KR100590664B1 - 연마 시스템 및 그의 사용 방법 - Google Patents
연마 시스템 및 그의 사용 방법 Download PDFInfo
- Publication number
- KR100590664B1 KR100590664B1 KR1020027001010A KR20027001010A KR100590664B1 KR 100590664 B1 KR100590664 B1 KR 100590664B1 KR 1020027001010 A KR1020027001010 A KR 1020027001010A KR 20027001010 A KR20027001010 A KR 20027001010A KR 100590664 B1 KR100590664 B1 KR 100590664B1
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- polishing
- abrasive
- group
- additive
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 163
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000654 additive Substances 0.000 claims abstract description 122
- 150000001875 compounds Chemical class 0.000 claims abstract description 106
- 230000000996 additive effect Effects 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 76
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000002253 acid Substances 0.000 claims abstract description 53
- 239000000203 mixture Substances 0.000 claims abstract description 48
- 239000007788 liquid Substances 0.000 claims abstract description 40
- 239000007800 oxidant agent Substances 0.000 claims abstract description 36
- 229910019142 PO4 Inorganic materials 0.000 claims abstract description 21
- 150000007513 acids Chemical class 0.000 claims abstract description 21
- 235000021317 phosphate Nutrition 0.000 claims abstract description 21
- 150000003839 salts Chemical class 0.000 claims abstract description 19
- 150000003013 phosphoric acid derivatives Chemical class 0.000 claims abstract description 18
- 150000001412 amines Chemical class 0.000 claims abstract description 17
- 235000011180 diphosphates Nutrition 0.000 claims abstract description 15
- 150000003009 phosphonic acids Chemical class 0.000 claims abstract description 15
- 150000001408 amides Chemical class 0.000 claims abstract description 14
- 150000002466 imines Chemical class 0.000 claims abstract description 14
- 150000001414 amino alcohols Chemical class 0.000 claims abstract description 12
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims abstract description 12
- 150000002825 nitriles Chemical class 0.000 claims abstract description 11
- 125000001841 imino group Chemical group [H]N=* 0.000 claims abstract description 10
- 150000007970 thio esters Chemical class 0.000 claims abstract description 10
- 150000003566 thiocarboxylic acids Chemical class 0.000 claims abstract description 9
- 150000003568 thioethers Chemical class 0.000 claims abstract description 9
- 150000003573 thiols Chemical class 0.000 claims abstract description 9
- 238000007517 polishing process Methods 0.000 claims abstract description 6
- 150000007942 carboxylates Chemical class 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- -1 hydroxy- Chemical class 0.000 claims description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 32
- 125000005842 heteroatom Chemical group 0.000 claims description 30
- 230000001590 oxidative effect Effects 0.000 claims description 27
- 239000000377 silicon dioxide Substances 0.000 claims description 22
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 21
- 125000004122 cyclic group Chemical group 0.000 claims description 21
- 125000003118 aryl group Chemical group 0.000 claims description 19
- 238000002161 passivation Methods 0.000 claims description 19
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 16
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 14
- 229920002873 Polyethylenimine Polymers 0.000 claims description 12
- XUYJLQHKOGNDPB-UHFFFAOYSA-N phosphonoacetic acid Chemical compound OC(=O)CP(O)(O)=O XUYJLQHKOGNDPB-UHFFFAOYSA-N 0.000 claims description 12
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 11
- QQVDJLLNRSOCEL-UHFFFAOYSA-N (2-aminoethyl)phosphonic acid Chemical group [NH3+]CCP(O)([O-])=O QQVDJLLNRSOCEL-UHFFFAOYSA-N 0.000 claims description 10
- 150000003863 ammonium salts Chemical class 0.000 claims description 8
- 125000004429 atom Chemical group 0.000 claims description 8
- 125000000524 functional group Chemical group 0.000 claims description 8
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 claims description 8
- 150000003141 primary amines Chemical class 0.000 claims description 8
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229940103494 thiosalicylic acid Drugs 0.000 claims description 8
- 239000003082 abrasive agent Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 150000002978 peroxides Chemical group 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical group [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 claims description 6
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 6
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 5
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 5
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical group OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 150000003335 secondary amines Chemical class 0.000 claims description 5
- 150000003512 tertiary amines Chemical class 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 3
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 125000001399 1,2,3-triazolyl group Chemical group N1N=NC(=C1)* 0.000 claims description 2
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000510 noble metal Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 claims description 2
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims 2
- RVZNUJHAOZIKDQ-UHFFFAOYSA-N P(O)(O)=O.P(O)(O)=O.C=C Chemical compound P(O)(O)=O.P(O)(O)=O.C=C RVZNUJHAOZIKDQ-UHFFFAOYSA-N 0.000 claims 2
- 239000003125 aqueous solvent Substances 0.000 claims 2
- 239000010970 precious metal Substances 0.000 claims 2
- 239000004202 carbamide Substances 0.000 claims 1
- 125000003916 ethylene diamine group Chemical group 0.000 claims 1
- 150000003891 oxalate salts Chemical class 0.000 claims 1
- 150000003460 sulfonic acids Chemical class 0.000 claims 1
- 239000010949 copper Substances 0.000 description 84
- 239000010410 layer Substances 0.000 description 75
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 50
- 229910052802 copper Inorganic materials 0.000 description 48
- 235000012431 wafers Nutrition 0.000 description 36
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 33
- 229910052715 tantalum Inorganic materials 0.000 description 31
- 229910004298 SiO 2 Inorganic materials 0.000 description 26
- 239000010936 titanium Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 13
- 230000004888 barrier function Effects 0.000 description 12
- 150000001735 carboxylic acids Chemical class 0.000 description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 10
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000011975 tartaric acid Substances 0.000 description 9
- 235000002906 tartaric acid Nutrition 0.000 description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 7
- 229910052717 sulfur Inorganic materials 0.000 description 7
- 239000011593 sulfur Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- JCBPETKZIGVZRE-UHFFFAOYSA-N 2-aminobutan-1-ol Chemical compound CCC(N)CO JCBPETKZIGVZRE-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 6
- 239000001226 triphosphate Substances 0.000 description 6
- 235000011178 triphosphate Nutrition 0.000 description 6
- 125000002264 triphosphate group Chemical class [H]OP(=O)(O[H])OP(=O)(O[H])OP(=O)(O[H])O* 0.000 description 6
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- UYBWIEGTWASWSR-UHFFFAOYSA-N 1,3-diaminopropan-2-ol Chemical compound NCC(O)CN UYBWIEGTWASWSR-UHFFFAOYSA-N 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 4
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- OTBHHUPVCYLGQO-UHFFFAOYSA-N bis(3-aminopropyl)amine Chemical compound NCCCNCCCN OTBHHUPVCYLGQO-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 150000003949 imides Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- VEAZEPMQWHPHAG-UHFFFAOYSA-N n,n,n',n'-tetramethylbutane-1,4-diamine Chemical compound CN(C)CCCCN(C)C VEAZEPMQWHPHAG-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 4
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 3
- JCEZOHLWDIONSP-UHFFFAOYSA-N 3-[2-[2-(3-aminopropoxy)ethoxy]ethoxy]propan-1-amine Chemical compound NCCCOCCOCCOCCCN JCEZOHLWDIONSP-UHFFFAOYSA-N 0.000 description 3
- XUSNPFGLKGCWGN-UHFFFAOYSA-N 3-[4-(3-aminopropyl)piperazin-1-yl]propan-1-amine Chemical compound NCCCN1CCN(CCCN)CC1 XUSNPFGLKGCWGN-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000012736 aqueous medium Substances 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- ITZPOSYADVYECJ-UHFFFAOYSA-N n'-cyclohexylpropane-1,3-diamine Chemical compound NCCCNC1CCCCC1 ITZPOSYADVYECJ-UHFFFAOYSA-N 0.000 description 3
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Substances [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 125000001302 tertiary amino group Chemical group 0.000 description 3
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- XGDRLCRGKUCBQL-UHFFFAOYSA-N 1h-imidazole-4,5-dicarbonitrile Chemical compound N#CC=1N=CNC=1C#N XGDRLCRGKUCBQL-UHFFFAOYSA-N 0.000 description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KDXKERNSBIXSRK-UHFFFAOYSA-N Lysine Natural products NCCCCC(N)C(O)=O KDXKERNSBIXSRK-UHFFFAOYSA-N 0.000 description 2
- 239000004472 Lysine Substances 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- SUHOOTKUPISOBE-UHFFFAOYSA-N O-phosphoethanolamine Chemical compound NCCOP(O)(O)=O SUHOOTKUPISOBE-UHFFFAOYSA-N 0.000 description 2
- BHHGXPLMPWCGHP-UHFFFAOYSA-N Phenethylamine Chemical compound NCCC1=CC=CC=C1 BHHGXPLMPWCGHP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- VBIXEXWLHSRNKB-UHFFFAOYSA-N ammonium oxalate Chemical compound [NH4+].[NH4+].[O-]C(=O)C([O-])=O VBIXEXWLHSRNKB-UHFFFAOYSA-N 0.000 description 2
- 239000008365 aqueous carrier Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 235000015165 citric acid Nutrition 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- PMSVVUSIPKHUMT-UHFFFAOYSA-N cyanopyrazine Chemical compound N#CC1=CN=CC=N1 PMSVVUSIPKHUMT-UHFFFAOYSA-N 0.000 description 2
- OKGXJRGLYVRVNE-UHFFFAOYSA-N diaminomethylidenethiourea Chemical compound NC(N)=NC(N)=S OKGXJRGLYVRVNE-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- NDEMNVPZDAFUKN-UHFFFAOYSA-N guanidine;nitric acid Chemical compound NC(N)=N.O[N+]([O-])=O.O[N+]([O-])=O NDEMNVPZDAFUKN-UHFFFAOYSA-N 0.000 description 2
- BSRDNMMLQYNQQD-UHFFFAOYSA-N iminodiacetonitrile Chemical compound N#CCNCC#N BSRDNMMLQYNQQD-UHFFFAOYSA-N 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002401 polyacrylamide Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 2
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- 125000004400 (C1-C12) alkyl group Chemical group 0.000 description 1
- 125000006702 (C1-C18) alkyl group Chemical group 0.000 description 1
- 125000006686 (C1-C24) alkyl group Chemical group 0.000 description 1
- 125000000923 (C1-C30) alkyl group Chemical group 0.000 description 1
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- LSRUBRSFDNKORM-UHFFFAOYSA-N 1,1-diaminopropan-1-ol Chemical compound CCC(N)(N)O LSRUBRSFDNKORM-UHFFFAOYSA-N 0.000 description 1
- JPIGSMKDJQPHJC-UHFFFAOYSA-N 1-(2-aminoethoxy)ethanol Chemical compound CC(O)OCCN JPIGSMKDJQPHJC-UHFFFAOYSA-N 0.000 description 1
- AXFVIWBTKYFOCY-UHFFFAOYSA-N 1-n,1-n,3-n,3-n-tetramethylbutane-1,3-diamine Chemical compound CN(C)C(C)CCN(C)C AXFVIWBTKYFOCY-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- XYJLPCAKKYOLGU-UHFFFAOYSA-N 2-phosphonoethylphosphonic acid Chemical compound OP(O)(=O)CCP(O)(O)=O XYJLPCAKKYOLGU-UHFFFAOYSA-N 0.000 description 1
- RXFCIXRFAJRBSG-UHFFFAOYSA-N 3,2,3-tetramine Chemical compound NCCCNCCNCCCN RXFCIXRFAJRBSG-UHFFFAOYSA-N 0.000 description 1
- FDQQNNZKEJIHMS-UHFFFAOYSA-N 3,4,5-trimethylphenol Chemical compound CC1=CC(O)=CC(C)=C1C FDQQNNZKEJIHMS-UHFFFAOYSA-N 0.000 description 1
- PWGVOCGNHYMDLS-UHFFFAOYSA-N 3-(2-methoxyethoxy)propan-1-amine Chemical compound COCCOCCCN PWGVOCGNHYMDLS-UHFFFAOYSA-N 0.000 description 1
- YNJSNEKCXVFDKW-UHFFFAOYSA-N 3-(5-amino-1h-indol-3-yl)-2-azaniumylpropanoate Chemical compound C1=C(N)C=C2C(CC(N)C(O)=O)=CNC2=C1 YNJSNEKCXVFDKW-UHFFFAOYSA-N 0.000 description 1
- NHQDETIJWKXCTC-UHFFFAOYSA-N 3-chloroperbenzoic acid Chemical compound OOC(=O)C1=CC=CC(Cl)=C1 NHQDETIJWKXCTC-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- AZIHIQIVLANVKD-UHFFFAOYSA-N N-(phosphonomethyl)iminodiacetic acid Chemical compound OC(=O)CN(CC(O)=O)CP(O)(O)=O AZIHIQIVLANVKD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 1
- 229920013808 TRITON DF-16 Polymers 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 1
- KQNZLOUWXSAZGD-UHFFFAOYSA-N benzylperoxymethylbenzene Chemical compound C=1C=CC=CC=1COOCC1=CC=CC=C1 KQNZLOUWXSAZGD-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- WOWHHFRSBJGXCM-UHFFFAOYSA-M cetyltrimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCCCCCCCC[N+](C)(C)C WOWHHFRSBJGXCM-UHFFFAOYSA-M 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IUNMPGNGSSIWFP-UHFFFAOYSA-N dimethylaminopropylamine Chemical compound CN(C)CCCN IUNMPGNGSSIWFP-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- PANJMBIFGCKWBY-UHFFFAOYSA-N iron tricyanide Chemical class N#C[Fe](C#N)C#N PANJMBIFGCKWBY-UHFFFAOYSA-N 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- OMKZWUPRGQMQJC-UHFFFAOYSA-N n'-[3-(dimethylamino)propyl]propane-1,3-diamine Chemical compound CN(C)CCCNCCCN OMKZWUPRGQMQJC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002560 nitrile group Chemical group 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 125000002081 peroxide group Chemical group 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- NNFCIKHAZHQZJG-UHFFFAOYSA-N potassium cyanide Chemical compound [K+].N#[C-] NNFCIKHAZHQZJG-UHFFFAOYSA-N 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- MWNQXXOSWHCCOZ-UHFFFAOYSA-L sodium;oxido carbonate Chemical compound [Na+].[O-]OC([O-])=O MWNQXXOSWHCCOZ-UHFFFAOYSA-L 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
Description
시스템 | 연마 첨가제 | NH3 (M) | Cu RR (Å/분) |
비교예 | 없음 | 0.33 | 180 |
1A | 2.2 중량%의 Dequest(등록상표) 2000 | 없음 | 1657 |
1B | 2.2 중량%의 Dequest(등록상표) 2000 | 0.037 | 2527 |
1C | 2.2 중량%의 Dequest(등록상표) 2000 | 0.33 | 6448 |
시스템 | 제1 연마 첨가제 (M) | 분자 구조식 | Cu RR (Å/분) |
2A | 0.16 M 에틸렌디아민 | H2NCH2CH2NH2 | > 15000 |
2B | 0.33 M 아미노에틸에탄올아민 | H2NCH2CH2NHCH2CH2OH | 10815 |
2C | 0.33 M Lupasol(등록상표) FG | H2N-[CH2CH2NH(R)]-NH2 | 4985 |
2D | 0.33 M 2,2'-아미노에톡시에탄올 | H2NCH2CH2OCH2CH2OH | 3196 |
2E | 0.33 M 2-아미노-1-부탄올 | H3CCH2CH2CH(NH2)OH | 2091 |
시스템 | 연마 첨가제 | Cu RR (Å/분) | Ta RR (Å/분) | Cu:Ta |
대조군 | 없음 | 87 | 198 | 1:2 |
3A | 1 중량% Dequest(등록상표) 2010 | 4777 | 406 | 12:1 |
3B | 1 중량% Dequest(등록상표) 2060 | 7624 | 279 | 27:1 |
3C | 1 중량% N-포스포노메틸이미노디아세트산 | 4333 | 314 | 14:1 |
3D | 1 중량% Lupasol(등록상표) FG | 733 | 13 | 56:1 |
3E | 1 중량% 1,3-디아미노-2-프로판올 | 2668 | 50 | 53:1 |
3F | 1 중량% 2-이미노-4-티오비우레트 | 1216 | 95 | 13:1 |
3G | 1 중량% 이미노디아세트산 | 7738 | 533 | 15:1 |
3H | 0.5 중량% 디메틸글록심 | 1153 | 273 | 4:1 |
3I | 0.5 중량% 디피리딘 아민 | 3022 | 264 | 11:1 |
3J | 1 중량% 이미노디아세토니트릴 | 243 | 446 | 1:1.8 |
3K | 0.5 중량% 구아니딘 니트레이트 | 281 | 289 | 1:1 |
3L | 0.5 중량% 피라진 카르보니트릴 | 246 | 323 | 1:1.3 |
3M | 1 중량% 티오글리콜(머캅토아세트)산 | 552 | 263 | 2:1 |
3N | 1 중량% 티오디프로판산 | 652 | 250 | 2.6:1 |
3O | 1 중량% Lupasol(등록상표) SC-61B | 682 | 14 | 49:1 |
3P | 0.5 중량% Lupasol(등록상표) SKA | 480 | 15 | 32:1 |
시스템 | 연마 첨가제 | Cu RR (Å/분) | Ta RR (Å/분) | Cu:Ta |
대조군 | 없음 | 306 | 383 | 1:1.3 |
4A | 0.5 중량% K4P2O7 | 3918 | 798 | 5:1 |
4B | 0.5 중량% 포스포노아세트산 | 3658 | 40 | 91:1 |
4C | 0.5 중량% Dequest(등록상표) 2010 | 2532 | 66 | 38:1 |
4D | 0.5 중량% Dequest(등록상표) 2000 | 5245 | 337 | 16:1 |
4E | 1 중량% Lupasol(등록상표) FG | 5784 | 9 | 643:1 |
4F | 1 중량% Lupasol(등록상표) P | 4297 | 5 | 860:1 |
시스템 | 연마 첨가제 | 중단 화합물 | Cu RR (Å/분) | Ta RR (Å/분) | SiO2 RR (Å/분) | Cu:Ta |
대조군 | 없음 | 없음 | 87 | 198 | - | 1:2 |
비교예 1 | 1.25 중량% 타르타르산 | 없음 | 3615 | 133 | 53 | 27:1 |
비교예 2 | 1 중량% Dequest(등록상표) 2010 | 없음 | 4777 | 406 | - | 12:1 |
5A | 1.25 중량% 타르타르산 | 0.06 중량% 폴리에틸렌이민 | 2375 | 19 | 12 | 125:1 |
5B | 0.5 중량% Dequest(등록상표) 2010 | 0.1 중량% 디시아노이미다졸 | 3163 | 175 | 54 | 18:1 |
5C | 0.75 중량% Dequest(등록상표) 2000 | 0.12 중량% 폴리에틸렌이민 | 3265 | 28 | 16 | 117:1 |
5D | 0.8 중량% Dequest(등록상표) 2010 | 0.12 중량% 폴리에틸렌이민 | 2949 | 35 | 26 | 84:1 |
5E | 0.75 중량% Dequest(등록상표) 2000 | 0.5 중량% 폴리아크릴아미드 | 6381 | 43 | 28 | 148:1 |
5F | 2.5 중량% Dequest(등록상표) 2000 | 0.5 중량% 1,4-비스(3-아미노프로필)피페라진 | 3860 | 109 | 5.5 | 35:1 |
5G | 2.5 중량% Dequest(등록상표) 2000 | 0.5 중량% Varisoft(등록상표) 300 | 2260 | 97.6 | 3.6 | 23:1 |
시스템 | 연마 첨가제 | 중단 화합물 | Cu RR (Å/분) | Ta RR (Å/분) | SiO2 RR (Å/분) | Cu:Ta |
대조군 | 없음 | 없음 | 306 | 383 | 299 | 1:1.3 |
6A | 0.8 중량% Dequest(등록상표) 2010 | 0.12 중량% Lupasol(등록상표) SKA | 1789 | 13 | 5 | 138:1 |
6B | 0.75 중량% Dequest(등록상표) 2000 | 0.12 중량% Lupasol(등록상표) SKA | 1733 | 9 | 20 | 193:1 |
6C | 0.75 중량% Dequest(등록상표) 2060 | 0.12 중량% Lupasol(등록상표) SKA | 2132 | 7 | 12 | 305:1 |
시스템 | 중단 화합물 | 상대적인 제거 속도 Ta | 상대적인 제거 속도 SiO2 |
대조군 | 없음 | 1 | 1 |
7A | 0.2 중량% 이소포론 디아민 | 0.17 | - |
7B | 0.2 중량% 헥사메틸렌디아민 | 0.24 | 0.27 |
7C | 0.2 중량% N-시클로헥실-1,3-프로판 디아민 | 0.12 | 0.11 |
7D | 0.2 중량% N-(3-아미노프로필)-1,3-프로판 디아민 | 0.17 | 0.03 |
7E | 0.2 중량% 테트라에틸렌펜타아민 | 0.21 | 0.13 |
7F | 0.2 중량% N,N,N',N'-테트라메틸-1,4-부탄디아민 | - | 0.37 |
7G | 0.5 중량% 프로필아민 | 0.17 | - |
7H | 0.2 중량% 2-(2-아미노에톡시)에탄올 | 0.71 | - |
7I | 3.0 중량% 2-아미노-1-부탄올 | 0.04 | 0.21 |
7J | 0.2 중량% 4,7,10-트리옥사-1,13-트리데칸디아민 | 0.28 | 0.22 |
7K | 0.2 중량% 라이신 | 0.35 | 1.1 |
7L | 0.2 중량% 폴리[비스(2-클로로에테르)-알트-1,3-비스(3-디메틸아미노)프로필] | - | 0.33 |
시스템 | 연마 첨가제 | 중단 화합물 | Cu:Ta | Cu 디싱 (10 ㎛/50 ㎛ | SiO2 침식 (2 ㎛/4 ㎛ 어레이) |
8A | 1.25 중량% 타르타르산 | 없음 | 81:1 | 952 Å/1868 Å | 896 Å |
8B | 1.25 중량% 타르타르산 | 0.06 중량% Lupasol(등록상표) SKA | 220:1 | 840 Å/1552 Å | 714 Å |
Claims (87)
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- (i) 액체 담체, (ii) 1종 이상의 산화제, (iii) 시스템이 기판의 하나 이상의 층을 연마하는 속도를 증가시키는 1종 이상의 연마 첨가제 (여기서, 상기 연마 첨가제는 피로인산염, 축합 인산염, 디포스폰산, 트리포스폰산, 폴리포스폰산, 포스포노아세트산 및 그의 염, 아미노에틸에탄올아민, 폴리에틸렌이민, 아미노 알코올, 아미드, 이민, 이미노산, 니트릴, 니트로, 티올, 티오에스테르, 티오에테르, 카르보티올산, 카르보티온산, 티오카르복실산, 티오살리실산 및 이들의 혼합물로 이루어진 군 중에서 선택된다), 및 (iv) 1종 이상의 패시베이션 막 형성제, 및 (v) 연마 패드 및(또는) 연마제를 포함하는, 제1 금속층 및 제2층을 포함하는 다층 기판의 하나 이상의 층을 연마하기 위한 시스템.
- 제29항에 있어서, 상기 액체 담체가 비수성 용매인 시스템.
- 제29항에 있어서, 상기 액체 담체가 물인 시스템.
- 제31항에 있어서, 상기 액체 담체 중에 현탁된 연마제를 포함하는 시스템.
- 제31항에 있어서, 연마 패드와 연마제를 모두 포함하고, 상기 연마제가 연마 패드 상에 고정된 시스템.
- 제31항에 있어서, 시스템 중에 연마제가 존재하지 않고, 상기 연마 패드가 비연마제 패드인 시스템.
- 제31항에 있어서, 상기 1종 이상의 산화제가 과산화물이고, 상기 1종 이상의 패시베이션 막 형성제가 하나 이상의 5-6원 복소환식 질소 함유 고리를 포함하는 것인 시스템.
- 제31항에 있어서, 상기 1종 이상의 연마 첨가제가 에틸렌 디-포스폰산, 1-히드록시에틸리덴-1,1-디-포스폰산 및 그의 혼합물로 이루어진 군으로부터 선택되는 것인 시스템.
- 제36항에 있어서, 상기 1종 이상의 산화제가 퍼옥시드이고, 상기 1종 이상의 패시베이션 막 형성제가 하나 이상의 5-6원 복소환식 질소 함유 고리를 포함하는 것인 시스템.
- 제31항에 있어서, 상기 1종 이상의 연마 첨가제가 (a) 피로인산염, 축합 인산염, 포스폰산 및 그의 염로 이루어진 군으로부터 선택되는 화합물 및 (b) 아민, 아미노알콜, 아미드, 이민, 이미노산, 니트릴 및 니트로로 이루어진 군으로부터 선택된 화합물 둘 다인 시스템.
- 제31항에 있어서, 상기 1종 이상의 연마 첨가제가 (a) 아민, 아미노 알콜, 아미드, 이민, 이미노산, 니트릴 및 니트로로 이루어진 군으로부터 선택된 화합물 및 (b) 티올, 티오에스테르, 및 티오에테르, 카르보티올산, 카르보티온산, 티오카르복실산 및 티오살리실산으로 이루어진 군으로부터 선택된 화합물 둘 다인 시스템.
- 제38항에 있어서, 상기 1종 이상의 연마 첨가제가 2-아미노에틸 포스폰산, 아미노(트리메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산), 헥사메틸렌디아민테트라(메틸렌포스폰산) 및 그의 혼합물로 이루어진 군으로부터 선택되는 것인 시스템.
- 제31항에 있어서, 암모니아원을 추가로 포함하는 시스템.
- 제41항에 있어서, (i) 아미노트리(메틸렌포스폰산) 및 (ii) 암모니아 또는 암모늄염을 포함하는 시스템.
- 제31항에 있어서, 1종 이상의 중단 화합물을 추가로 포함하는 시스템.
- 제31항에 있어서, 기판과 결합된 하나 이상의 층의 연마속도를 감소시키는 1종 이상의 중합성 화합물을 추가로 포함하는 시스템.
- 제31항에 있어서, 상기 1종 이상의 패시베이션 막 형성제가 1,2,3-트리아졸, 1,2,4-트리아졸, 벤조트리아졸, 벤즈이미다졸, 벤조티아졸 및 히드록시-, 아미노-, 이미노-, 카르복시-, 머캅토-, 니트로-, 우레아, 티오우레아- 또는 알킬- 치환된 그의 유도체로 이루어진 군으로부터 선택되는 것인 시스템.
- 제31항에 있어서, 상기 연마제가 금속 산화물 연마제인 시스템.
- 제46항에 있어서, 상기 연마제가 알루미나, 세리아, 게르마니아, 실리카, 티타니아, 지르코니아 및 이들의 동시형성 제품 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것인 시스템.
- 제47항에 있어서, 상기 연마제가 알루미나인 시스템.
- 제29항에 있어서, 상기 1종 이상의 연마 첨가제가 이미노디아세트산인 시스템.
- 제49항에 있어서, 1종 이상의 중단 화합물을 추가로 포함하는 시스템.
- 제49항에 있어서, 기판과 결합된 하나 이상의 층의 연마 속도를 감소시키는 1종 이상의 중합성 화합물을 추가로 포함하는 시스템.
- 제43항에 있어서, 암모니아 또는 암모늄염을 추가로 포함하는 시스템.
