FR2702882B1 - Procédé de fabrication de transistors à couches minces étagés directs. - Google Patents
Procédé de fabrication de transistors à couches minces étagés directs.Info
- Publication number
- FR2702882B1 FR2702882B1 FR9303012A FR9303012A FR2702882B1 FR 2702882 B1 FR2702882 B1 FR 2702882B1 FR 9303012 A FR9303012 A FR 9303012A FR 9303012 A FR9303012 A FR 9303012A FR 2702882 B1 FR2702882 B1 FR 2702882B1
- Authority
- FR
- France
- Prior art keywords
- thin film
- film transistors
- direct step
- step thin
- manufacturing direct
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9303012A FR2702882B1 (fr) | 1993-03-16 | 1993-03-16 | Procédé de fabrication de transistors à couches minces étagés directs. |
EP94909965A EP0689721A1 (fr) | 1993-03-16 | 1994-03-15 | Procede de fabrication de transistors a couches minces etages directs |
PCT/FR1994/000278 WO1994021102A2 (fr) | 1993-03-16 | 1994-03-15 | Procede de fabrication de transistors a couches minces etages directs |
US08/522,243 US5830785A (en) | 1993-03-16 | 1994-03-15 | Direct multilevel thin-film transistors production method |
JP6520709A JPH09506738A (ja) | 1993-03-16 | 1994-03-15 | 直接多層薄膜トランジスタの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9303012A FR2702882B1 (fr) | 1993-03-16 | 1993-03-16 | Procédé de fabrication de transistors à couches minces étagés directs. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2702882A1 FR2702882A1 (fr) | 1994-09-23 |
FR2702882B1 true FR2702882B1 (fr) | 1995-07-28 |
Family
ID=9445008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9303012A Expired - Fee Related FR2702882B1 (fr) | 1993-03-16 | 1993-03-16 | Procédé de fabrication de transistors à couches minces étagés directs. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5830785A (fr) |
EP (1) | EP0689721A1 (fr) |
JP (1) | JPH09506738A (fr) |
FR (1) | FR2702882B1 (fr) |
WO (1) | WO1994021102A2 (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2719416B1 (fr) * | 1994-04-29 | 1996-07-05 | Thomson Lcd | Procédé de passivation des flancs d'un composant semiconducteur à couches minces. |
FR2732781B1 (fr) * | 1995-04-07 | 1997-06-20 | Thomson Lcd | Procede de fabrication de matrice active tft pour ecran de systeme de projection |
TW418432B (en) * | 1996-12-18 | 2001-01-11 | Nippon Electric Co | Manufacturing method of thin film transistor array |
KR100322965B1 (ko) * | 1998-03-27 | 2002-06-20 | 주식회사 현대 디스플레이 테크놀로지 | 액정표시소자의 제조방법 |
JP5408829B2 (ja) * | 1999-12-28 | 2014-02-05 | ゲットナー・ファンデーション・エルエルシー | アクティブマトリックス基板の製造方法 |
JP4118484B2 (ja) | 2000-03-06 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2001257350A (ja) | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP4700160B2 (ja) | 2000-03-13 | 2011-06-15 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP4118485B2 (ja) * | 2000-03-13 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4683688B2 (ja) | 2000-03-16 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4393662B2 (ja) | 2000-03-17 | 2010-01-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置の作製方法 |
JP4785229B2 (ja) | 2000-05-09 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US7071037B2 (en) | 2001-03-06 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7652359B2 (en) | 2002-12-27 | 2010-01-26 | Semiconductor Energy Laboratory Co., Ltd. | Article having display device |
US7566001B2 (en) | 2003-08-29 | 2009-07-28 | Semiconductor Energy Laboratory Co., Ltd. | IC card |
US8334209B2 (en) * | 2006-09-21 | 2012-12-18 | Micron Technology, Inc. | Method of reducing electron beam damage on post W-CMP wafers |
KR101435501B1 (ko) | 2008-10-03 | 2014-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62252973A (ja) * | 1986-04-25 | 1987-11-04 | Nec Corp | 順スタガ−ド型薄膜トランジスタ |
JPS6319876A (ja) * | 1986-07-11 | 1988-01-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ装置 |
JPS63172469A (ja) * | 1987-01-12 | 1988-07-16 | Fujitsu Ltd | 薄膜トランジスタ |
JPH01251016A (ja) * | 1988-03-31 | 1989-10-06 | Seiko Instr Inc | 薄膜トランジスタとその製造方法 |
JP2771820B2 (ja) * | 1988-07-08 | 1998-07-02 | 株式会社日立製作所 | アクティブマトリクスパネル及びその製造方法 |
FR2662290B1 (fr) * | 1990-05-15 | 1992-07-24 | France Telecom | Procede de realisation d'un ecran d'affichage a matrice active et a condensateurs de stockage et ecran obtenu par ce procede. |
JPH04171767A (ja) * | 1990-11-02 | 1992-06-18 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
US5372958A (en) * | 1990-11-16 | 1994-12-13 | Seiko Epson Corporation | Process for fabricating a thin film semiconductor device |
US5299289A (en) * | 1991-06-11 | 1994-03-29 | Matsushita Electric Industrial Co., Ltd. | Polymer dispersed liquid crystal panel with diffraction grating |
-
1993
- 1993-03-16 FR FR9303012A patent/FR2702882B1/fr not_active Expired - Fee Related
-
1994
- 1994-03-15 WO PCT/FR1994/000278 patent/WO1994021102A2/fr not_active Application Discontinuation
- 1994-03-15 US US08/522,243 patent/US5830785A/en not_active Expired - Lifetime
- 1994-03-15 JP JP6520709A patent/JPH09506738A/ja active Pending
- 1994-03-15 EP EP94909965A patent/EP0689721A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US5830785A (en) | 1998-11-03 |
EP0689721A1 (fr) | 1996-01-03 |
WO1994021102A2 (fr) | 1994-09-29 |
JPH09506738A (ja) | 1997-06-30 |
FR2702882A1 (fr) | 1994-09-23 |
WO1994021102A3 (fr) | 1994-11-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |