ATE360051T1 - Poliersystem und verfahren zu seiner verwendung - Google Patents

Poliersystem und verfahren zu seiner verwendung

Info

Publication number
ATE360051T1
ATE360051T1 AT00953960T AT00953960T ATE360051T1 AT E360051 T1 ATE360051 T1 AT E360051T1 AT 00953960 T AT00953960 T AT 00953960T AT 00953960 T AT00953960 T AT 00953960T AT E360051 T1 ATE360051 T1 AT E360051T1
Authority
AT
Austria
Prior art keywords
polishing
substrate
acids
layer
metal layer
Prior art date
Application number
AT00953960T
Other languages
English (en)
Inventor
Shumin Wang
Kaufman Vlasta Brusic
Steven K Grumbine
Renjie Zhou
Isaac K Cherian
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Application granted granted Critical
Publication of ATE360051T1 publication Critical patent/ATE360051T1/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
AT00953960T 1999-08-13 2000-08-10 Poliersystem und verfahren zu seiner verwendung ATE360051T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14881399P 1999-08-13 1999-08-13

Publications (1)

Publication Number Publication Date
ATE360051T1 true ATE360051T1 (de) 2007-05-15

Family

ID=22527505

Family Applications (2)

Application Number Title Priority Date Filing Date
AT00953960T ATE360051T1 (de) 1999-08-13 2000-08-10 Poliersystem und verfahren zu seiner verwendung
AT00952726T ATE292167T1 (de) 1999-08-13 2000-08-10 Poliersystem mit stopmittel und verfahren zu seiner verwendung

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT00952726T ATE292167T1 (de) 1999-08-13 2000-08-10 Poliersystem mit stopmittel und verfahren zu seiner verwendung

Country Status (14)

Country Link
US (1) US6852632B2 (de)
EP (3) EP1218465B1 (de)
JP (5) JP4391715B2 (de)
KR (2) KR100590666B1 (de)
CN (2) CN100368496C (de)
AT (2) ATE360051T1 (de)
AU (2) AU6632100A (de)
CA (2) CA2378790A1 (de)
DE (2) DE60019142T2 (de)
HK (2) HK1046422A1 (de)
IL (2) IL147234A0 (de)
MY (2) MY139997A (de)
TW (2) TW500784B (de)
WO (2) WO2001012741A1 (de)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503418B2 (en) * 1999-11-04 2003-01-07 Advanced Micro Devices, Inc. Ta barrier slurry containing an organic additive
US6976905B1 (en) * 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
US20020098784A1 (en) * 2001-01-19 2002-07-25 Saket Chadda Abrasive free polishing in copper damascene applications
JP4231632B2 (ja) * 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
KR100535074B1 (ko) * 2001-06-26 2005-12-07 주식회사 하이닉스반도체 루테늄의 화학 기계적 연마용 슬러리 및 이를 이용한연마공정
US20030003747A1 (en) * 2001-06-29 2003-01-02 Jae Hong Kim Chemical mechanical polishing slurry for ruthenium titanium nitride and polishing process using the same
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US20050028449A1 (en) * 2001-09-03 2005-02-10 Norihiko Miyata Polishing composition
US6805812B2 (en) * 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
JP4095798B2 (ja) * 2001-12-20 2008-06-04 株式会社フジミインコーポレーテッド 研磨用組成物
US7004819B2 (en) 2002-01-18 2006-02-28 Cabot Microelectronics Corporation CMP systems and methods utilizing amine-containing polymers
US7097541B2 (en) * 2002-01-22 2006-08-29 Cabot Microelectronics Corporation CMP method for noble metals
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6755721B2 (en) 2002-02-22 2004-06-29 Saint-Gobain Ceramics And Plastics, Inc. Chemical mechanical polishing of nickel phosphorous alloys
WO2003083920A1 (en) * 2002-03-25 2003-10-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Tantalum barrier removal solution
JP2004006628A (ja) * 2002-03-27 2004-01-08 Hitachi Ltd 半導体装置の製造方法
US7087187B2 (en) 2002-06-06 2006-08-08 Grumbine Steven K Meta oxide coated carbon black for CMP
KR100474537B1 (ko) * 2002-07-16 2005-03-10 주식회사 하이닉스반도체 산화막용 cmp 슬러리 조성물 및 이를 이용한 반도체소자의 제조 방법
US6911393B2 (en) 2002-12-02 2005-06-28 Arkema Inc. Composition and method for copper chemical mechanical planarization
JP2004273547A (ja) * 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤
US7306748B2 (en) * 2003-04-25 2007-12-11 Saint-Gobain Ceramics & Plastics, Inc. Methods for machining ceramics
US8025808B2 (en) 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
US7160807B2 (en) * 2003-06-30 2007-01-09 Cabot Microelectronics Corporation CMP of noble metals
KR100499642B1 (ko) * 2003-09-05 2005-07-05 주식회사 하이닉스반도체 반도체 소자의 소자 분리막 제조 방법
US7241725B2 (en) 2003-09-25 2007-07-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Barrier polishing fluid
US7300480B2 (en) 2003-09-25 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High-rate barrier polishing composition
JP4608196B2 (ja) * 2003-09-30 2011-01-05 株式会社フジミインコーポレーテッド 研磨用組成物
TWI347969B (en) * 2003-09-30 2011-09-01 Fujimi Inc Polishing composition
US7022255B2 (en) 2003-10-10 2006-04-04 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
US7247566B2 (en) * 2003-10-23 2007-07-24 Dupont Air Products Nanomaterials Llc CMP method for copper, tungsten, titanium, polysilicon, and other substrates using organosulfonic acids as oxidizers
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US7255810B2 (en) * 2004-01-09 2007-08-14 Cabot Microelectronics Corporation Polishing system comprising a highly branched polymer
JP4814502B2 (ja) * 2004-09-09 2011-11-16 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
US7988878B2 (en) * 2004-09-29 2011-08-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Selective barrier slurry for chemical mechanical polishing
JP4836441B2 (ja) * 2004-11-30 2011-12-14 花王株式会社 研磨液組成物
ATE417700T1 (de) * 2005-04-08 2009-01-15 Ohara Kk Trägermaterial und polierverfahren dafür
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
US7678702B2 (en) * 2005-08-31 2010-03-16 Air Products And Chemicals, Inc. CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use
US8353740B2 (en) 2005-09-09 2013-01-15 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US7708904B2 (en) 2005-09-09 2010-05-04 Saint-Gobain Ceramics & Plastics, Inc. Conductive hydrocarbon fluid
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
US7955519B2 (en) * 2005-09-30 2011-06-07 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US7265055B2 (en) 2005-10-26 2007-09-04 Cabot Microelectronics Corporation CMP of copper/ruthenium substrates
CN1955212B (zh) * 2005-10-28 2011-08-03 安集微电子(上海)有限公司 用于阻挡层的化学机械抛光浆料