- (i) (a) 액체 담체; (b) 1종 이상의 산화제; (c) 시스템이 기판의 하나 이상의 층을 연마하는 속도를 증가시키는 1종 이상의 연마 첨가제 (여기서, 상기 연마 첨가제는 피로인산염, 축합 인산염, 포스폰산 및 그의 염, 아민, 아미노알콜, 아미드, 이민, 이미노산, 니트릴, 니트로, 티올, 티오에스테르, 티오에테르, 카르보티올산, 카르보티온산, 티오카르복실산, 티오살리실산 및 이들의 혼합물로 이루어진 군 중에서 선택된다), 및 (d) 연마 패드 및(또는) 연마제를 포함하는 연마 시스템과 기판의 표면을 접촉시키는 단계,(ii) 그것으로 기판의 적어도 일부를 연마하는 단계를포함하는 기판의 연마방법.
- 제53항에 있어서, 상기 액체 담체가 비수성 용매인 방법.
- 제53항에 있어서, 상기 액체 담체가 물인 방법.
- 제55항에 있어서, 상기 시스템이 액체 담체 중에 현탁된 연마제를 포함하는 것인 방법.
- 제55항에 있어서, 상기 시스템이 연마제를 포함하고, 상기 연마제가 연마 패드 상에 고정된 것인 방법.
- 제55항에 있어서, 상기 시스템 중에 연마제가 존재하지 않고, 상기 연마 패드가 비연마제 패드인 방법.
- 제55항에 있어서, 상기 1종 이상의 연마 첨가제가 디-포스폰산, 트리-포스폰산, 폴리-포스폰산, 포스포노아세트산 및 그의 혼합물로 이루어진 군으로부터 선택되는 것인 방법.
- 제59항에 있어서, 상기 1종 이상의 산화제가 과산화물이고, 상기 시스템이 하나 이상의 5-6원 복소환식 질소 함유 고리를 포함하는 1종 이상의 패시베이션 막 형성제를 추가로 포함하는 것인 방법.
- 제59항에 있어서, 상기 1종 이상의 연마 첨가제가 에틸렌 디-포스폰산, 1-히드록시에틸리덴-1,1-디-포스폰산 및 그의 혼합물로 이루어진 군으로부터 선택되는 것인 방법.
- 제55항에 있어서, 상기 1종 이상의 연마 첨가제가 1급 아민, 2급 아민, 3급 아민, 히드록실화 아민 및 그의 혼합물로 이루어진 군으로부터 선택되는 것인 방법.
- 제62항에 있어서, 상기 1종 이상의 연마 첨가제가 구조 XY-NCR1R2CR3R4N-X'Y' {여기서, X, Y, X', Y', R1, R2, R3 및 R4는 수소 (H) 원자, 헤테로원자 함유 관능기, C1-C20 알킬기, 헤테로원자 함유 C1-C20 알킬기, 시클릭기, 헤테로원자 함유 시클릭기, 방향족기, 헤테로원자 함유 방향족기 및 이들의 조합으로 이루어진 군 중에서 선택된다}를 포함하는 것인 방법.
- 제63항에 있어서, 상기 1종 이상의 연마 첨가제가 구조 XY-NCR1R2CR3R4N-X'Y' {여기서 X 및 X'는 H 원자이고, Y, Y', R1, R2, R3 및 R4는 수소 (H) 원자, 헤테로원자 함유 관능기, 알킬기, 헤테로원자 함유 알킬기, 시클릭기, 헤테로원자 함유 시클릭기, 방향족기, 헤테로원자 함유 방향족기 및 이들의 조합으로 이루어진 군 중에서 선택된다}를 포함하는 것인 방법.
- 제64항에 있어서, 상기 1종 이상의 연마 첨가제가 구조 XY-NCR1R2CR3R4N-X'Y' {여기서 X, Y, X' 및 Y'는 H 원자이고, R1, R2, R3 및 R4는 수소 (H) 원자, 헤테로원자 함유 관능기, 알킬기, 헤테로원자 함유 알킬기, 시클릭기, 헤테로원자 함유 시클릭기, 방향족기, 헤테로원자 함유 방향족기 및 이들의 조합으로 이루어진 군 중에서 선택된다}를 포함하는 것인 방법.
- 제63항에 있어서, 상기 1종 이상의 연마 첨가제가 아미노에틸에탄올아민, 폴리에틸렌이민 및 이들의 혼합물로 이루어진 군 중에서 선택되는 것인 방법.
- 제64항에 있어서, 상기 1종 이상의 연마 첨가제가 에틸렌디아민인 방법.
- 제65항에 있어서, 상기 1종 이상의 연마 첨가제가 과산화물이고, 상기 시스템이 하나 이상의 5-6원 복소환식 질소 함유 고리를 포함하는 1종 이상의 패시베이션 막 형성제를 추가로 포함하는 것인 방법.
