JPWO2016116998A1 - 半導体装置及びその製造方法、電力変換装置、3相モータシステム、自動車、並びに鉄道車両 - Google Patents
半導体装置及びその製造方法、電力変換装置、3相モータシステム、自動車、並びに鉄道車両 Download PDFInfo
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Abstract
Description
本発明の実施の形態1による炭化珪素半導体装置の構造について図1および図2を用いて説明する。図1は複数のSiCパワーMISFETにより構成される炭化珪素半導体装置が搭載された半導体チップの要部上面図、図2はSiCパワーMISFETの要部鳥瞰図である。炭化珪素半導体装置を構成するのはSiCパワーMISFETである。
本発明の実施の形態1による炭化珪素半導体装置の製造方法について図3〜図17を用いて工程順に説明する。図3は実施の形態1における半導体装置の製造方法を説明する工程図である。図4〜図8、図9(b)〜図17は炭化珪素半導体装置のSiCパワーMISFET形成領域(素子形成領域)の一部を拡大して示す要部断面図である。図9(a)はSiCパワーMISFETにより構成される炭化珪素半導体装置が搭載された半導体チップの要部上面図である。
まず、図4に示すように、n+型の4H−SiC基板101を用意する。n+型のSiC基板101には、n型不純物が導入されている。このn型不純物は、例えば窒素(N)であり、このn型不純物の不純物濃度は、例えば1×1018〜1×1021cm−3の範囲である。また、n+型のSiC基板101はSi面とC面との両面を有するが、n+型のSiC基板101の表面はSi面またはC面のどちらでもよい。
次に、n+型のSiC基板101の裏面(第2主面)から所定の深さ(第7深さ)を有して、n+型のSiC基板101の裏面にn+型のドレイン領域103を形成する。n+型のドレイン領域103の不純物濃度は、例えば1×1019〜1×1021cm−3の範囲である。
次に、マスクM4を除去した後、図示は省略するが、SiCエピタキシャル基板104の表面上および裏面上に、例えばプラズマCVD法により炭素(C)膜を堆積する。炭素(C)膜の厚さは、例えば0.03μm程度である。この炭素(C)膜により、SiCエピタキシャル基板104の表面および裏面を被覆した後、SiCエピタキシャル基板104に1500℃以上の温度で2〜3分間程度の熱処理を施す。これにより、SiCエピタキシャル基板104にイオン注入した各不純物の活性化を行う。熱処理後は、炭素(C)膜を、例えば酸素プラズマ処理により除去する。
次に、図9(a)〜(c)に示すように、マスクM5を例えば、レジスト膜で形成する。図9(a)は要部上面図、図9(b)は図9(a)の線分AA’の要部断面図、図9(c)は図9(a)の線分BB’の要部断面図である。マスクM5の厚さは、例えば0.5〜3μm程度である。マスクM5には、後の工程においてトレンチ109が形成される領域に開口部分が設けられている。
次に、図10に示すように、マスクM5を除去した後、エピタキシャル層102の表面およびトレンチ109表面にゲート絶縁膜110を形成する。ゲート絶縁膜110は、例えば熱CVD法により形成されたSiO2膜からなる。ゲート絶縁膜110の厚さは、例えば0.005〜0.15μm程度である。
次に、図13に示すように、エピタキシャル層102の表面上に、ゲート電極111およびゲート絶縁膜110を覆うように、例えばプラズマCVD法により層間絶縁膜112を形成する。
本実施の形態2による炭化珪素半導体装置の製造方法について図19〜図29を用いて工程順に説明する。図19〜図29に、本実施の形態の炭化珪素半導体装置のSiCパワーMISFET形成領域(素子形成領域)の一部を拡大して示す。
次に、図示は省略するが、SiO2膜もしくはポリイミド膜をパッシベーション膜としてゲート配線用電極8およびソース配線用電極2を覆うように堆積させる。次に、図示は省略するが、パッシベーション膜を加工してパッシベーションを形成する。その際に、ソース電極開口部7とゲート電極開口部5を形成する。
