KR100471527B1 - 연마체, 연마장치, 연마방법 및 반도체 소자의 제조방법 - Google Patents
연마체, 연마장치, 연마방법 및 반도체 소자의 제조방법 Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
실시예 1 | 실시예 2 | 실시예 3 | 실시예 4 | 실시예 5 | 비교예 1 | 비교예 2 | |
홈 폭(W)(mm) | 0.35 | 0.25 | 0.25 | 0.25 | 0.25 | 0.05 | 0.45 |
홈 사이의 볼록부분의 폭(mm) | 0.15 | 0.25 | 0.25 | 0.25 | 0.25 | 0.45 | 0.05 |
홈 깊이(mm) | 0.30 | 0.25 | 0.25 | 0.25 | 0.25 | 2.0 | 2.0 |
홈의 단면형상 | V 자형 | V 자형 | V 자형 | V 자형 | U 자형 | 직사각형 | 직사각형 |
연마체표면에 대한 홈형상 | 나선형상 | 나산형상 | 나선형상 | 나선형상 | 그물코형상 | 나선형상 | 나선형상 |
두께(D)(mm) | 4.0 | 4.0 | 2.0 | 2.0 | 4.0 | 4.0 | 4.0 |
체적비율(VL)(%) | 2.6 | 1.6 | 3.1 | 3.1 | 5.2 | 5.0 | 45.0 |
연마속도(nm/min) | 212 | 256 | 252 | 255 | 254 | 160 | 150 |
균일성(%) | 8.8 | 10.5 | 11.9 | 12.0 | 8.0 | 25.0 | 20.0 |
평탄성(nm) | 80 | 35 | 20 | 20 | 35 | 50 | 100 |
실시예 1 | 실시예 2 | 실시예 3 | 비교예 1 | 비교예 2 | |
균일성(%) | 7 | 6 | 6 | 10 | 6 |
평탄성(nm) | 80 | 80 | 100 | 100 | 200 |
Claims (46)
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- 연마체와 연마대상물의 사이에 연마제를 개재시킨 상태로, 상기 연마체와 상기 연마대상물을 상대이동시킴으로써, 상기 연마대상물을 연마하는 연마장치에 사용하는 연마체로서,연마제를 통해 직접 연마에 기여하는 부분으로서 표면에 요철구조를 갖는 부분이 주기적 또는 비주기적으로 형성되고, 상기 연마제를 통해 직접 연마에 기여하는 부분의 표면에 형성된 요철구조는 2종류 이상인 것을 특징으로 하는 연마체.
- 제 32 항에 있어서, 동일한 종류의 상기 요철구조가 형성되어 있는 영역내에서는 상기 요철구조의 오목부 및 상기 요철구조의 볼록부는 각각 2 개 이상 형성되어 있는 것을 특징으로 하는 연마체.
- 제 33 항에 있어서, 상기 요철구조가 제 1 요철구조 및 제 2 요철구조의 2 종류의 요철구조로 이루어지며, 상기 제 1 요철구조의 오목부 및 상기 제 2 요철구조의 오목부는 홈이며, 상기 제 1 요철구조의 볼록부의 폭은 상기 제 2 요철구조의 볼록부의 폭의 2 배 이상인 것을 특징으로 하는 연마체.
- 제 32 항에 있어서, 상기 연마체의 평면형상이 원이며, 또한 동일한 종류의 상기 요철구조가 형성되어 있는 영역은 동심원형상으로 배치되어 있는 것을 특징으로 하는 연마체.
- 제 32 항에 있어서, 동일한 종류의 상기 요철구조가 형성되어 있는 영역은 격자형상으로 배치되어 있는 것을 특징으로 하는 연마체.
- 제 32 항에 있어서, 상기 연마체의 표면에 상기 연마제를 공급 및 배출하는 홈이 추가로 형성되어 있는 것을 특징으로 하는 연마체.
- 제 32 항에 있어서, 비커즈경도(k) 가 2.5(Kgf/㎟) < k < 30(Kgf/㎟) 인 것을 특징으로 하는 연마체.
- 제 32 항에 있어서, 표면에 상기 요철구조가 형성되어 있는 제 1 층과, 제 1 층의 하부에 설치되며 제 1 층이 적층되어 있는 제 2 층으로 구성되고, 상기 제 2 층의 탄성률은 상기 제 1 층의 탄성률보다 큰 것을 특징으로 하는 연마체.
- 연마체와 연마대상물 사이에 연마제를 개재시킨 상태에서, 상기 연마체와 상기 연마대상물을 상대운동시킴으로써, 상기 연마대상물을 연마하는 연마장치에 있어서, 연마체로서 제 32 항 내지 제 39 항 중 어느 한 항에 기재된 연마체를 사용하고 있는 것을 특징으로 하는 연마장치.
- 제 40 항에 기재된 연마장치를 사용하여 웨이퍼를 연마하는 공정을 갖는 것을 특징으로 하는 반도체 소자의 제조방법.
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Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-1999-00088157 | 1999-03-30 | ||
JP8815799A JP2000286218A (ja) | 1999-03-30 | 1999-03-30 | 研磨部材、研磨装置及び研磨方法 |
JP9817999 | 1999-04-05 | ||
JPJP-P-1999-00098179 | 1999-04-05 | ||
JP25494199A JP2001079755A (ja) | 1999-09-08 | 1999-09-08 | 研磨体及び研磨方法 |
JPJP-P-1999-00254941 | 1999-09-08 | ||
JP2000025373A JP2001212752A (ja) | 2000-02-02 | 2000-02-02 | 研磨体、研磨装置、半導体デバイス製造方法、及び半導体デバイス |
JPJP-P-2000-00025373 | 2000-02-02 | ||
JPJP-P-2000-00025386 | 2000-02-02 | ||
JP2000025386A JP2000354952A (ja) | 1999-04-05 | 2000-02-02 | 研磨部材、研磨方法、研磨装置、半導体デバイス製造方法、及び半導体デバイス |
Publications (2)
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KR20010102535A KR20010102535A (ko) | 2001-11-15 |
KR100471527B1 true KR100471527B1 (ko) | 2005-03-09 |
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Country Status (7)
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US (1) | US6749714B1 (ko) |
EP (1) | EP1211023B1 (ko) |
KR (1) | KR100471527B1 (ko) |
CN (2) | CN1345264A (ko) |
DE (1) | DE60039054D1 (ko) |
TW (2) | TW530348B (ko) |
WO (1) | WO2000059680A1 (ko) |
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Also Published As
Publication number | Publication date |
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CN1551303A (zh) | 2004-12-01 |
TW511174B (en) | 2002-11-21 |
US6749714B1 (en) | 2004-06-15 |
EP1211023B1 (en) | 2008-05-28 |
CN1345264A (zh) | 2002-04-17 |
DE60039054D1 (de) | 2008-07-10 |
CN1312742C (zh) | 2007-04-25 |
TW530348B (en) | 2003-05-01 |
EP1211023A4 (en) | 2005-11-30 |
WO2000059680A1 (fr) | 2000-10-12 |
KR20010102535A (ko) | 2001-11-15 |
EP1211023A1 (en) | 2002-06-05 |
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