- 제55항에 있어서, 상기 1종 이상의 연마 첨가제가 (a) 피로인산염, 축합 인산염, 포스폰산 및 그의 염으로 이루어진 군으로부터 선택된 화합물 및 (b) 아민, 아미노 알코올, 아미드, 이민, 이미노산, 니트릴 및 니트로로 이루어진 군 중에서 선택된 화합물 둘 다인 방법.
- 제55항에 있어서, 상기 1종 이상의 연마 첨가제가 (a) 아민, 아미노 알코올, 아미드, 이민, 이미노산, 니트릴 및 니트로로 이루어진 군 중에서 선택된 화합물 및 (b) 티올, 티오에스테르, 및 티오에테르, 카르보티올산, 카르보티온산, 티오카르복실산 및 티오살리실산으로 이루어진 군으로부터 선택된 화합물 둘 다인 방법.
- 제69항에 있어서, 상기 1종 이상의 연마 첨가제가 2-아미노에틸 포스폰산, 아미노(트리메틸렌포스폰산), 디에틸렌트리아민펜타(메틸렌포스폰산), 헥사메틸렌디아민(메틸렌포스폰산) 및 그의 혼합물로 이루어진 군으로부터 선택되는 것인 방법.
- 제55항에 있어서, 상기 시스템이 암모니아원을 추가로 포함하는 것인 방법.
- 제72항에 있어서, 상기 시스템이 (i) 아미노트리(메틸렌포스폰산) 및 (ii) 암모니아 또는 암모늄 염을 포함하는 것인 방법.
- 제55항에 있어서, 상기 시스템이 1종 이상의 중단 화합물을 추가로 포함하는 것인 방법.
- 제55항에 있어서, 상기 연마 첨가제가 이미노디아세트산인 방법.
- 제75항에 있어서, 상기 시스템이 1종 이상의 중단 화합물을 추가로 포함하는 것인 방법.
- 제75항에 있어서, 상기 시스템이 기판과 결합된 하나 이상의 층의 연마 속도를 감소시키는 1종 이상의 중합성 화합물을 추가로 포함하는 것인 방법.
- 제75항에 있어서, 상기 시스템이 암모니아 또는 암모늄 염을 추가로 포함하는 것인 방법.
- 제55항에 있어서, 상기 시스템이 기판과 결합된 하나 이상의 층의 연마 속도를 감소시키는 1종 이상의 중합성 화합물을 추가로 포함하는 것인 방법.
- 제55항에 있어서, 상기 시스템이 1종 이상의 패시베이션 막 형성제를 추가로 포함하는 것인 방법.
- 제55항에 있어서, 상기 연마제가 산화 금속 연마제인 방법.
- 제81항에 있어서, 상기 연마제가 알루미나, 세리아, 게르마니아, 실리카, 티타니아, 지르코니아 및 이들의 동시형성 제품 및 이들의 혼합물로 이루어진 군으로부터 선택되는 것인 방법.
- 제82항에 있어서, 상기 연마제가 알루미나인 방법.
- (i) (a) 액체 담체; (b) 1종 이상의 산화제; (c) 시스템이 기판의 귀금속층을 연마하는 속도를 증가시키는 1종 이상의 연마 첨가제 (여기서, 상기 연마 첨가제는 카르복실산염 및 그의 산, 히드록실레이트 및 그의 산, 카르보닐레이트 및 그의 산, 피로인산염, 축합 인산염, 포스폰산 및 그의 염, 아민, 아미노알콜, 아미드, 이민, 이미노산 및 그의 염, 니트릴, 니트로, 티올, 티오에스테르, 티오에테르, 카르보티올산 및 그의 염, 카르보티온산 및 그의 염, 티오카르복실산 및 그의 염, 술폰산 및 그의 염, 티오살리실산 및 그의 염 및 이들의 혼합물로 이루어진 군 중에서 선택된다), 및 (d) 연마 패드 및(또는) 연마제를 포함하는 화학-기계적 연마 시스템과 기판의 표면을 접촉시키는 단계,(ii) 기판을 연마하기 위해 기판의 적어도 일부를 제거하는 단계를를 포함하는, 제1 귀금속층 및 제2층을 포함하는 다층 기판의 하나 이상의 층의 연마 방법.
- 제84항에 있어서, 상기 산화제가 과화합물인 방법.
- 제84항에 있어서, 상기 귀금속이 백금, 이리듐, 루테늄인 방법.
- 제84항에 있어서, 상기 연마 첨가제가 옥살레이트염, 피로인산염, 아미노트리(메틸렌포스폰산), 1-디포스폰산, 디에틸렌트리아민펜타(메틸렌포스폰산), 아미노산 및 티오디아세트산으로 이루어진 군으로부터 선택되는 것인 방법.
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KR1020027001010A KR100590664B1 (ko) | 1999-08-13 | 2000-08-10 | 연마 시스템 및 그의 사용 방법 |
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KR (2) | KR100590666B1 (ko) |
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