Claims (15)
- 第1不純物濃度を有する第1導電型の半導体基板と、
前記半導体基板の裏面側に形成されている裏面電極と、
前記半導体基板上に形成されている前記第1不純物濃度よりも低い第2不純物濃度の前記第1導電型の第1領域と、
前記第1導電型の第2領域と、
前記第1領域と電気的に接続している前記第1導電型の第3領域と、
前記第2領域と前記第3領域とに接している、前記第1導電型とは反対の第2導電型の第4領域と、
前記第2領域と、前記第4領域と、前記第3領域と、に延在し、前記第4領域よりも浅く、底面が前記第4領域に接しているトレンチと、
前記トレンチの内壁に形成されている絶縁膜と、
前記絶縁膜上に形成されているゲート電極と、
前記第3半導体領域と前記ゲート電極の間に形成されている前記第2導電型の第5領域と、を有することを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記ゲート電極の端部は、前記第5領域の上方に形成されていることを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記第5領域は前記第4領域から延伸して形成されていることを特徴とする半導体装置。 - 請求項3に記載の半導体装置において、
前記第5領域の不純物濃度は、前記第4領域の不純物濃度よりも高いことを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体基板は炭化珪素を材質としていることを特徴とする半導体装置。 - 請求項1に記載の半導体装置をスイッチング素子として有する電力変換装置。
- 請求項6に記載の電力変換装置で直流電力を交流電力に変換し、3相モータを駆動する3相モータシステム。
- 請求項7に記載の3相モータシステムで車輪を駆動する自動車。
- 請求項7に記載の3相モータシステムで車輪を駆動する鉄道車両。
- 第1導電型の半導体基板と、
前記半導体基板の裏面側に形成されているドレイン電極と、
前記半導体基板上に形成されている前記第1導電型のドリフト層と、
前記第1導電型のソース領域と、
前記ドリフト層と電気的に接続している前記第1導電型の電流拡散層と、
前記ソース領域と前記電流拡散層とに接している、前記第1導電型とは反対の第2導電型のボディ層と、
前記ソース領域と、前記ボディ層と、前記電流拡散層と、に延在し、前記ボディ層よりも浅く、底面が前記ボディ層に接しているトレンチと、
前記トレンチの内壁に形成されているゲート絶縁膜と、
前記ゲート絶縁膜上に形成されているゲート電極と、
前記電流拡散層と前記ゲート電極の間に形成されているゲート絶縁膜保護層と、を有することを特徴とする半導体装置。 - 請求項10に記載の半導体装置において、
前記ゲート電極の端部は、前記ゲート絶縁膜保護層の上方に形成されていることを特徴とする半導体装置。 - 請求項11に記載の半導体装置において、
前記ゲート絶縁膜保護層は前記ボディ層から延伸して形成されていることを特徴とする半導体装置。 - 請求項12に記載の半導体装置において、
前記ゲート絶縁膜保護層の不純物濃度は、前記ボディ層の不純物濃度よりも高いことを特徴とする半導体装置。 - 請求項10に記載の半導体装置において、
前記半導体基板は炭化珪素を材質としていることを特徴とする半導体装置。 - 第1導電型のエピタキシャル層が形成されている前記第1導電型の炭化珪素半導体基板を準備し、
前記エピタキシャル層内に前記第1導電型とは反対の第2導電型の第1領域を形成し、
前記第1領域内に前記第1導電型の第2領域を形成し、
前記第2領域内に前記第2導電型の第3領域を形成し、
前記第1領域よりも浅く、前記第3領域よりも深いトレンチを形成し、
前記トレンチの内壁に絶縁膜を形成し、
前記絶縁膜上にゲート電極を形成することを特徴とする半導体装置の製造方法。
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