1 (en) | 2012-11-29 |
KR20010089222A (ko) | 2001-09-29 |
US9059045B2 (en) | 2015-06-16 |
US7728334B2 (en) | 2010-06-01 |
US6747288B2 (en) | 2004-06-08 |
US6387737B1 (en) | 2002-05-14 |
US20100238393A1 (en) | 2010-09-23 |
US8586988B2 (en) | 2013-11-19 |
US20020132396A1 (en) | 2002-09-19 |
US7019329B2 (en) | 2006-03-28 |
US20160358941A1 (en) | 2016-12-08 |
US9368514B2 (en) | 2016-06-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100753785B1 (ko) | 반도체 디바이스 및 그 제조 방법 | |
KR100800986B1 (ko) | 디스플레이 장치 제조 방법 | |
KR100744449B1 (ko) | 반도체 디바이스 및 그 제조 방법 | |
JP4118706B2 (ja) | 液晶表示装置の作製方法 | |
JP2008209931A (ja) | 液晶表示装置 | |
JP2007134730A (ja) | 表示装置 | |
JP4128588B2 (ja) | 液晶表示装置 | |
JP2006235638A (ja) | 液晶表示装置 | |
JP4118705B2 (ja) | 半導体装置の作製方法 | |
JP5604477B2 (ja) | 表示装置 | |
JP2012053467A (ja) | 液晶表示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120719 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20130722 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140722 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150730 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160722 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170804 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |