JPWO2013011602A1 - 表示装置、及び表示装置の製造方法 - Google Patents
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- 229910052802 copper Inorganic materials 0.000 claims abstract description 103
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 102
- 239000000758 substrate Substances 0.000 claims abstract description 67
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- 229910052581 Si3N4 Inorganic materials 0.000 description 10
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000007864 aqueous solution Substances 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
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- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010030 laminating Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 4
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Substances OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
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- 239000012528 membrane Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
以下、本発明の一実施の形態による表示装置並びにその表示装置に用いる薄膜トランジスタ及びその製造方法について図面を参照しながら説明する。
30,30a,30b 薄膜トランジスタ
31 ゲート電極
32 ゲート絶縁膜
33 チャネル層
34,34a,34b コンタクト層
35S ソース電極
35D ドレイン電極
60,61,62 実装端子部
70 銅層
71 金属酸化物層
72 レジストマスク
73 保護膜
以下、本発明の一実施の形態による表示装置並びにその表示装置に用いる薄膜トランジスタ及びその製造方法について図面を参照しながら説明する。
30,30a,30b 薄膜トランジスタ
31 ゲート電極
32 ゲート絶縁膜
33 チャネル層
34,34a,34b コンタクト層
35S ソース電極
35D ドレイン電極
60,61,62 実装端子部
70 銅層
71 金属酸化物層
72 レジストマスク
73 保護膜
Claims (2)
- 表示素子と、前記表示素子の発光を制御する薄膜トランジスタと、前記薄膜トランジスタに接続される信号線とを備えた表示装置であって、
前記薄膜トランジスタは、
絶縁性の基板上に形成されたゲート電極と、
前記ゲート電極を覆うように前記基板上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたチャネル層と、
前記チャネル層に接続されるソース電極及びドレイン電極と
を備え、
かつ前記信号線の実装端子部は、銅層上に金属酸化物層を積層した構成とするとともに、前記実装端子部の断面を台形状とし、かつ前記実装端子部の側面と上面の周辺部とを保護膜で覆った構成を有する表示装置。 - 表示素子と、
前記表示素子の発光を制御する薄膜トランジスタと、
前記薄膜トランジスタに接続される信号線と
を備え、
前記薄膜トランジスタは、
絶縁性の基板上に形成されたゲート電極と、
前記ゲート電極を覆うように前記基板上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたチャネル層と、
前記チャネル層に接続されるソース電極及びドレイン電極と
を備えた表示装置の製造方法であって、
前記信号線の実装端子部は、
銅層上に金属酸化物層を積層した膜を形成した後、
前記金属酸化物層上にレジストマスクを形成し、
その後、まず前記レジストマスクを用いて上層の前記金属酸化物層をエッチングした後、
前記レジストマスクを用いて下層の前記銅層をエッチングし、
その後、再度前記上層の前記金属酸化物層をエッチングして、前記実装端子部の断面を台形状に加工し、
その後、前記実装端子部の側面と上面の周辺部を保護膜で覆う
表示装置の製造方法。
Priority Applications (1)
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JP2012547365A JP5609989B2 (ja) | 2011-07-19 | 2012-03-08 | 表示装置、及び表示装置の製造方法 |
Applications Claiming Priority (4)
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JP2011157440 | 2011-07-19 | ||
JP2011157440 | 2011-07-19 | ||
JP2012547365A JP5609989B2 (ja) | 2011-07-19 | 2012-03-08 | 表示装置、及び表示装置の製造方法 |
PCT/JP2012/001591 WO2013011602A1 (ja) | 2011-07-19 | 2012-03-08 | 表示装置、及び表示装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP5609989B2 JP5609989B2 (ja) | 2014-10-22 |
JPWO2013011602A1 true JPWO2013011602A1 (ja) | 2015-02-23 |
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JP (1) | JP5609989B2 (ja) |
KR (1) | KR101407814B1 (ja) |
CN (1) | CN103003861B (ja) |
WO (1) | WO2013011602A1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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KR102114315B1 (ko) * | 2013-08-21 | 2020-05-25 | 삼성디스플레이 주식회사 | 박막 트랜지스터 어레이 기판, 이를 포함하는 표시 장치, 및 박막 트랜지스터 어레이 기판의 제조 방법 |
CN104049393A (zh) * | 2014-06-12 | 2014-09-17 | 深圳市华星光电技术有限公司 | 一种覆晶薄膜基板及其制作方法和显示面板 |
CN105161502B (zh) * | 2015-08-24 | 2018-09-11 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法、显示装置 |
CN109273483B (zh) * | 2017-07-17 | 2021-04-02 | 京东方科技集团股份有限公司 | 显示基板及其制备方法和显示装置 |
KR20210018591A (ko) * | 2019-08-06 | 2021-02-18 | 삼성디스플레이 주식회사 | 표시 장치 |
CN110854304B (zh) * | 2019-11-20 | 2021-03-26 | 云谷(固安)科技有限公司 | 显示面板的制备方法 |
CN111106131B (zh) * | 2019-12-18 | 2022-09-30 | 京东方科技集团股份有限公司 | 一种阵列基板 |
KR20210101353A (ko) | 2020-02-07 | 2021-08-19 | 삼성디스플레이 주식회사 | 도전 패턴의 제조 방법, 표시 장치 및 이의 제조 방법 |
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JP3765203B2 (ja) * | 1999-07-29 | 2006-04-12 | 株式会社日立製作所 | 液晶表示装置 |
JP4342711B2 (ja) * | 2000-09-20 | 2009-10-14 | 株式会社日立製作所 | 液晶表示装置の製造方法 |
JP3419450B2 (ja) * | 2001-05-22 | 2003-06-23 | 富士ゼロックス株式会社 | 画素データ処理装置および方法 |
JP2004302466A (ja) * | 2003-03-29 | 2004-10-28 | Lg Philips Lcd Co Ltd | 水平電界印加型液晶表示装置及びその製造方法 |
KR100603836B1 (ko) * | 2004-11-30 | 2006-07-24 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
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- 2012-03-08 JP JP2012547365A patent/JP5609989B2/ja active Active
- 2012-03-08 WO PCT/JP2012/001591 patent/WO2013011602A1/ja active Application Filing
- 2012-03-08 KR KR1020127032053A patent/KR101407814B1/ko active IP Right Grant
- 2012-03-08 CN CN201280001673.8A patent/CN103003861B/zh active Active
Also Published As
Publication number | Publication date |
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CN103003861A (zh) | 2013-03-27 |
KR20130029084A (ko) | 2013-03-21 |
CN103003861B (zh) | 2015-07-01 |
WO2013011602A1 (ja) | 2013-01-24 |
KR101407814B1 (ko) | 2014-06-17 |
JP5609989B2 (ja) | 2014-10-22 |
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