FR2896165B1 (fr) * 2006-01-13 2012-08-03 Centre Nat Rech Scient Preparation d'un substrat inorganique presentant des proprietes anti-microbiennes
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
JP2007266075A (ja) * 2006-03-27 2007-10-11 Fujifilm Corp 金属用研磨液
JP2007266077A (ja) * 2006-03-27 2007-10-11 Fujifilm Corp 金属用研磨液
CN102633288A (zh) * 2006-04-21 2012-08-15 日立化成工业株式会社 氧化物粒子的制造方法、浆料、研磨剂和基板的研磨方法
US7585340B2 (en) * 2006-04-27 2009-09-08 Cabot Microelectronics Corporation Polishing composition containing polyether amine
EP2027970A4 (de) * 2006-05-31 2009-11-18 Asahi Glass Co Ltd Polierzusammensetzung und polierverfahren
CN101130665A (zh) * 2006-08-25 2008-02-27 安集微电子(上海)有限公司 用于抛光低介电材料的抛光液
US7776230B2 (en) * 2006-08-30 2010-08-17 Cabot Microelectronics Corporation CMP system utilizing halogen adduct
CN101153205A (zh) * 2006-09-29 2008-04-02 安集微电子(上海)有限公司 用于抛光低介电材料的化学机械抛光液
US20080105652A1 (en) * 2006-11-02 2008-05-08 Cabot Microelectronics Corporation CMP of copper/ruthenium/tantalum substrates
JP5336387B2 (ja) 2006-12-20 2013-11-06 サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド 無機、非金属ワークピースを機械加工するための方法
US20080149884A1 (en) 2006-12-21 2008-06-26 Junaid Ahmed Siddiqui Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
JP2008177373A (ja) * 2007-01-18 2008-07-31 Nitta Haas Inc 研磨組成物
WO2008150038A1 (en) * 2007-06-08 2008-12-11 Techno Semichem Co., Ltd. Cmp slurry composition for copper damascene process
US7915071B2 (en) * 2007-08-30 2011-03-29 Dupont Air Products Nanomaterials, Llc Method for chemical mechanical planarization of chalcogenide materials
US7803711B2 (en) * 2007-09-18 2010-09-28 Cabot Microelectronics Corporation Low pH barrier slurry based on titanium dioxide
US20090090696A1 (en) * 2007-10-08 2009-04-09 Cabot Microelectronics Corporation Slurries for polishing oxide and nitride with high removal rates
WO2009054370A1 (ja) * 2007-10-23 2009-04-30 Hitachi Chemical Company, Ltd. Cmp研磨液及びこれを用いた基板の研磨方法
ES2399477T3 (es) 2007-12-13 2013-04-01 Akzo Nobel N.V. Disoluciones de peróxido de hidrógeno estabilizadas
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
KR20100123757A (ko) * 2008-03-07 2010-11-24 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 비-선택적 산화물 에칭용 습윤 세정 조성물 및 사용 방법
JP2008300858A (ja) * 2008-07-15 2008-12-11 Fujifilm Corp 金属用研磨液及び研磨方法
CN101333419B (zh) * 2008-08-05 2011-06-29 清华大学 一种集成电路铜布线的无磨粒化学机械抛光液
US20100081279A1 (en) * 2008-09-30 2010-04-01 Dupont Air Products Nanomaterials Llc Method for Forming Through-base Wafer Vias in Fabrication of Stacked Devices
US8506831B2 (en) 2008-12-23 2013-08-13 Air Products And Chemicals, Inc. Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate
US9330703B2 (en) * 2009-06-04 2016-05-03 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous memory disks
US8025813B2 (en) 2009-11-12 2011-09-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
ES2498770T3 (es) * 2009-12-03 2014-09-25 Basf Se Pigmentos de protección contra la corrosión con potencial zeta positivo
US8916473B2 (en) 2009-12-14 2014-12-23 Air Products And Chemicals, Inc. Method for forming through-base wafer vias for fabrication of stacked devices
CN102101978B (zh) * 2009-12-18 2014-07-23 安集微电子(上海)有限公司 一种化学机械抛光液
CN102101976A (zh) * 2009-12-18 2011-06-22 安集微电子(上海)有限公司 一种化学机械抛光液
JP5657247B2 (ja) * 2009-12-25 2015-01-21 花王株式会社 研磨液組成物
JP6101421B2 (ja) * 2010-08-16 2017-03-22 インテグリス・インコーポレーテッド 銅または銅合金用エッチング液
TWI568541B (zh) * 2010-12-22 2017-02-01 Jsr Corp Chemical mechanical grinding method
US8524540B2 (en) * 2011-02-01 2013-09-03 Nilesh Kapadia Adhesion promoting composition for metal leadframes
US20120203765A1 (en) * 2011-02-04 2012-08-09 Microsoft Corporation Online catalog with integrated content
CN102181232B (zh) * 2011-03-17 2013-12-11 清华大学 Ulsi多层铜布线铜的低下压力化学机械抛光的组合物
WO2012133591A1 (ja) * 2011-03-30 2012-10-04 株式会社 フジミインコーポレーテッド 研磨用組成物並びにそれを用いた研磨方法及び半導体デバイスの製造方法
WO2012147312A1 (ja) * 2011-04-25 2012-11-01 バンドー化学株式会社 研磨フィルム
CN105086836A (zh) * 2015-08-19 2015-11-25 三峡大学 一种氧化铈抛光液及其制备方法
WO2017057156A1 (ja) * 2015-09-30 2017-04-06 株式会社フジミインコーポレーテッド 研磨方法
KR102543680B1 (ko) * 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR102544644B1 (ko) * 2015-12-24 2023-06-19 솔브레인 주식회사 유기막 연마용 슬러리 조성물 및 이를 이용한 반도체 기판 연마 방법
JP6721704B2 (ja) * 2016-03-04 2020-07-15 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド 半導体基材をケミカルメカニカル研磨する方法
WO2018055985A1 (ja) * 2016-09-23 2018-03-29 株式会社フジミインコーポレーテッド 研磨用組成物、ならびにこれを用いた研磨方法および半導体基板の製造方法
CN110997856B (zh) * 2017-08-09 2021-10-29 昭和电工材料株式会社 研磨液和研磨方法
US20200102476A1 (en) * 2018-09-28 2020-04-02 Versum Materials Us, Llc Barrier Slurry Removal Rate Improvement
JP7379789B2 (ja) 2020-03-02 2023-11-15 株式会社タイテム コロイダルシリカスラリー

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE400575B (sv) 1974-12-13 1978-04-03 Nordnero Ab Bad for betning av koppar och dess legeringar
US4404074A (en) 1982-05-27 1983-09-13 Occidental Chemical Corporation Electrolytic stripping bath and process
US4452643A (en) 1983-01-12 1984-06-05 Halliburton Company Method of removing copper and copper oxide from a ferrous metal surface
JPS6396599A (ja) 1986-10-14 1988-04-27 三菱重工業株式会社 金属ルテニウムの溶解法
DE3735158A1 (de) * 1987-10-16 1989-05-03 Wacker Chemitronic Verfahren zum schleierfreien polieren von halbleiterscheiben
JPH01270512A (ja) 1988-04-21 1989-10-27 Tanaka Kikinzoku Kogyo Kk 貴金属の溶解方法
US4875973A (en) 1988-07-27 1989-10-24 E. I. Du Pont De Nemours And Company Hydrogen peroxide compositions containing a substituted aminobenzaldehyde
JP2800020B2 (ja) 1989-04-18 1998-09-21 東海電化工業株式会社 錫又は錫合金の化学溶解剤
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
JPH03202269A (ja) * 1989-10-12 1991-09-04 Nalco Chem Co 低ナトリウム低金属シリカ研磨スラリー
JPH03232980A (ja) 1990-02-06 1991-10-16 Shinko Electric Ind Co Ltd 銅もしくは銅合金上の銀剥離液
JPH0781132B2 (ja) 1990-08-29 1995-08-30 株式会社フジミインコーポレーテッド 研磨剤組成物
US5981454A (en) * 1993-06-21 1999-11-09 Ekc Technology, Inc. Post clean treatment composition comprising an organic acid and hydroxylamine
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
JP3481379B2 (ja) 1995-08-23 2003-12-22 メック株式会社 電気めっき法
JPH0982668A (ja) * 1995-09-20 1997-03-28 Sony Corp 研磨用スラリー及びこの研磨用スラリーを用いる研磨方法
DE69611653T2 (de) * 1995-11-10 2001-05-03 Tokuyama Corp., Tokuya Poliersuspensionen und Verfahren zu ihrer Herstellung
JPH1015811A (ja) * 1996-06-28 1998-01-20 Kao Corp 加工用助剤組成物及びこれを用いた表面加工方法
US6039891A (en) * 1996-09-24 2000-03-21 Cabot Corporation Multi-oxidizer precursor for chemical mechanical polishing
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5972792A (en) * 1996-10-18 1999-10-26 Micron Technology, Inc. Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad
US5773364A (en) 1996-10-21 1998-06-30 Motorola, Inc. Method for using ammonium salt slurries for chemical mechanical polishing (CMP)
SG68005A1 (en) * 1996-12-02 1999-10-19 Fujimi Inc Polishing composition
JPH10172936A (ja) * 1996-12-05 1998-06-26 Fujimi Inkooporeetetsudo:Kk 研磨用組成物
US6309560B1 (en) * 1996-12-09 2001-10-30 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US5954997A (en) 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
CN1165975C (zh) * 1997-04-30 2004-09-08 美国3M公司 对半导体晶片表面进行平整的方法
US5855633A (en) 1997-06-06 1999-01-05 Lockheed Martin Energy Systems, Inc. Lapping slurry
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
JP3082722B2 (ja) * 1997-10-07 2000-08-28 日本電気株式会社 半導体装置およびその製造方法
US6001730A (en) 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP3371775B2 (ja) 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6096652A (en) * 1997-11-03 2000-08-01 Motorola, Inc. Method of chemical mechanical planarization using copper coordinating ligands
JP3094392B2 (ja) 1997-12-10 2000-10-03 株式会社荏原電産 エッチング液
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
KR100491465B1 (ko) * 1998-08-31 2005-05-25 히다치 가세고교 가부시끼가이샤 금속용 연마액 및 연마 방법
US6274063B1 (en) 1998-11-06 2001-08-14 Hmt Technology Corporation Metal polishing composition
US6290736B1 (en) 1999-02-09 2001-09-18 Sharp Laboratories Of America, Inc. Chemically active slurry for the polishing of noble metals and method for same
JP3912927B2 (ja) * 1999-05-10 2007-05-09 花王株式会社 研磨液組成物
DE19927286B4 (de) 1999-06-15 2011-07-28 Qimonda AG, 81739 Verwendung einer Schleiflösung zum chemisch-mechanischen Polieren einer Edelmetall-Oberfläche
JP4614497B2 (ja) * 1999-07-13 2011-01-19 花王株式会社 研磨液組成物
JP2001144047A (ja) * 1999-11-12 2001-05-25 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
KR100844032B1 (ko) 1999-12-14 2008-07-04 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 귀금속 연마용 조성물
JP2001187877A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー

Also Published As

Publication number Publication date
ATE292167T1 (de) 2005-04-15
CA2378790A1 (en) 2001-02-22
JP2009170935A (ja) 2009-07-30
DE60034474T2 (de) 2008-01-10
JP4851174B2 (ja) 2012-01-11
CN1370207A (zh) 2002-09-18
DE60019142T2 (de) 2006-02-09
JP4391715B2 (ja) 2009-12-24
HK1046423A1 (zh) 2003-01-10
EP1218465A1 (de) 2002-07-03
JP2003507896A (ja) 2003-02-25
JP5384994B2 (ja) 2014-01-08
CN100368496C (zh) 2008-02-13
KR20020026953A (ko) 2002-04-12
IL147236A0 (en) 2002-08-14
IL147234A0 (en) 2002-08-14
KR20020020796A (ko) 2002-03-15
CN1370209A (zh) 2002-09-18
WO2001012740A1 (en) 2001-02-22
TW570965B (en) 2004-01-11
WO2001012741A1 (en) 2001-02-22
CA2378793A1 (en) 2001-02-22
EP1218465B1 (de) 2005-03-30
DE60034474D1 (de) 2007-05-31
CN100335580C (zh) 2007-09-05
US6852632B2 (en) 2005-02-08
JP2006245598A (ja) 2006-09-14
HK1046422A1 (zh) 2003-01-10
AU6537000A (en) 2001-03-13
KR100590664B1 (ko) 2006-06-19
JP2006121101A (ja) 2006-05-11
JP4188598B2 (ja) 2008-11-26
EP1226220B1 (de) 2007-04-18
MY129591A (en) 2007-04-30
EP1811005B1 (de) 2016-08-03
JP2003507895A (ja) 2003-02-25
AU6632100A (en) 2001-03-13
EP1811005A1 (de) 2007-07-25
US20030170991A1 (en) 2003-09-11
JP4723409B2 (ja) 2011-07-13
MY139997A (en) 2009-11-30
KR100590666B1 (ko) 2006-06-19
TW500784B (en) 2002-09-01
DE60019142D1 (de) 2005-05-04
EP1226220A1 (de) 2002-07-31

Similar Documents

Publication Publication Date Title
ATE360051T1 (de) Poliersystem und verfahren zu seiner verwendung
ATE247700T1 (de) Suspension zum chemisch-mechanischen polieren mit fluorierten additiven und verfahren zur benutzung dieser suspension
DE60307111D1 (de) Verfahren zum chemisch mechanisch polieren von materialien mit einer niedrigen dielektrizitätskonstanten
DE60020389D1 (de) Verfahren und vorrichtung zum planarisieren von mikroelektronischem substratenaufbau
TW200513521A (en) Method and composition for polishing a substrate
WO2000028586A3 (en) Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad
DE60321154D1 (de) Beschichteter schleifgegenstand, verfahren zur herstellung desselben und verfahren zum schleifen eines werkstücks
DE60314274D1 (de) Cmp verfahren unter verwendung von amphiphilen nichtionischen tensiden
ATE320881T1 (de) Schleifmittel mit einem fenstersystem zum polieren von wafern und verfahren hierfür
DE69817143D1 (de) Schleifmittel und verfahren zum polieren von halbleitersubstraten
JP2018500456A5 (de)
DE60008025D1 (de) Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen
ATE200104T1 (de) Verfahren zur korrosionsinhibierung in wässrigen systemen
HUP0100097A2 (hu) Eljárás porbevonat készítésére
MY134021A (en) Alkali metal-containing polishing system and method
ATE397055T1 (de) Verfahren und gerät zum reinigen von halbleitersubstraten nach der politur deskupferfilms
WO2004072199A3 (en) Mixed-abrasive polishing composition and method for using the same
ATE98703T1 (de) Entfernung von rost und mittel hierfuer.
DE60107720D1 (de) Flüssigkristall-transferkörper und verfahren zum transferieren des flüssigkristall-transfer-körpers
DE60023549D1 (de) Verfahren zum polieren oder planarisieren eines substrats
EP0454362A3 (en) Backing pad, method for precision surface machining thereof, and method for polishing semiconductor wafer by use of the backing pad
DE69833847D1 (de) Verfahren zum Entfernen von Teilchen und Flüssigkeit von der Oberfläche eines Substrats
WO2002020214A3 (en) Method for polishing a memory or rigid disk with a polishing composition containing an oxidized halide and an acid
EP0858102A3 (de) Verfahren zur Behandlung einer Substratoberfläche und Behandlungsmittel hierfür
ATE131151T1 (de) Zusammensetzung und verfahren zur korrosionsinhibierung und/oder haftvermittlung von metalloberflächen.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties